JPH0326821B2 - - Google Patents
Info
- Publication number
- JPH0326821B2 JPH0326821B2 JP58095650A JP9565083A JPH0326821B2 JP H0326821 B2 JPH0326821 B2 JP H0326821B2 JP 58095650 A JP58095650 A JP 58095650A JP 9565083 A JP9565083 A JP 9565083A JP H0326821 B2 JPH0326821 B2 JP H0326821B2
- Authority
- JP
- Japan
- Prior art keywords
- azide
- photoresist
- photosensitive composition
- condensate
- photoresists
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- -1 aromatic azide compound Chemical class 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 12
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 6
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 claims description 6
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims description 3
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 3
- 125000003172 aldehyde group Chemical group 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 238000006482 condensation reaction Methods 0.000 claims description 2
- 150000002989 phenols Chemical class 0.000 claims description 2
- CDDGRARTNILYAB-UHFFFAOYSA-N 5,5-dimethylcyclohex-2-en-1-one Chemical compound CC1(C)CC=CC(=O)C1 CDDGRARTNILYAB-UHFFFAOYSA-N 0.000 claims 1
- YEYIOWYWATULOH-UHFFFAOYSA-N diazonio-[1-(5,5-dimethyl-3-oxocyclohexen-1-yl)-2-phenylethenyl]azanide Chemical group C1C(C)(C)CC(=O)C=C1C([N-][N+]#N)=CC1=CC=CC=C1 YEYIOWYWATULOH-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 36
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 150000001540 azides Chemical class 0.000 description 9
- 239000002904 solvent Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- NHTBGGLIHGSCFA-UHFFFAOYSA-N 2-azidobenzaldehyde Chemical compound [N-]=[N+]=NC1=CC=CC=C1C=O NHTBGGLIHGSCFA-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- UZNOMHUYXSAUPB-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]cyclohexan-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=C(CCC1)C(=O)C1=CC1=CC=C(N=[N+]=[N-])C=C1 UZNOMHUYXSAUPB-UHFFFAOYSA-N 0.000 description 1
- HFABTVPOBYBTRU-UHFFFAOYSA-N 3-(4-azidophenyl)-1-(4-methoxyphenyl)prop-2-en-1-one Chemical compound C1=CC(OC)=CC=C1C(=O)C=CC1=CC=C(N=[N+]=[N-])C=C1 HFABTVPOBYBTRU-UHFFFAOYSA-N 0.000 description 1
- ZINPXDNDEIAROY-UHFFFAOYSA-N 3-[2-(4-azidophenyl)ethenyl]-5,5-dimethylcyclohex-2-en-1-one Chemical compound C1C(C)(C)CC(=O)C=C1C=CC1=CC=C(N=[N+]=[N-])C=C1 ZINPXDNDEIAROY-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KZTQGYGRVHCTMU-UHFFFAOYSA-N diazonio-(3-oxo-1-phenylprop-1-en-2-yl)azanide Chemical compound [N-]=[N+]=NC(C=O)=CC1=CC=CC=C1 KZTQGYGRVHCTMU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- 235000019801 trisodium phosphate Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C247/00—Compounds containing azido groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/128—Radiation-activated cross-linking agent containing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58095650A JPS59222833A (ja) | 1983-06-01 | 1983-06-01 | 感光性組成物 |
| US06/615,749 US4565768A (en) | 1983-06-01 | 1984-05-31 | Photosensitive azide composition with alkali soluble polymer and process of using to form resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58095650A JPS59222833A (ja) | 1983-06-01 | 1983-06-01 | 感光性組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59222833A JPS59222833A (ja) | 1984-12-14 |
| JPH0326821B2 true JPH0326821B2 (OSRAM) | 1991-04-12 |
Family
