JPH0328821B2 - - Google Patents

Info

Publication number
JPH0328821B2
JPH0328821B2 JP56169145A JP16914581A JPH0328821B2 JP H0328821 B2 JPH0328821 B2 JP H0328821B2 JP 56169145 A JP56169145 A JP 56169145A JP 16914581 A JP16914581 A JP 16914581A JP H0328821 B2 JPH0328821 B2 JP H0328821B2
Authority
JP
Japan
Prior art keywords
layer
buffer layer
compound semiconductor
substrate
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56169145A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5870573A (ja
Inventor
Hiroshi Terao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56169145A priority Critical patent/JPS5870573A/ja
Publication of JPS5870573A publication Critical patent/JPS5870573A/ja
Publication of JPH0328821B2 publication Critical patent/JPH0328821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56169145A 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ Granted JPS5870573A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56169145A JPS5870573A (ja) 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56169145A JPS5870573A (ja) 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5870573A JPS5870573A (ja) 1983-04-27
JPH0328821B2 true JPH0328821B2 (cs) 1991-04-22

Family

ID=15881115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169145A Granted JPS5870573A (ja) 1981-10-22 1981-10-22 化合物半導体電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5870573A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012004972A1 (ja) * 2010-07-05 2012-01-12 パナソニック株式会社 プログラム生成装置、プログラム生産方法及びプログラム

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558337A (en) * 1984-05-30 1985-12-10 Texas Instruments Inc. Multiple high electron mobility transistor structures without inverted heterojunctions
JP2647824B2 (ja) * 1984-08-10 1997-08-27 三洋電機株式会社 半導体積層構造
JPH0799754B2 (ja) * 1985-11-12 1995-10-25 日本電信電話株式会社 電界効果トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180186A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor device and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012004972A1 (ja) * 2010-07-05 2012-01-12 パナソニック株式会社 プログラム生成装置、プログラム生産方法及びプログラム

Also Published As

Publication number Publication date
JPS5870573A (ja) 1983-04-27

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