JPH0328171A - Ceramic composition material - Google Patents
Ceramic composition materialInfo
- Publication number
- JPH0328171A JPH0328171A JP1159481A JP15948189A JPH0328171A JP H0328171 A JPH0328171 A JP H0328171A JP 1159481 A JP1159481 A JP 1159481A JP 15948189 A JP15948189 A JP 15948189A JP H0328171 A JPH0328171 A JP H0328171A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- silicon oxide
- composite material
- dielectric constant
- ceramic composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 37
- 239000000919 ceramic Substances 0.000 title claims abstract description 35
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052582 BN Inorganic materials 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 abstract description 15
- 239000011159 matrix material Substances 0.000 abstract description 5
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 8
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- -1 steatite Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
- 229910021491 α-tridymite Inorganic materials 0.000 description 1
- 229910021494 β-cristobalite Inorganic materials 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
- 229910021492 β-tridymite Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野１
本発明はセラミック複合材料に関し、特にエレクトロニ
クス用の進行波管支持体材料に用いられるセラミック複
合材料に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention relates to a ceramic composite material, and particularly to a ceramic composite material used as a traveling wave tube support material for electronics.
［従来の技術］
エレクトロニクスにおける構造体としての用途である進
行波管におけるＷやＭＯの金属らせんの支持体（サポー
トロツド）としては、従来の技術として、石英、ステア
タイト、ザファイヤ、へりリアが検討ざれてきたく丸善
（株〉出版の日本電信電話公社電気通信研究所編で小山
次郎著「進行波管」２０７ページ）。[Prior art] Quartz, steatite, zaphire, and herria have been considered as conventional technologies for supporting metal helices of W or MO in traveling wave tubes, which are used as structures in electronics. "Travelling Wave Tube" by Jiro Koyama, edited by Nippon Telegraph and Telephone Public Corporation Telecommunications Research Institute, published by Tetaku Maruzen Co., Ltd., page 207).
一方、近年では通信衛星や放送衛星用の進行波管におい
て、高周波数化のため支持体に対して従来材料よりも優
れた高周波特性としての低誘電率が重要になってきた。On the other hand, in recent years, in traveling wave tubes for communication satellites and broadcasting satellites, low dielectric constants have become important as supporting materials have better high frequency characteristics than conventional materials due to higher frequencies.
ざらに電子ビームの流入やｂロ熱による高周波損失を防
ぐためには、支持体には熱放散のために高熱伝導性も要
求される。゛従来の支持体材料である石英ガラス、石英
、ステアタイト、サファイア、ベリリアでは各々の室温
の誘電率はそれぞれ３．６， ４．３， ６．０，
９．６， ６．９であり、また各々の熱伝導率は
２．７．３，４０ ，２６０Ｗ／ｍ − Ｋであって、
低誘電率を実現しつつ高熱伝導性を保持することが困難
であった。In order to prevent high frequency loss due to the inflow of electron beams and heat, the support is also required to have high thermal conductivity for heat dissipation.゛The dielectric constants of conventional support materials such as quartz glass, quartz, steatite, sapphire, and beryllia at room temperature are 3.6, 4.3, 6.0, respectively.
9.6, 6.9, and their respective thermal conductivities are 2.7.3, 40, 260 W/m-K,
It has been difficult to maintain high thermal conductivity while achieving a low dielectric constant.
一方、最近では六方晶窒化ホウ素（ｈＢＮ）が低誘電率
と高熱伝導率を兼ね備えた材料として注目ざれつつある
。On the other hand, recently, hexagonal boron nitride (hBN) has been attracting attention as a material that has both low dielectric constant and high thermal conductivity.
