JPH0334466A - Vertical-type double diffused mosfet - Google Patents

Vertical-type double diffused mosfet

Info

Publication number
JPH0334466A
JPH0334466A JP16678689A JP16678689A JPH0334466A JP H0334466 A JPH0334466 A JP H0334466A JP 16678689 A JP16678689 A JP 16678689A JP 16678689 A JP16678689 A JP 16678689A JP H0334466 A JPH0334466 A JP H0334466A
Authority
JP
Japan
Prior art keywords
epitaxial layer
double diffused
type
diffusion
forming region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16678689A
Inventor
Tatsuro Sakai
Takatsugu Serada
Toshiaki Yanai
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP16678689A priority Critical patent/JPH0334466A/en
Publication of JPH0334466A publication Critical patent/JPH0334466A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Abstract

PURPOSE: To enable reduction of an ON-resistance without impairing an element breakdown strength by a method wherein the thickness of a second semiconductor layer of low resistivity on the side of a channel forming region is made larger than the depth of diffusion of the channel forming region.
CONSTITUTION: An N-type epitaxial layer 2 in a conventional vertical-type double diffused MOSFET is constructed of two layers, a first epitaxial layer 2-1 and a second epitaxial layer 2-2. The first epitaxial layer 2-1 has the same impurity concentration as the epitaxial layer 2 in the conventional verticaltype double diffused MOSFET, while the second epitaxial layer 2-2 has a higher impurity concentration than the first epitaxial layer 2-1 and has a low resistivity. Even when the thickness of the second epitaxial layer 2-2 is made larger than the depth of diffusion of a P-type channel forming region 5, an element breakdown strength can be kept equivalent to the one of the conventional vertical- type double diffusion MOSFET.
COPYRIGHT: (C)1991,JPO&Japio
JP16678689A 1989-06-30 1989-06-30 Vertical-type double diffused mosfet Pending JPH0334466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16678689A JPH0334466A (en) 1989-06-30 1989-06-30 Vertical-type double diffused mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16678689A JPH0334466A (en) 1989-06-30 1989-06-30 Vertical-type double diffused mosfet

Publications (1)

Publication Number Publication Date
JPH0334466A true JPH0334466A (en) 1991-02-14

Family

ID=15837649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16678689A Pending JPH0334466A (en) 1989-06-30 1989-06-30 Vertical-type double diffused mosfet

Country Status (1)

Country Link
JP (1) JPH0334466A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061974A3 (en) * 2002-12-20 2004-09-23 Cree Inc Silicon carbide power mos field effect transistors and manufacturing methods
US6979863B2 (en) 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7118970B2 (en) 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
JP2008211178A (en) * 2007-02-27 2008-09-11 Cree Inc Insulated gate bipolar transistor comprising current suppressing layer
US7482285B2 (en) 1999-06-09 2009-01-27 International Rectifier Corporation Dual epitaxial layer for high voltage vertical conduction power MOSFET devices
JP2009076930A (en) * 2008-11-13 2009-04-09 Mitsubishi Electric Corp Semiconductor device
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US7615801B2 (en) 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
WO2010021146A1 (en) * 2008-08-21 2010-02-25 パナソニック株式会社 Semiconductor device
JP2016058661A (en) * 2014-09-11 2016-04-21 国立研究開発法人産業技術総合研究所 Semiconductor device
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640652B2 (en) 2009-03-27 2017-05-02 Cree, Inc. Semiconductor devices including epitaxial layers and related methods
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities
US9865750B2 (en) 2011-09-11 2018-01-09 Cree, Inc. Schottky diode

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482285B2 (en) 1999-06-09 2009-01-27 International Rectifier Corporation Dual epitaxial layer for high voltage vertical conduction power MOSFET devices
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
EP2383787A1 (en) * 2002-12-20 2011-11-02 Cree, Inc. Silicon carbide power MOS field effect transistors
JP2006511961A (en) * 2002-12-20 2006-04-06 クリー インコーポレイテッドCree Inc. Vertical JFET Restricted Silicon Carbide Power Metal Oxide Semiconductor Field Effect Transistor and Method for Manufacturing Vertical JFET Restricted Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor
KR101020344B1 (en) * 2002-12-20 2011-03-08 크리 인코포레이티드 Silicon carbide power MOS field effect transistors and manufacturing methods
WO2004061974A3 (en) * 2002-12-20 2004-09-23 Cree Inc Silicon carbide power mos field effect transistors and manufacturing methods
US7074643B2 (en) 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7381992B2 (en) 2003-04-24 2008-06-03 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions
US6979863B2 (en) 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7705362B2 (en) 2004-06-22 2010-04-27 Cree, Inc. Silicon carbide devices with hybrid well regions
US7118970B2 (en) 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7615801B2 (en) 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US9142663B2 (en) 2005-05-24 2015-09-22 Cree, Inc. Silicon carbide devices having smooth channels
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8188483B2 (en) 2005-05-24 2012-05-29 Cree, Inc. Silicon carbide devices having smooth channels
US8859366B2 (en) 2005-05-24 2014-10-14 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US20100140628A1 (en) * 2007-02-27 2010-06-10 Qingchun Zhang Insulated gate bipolar transistors including current suppressing layers
JP2008211178A (en) * 2007-02-27 2008-09-11 Cree Inc Insulated gate bipolar transistor comprising current suppressing layer
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9064840B2 (en) 2007-02-27 2015-06-23 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
WO2010021146A1 (en) * 2008-08-21 2010-02-25 パナソニック株式会社 Semiconductor device
US8530943B2 (en) 2008-08-21 2013-09-10 Panasonic Corporation Semiconductor device
JP2009076930A (en) * 2008-11-13 2009-04-09 Mitsubishi Electric Corp Semiconductor device
US9640652B2 (en) 2009-03-27 2017-05-02 Cree, Inc. Semiconductor devices including epitaxial layers and related methods
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities
US10141302B2 (en) 2011-09-11 2018-11-27 Cree, Inc. High current, low switching loss SiC power module
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9865750B2 (en) 2011-09-11 2018-01-09 Cree, Inc. Schottky diode
US10153364B2 (en) 2011-09-11 2018-12-11 Cree, Inc. Power module having a switch module for supporting high current densities
JP2016058661A (en) * 2014-09-11 2016-04-21 国立研究開発法人産業技術総合研究所 Semiconductor device

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