JPH033379B2 - - Google Patents

Info

Publication number
JPH033379B2
JPH033379B2 JP55172677A JP17267780A JPH033379B2 JP H033379 B2 JPH033379 B2 JP H033379B2 JP 55172677 A JP55172677 A JP 55172677A JP 17267780 A JP17267780 A JP 17267780A JP H033379 B2 JPH033379 B2 JP H033379B2
Authority
JP
Japan
Prior art keywords
resist
photoconductive
charged beam
polyvinylcarbazole
molecular weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55172677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5796333A (en
Inventor
Nobuyuki Yasutake
Yasutaka Ban
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17267780A priority Critical patent/JPS5796333A/ja
Publication of JPS5796333A publication Critical patent/JPS5796333A/ja
Publication of JPH033379B2 publication Critical patent/JPH033379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Drying Of Semiconductors (AREA)
JP17267780A 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam Granted JPS5796333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17267780A JPS5796333A (en) 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17267780A JPS5796333A (en) 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam

Publications (2)

Publication Number Publication Date
JPS5796333A JPS5796333A (en) 1982-06-15
JPH033379B2 true JPH033379B2 (enrdf_load_stackoverflow) 1991-01-18

Family

ID=15946314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17267780A Granted JPS5796333A (en) 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam

Country Status (1)

Country Link
JP (1) JPS5796333A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143828A (en) * 1981-03-02 1982-09-06 Fujitsu Ltd Method of pattern formation
JPH0715868B2 (ja) * 1983-09-30 1995-02-22 株式会社東芝 パターン形成方法
JPS6320830A (ja) * 1986-07-14 1988-01-28 Toshiba Corp 微細加工方法
JP2502564B2 (ja) * 1987-02-20 1996-05-29 松下電子工業株式会社 レジストパタ−ンの形成方法
JP2548308B2 (ja) * 1988-06-29 1996-10-30 松下電器産業株式会社 パターン形成方法
JP2551632B2 (ja) * 1988-07-11 1996-11-06 株式会社日立製作所 パターン形成方法および半導体装置製造方法
JP2583986B2 (ja) * 1988-07-19 1997-02-19 松下電子工業株式会社 レジストパターンの形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852771A (en) * 1973-02-12 1974-12-03 Rca Corp Electron beam recording process
JPS6025024B2 (ja) * 1977-09-20 1985-06-15 三菱電機株式会社 フオトマスク用原板

Also Published As

Publication number Publication date
JPS5796333A (en) 1982-06-15

Similar Documents

Publication Publication Date Title
US5169494A (en) Fine pattern forming method
US3893127A (en) Electron beam recording media
US4099062A (en) Electron beam lithography process
US3934057A (en) High sensitivity positive resist layers and mask formation process
GB1514109A (en) Method of making resist mask on a substrate
US4035522A (en) X-ray lithography mask
JPH033379B2 (enrdf_load_stackoverflow)
ATE49678T1 (de) Photoresistbelichtungsverfahren und geraet unter verwendung eines elektronenstrahls, dessen energie und ladung gesteuert werden.
KR940004381A (ko) 종횡비가 높은, 포지티브 타입의 두꺼운 유연성 포토 레지스트 필름
US5091285A (en) Method of forming pattern by using an electroconductive composition
EP0390038B1 (en) Fine Pattern forming method
US4263359A (en) Charge receptor film for charge transfer imaging
EP0057268A3 (en) Method of fabricating x-ray lithographic masks
US4474869A (en) Polyvinylpyridine radiation resists
Conley et al. Negative tone aqueous developable resist for photon, electron, and x-ray lithography
US4647523A (en) Production of a resist image
Broyde Device photolithography: Electron-sensitive materials
JPS59116745A (ja) パタ−ン形成方法
JPS6320375B2 (enrdf_load_stackoverflow)
GB1509314A (en) Radiation-sensitive resist-forming composition
JP2548308B2 (ja) パターン形成方法
JPS55165631A (en) Manufacture of semiconductor device
JPS55117142A (en) Image duplicating material and image duplicating method
JPH08153659A (ja) レジストパターンの形成方法
JPH0468769B2 (enrdf_load_stackoverflow)