［発明が解決しようとする課題］
六方晶窒化ホウ素（ｈＢＮ）は、黒鉛と同じく六角網面
の積層構造を有し、層内のａ軸方向が共有結合性であり
、積層面に垂直なＣ軸方向はフ７ンデエアワールス結合
による結晶構造のため、誘電率や熱伝導率に顕著な異方
性を示す。すなわち、ｈＢＮのａ軸方向の誘電率と熱伝
導率は各々５．１と６２ Ｗ／ｍ−Ｋであり、Ｃ軸方向
テハ３．５．！＝２Ｗ／ｍ−Ｋとの報告がある。[Problems to be Solved by the Invention] Hexagonal boron nitride (hBN) has a hexagonal network laminated structure like graphite, and the a-axis direction in the layer is covalent bonding, and C perpendicular to the laminated plane. In the axial direction, due to the crystal structure due to the Fundea-Waals bond, the dielectric constant and thermal conductivity exhibit remarkable anisotropy. That is, the dielectric constant and thermal conductivity of hBN in the a-axis direction are 5.1 and 62 W/m-K, respectively, and the dielectric constant in the c-axis direction is 3.5. ! There is a report that =2W/m-K.
また現在、進行波管支持体材料として、例えば気相戒長
法による熱分解窒化ホウ素（ＰＢＮ）であるユニオン・
カーバイド（ Ｕｎｉｏｎ Ｃａｒｂｉｄｅ）社の商品
名ＢＯＲＡＬＬＯＹが検討ざれ、一部実用化もされてい
る。しかしながらＢＯＲＡＬＬＯＹは、黒鉛などの基板
上に気相戒長法により或膜するため配向性が高く、材料
の面内方向と厚み方向では前述したように誘電率や熱伝
導率が顕著に異なる高異方性を示すため、低誘電率と高
熱伝導率を同時に発揮できない。At present, Union, which is pyrolyzed boron nitride (PBN) produced by the vapor phase method, is currently being used as a traveling wave tube support material.
Union Carbide's product name BORALLOY is being considered and some have even been put into practical use. However, BORALLOY has a high degree of orientation because it is deposited on a substrate such as graphite using the vapor phase method, and as mentioned above, the dielectric constant and thermal conductivity are significantly different in the in-plane direction and the thickness direction of the material. Because it exhibits tropism, it cannot exhibit low dielectric constant and high thermal conductivity at the same time.
すなわち、低誘電率３．５を利用するためにＣ軸方向を
支持体の使用方向とした場合には熱伝導率は約２Ｗ／ｍ
−Ｋと従来の石英、ステアタイト、リファイヤ、ベリリ
アよりもかなり小さく、熱放熱性に問題があった。また
熱敢敗のため熱伝導性の良いａ軸方向（６２Ｗ／ｍ −
Ｋ ）を支持体の使用方向とした場合には、誘電率が
５．１と高周波化のための低誘電率の要求としては十分
ではなかった。In other words, if the C-axis direction is used as the support direction to take advantage of the low dielectric constant of 3.5, the thermal conductivity is approximately 2 W/m.
-K is considerably smaller than conventional quartz, steatite, reffire, and beryllia, and has a problem with heat dissipation. In addition, due to heat resistance, the a-axis direction has good thermal conductivity (62W/m -
When the direction of use of the support was K ), the dielectric constant was 5.1, which was not sufficient to meet the requirements for a low dielectric constant for higher frequencies.
またＢＯＲＡＬＬＯＹは六方晶窒化ホウ素の本質的な性
質である積層構造に基づいたａ軸とＣ軸の異方性を有す
る配向構造のため、層閤でしばしば剥離および亀裂を生
ずるなど構造体としての信頼性にも問題が多くあった。In addition, BORALLOY has an oriented structure with anisotropy of the a-axis and c-axis based on the layered structure, which is an essential property of hexagonal boron nitride, so it often peels and cracks in the layers, making it unreliable as a structure. There were also many problems with sexuality.
ざらに熱分解窒化ホウ素は気相戒長法による製造方法で
作られているため、大型で厚い製品が多量に生産できな
いうえ、コストが高いなどの工業的問題点も存在してい
た。Since pyrolytic boron nitride is manufactured using the vapor phase process, it is not possible to produce large, thick products in large quantities, and there are also industrial problems such as high costs.
本発明者はこのような点に対処して鋭意研究を進めた結
果、六方晶窒化ホウ素と酸化ケイ素から構戒されたセラ
ミック複合材料が低誘電率と高熱伝導率を兼ね備え、構
造上の信頼性にも優れるため進行波管の支持体として最
適であることを見い出し、本発明を完成するに至った。As a result of intensive research in response to these points, the present inventor found that a ceramic composite material made from hexagonal boron nitride and silicon oxide has both low dielectric constant and high thermal conductivity, and has high structural reliability. The present inventors have discovered that this material is ideal as a support for traveling wave tubes due to its excellent properties, and have completed the present invention.
