JPH03293768A - Field-effect transistor - Google Patents

Abstract

PURPOSE:To make a large electric current flow even when a transistor itself is small-sized by a method wherein the structure of the transistor is formed to be three-dimensional, a substrate, an oxide film, a drain, a source and a gate are arranged in a cylindrical shape by using a ground as an axis and a channel is formed to be cylindrical. CONSTITUTION:The structure of a transistor is formed to be three-dimensional; a substrate 6', an insulating film 2', a gate 5', a source 4' and a drain 3' are arranged in a cylindrical shape by using a ground 1 ' as an axis; a channel is formed to be cylindrical. When a prescribed voltage is applied to the cylindrical gate 5', the cylindrical channel is induced at a part along the gate 5' of the substrate 6'. An electric current can be made to flow between the drain region 3' and the source region 4' through the cylindrical channel. Thereby, even when the transistor itself is small-sized, a large electric current can be made to flow.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a field effect transistor, and particularly to an electrode groove structure thereof.

[Conventional technology]

Generally, a field effect transistor has a two-dimensional structure, and a channel is formed in a planar shape.

FIG. 2 is a cross-sectional view showing the structure of a conventional field effect transistor having a two-dimensional structure and a planar channel.

In the figure, 1 is a ground, 2 is an insulating film, 3 is a drain region, 4 is a source region, 5 is a gate, and 6 is a substrate.

In the field effect transistor configured in this way,
When a positive voltage is applied to the gate 5, the gate 5 of the substrate 6
Dislocation occurs in the exposed portion, a channel is formed, and the drain region 3 and source region 4 are brought into conduction, allowing current to flow.

[Problem to be solved by the invention]

However, since conventional field effect transistors have a two-dimensional structure, the channel is flat, and in order to flow a large current between the drain region 3 and source region 4, the transistor itself must be made large. The problem was that it didn't.

The present invention was made to solve the above-mentioned problems, and its purpose is to obtain a field effect transistor that allows a large current to flow even if the size of the transistor itself is small.

[Means to solve the problem]

The field effect transistor according to the present invention has a three-dimensional transistor structure in which a substrate, an insulating film, a gate, a source, and a drain are arranged in a cylindrical shape with the ground as an axis, and a channel is formed in a cylindrical shape. .

[Effect]

In this invention, the channel induced by applying a predetermined voltage to the cylindrical gate becomes cylindrical.

〔Example〕

FIG. 1 is a diagram showing the configuration of a field-effect transistor showing an embodiment of the present invention.
b) is a sectional view taken along the ground 1' in the same figure. In the figure, 1' is a ground, 2'...1 insulating film, 3' is a drain region, 4' is a source region, 5' is a gate, and 6' is a substrate.

In the field effect transistor configured in this way,
When a predetermined voltage is applied to the cylindrical gate 5', a cylindrical channel is induced in the portion of the substrate 6' overflowing the gate 5'. Current can flow between the drain region 3' and the source region 4' through this cylindrical channel.

According to this structure, since the channel is formed in the shape of a diagonal, the length of the portion of the channel in contact with the drain region 3' and the source region 41 can be made long even if the size of the transistor itself is small. Therefore, a large current can flow between the drain region 3' and the source region 4'.

〔Effect of the invention〕

As explained above, according to the present invention, the structure of the field effect transistor is made three-dimensional, and the substrate, oxide film, drain/source, and gate are arranged in a cylindrical shape with the ground as the axis, and the channel is formed in a cylindrical shape. Therefore, even if the transistor itself is small, a large current can flow, which is an extremely excellent effect.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the structure of a field effect transistor according to the present invention, and FIG. 2 is a sectional view showing the structure of a conventional field effect transistor. 1', O...Ground, 2', +1-, Insulating film, 3', Drain region, 4'...- Source region, 5
′...Gate, 6′...Substrate.

Claims (1)

[Claims] A field effect transistor characterized in that a substrate, an oxide film, a drain, a source, and a gate are arranged in a cylindrical shape with the ground as an axis, and a channel is formed in a cylindrical shape.