ID=14143371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58095650A Granted JPS59222833A (ja) | 1983-06-01 | 1983-06-01 | 感光性組成物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4565768A (OSRAM) |
| JP (1) | JPS59222833A (OSRAM) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166542A (ja) * | 1985-01-18 | 1986-07-28 | Hitachi Chem Co Ltd | 感光性組成物 |
| JPS61189636A (ja) * | 1985-02-19 | 1986-08-23 | Ushio Inc | キセノン・水銀放電灯による半導体ウエハ−の露光方法 |
| JPS62160441A (ja) * | 1986-01-09 | 1987-07-16 | Hitachi Chem Co Ltd | ホトレジスト用感光性組成物 |
| JP2670711B2 (ja) * | 1990-05-29 | 1997-10-29 | 富士写真フイルム株式会社 | ネガ型感光性樹脂組成物用現像液 |
| US7896885B2 (en) * | 2002-12-03 | 2011-03-01 | Arthrosurface Inc. | Retrograde delivery of resurfacing devices |
| US7713305B2 (en) * | 2000-05-01 | 2010-05-11 | Arthrosurface, Inc. | Articular surface implant |
| US6610067B2 (en) | 2000-05-01 | 2003-08-26 | Arthrosurface, Incorporated | System and method for joint resurface repair |
| US7163541B2 (en) | 2002-12-03 | 2007-01-16 | Arthrosurface Incorporated | Tibial resurfacing system |
| US7678151B2 (en) | 2000-05-01 | 2010-03-16 | Ek Steven W | System and method for joint resurface repair |
| US6520964B2 (en) | 2000-05-01 | 2003-02-18 | Std Manufacturing, Inc. | System and method for joint resurface repair |
| US8177841B2 (en) * | 2000-05-01 | 2012-05-15 | Arthrosurface Inc. | System and method for joint resurface repair |
| FR2831534B1 (fr) * | 2001-10-29 | 2004-01-30 | Oreal | Composition photoactivable et utilisations |
| US7901408B2 (en) | 2002-12-03 | 2011-03-08 | Arthrosurface, Inc. | System and method for retrograde procedure |
| US7914545B2 (en) * | 2002-12-03 | 2011-03-29 | Arthrosurface, Inc | System and method for retrograde procedure |
| US8388624B2 (en) | 2003-02-24 | 2013-03-05 | Arthrosurface Incorporated | Trochlear resurfacing system and method |
| EP1765201A4 (en) * | 2004-06-28 | 2013-01-23 | Arthrosurface Inc | SYSTEM FOR THE BENDING AREA |
| US7828853B2 (en) * | 2004-11-22 | 2010-11-09 | Arthrosurface, Inc. | Articular surface implant and delivery system |
| WO2008073404A2 (en) | 2006-12-11 | 2008-06-19 | Arthrosurface Incorporated | Retrograde resection apparatus and method |
| WO2009111481A1 (en) | 2008-03-03 | 2009-09-11 | Arthrosurface Incorporated | Bone resurfacing system and method |
| CA2759027C (en) * | 2009-04-17 | 2020-02-25 | Arthrosurface Incorporated | Glenoid resurfacing system and method |
| WO2016154393A1 (en) | 2009-04-17 | 2016-09-29 | Arthrosurface Incorporated | Glenoid repair system and methods of use thereof |
| WO2010121250A1 (en) | 2009-04-17 | 2010-10-21 | Arthrosurface Incorporated | Glenoid resurfacing system and method |
| WO2011109836A1 (en) | 2010-03-05 | 2011-09-09 | Arthrosurface Incorporated | Tibial resurfacing system and method |
| US9066716B2 (en) | 2011-03-30 | 2015-06-30 | Arthrosurface Incorporated | Suture coil and suture sheath for tissue repair |
| WO2013096746A1 (en) | 2011-12-22 | 2013-06-27 | Arthrosurface Incorporated | System and method for bone fixation |
| WO2014008126A1 (en) | 2012-07-03 | 2014-01-09 | Arthrosurface Incorporated | System and method for joint resurfacing and repair |
| US9492200B2 (en) | 2013-04-16 | 2016-11-15 | Arthrosurface Incorporated | Suture system and method |
| US10624748B2 (en) | 2014-03-07 | 2020-04-21 | Arthrosurface Incorporated | System and method for repairing articular surfaces |
| US11607319B2 (en) | 2014-03-07 | 2023-03-21 | Arthrosurface Incorporated | System and method for repairing articular surfaces |
