JPH03283095A - Storage device - Google Patents
Storage deviceInfo
- Publication number
- JPH03283095A JPH03283095A JP2082774A JP8277490A JPH03283095A JP H03283095 A JPH03283095 A JP H03283095A JP 2082774 A JP2082774 A JP 2082774A JP 8277490 A JP8277490 A JP 8277490A JP H03283095 A JPH03283095 A JP H03283095A
- Authority
- JP
- Japan
- Prior art keywords
- write
- memory
- signals
- signal
- decoder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 claims abstract description 20
- 239000002131 composite material Substances 0.000 abstract description 5
- 230000007257 malfunction Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Read Only Memory (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、記憶装置に関し、特に電気的に書換可能な、
不揮発性メモリに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a storage device, and particularly to an electrically rewritable storage device.
It is related to non-volatile memory.
従来の記憶装置では、メモリのデータを保護する為の書
込禁止の方法として以下の様な例があるがともに全メモ
リ領域を一括して制御している。In conventional storage devices, there are the following examples of write-inhibiting methods for protecting data in memory, and in both cases, all memory areas are collectively controlled.
(1)外部端子として書込許諾用端子を設け、この切替
により、書込の許諾、禁止を設定する。(1) A write permission terminal is provided as an external terminal, and writing permission or prohibition is set by switching this terminal.
(it) コマンドとして、書込の許諾、禁止の命令
をもち、プログラム上で、設定を行う。(it) It has an instruction to permit or prohibit writing as a command, and is set on the program.
この従来の記憶装置では、書込の可否を全アドレス−括
して制御している為、ノイズ等による誤動作が発生した
場合には、全アドレスに誤書込の危険がある。これに対
し、例えば、電気的書換可能な不揮発生メモリでは、メ
モリ内にシステムの一部を記憶させる場合が多(、誤書
込は致命的な問題となり、これらのデータを常時、書込
を行うデータと分けて扱う必要性は高い。In this conventional storage device, writing permission is controlled collectively for all addresses, so if a malfunction occurs due to noise or the like, there is a risk of erroneous writing to all addresses. On the other hand, for example, in electrically rewritable non-volatile memory, part of the system is often stored in the memory (incorrect writing can be a fatal problem, so it is necessary to constantly write this data. There is a strong need to handle this separately from the data that will be processed.
本発明の記憶装置では、メモリ領域を複数に分割し、そ
の毎々に、書込許諾用の外部制御端子を割り当てている
。In the storage device of the present invention, the memory area is divided into a plurality of areas, and an external control terminal for write permission is assigned to each area.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の回路図である。アドレス信
号Xo、X1.Y0.Y1はXデコーダ1゜Yデコーダ
2によりデコードされ、Xワード線Xa〜Xd、Yワー
ド線Ya〜Ydから各々1本が選択され、任意のメモリ
が選びだされる。ここで、外部端子から印加される書込
許諾信号WEWE2とアドレス信号の1つ、Xlの正2
反転信号とで複合ゲート6を組む。この複合ゲート6の
出力は、「X1=“L″かつWE2=“H」と「X1=
“L″かつWE1=“H”」の2つの組合せの時のみ“
L”となる。この出力を”H”時を書込禁止信号として
用いることにより、X + =“H”の時にはWE2が
、X1=“L”の時にはWE、がそれぞれ書込許諾の制
御信号として働くことになる。FIG. 1 is a circuit diagram of an embodiment of the present invention. Address signals Xo, X1. Y0. Y1 is decoded by an X decoder 1 and a Y decoder 2, one of each of the X word lines Xa to Xd and one of the Y word lines Ya to Yd is selected, and an arbitrary memory is selected. Here, the write permission signal WEWE2 applied from the external terminal and one of the address signals, the positive 2 of Xl.
A composite gate 6 is constructed with the inverted signal. The output of this composite gate 6 is "X1="L" and WE2="H" and "X1="
Only when the two combinations of “L” and WE1="H"
By using this output as a write prohibition signal when it is “H”, WE2 becomes the write permission control signal when X + = “H”, and WE when X1 = “L”. You will work as a.
ここで仮に、X + =“H”時に選び出されるXワー
ド線がXa、Xbでこのワード線により選択可能なメモ
リ領域がメモリaであったとすると、WE2=“L”と
することでメモリaへの書込は一切禁止されることにな
る。同様にWE、=“L″とすることでメモリbへの書
込は一切禁止される。Here, if the X word lines selected when X + = "H" are Xa and Xb, and the memory area selectable by these word lines is memory a, by setting WE2 = "L", memory a Any writing to is prohibited. Similarly, by setting WE=“L”, writing to memory b is prohibited at all.