［８！題を解決するための手段］
本発明は、六方晶窒化ホウ素と酸化ケイ素とを主戒分と
して構成されてなることを特徴とするセラミック複合材
料である。[8! Means for Solving the Problem] The present invention is a ceramic composite material characterized by being composed of hexagonal boron nitride and silicon oxide as main components.
以下、本発明をさらに詳しく説明する。The present invention will be explained in more detail below.
本発明のセラミック複合材料は六方晶窒化ホウ素と酸化
ケイ素を主戒分とするもので、酸化ケイ素マトリックス
中に六方晶窒化ホウ素粉末が均一に分散された複合構造
、もしくは多孔質窒化ホウ素セラミックスに酸化ケイ素
が充填ざれた複合構造を特徴としている。The ceramic composite material of the present invention mainly contains hexagonal boron nitride and silicon oxide, and has a composite structure in which hexagonal boron nitride powder is uniformly dispersed in a silicon oxide matrix, or a porous boron nitride ceramic. It features a composite structure filled with silicon.
第１図は、このうち前者の酸化ケイ素マトリックス２中
に六方晶窒化ホウ素粉末３が均一分散ざれた複合構造を
有ずる本発明のセラミック複合材料１を模式的に示す断
面図であり、第２図は後者の多孔質窒化ホウ素セラミッ
クス３に酸化ケイ素２が充填ざれた複合構造を有する本
発明のセラミック複合材料１を模式的に示す断面図であ
る。FIG. 1 is a cross-sectional view schematically showing a ceramic composite material 1 of the present invention having a composite structure in which hexagonal boron nitride powder 3 is uniformly dispersed in a silicon oxide matrix 2. The figure is a cross-sectional view schematically showing a ceramic composite material 1 of the present invention having a composite structure in which silicon oxide 2 is filled in the latter porous boron nitride ceramic 3.
本発明の六方晶窒化ホウ素と酸化ケイ素から構成ざれる
セラミック複合材料は、最大５０％程度の気孔を含有す
ることも誘電率を低下させるために有効である。しかし
ながら、気孔率が５０％以上になると、進行波管支持体
等の構造体的利用において機械的強度が不十分となる問
題がある。It is also effective for the ceramic composite material composed of hexagonal boron nitride and silicon oxide of the present invention to contain pores of up to about 50% in order to lower the dielectric constant. However, when the porosity is 50% or more, there is a problem that the mechanical strength becomes insufficient when used in structures such as traveling wave tube supports.
また、セラミック複合材料の純度は、六方晶窒化ホウ素
と酸化ケイ素の合計として９８％以上のものが好ましい
が、９５〜９８％のものも可能でアル。不純物としては
、Ｃａ，Ｍｇ，Ａｈ Ｓｉ，Ｆｅ，Ｃｒ，Ｃｕ，”ｌｎ
等が含まれるが、これらの不純物量が多くなると誘電率
が増大したり、熱伝導率が低下するなどの問題が生ずる
。Further, the purity of the ceramic composite material is preferably 98% or more as the total of hexagonal boron nitride and silicon oxide, but it is also possible to have a purity of 95 to 98%. Impurities include Ca, Mg, Ah Si, Fe, Cr, Cu, "ln
However, when the amount of these impurities increases, problems such as an increase in dielectric constant and a decrease in thermal conductivity occur.
本発明のセラミック複合材料での六方晶窒化ホウ素の配
合量は５〜９９重量％、好ましくは１０〜９５重量％で
あることが誘電率や熱伝導率の改善に有効である。The content of hexagonal boron nitride in the ceramic composite material of the present invention is 5 to 99% by weight, preferably 10 to 95% by weight, which is effective for improving the dielectric constant and thermal conductivity.
