JPH03263842A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPH03263842A JPH03263842A JP2063230A JP6323090A JPH03263842A JP H03263842 A JPH03263842 A JP H03263842A JP 2063230 A JP2063230 A JP 2063230A JP 6323090 A JP6323090 A JP 6323090A JP H03263842 A JPH03263842 A JP H03263842A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- capillary
- semiconductor chip
- loop
- wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000007664 blowing Methods 0.000 description 5
- 238000010892 electric spark Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
- H01L2224/8218—Translational movements
- H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はワイヤボンディング方法に関し、詳しくは、キ
ャピラリの下端部から導出されるワイヤのループ形状の
コントロール方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a wire bonding method, and more particularly to a method for controlling the loop shape of a wire led out from the lower end of a capillary.
(従来の技術〉
半導体チップと、この半導体チップが搭載されたリード
フレームのような基板の電極を接続するワイヤボンダは
、スプールに巻回された極細の金線のようなワイヤを、
クランパーによりクランプしてキャピラリに挿通しなが
ら、このワイヤをキャピラリの下端部から導出し、ワイ
ヤの下端部に電極部を接近させて、電気的スパークによ
り、溶融ボールを形成したうえで、このワイヤにより半
導体チップと基板の電極を接続するようになっている。(Prior art) A wire bonder that connects a semiconductor chip to an electrode on a board such as a lead frame on which the semiconductor chip is mounted uses a wire like an ultra-thin gold wire wound around a spool.
While clamping the wire with a clamper and inserting it into the capillary, the wire is led out from the lower end of the capillary, the electrode is brought close to the lower end of the wire, an electric spark forms a molten ball, and then the wire is inserted into the capillary. It connects the semiconductor chip and the electrodes of the substrate.
このようなワイヤボンディング手段において、特公平1
−47893号公報に示されるように、キャピラリを半
導体チップ上に下降させて、ワイヤの下端部を半導体チ
ップにボンディングした後、キャピラリを垂直方向に上
昇させ、次いでループ形成方向と反対方向に移動させた
後、ループ形成方向に移動させて、ワイヤを基板の電極
に接続することが提案されている。In such wire bonding means,
As shown in Japanese Patent No. 47893, the capillary is lowered onto the semiconductor chip to bond the lower end of the wire to the semiconductor chip, and then the capillary is raised vertically and then moved in the opposite direction to the loop forming direction. It has been proposed to connect the wire to the electrode of the substrate by moving it in the direction of loop formation.
(発明が解決しようとする課8)
上記従来手段は、ループの高さを充分高くして、ループ
形状を良好にできる利点があるものの、キャピラリを垂
直に上昇させ、次いでループ形成方向と反対方向に一旦
移動させた後に、ループ形成方向に移動させるため、キ
ャピラリの軌跡が複雑であり、また移動ストロークもか
なり長大化することから、作業能率が低下する問題があ
った。(Issue 8 to be solved by the invention) Although the above conventional means has the advantage of making the loop height sufficiently high and improving the loop shape, the capillary is raised vertically and then in the opposite direction to the loop forming direction. Since the capillary is first moved in the direction of loop formation and then moved in the loop forming direction, the locus of the capillary is complicated and the movement stroke is also quite long, resulting in a problem of reduced work efficiency.
そこで本発明は、上記従来手段の問題を解消できるワイ
ヤボンディング方法を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wire bonding method that can solve the problems of the conventional methods described above.
(課題を解決するための手段)
このために本発明は、スプールに巻回されたワイヤをキ
ャピラリの下端部から導出して、このワイヤにより半導
体チップと基板の電極を接続するワイヤボンディング方
法においで、上記キャピラリを上記半導体チップ上に下
降させて、ワイヤの下端部をこの半導体チップにボンデ
ィングした後、このキャピラリをループ形成力向と反対
方向に円曲状に上昇させ、次いでループ形成方向に移動
させて、ワイヤを基板の電極にボンディングするように
したものである。(Means for Solving the Problems) For this purpose, the present invention provides a wire bonding method in which a wire wound around a spool is led out from the lower end of a capillary, and this wire connects a semiconductor chip and an electrode on a substrate. , the capillary is lowered onto the semiconductor chip to bond the lower end of the wire to the semiconductor chip, and then the capillary is raised in a circular shape in a direction opposite to the direction of the loop-forming force, and then moved in the direction of the loop-forming force. Then, the wire is bonded to the electrode of the substrate.
(作用)
上記構成において、ワイヤの下端部を半導体チップにボ
ンディングしたキャピラリは、ループ形成方向と反対方
向に円曲状に上昇し、次いでループ形成方向に移動して
、ワイヤを基板の電極にボンディングすることから、ワ
イヤの基端部は半導体チップから実質的に垂直に立ち上
り、充分な高さを有する形状の良好なループを作業性よ
く形成することができる。(Function) In the above configuration, the capillary with the lower end of the wire bonded to the semiconductor chip rises in a circular shape in the opposite direction to the loop formation direction, and then moves in the loop formation direction to bond the wire to the electrode of the substrate. Therefore, the base end of the wire rises substantially perpendicularly from the semiconductor chip, and a well-shaped loop having sufficient height can be formed with good workability.