また第2図は、メモリ領域を3分割した場合の例である
。2本のアドレス信号X 1. X 2と3本の書込許
諾信号との組合せでメモリ領域の3分割制御を実現して
いる。この場合には、書込許諾信号の組合せにより、書
込禁止範囲をO/4,1/4゜2/4,3/4,4/4
と設定することが可能で、この様に書込許諾信号を増や
すことで書込禁止領域を自由に設定することが可能とな
る。尚、第2図ではXデコーダ2は省略している。Further, FIG. 2 is an example in which the memory area is divided into three parts. Two address signals X 1. The combination of X2 and three write permission signals realizes three-division control of the memory area. In this case, depending on the combination of write permission signals, the write prohibited range is set to O/4, 1/4°, 2/4, 3/4, 4/4.
By increasing the number of write permission signals in this way, it becomes possible to freely set a write-protected area. Note that the X decoder 2 is omitted in FIG.
以上説明したように本発明は、メモリを分割しその毎々
に書込許諾信号を割り当てることにより、メモリを部分
的に書込禁止とし、ノイズ等による誤動作が発生した場
合でも、特定領域だけには誤書込が起こらない様にでき
る効果がある。As explained above, the present invention divides the memory and assigns a write permission signal to each division, thereby making the memory partially write-prohibited, and even if a malfunction occurs due to noise, etc. This has the effect of preventing writing errors from occurring.
第1図は本発明の一実施例の回路図、第2図は本発明の
第2の実施例の回路図である。
1・・・・・・Xデコーダ、2・・・・・・Xデコーダ
、3゜4.8,9.10・・・・・・分割されたメモリ
領域、5−・・・インバター 6・・・・・・複合ゲー
ト、7・・・・・・書込制御回路、xO,x、、x2.
yo、yl・・・・・・アドレス信号、Xa、Xb・・
・Xg、Xh・・・・・・Xワード線、Ya、Yb、Y
c、Yd・・・・・・Xワード線、WEW E 2 、
W E s・・・・・・書込制御回路。FIG. 1 is a circuit diagram of one embodiment of the invention, and FIG. 2 is a circuit diagram of a second embodiment of the invention. 1...X decoder, 2...X decoder, 3゜4.8, 9.10...divided memory area, 5--inverter 6. . . . Composite gate, 7 . . . Write control circuit, xO, x, , x2.
yo, yl...address signal, Xa, Xb...
・Xg, Xh...X word line, Ya, Yb, Y
c, Yd...X word line, WEW E 2,
W E s...Write control circuit.
Claims (1)
部端子からの制御信号を割り当てていることを特徴とす
る記憶装置。A storage device characterized in that a memory area is divided into a plurality of areas, and a control signal from an external terminal for permission to write is assigned to each area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2082774A JPH03283095A (en) | 1990-03-29 | 1990-03-29 | Storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2082774A JPH03283095A (en) | 1990-03-29 | 1990-03-29 | Storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03283095A true JPH03283095A (en) | 1991-12-13 |
Family
ID=13783778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2082774A Pending JPH03283095A (en) | 1990-03-29 | 1990-03-29 | Storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03283095A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62165253A (en) * | 1986-01-17 | 1987-07-21 | Hitachi Micro Comput Eng Ltd | Lsi incorporated non-volatile memory |
JPS63263697A (en) * | 1987-04-21 | 1988-10-31 | Nec Corp | Electrically erasable prom |
JPS63303447A (en) * | 1987-06-03 | 1988-12-12 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH022435A (en) * | 1988-06-15 | 1990-01-08 | Seiko Instr Inc | Semiconductor non-volatile memory device |
-
1990
- 1990-03-29 JP JP2082774A patent/JPH03283095A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62165253A (en) * | 1986-01-17 | 1987-07-21 | Hitachi Micro Comput Eng Ltd | Lsi incorporated non-volatile memory |
JPS63263697A (en) * | 1987-04-21 | 1988-10-31 | Nec Corp | Electrically erasable prom |
JPS63303447A (en) * | 1987-06-03 | 1988-12-12 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH022435A (en) * | 1988-06-15 | 1990-01-08 | Seiko Instr Inc | Semiconductor non-volatile memory device |
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