また酸化ケイ素としては、石英ガラスが誘電率を小さく
するために有効であるが、β−クリストバライト，β一
トリジマイト，β一石英，α−クルストバライト，α一
石英．α一トリジマイトの結晶構造の酸化ケイ素も有効
である。As silicon oxide, silica glass is effective in reducing the dielectric constant, but β-cristobalite, β-tridymite, β-quartz, α-crustobalite, α-quartz, etc. Silicon oxide having the α-tridymite crystal structure is also effective.
本発明のセラミック複合材料は、例えば次のような方法
によって製造できる。The ceramic composite material of the present invention can be manufactured, for example, by the following method.
第１図に示す酸化ケイ素マトリックス中に六方晶窒化ホ
ウ素粉末が均一分敗された複合構造のセラミック複合体
の場合、所定組戊比に配合ざれた酸化ケイ素粉末と窒化
ホウ素粉末をボールミル等で混合し、戊形した後、ｉｏ
ｏｏ〜２０００℃程度の常圧または加圧の非酸化性雰囲
気で加熱処理することにより製造することができる。In the case of a ceramic composite with a composite structure in which hexagonal boron nitride powder is uniformly partitioned into a silicon oxide matrix as shown in Figure 1, silicon oxide powder and boron nitride powder mixed in a predetermined composition ratio are mixed in a ball mill, etc. and after the oval, io
It can be produced by heat treatment in a normal pressure or pressurized non-oxidizing atmosphere at about 0 to 2000°C.
この場合、窒化ホウ素粉末の配合量は５〜６０重量％程
度が酸化ケイ素マトリックス中に窒化ホウ素粉末を均一
に分散させるのに適している。熱処理のための非酸化性
雰囲気としては、窒素ガス、アルゴンガス、真空雰囲気
などが便利である。また前述の製造工程において、酸化
ケイ素粉末の代わりに有機金属化合物であるアルキルシ
リケート（例えばエチルシリケート等〉を原料とするこ
ともできる。In this case, a blending amount of boron nitride powder of about 5 to 60% by weight is suitable for uniformly dispersing the boron nitride powder in the silicon oxide matrix. Convenient non-oxidizing atmospheres for heat treatment include nitrogen gas, argon gas, and vacuum atmosphere. Further, in the above-mentioned manufacturing process, an alkyl silicate (for example, ethyl silicate), which is an organometallic compound, can be used as a raw material instead of silicon oxide powder.
第２図に示す多孔質窒化ホウ素セラミックスに酸化ケイ
素が充填ざれた複合構造を有するセラミック複合体の場
合、窒化ホウ素粉末を６０〜９５重量％配合された酸化
ケイ素粉末と窒化ホウ素粉末を前述の製造方法と同様に
混合、戊形、加熱処理して製造することが可能である。In the case of a ceramic composite having a composite structure in which porous boron nitride ceramic is filled with silicon oxide as shown in Fig. 2, silicon oxide powder and boron nitride powder containing 60 to 95% by weight of boron nitride powder are manufactured as described above. It can be manufactured by mixing, shaping, and heat treatment in the same manner as in the above method.
また窒化ホウ素粉末のみを戒型、加熱処理して多孔貿の
窒化ホウ素セラミックスを作製した後、溶融した酸化ケ
イ素融体を注入する方法や、溶媒に溶かした有機金属化
合物であるアルキルシリケート（例えばエチルシリケー
ト等）を含浸し、乾燥、熱分解、加熱処理するなどの方
法も利用することができる。In addition, there is a method in which only boron nitride powder is molded and heat treated to produce porous boron nitride ceramics, and then molten silicon oxide is injected into the ceramic, or alkyl silicate, which is an organometallic compound dissolved in a solvent (for example, ethyl It is also possible to use methods such as impregnation with silicates (silicates, etc.), drying, thermal decomposition, heat treatment, etc.