(実施例) 次に、図面を参照しながら本発明の詳細な説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.
第1図はワイヤボンダのヘット部Aを示すものであって
、1はヘッド部への主体となるフレームであり、このフ
レーム1に、以下に述べる種々の部材や部品が一体的に
組み付けられている。2はこのフレーム1に軸着された
スプールであり、金線のような極細のワイヤ3が巻回さ
れている。4はモーフであり、スプール2を回転させて
ワイヤ3を導出する。その際、ワイヤ3がよしれないよ
うに、ワイヤ3はスプール2の接線方向Nに導出される
。Fig. 1 shows the head part A of the wire bonder, and 1 is a frame that is the main component to the head part, and various members and parts described below are integrally assembled to this frame 1. . A spool 2 is pivotally attached to the frame 1, and a very thin wire 3 such as a gold wire is wound around the spool. 4 is a morph, which rotates the spool 2 and draws out the wire 3. At this time, the wire 3 is led out in the tangential direction N of the spool 2 so that the wire 3 is not twisted.
5はフレーム1の下方に装着されたテンションクランパ
ー 6はこのテンションクランパー5の下方に設けられ
たカットクランパーであって、それぞれ絶縁材7を介し
て、フレーム1に取り付けられている。8.9はクラン
パー5゜6に装着されたパッドであり、このパッド8゜
9を開閉させてワイヤ3をクランプする。5 is a tension clamper installed below the frame 1; 6 is a cut clamper installed below the tension clamper 5, and each is attached to the frame 1 via an insulating material 7. Reference numeral 8.9 denotes a pad attached to the clamper 5.degree. 6, and the wire 3 is clamped by opening and closing this pad 8.9.
11はカットクランパー6の下方に設けられた長筒状の
キャピラリであって、フレーム1から突出するホーン1
2の先端部に保持されている。16はトーチ電極であっ
て、キャピラリ11から導出するワイヤ3の下端部に接
近し、電気的スパークによりワイヤ3の下端部に溶融ボ
ール17を形成する。13はフレーム1の上部に装着さ
れたカメラ、18はその鏡筒であり、キャピラリ11の
下方のボンディング地点を観察する。14はリードフレ
ームのような基板、15は基板14に搭載された半導体
チップであり、後に詳述するように、基板14の電極と
半導体チップ15の電極は、ワイヤ3により接続される
。Reference numeral 11 denotes a long cylindrical capillary provided below the cut clamper 6, and a horn 1 protruding from the frame 1.
It is held at the tip of 2. A torch electrode 16 approaches the lower end of the wire 3 leading out from the capillary 11 and forms a molten ball 17 at the lower end of the wire 3 by an electric spark. 13 is a camera mounted on the upper part of the frame 1, and 18 is its lens barrel, which observes the bonding point below the capillary 11. 14 is a substrate such as a lead frame, and 15 is a semiconductor chip mounted on the substrate 14. As will be described in detail later, the electrodes of the substrate 14 and the electrodes of the semiconductor chip 15 are connected by wires 3.
21はスプール2とテンションクランパー5の間に設け
られたエア吹出部、20は図示しない送気装置からこの
エア吹出部21にエアを送るチューブ、22.22はエ
ア吹出部21に立設されたワイヤ3のガイドである。こ
のエア吹出部21は、エアをワイヤ3に吹付びることに
より、ワイヤ3に所望のテンションを加える。21 is an air blowing section provided between the spool 2 and the tension clamper 5; 20 is a tube for sending air from an air supply device (not shown) to the air blowing section 21; and 22 and 22 are provided upright on the air blowing section 21. This is a guide for the wire 3. The air blowing section 21 applies desired tension to the wire 3 by blowing air onto the wire 3.
本装置は上記のような構成より成り、次に第2図を参照
しながら動作の説明を行う。This apparatus has the above-mentioned configuration, and its operation will be explained next with reference to FIG.
当初、ヘッド部Aは基板14の上方位置にあり、この位
置で、キャピラリ11から導出するワイヤ3の下端部に
トーチ電極16を接近させ、このトーチ電極16に高電
圧を印加して、ワイヤ3の下端部に溶融ボール17を形
成する(第2図(a))。Initially, the head part A is located above the substrate 14, and at this position, the torch electrode 16 is brought close to the lower end of the wire 3 led out from the capillary 11, a high voltage is applied to the torch electrode 16, and the wire 3 is A molten ball 17 is formed at the lower end (FIG. 2(a)).