| US9931219B2 (en) | 2014-03-07 | 2018-04-03 | Arthrosurface Incorporated | Implant and anchor assembly |
| US11160663B2 (en) | 2017-08-04 | 2021-11-02 | Arthrosurface Incorporated | Multicomponent articular surface implant |
| GB2616360B (en) | 2019-03-12 | 2023-11-29 | Arthrosurface Inc | Humeral and glenoid articular surface implant systems and methods |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2940853A (en) * | 1958-08-21 | 1960-06-14 | Eastman Kodak Co | Azide sensitized resin photographic resist |
| DE1572069C3 (de) * | 1966-03-12 | 1976-01-08 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliche Schicht zur Herstellung von Druckformen |
| DE1597614B2 (de) * | 1967-07-07 | 1977-06-23 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliche kopiermasse |
| US3749713A (en) * | 1972-02-28 | 1973-07-31 | Ibm | Novel azide compounds |
| JPS511444A (ja) * | 1974-06-24 | 1976-01-08 | Hitachi Ltd | Suiyoseikankoseisoseibutsugenryono seizohoho |
| JPS5664335A (en) * | 1979-10-29 | 1981-06-01 | Fuji Photo Film Co Ltd | Photosensitive composition |
| JPS57211145A (en) * | 1981-06-23 | 1982-12-24 | Japan Synthetic Rubber Co Ltd | Photoresist composition |
-
1983
- 1983-06-01 JP JP58095650A patent/JPS59222833A/ja active Granted
-
1984
- 1984-05-31 US US06/615,749 patent/US4565768A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4565768A (en) | 1986-01-21 |
| JPS59222833A (ja) | 1984-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0326821B2 (OSRAM) | ||
| US4738915A (en) | Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone | |
| JPH052226B2 (OSRAM) | ||
| JPH0727203B2 (ja) | フォトレジスト及び該フォトレジストを有する物品の製法 | |
| US5858627A (en) | Image formation utilizing photosensitive compositions containing low metal content p-cresol oligomers | |
| US4588670A (en) | Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist | |
| US4596763A (en) | Positive photoresist processing with mid U-V range exposure | |
| JPH07119192B2 (ja) | 新規の感放射線化合物、それで調製された感放射線混合物および複写材料 | |
| EP0390173B1 (en) | Micropattern-forming material and process for forming micropattern | |
| JP2638887B2 (ja) | 感光性組成物 | |
| US5225312A (en) | Positive photoresist containing dyes | |
| JPH0727202B2 (ja) | フォトレジスト並びに該フォトレジストを有する製品の製法 | |
| US4902603A (en) | Photoresist compositions containing selected 6-acetoxy cyclohexadienone photosensitizers and novolak resins | |
| US5221592A (en) | Diazo ester of a benzolactone ring compound and positive photoresist composition and element utilizing the diazo ester | |
| JPH06348018A (ja) | 感放射線レジスト組成物 | |
| JP2571130B2 (ja) | レジスト組成物 | |
| EP0827024A2 (en) | Radiation-sensitive resin composition | |
| US4797345A (en) | Light-sensitive 1,2-naphthoquinone-2-diazide-4-sulfonic acid monoesters of cycloalkyl substituted phenol and their use in light-sensitive mixtures | |
| KR100238569B1 (ko) | 포지티브형 단편 조성물 및 패턴형성방법 | |
| US5290666A (en) | Method of forming a positive photoresist pattern utilizing contrast enhancement overlayer containing trifluoromethanesulfonic, methanesulfonic or trifluoromethaneacetic aromatic diazonium salt | |
| US5258265A (en) | Aqueous developable deep UV negative resist | |
| EP0788620B1 (en) | Positive photosensitive composition | |
| US5178987A (en) | Aqueous developable deep UV negative resist containing benzannelated acetic acid and novolak resin | |
| US5258260A (en) | Aqueous developable deep UV negative resist | |
| WO1998014833A1 (en) | Light sensitive composition containing an arylhydrazo dye |