本発明の六方晶窒化ホウ素と酸化ケイ素から構或される
セラミック複合体は、室温での誘電率が２．５〜５（周
波数ＩＭＨＺ）で、熱伝導率が１０Ｗ／ｍ−Ｋ以上であ
るという優れた特性以外に、従来の進行波管支持体材料
である熱分解窒化ホウ素（ＰＡＮ＞より優れた圧縮強度
等の機械的特性も有する。すなわち、ＰＢＮの室温での
圧縮強度が２３４０ Ｋｌ／Ｃｍ２であるのに対して、
本発明のセラミック複合体は３０００ 〜１００００Ｎ
ｇ／ｃｍ２の優れた圧縮強度を有する。このため、ＰＢ
Ｎのように剥離および亀裂を生ずるなどの問題もない。The ceramic composite composed of hexagonal boron nitride and silicon oxide of the present invention has a dielectric constant of 2.5 to 5 (frequency IMHZ) at room temperature and a thermal conductivity of 10 W/mK or more. In addition to its excellent properties, it also has mechanical properties such as compressive strength superior to that of pyrolytic boron nitride (PAN), which is a conventional traveling wave tube support material. That is, the compressive strength of PBN at room temperature is 2340 Kl/Cm2. Whereas,
The ceramic composite of the present invention is 3000 to 10000N
It has an excellent compressive strength of g/cm2. For this reason, P.B.
Unlike N, there is no problem of peeling or cracking.
また窒化ホウ素の含有量が１０〜９９％の場合、普通工
具で切削加工できる長所もある。さらに常圧焼結法で製
造した場合、大型で厚い製品を低コストで製造できるな
どの数多くの利点がある。Moreover, when the content of boron nitride is 10 to 99%, it has the advantage that it can be cut with ordinary tools. Furthermore, when manufactured using the pressureless sintering method, there are many advantages such as the ability to manufacture large and thick products at low cost.
本発明を更に具体的に説明するため次に実施例を挙げて
説明するが、本発明はこれらの実施例に限定されるもの
ではない。EXAMPLES In order to explain the present invention more specifically, Examples will be given below, but the present invention is not limited to these Examples.
［実施例］
実施例１
平均粒径５μｓ、純度９９％の窒化ホウ素粉末６０重量
％と平均粒径０．２ｌｌＩｎ、純度９９％の石英ガラス
粉末４０重量％とを配合した粉末を用い、エタノールを
液体分敗媒としてボールミルで混合した。この混合粉末
を１０００ Ｋｙ／ｃｍ２の圧力でプレス成形した後、
１５００℃、常圧窒素ガス雰囲気、１時間の条件で加熱
処理した。得られたセラミック複合体の気孔率は１０％
であり、室温での誘電率は３．５（周波数ＩＭＨＺ）、
熱伝導率は２０Ｗ／ｍ−Ｋ，圧縮強度は８０００ Ｎｙ
／ｃｍ２であり、進行波管支持体材料として優れた特性
を有していた。[Example] Example 1 A powder containing 60% by weight of boron nitride powder with an average particle size of 5 μs and a purity of 99% and 40% by weight of a quartz glass powder with an average particle size of 0.2 lIn and a purity of 99% was used, and ethanol was used. It was mixed in a ball mill as a liquid separation medium. After press-molding this mixed powder at a pressure of 1000 Ky/cm2,
Heat treatment was performed at 1500° C. in a nitrogen gas atmosphere at normal pressure for 1 hour. The porosity of the obtained ceramic composite is 10%
, the dielectric constant at room temperature is 3.5 (frequency IMHZ),
Thermal conductivity is 20W/m-K, compressive strength is 8000 Ny
/cm2, and had excellent properties as a traveling wave tube support material.
このセラミック複合体を切断加工後、０．２５ ｘＯ，
５Ｘ １００ｍｍの長い直方体状の進行波管支持体を作
製して進行波管に実装した。第３図（ａ）はその断面図
、第３図（ｂ）は（ａ）におけるＡ−Ａ一による断面図
である。タングステンコイル６は３本の支持体５で３方
向からステンレス保護管９により圧縮保持ざれている。After cutting this ceramic composite, 0.25 xO,
A traveling wave tube support in the shape of a long rectangular parallelepiped measuring 5×100 mm was prepared and mounted on a traveling wave tube. FIG. 3(a) is a sectional view thereof, and FIG. 3(b) is a sectional view taken along line A-A in FIG. 3(a). The tungsten coil 6 is compressed and held by stainless steel protective tubes 9 from three directions by three supports 5.
７はカソード、８はコレクターである。支持体５はタン
グステンコイル６とステンレス保護管９の内壁の３点か
ら圧縮およびせん断の応力を受けているが、熱分解窒化
ホウ素で生じる剥離や亀裂は発生しなかった。7 is a cathode, and 8 is a collector. Although the support 5 was subjected to compressive and shear stress from three points: the tungsten coil 6 and the inner wall of the stainless steel protective tube 9, no peeling or cracking caused by pyrolytic boron nitride occurred.
実施例２
平均粒径１０ｔｌＩｎ，純度９９．５％の窒化ホウ素粉
末と平均粒径ｏ． ｉ仰、純度９９，５％の石英ガラス
粉末を第１表に示す割合で配合して実施例１と同様に混
合、プレス成型した。このプレス混合粉体を第１表に示
す条件で加熱処理したところ、低誘電率と高熱伝導率が
共に実現された。これらの特性は進行波管の支持体材料
として良好な値を有するものであった。Example 2 Boron nitride powder with an average particle size of 10 tlIn and a purity of 99.5% and an average particle size of o. Quartz glass powder with a purity of 99.5% was blended in the proportions shown in Table 1, mixed and press-molded in the same manner as in Example 1. When this pressed mixed powder was heat treated under the conditions shown in Table 1, both low dielectric constant and high thermal conductivity were achieved. These properties had good values as a support material for traveling wave tubes.
（以下余白〉
実施例３
平均粒径２珈、純度９８％の窒化ホウ素粉末を２０００
Ｋｇ／ｃｍ２の圧力で冷間等方加圧戒形した後、常圧
窒素ガス雰囲気下で１９００℃、２時間の条件で焼結し
て気孔率２５％の多孔質窒化ホウ素セラミックを作製し
た。この多孔質窒化ホウ素セラミックを市販のエチルシ
リケート（ Ｓｉ（ＯＥｔ）４）、エタノール、希塩酸
を含む水溶液に含浸した後、乾燥して１２００℃、窒素
中で１時間加熱処理してセラミック複合体を得た。この
セラミック複合体の気孔率は１５％であり、室温での誘
−電率は３．０〈周波数ＩＭＨＺ）、熱伝導率は７０
Ｗ／ｍ−Ｋ、圧縮強度は５０００ Ｎｇ／Ｃｍ２である
などの進行波管支持体材料として優れた特性を有してい
た。(Left below) Example 3 Boron nitride powder with an average particle size of 2 C and a purity of 98% was
After cold isostatic pressing at a pressure of Kg/cm2, sintering was performed at 1900° C. for 2 hours in a nitrogen gas atmosphere at normal pressure to produce a porous boron nitride ceramic with a porosity of 25%. This porous boron nitride ceramic was impregnated with an aqueous solution containing commercially available ethyl silicate (Si(OEt)4), ethanol, and diluted hydrochloric acid, then dried and heat-treated at 1200°C in nitrogen for 1 hour to obtain a ceramic composite. Ta. The porosity of this ceramic composite is 15%, the dielectric constant at room temperature is 3.0 (frequency IMHZ), and the thermal conductivity is 70.
It had excellent properties as a traveling wave tube support material, such as W/m-K and compressive strength of 5000 Ng/Cm2.
［発明の効果］
以上説明したように、本発明のセラミック複合材料は、
進行波管支持体として従来の支持体材料である石英、ス
テアタイト、サフ７イヤ、ベリリア、熱分解窒化ホウ素
よりも優れた低誘電率と高熱伝導率を兼ね備えた材料で
あり、熱分解窒化ホウ素のような特性の異方性も少なく
、しかも剥離や亀裂などの発生の問題もない。また窒化
ホウ素の量を１０〜９９重量％にすることにより、普通
工具で切削加工できる長所も存在する。さらに熱分解窒
化ホウ素では困難な、大型で厚い製品を多量に低コスト
で製造することが可能であるなど、工業的に多くの利点
を有するものである。[Effects of the Invention] As explained above, the ceramic composite material of the present invention has the following effects:
Pyrolytic boron nitride is a material that has a lower dielectric constant and higher thermal conductivity that are superior to conventional support materials such as quartz, steatite, saph 7-year, beryllia, and pyrolytic boron nitride as a traveling wave tube support. There is little anisotropy in properties such as, and there is no problem of peeling or cracking. Further, by controlling the amount of boron nitride to 10 to 99% by weight, there is an advantage that cutting can be performed using ordinary tools. Furthermore, it has many industrial advantages, such as the ability to manufacture large, thick products in large quantities at low cost, which is difficult to do with pyrolytic boron nitride.
また本発明のセラミック複合材料は、進行波管の支持体
以外の用途である電子部品、絶縁基板などにも利用でき
る効果もある。Furthermore, the ceramic composite material of the present invention can also be used for electronic components, insulating substrates, etc. other than as a support for traveling wave tubes.
第１図および第２図はそれぞれ本発明の一実施例の複合
構造を模型的に示す断面図、第３図は進行波管の断面図
（ａ）および（ａ）のＡ−Ａ一線による断面図（ｂ）で
ある。
１・・・セラミック複合材料
２・・・酸化ケイ素
３・・・六方晶窒化ホウ素
４・・・気孔
５・・・支持体
６・・・タングステンコイル
７・・・カソード
８・・・コレクター
９・・・ステンレス保護管FIGS. 1 and 2 are cross-sectional views schematically showing a composite structure according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a traveling wave tube (a), and a cross-sectional view taken along line A-A in (a). It is figure (b). 1... Ceramic composite material 2... Silicon oxide 3... Hexagonal boron nitride 4... Pores 5... Support 6... Tungsten coil 7... Cathode 8... Collector 9.・・Stainless steel protection tube
Claims (1)
構成されてなることを特徴とするセラミツク複合材料。(1) A ceramic composite material comprising hexagonal boron nitride and silicon oxide as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1159481A JPH0328171A (en) | 1989-06-23 | 1989-06-23 | Ceramic composition material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1159481A JPH0328171A (en) | 1989-06-23 | 1989-06-23 | Ceramic composition material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0328171A true JPH0328171A (en) | 1991-02-06 |
Family
ID=15694714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1159481A Pending JPH0328171A (en) | 1989-06-23 | 1989-06-23 | Ceramic composition material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0328171A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002187768A (en) * | 2000-12-20 | 2002-07-05 | Nippon Electric Glass Co Ltd | Low temperature sintering dielectric material for high frequency and sintered body of the same |
| CN114538933A (en) * | 2020-11-24 | 2022-05-27 | 娄底市安地亚斯电子陶瓷有限公司 | Method for manufacturing travelling wave tube clamping rod |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61215261A (en) * | 1985-03-20 | 1986-09-25 | エレクトロシユメルツヴエルク・ケンプテン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Bo ron nitride base sintered polycrystal composite material |
| JPS63315537A (en) * | 1987-06-16 | 1988-12-23 | Asahi Glass Co Ltd | Sintered compact |
| JPH01131066A (en) * | 1987-11-14 | 1989-05-23 | Denki Kagaku Kogyo Kk | Boron nitride based compact calcined under ordinary pressure |
-
1989
- 1989-06-23 JP JP1159481A patent/JPH0328171A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61215261A (en) * | 1985-03-20 | 1986-09-25 | エレクトロシユメルツヴエルク・ケンプテン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Bo ron nitride base sintered polycrystal composite material |
| JPS63315537A (en) * | 1987-06-16 | 1988-12-23 | Asahi Glass Co Ltd | Sintered compact |
| JPH01131066A (en) * | 1987-11-14 | 1989-05-23 | Denki Kagaku Kogyo Kk | Boron nitride based compact calcined under ordinary pressure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002187768A (en) * | 2000-12-20 | 2002-07-05 | Nippon Electric Glass Co Ltd | Low temperature sintering dielectric material for high frequency and sintered body of the same |
| JP4569000B2 (en) * | 2000-12-20 | 2010-10-27 | 日本電気硝子株式会社 | Low-frequency sintered dielectric material for high frequency and its sintered body |
| CN114538933A (en) * | 2020-11-24 | 2022-05-27 | 娄底市安地亚斯电子陶瓷有限公司 | Method for manufacturing travelling wave tube clamping rod |
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