JPS63252480A - Vertical mos field-effect transistor - Google Patents

Vertical mos field-effect transistor

Info

Publication number
JPS63252480A
JPS63252480A JP62089104A JP8910487A JPS63252480A JP S63252480 A JPS63252480 A JP S63252480A JP 62089104 A JP62089104 A JP 62089104A JP 8910487 A JP8910487 A JP 8910487A JP S63252480 A JPS63252480 A JP S63252480A
Authority
JP
Japan
Prior art keywords
regions
channel regions
shaped
formed
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62089104A
Inventor
Yoshiaki Hisamoto
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62089104A priority Critical patent/JPS63252480A/en
Publication of JPS63252480A publication Critical patent/JPS63252480A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Abstract

PURPOSE:To keep the extension of a depletion layer constant, and to increase breakdown strength by forming regions having the same conductivity type as channel regions into field concentration regions among the channel regions arranged to a matrix shape. CONSTITUTION:An n<+> drain region 2 is shaped onto one main surface of an n-type substrate 1, and matrix-shaped p channel regions 3 are formed to the other main surface. n source regions 4 are shaped into the channel regions 3, and oxide films 5 are formed so as to coat main surfaces among adjacent p channels 3 and one parts of the source regions. Gate electrodes 6 and insulating films are shaped onto the oxide films 5. p-type regions 10 are formed into field concentration regions at positions at equal distances from the channel regions 3. Accordingly, the extension of a depletion layer is kept approximately constant, thus increasing breakdown strength.
JP62089104A 1987-04-09 1987-04-09 Vertical mos field-effect transistor Pending JPS63252480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62089104A JPS63252480A (en) 1987-04-09 1987-04-09 Vertical mos field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62089104A JPS63252480A (en) 1987-04-09 1987-04-09 Vertical mos field-effect transistor

Publications (1)

Publication Number Publication Date
JPS63252480A true JPS63252480A (en) 1988-10-19

Family

ID=13961580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62089104A Pending JPS63252480A (en) 1987-04-09 1987-04-09 Vertical mos field-effect transistor

Country Status (1)

Country Link
JP (1) JPS63252480A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02292868A (en) * 1989-05-01 1990-12-04 Nippon Inter Electronics Corp Field-effect transistor
JPH03230574A (en) * 1990-02-06 1991-10-14 Matsushita Electron Corp Semiconductor device
US5136349A (en) * 1989-08-30 1992-08-04 Siliconix Incorporated Closed cell transistor with built-in voltage clamp
US5155574A (en) * 1990-03-20 1992-10-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5420450A (en) * 1992-09-10 1995-05-30 Kabushiki Kaisha Toshiba Semiconductor device having stable breakdown voltage in wiring area
JP2005136166A (en) * 2003-10-30 2005-05-26 Matsushita Electric Ind Co Ltd Vertical mosfet
JP2006019553A (en) * 2004-07-02 2006-01-19 Matsushita Electric Ind Co Ltd Vertical semiconductor device
US7833863B1 (en) 2003-12-02 2010-11-16 Vishay-Siliconix Method of manufacturing a closed cell trench MOSFET
CN102244100A (en) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 MOS (metal oxide semiconductor) power semiconductor device
US8183629B2 (en) 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607764A (en) * 1983-06-13 1985-01-16 Philips Nv Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607764A (en) * 1983-06-13 1985-01-16 Philips Nv Semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02292868A (en) * 1989-05-01 1990-12-04 Nippon Inter Electronics Corp Field-effect transistor
US5136349A (en) * 1989-08-30 1992-08-04 Siliconix Incorporated Closed cell transistor with built-in voltage clamp
JPH03230574A (en) * 1990-02-06 1991-10-14 Matsushita Electron Corp Semiconductor device
US5155574A (en) * 1990-03-20 1992-10-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5420450A (en) * 1992-09-10 1995-05-30 Kabushiki Kaisha Toshiba Semiconductor device having stable breakdown voltage in wiring area
JP2005136166A (en) * 2003-10-30 2005-05-26 Matsushita Electric Ind Co Ltd Vertical mosfet
US7833863B1 (en) 2003-12-02 2010-11-16 Vishay-Siliconix Method of manufacturing a closed cell trench MOSFET
US8183629B2 (en) 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
JP2006019553A (en) * 2004-07-02 2006-01-19 Matsushita Electric Ind Co Ltd Vertical semiconductor device
US8697571B2 (en) 2006-05-12 2014-04-15 Vishay-Siliconix Power MOSFET contact metallization
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US8883580B2 (en) 2007-04-19 2014-11-11 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US10032901B2 (en) 2009-10-30 2018-07-24 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
CN102244100A (en) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 MOS (metal oxide semiconductor) power semiconductor device

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