JPH0331787B2 - - Google Patents
Info
- Publication number
- JPH0331787B2 JPH0331787B2 JP518785A JP518785A JPH0331787B2 JP H0331787 B2 JPH0331787 B2 JP H0331787B2 JP 518785 A JP518785 A JP 518785A JP 518785 A JP518785 A JP 518785A JP H0331787 B2 JPH0331787 B2 JP H0331787B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- vapor deposition
- powder
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 18
- 238000007740 vapor deposition Methods 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052901 montmorillonite Inorganic materials 0.000 claims description 7
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021536 Zeolite Inorganic materials 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 239000010457 zeolite Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 229910000389 calcium phosphate Inorganic materials 0.000 description 1
- 235000011010 calcium phosphates Nutrition 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP518785A JPS61163261A (ja) | 1985-01-16 | 1985-01-16 | 真空蒸着法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP518785A JPS61163261A (ja) | 1985-01-16 | 1985-01-16 | 真空蒸着法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61163261A JPS61163261A (ja) | 1986-07-23 |
JPH0331787B2 true JPH0331787B2 (enrdf_load_stackoverflow) | 1991-05-08 |
Family
ID=11604220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP518785A Granted JPS61163261A (ja) | 1985-01-16 | 1985-01-16 | 真空蒸着法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61163261A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4548429B2 (ja) | 2007-02-19 | 2010-09-22 | コニカミノルタビジネステクノロジーズ株式会社 | 支持部材を有するローラ及び該ローラを備えた画像形成装置 |
CN102978566B (zh) * | 2012-12-14 | 2015-02-25 | 西北有色金属研究院 | 一种制备真空物理气相沉积镀层图案的方法 |
-
1985
- 1985-01-16 JP JP518785A patent/JPS61163261A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61163261A (ja) | 1986-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS60119788A (ja) | 誘電グリ−ン・シ−トに対して金属組成のパタ−ンを焼結剤と共にコ−テイングする方法 | |
JPH0583080B2 (enrdf_load_stackoverflow) | ||
JPH0387358A (ja) | 成膜装置と成膜方法およびスパッタ装置 | |
JPS6354221B2 (enrdf_load_stackoverflow) | ||
US4582722A (en) | Diffusion isolation layer for maskless cladding process | |
JPH0331787B2 (enrdf_load_stackoverflow) | ||
JP3025560B2 (ja) | セラミックス配線基板及びその製造方法 | |
JPS63124555A (ja) | 半導体装置用基板 | |
JPS61208842A (ja) | 半導体ウエハ支持基板 | |
JPS63288091A (ja) | 回路基板 | |
JPS61245555A (ja) | 半導体用端子接続構体 | |
JPH03101291A (ja) | 導電パターンの製造方法 | |
JP2002173361A (ja) | セラミック基板、薄膜回路基板およびセラミック基板の製造方法 | |
JPH0563108B2 (enrdf_load_stackoverflow) | ||
JP2003163260A (ja) | 静電吸着装置およびそれを用いた移動テーブル試料台 | |
JP3687250B2 (ja) | 金属−セラミックス複合部材の保持治具の製造方法及び保持治具用塗布剤 | |
JPH01316456A (ja) | スパッタリング装置 | |
JPS62122152A (ja) | 半導体装置用基板の製造方法 | |
JPH01272783A (ja) | ホウロウ基板およびその製造方法 | |
JPH0812472A (ja) | 表面処理された窒化アルミニウム基材 | |
JPS63296293A (ja) | 厚膜回路形成方法 | |
JPH0232590A (ja) | 銅・有機絶縁膜配線板の製造方法 | |
JPS63248786A (ja) | 非酸化物系セラミツクスの表面改質方法及び表面改質物 | |
JPH07193348A (ja) | セラミック回路基板 | |
JPH04111410A (ja) | 回路基板および該回路基板を用いた微細回路用フォトレジスト膜形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |