JPH0328065B2 - - Google Patents

Info

Publication number
JPH0328065B2
JPH0328065B2 JP60182198A JP18219885A JPH0328065B2 JP H0328065 B2 JPH0328065 B2 JP H0328065B2 JP 60182198 A JP60182198 A JP 60182198A JP 18219885 A JP18219885 A JP 18219885A JP H0328065 B2 JPH0328065 B2 JP H0328065B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor layer
sqw
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60182198A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242569A (ja
Inventor
Yasumi Hikosaka
Yasutaka Hirachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18219885A priority Critical patent/JPS6242569A/ja
Priority to DE86401845T priority patent/DE3689433T2/de
Priority to EP86401845A priority patent/EP0214047B1/en
Publication of JPS6242569A publication Critical patent/JPS6242569A/ja
Priority to US07/593,502 priority patent/US5023674A/en
Publication of JPH0328065B2 publication Critical patent/JPH0328065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP18219885A 1985-08-20 1985-08-20 電界効果型トランジスタ Granted JPS6242569A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP18219885A JPS6242569A (ja) 1985-08-20 1985-08-20 電界効果型トランジスタ
DE86401845T DE3689433T2 (de) 1985-08-20 1986-08-20 Feldeffekttransistor.
EP86401845A EP0214047B1 (en) 1985-08-20 1986-08-20 Field effect transistor
US07/593,502 US5023674A (en) 1985-08-20 1990-10-04 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18219885A JPS6242569A (ja) 1985-08-20 1985-08-20 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS6242569A JPS6242569A (ja) 1987-02-24
JPH0328065B2 true JPH0328065B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=16114063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18219885A Granted JPS6242569A (ja) 1985-08-20 1985-08-20 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JPS6242569A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0314836A1 (en) * 1987-11-06 1989-05-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor device in particular a hot electron transistor
JP2695832B2 (ja) * 1988-04-20 1998-01-14 株式会社東芝 ヘテロ接合型電界効果トランジスタ
JPH02284434A (ja) * 1989-04-26 1990-11-21 Nec Corp 電界効果トランジスタ
JPH04314328A (ja) * 1991-04-12 1992-11-05 Nec Corp Ｉｉｉ−ｖ族化合物半導体のド−ピング方法
KR940006711B1 (ko) * 1991-09-12 1994-07-25 포항종합제철 주식회사 델타도핑 양자 우물전계 효과 트랜지스터의 제조방법
GB0415995D0 (en) * 2004-07-16 2004-08-18 Song Aimin Memory array
EP1866581A1 (en) * 2005-03-17 2007-12-19 OnTech Delaware, Inc. Container with integral module for heating or cooling the contents

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117680A (ja) * 1983-11-29 1985-06-25 Nippon Telegr & Teleph Corp <Ntt> 高速電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6242569A (ja) 1987-02-24

Similar Documents

Publication Publication Date Title
US5023674A (en) Field effect transistor
US4916498A (en) High electron mobility power transistor
JP2676442B2 (ja) ヘテロ接合電界効果トランジスタおよびその製造方法
US5488237A (en) Semiconductor device with delta-doped layer in channel region
JPH05275463A (ja) 半導体装置
JPH0783107B2 (ja) 電界効果トランジスタ
KR20010032538A (ko) 전계효과 트랜지스터
JPH0624208B2 (ja) 半導体装置
JPS5891682A (ja) 半導体装置
JPH0328065B2 (enrdf_load_stackoverflow)
US4903091A (en) Heterojunction transistor having bipolar characteristics
US5466955A (en) Field effect transistor having an improved transistor characteristic
US5900641A (en) Field effect semiconductor device having a reduced leakage current
JPS61147577A (ja) 相補型半導体装置
JPH0311108B2 (enrdf_load_stackoverflow)
JP3054216B2 (ja) 半導体装置
US5583353A (en) Heterojunction field effect transistor
JP3053862B2 (ja) 半導体装置
JP3653652B2 (ja) 半導体装置
JPH0620142B2 (ja) 半導体装置
JP2695832B2 (ja) ヘテロ接合型電界効果トランジスタ
JPS6068661A (ja) 半導体装置
JP2834172B2 (ja) 電界効果トランジスタ
JP2964625B2 (ja) 化合物半導体電界効果トランジスタ
JPS6159877A (ja) 半導体集積回路