次いでキャピラリ11を下降させ、ボールエフを半導体
チップ15上の電極に着地させてボンディングする(同
図(b))。このとき、ホーン12に図示しないUS発
振器から超音波を伝達して、ボール17のボンディング
を促進する。Next, the capillary 11 is lowered, and the ball-F lands on the electrode on the semiconductor chip 15 for bonding (FIG. 2(b)). At this time, ultrasonic waves are transmitted from a US oscillator (not shown) to the horn 12 to promote bonding of the ball 17.
次いでキャピラリ11をループ形成方向と反対方向(矢
印Nl)に円曲状に上昇させ(同図(C))、次いでル
ープ形成方向(矢印N2)にアーチ状に移動させ、キャ
ピラリ11によりワイヤ3を基板14に押し付けて基板
14の電極にボンディングしく同図(d)) 、次いで
カットクランパー6によりワイヤ3をクランプしてワイ
ヤ3を引き上げることにより、ワイヤ3をボンディング
点からカントしたうえで、キャピラリ11を上昇させる
(同図(e))。Next, the capillary 11 is raised in a circular shape in the direction opposite to the loop forming direction (arrow Nl) (see figure (C)), and then moved in an arch shape in the loop forming direction (arrow N2), and the wire 3 is The wire 3 is pressed against the substrate 14 and bonded to the electrode of the substrate 14 (FIG. 1(d)), and then the wire 3 is canted from the bonding point by being clamped and pulled up by the cut clamper 6, and then the wire 3 is canted from the bonding point, and then the capillary 11 is ((e) in the same figure).
以上のようにして、半導体チップ15と基板14はワイ
ヤ3により接続されるが、上記のようにキャピラリ11
をループ形成方向と反対方向N1に円曲状に上昇させれ
ば、ワイヤ3にループ形成方向と反対方向のテンション
を加えながら、充分な高さを有する形状が良好なループ
を形成することができ、しかも上記従来手段よりもキャ
ピラリ11の移動ストロークを短縮して、作業能率よく
ワイヤボンディングできる。As described above, the semiconductor chip 15 and the substrate 14 are connected by the wire 3, but as described above, the capillary 11
If the wire 3 is raised in a circular shape in the direction N1 opposite to the loop formation direction, it is possible to form a loop having a sufficient height and a good shape while applying tension to the wire 3 in the direction opposite to the loop formation direction. Moreover, the movement stroke of the capillary 11 is shorter than that of the conventional means, and wire bonding can be performed with high work efficiency.
殊にボンディング点における鉛直線Mの接線方向となる
ようにキャピラリ11を円曲状に上昇させれば、ワイヤ
3の立ち上り部3aを実質的に垂直にして、半導体チッ
プ15上の電極からワイヤ3が取りはずれるのを防止し
、ワイヤ3を半導体チップ15にしっかりとボンディン
グできる。In particular, if the capillary 11 is raised in a circular shape so as to be tangential to the vertical line M at the bonding point, the rising portion 3a of the wire 3 will be made substantially vertical, and the wire 3 will be raised from the electrode on the semiconductor chip 15. This prevents the wire from coming off and allows the wire 3 to be securely bonded to the semiconductor chip 15.
(発明の効果)
以上説明したように本発明は、スプールに巻回されたワ
イヤをキャピラリの下端部から導出して、このワイヤに
より半導体チップと基板の電極を接続するワイヤボンデ
ィング方法において、
上記キャピラリを上記半導体チップ上に下降させて、ワ
イヤの下端部をこの半導体チップにボンディングした後
、このキャピラリをループ形成方向と反対方向に円曲状
に上昇させ、次いでループ形成方向に移動させて、ワイ
ヤを!+&の電極にボンディングするようにしているの
で、充分な高さを有する形状の良好なワイヤのループを
形成しながらワイヤボンディングでき、しかもキャピラ
リの移動ストロークを短縮できるので作業能率が上り、
更には半導体チップにボンディングされるワイヤの立ち
上り部を実質的に垂直にして、ワイヤを半導体チップに
しっかりとボンディングすることができる。(Effects of the Invention) As explained above, the present invention provides a wire bonding method in which a wire wound around a spool is led out from the lower end of a capillary, and this wire connects a semiconductor chip and an electrode of a substrate. is lowered onto the semiconductor chip to bond the lower end of the wire to the semiconductor chip, the capillary is raised in a circular shape in the opposite direction to the loop formation direction, and then moved in the loop formation direction to bond the wire to the semiconductor chip. of! Since bonding is done to the +& electrodes, wire bonding can be performed while forming a well-shaped wire loop with sufficient height, and the moving stroke of the capillary can be shortened, increasing work efficiency.
Furthermore, by making the rising portion of the wire bonded to the semiconductor chip substantially vertical, the wire can be firmly bonded to the semiconductor chip.
図は本発明の実施例を示すものであって、第】図はワイ
ヤボンダのヘッド部の側面図、第2図(a)、 (b)
、 (c)、 (d)、 (e)はボンディング作業中
の要部正面図である。
2・・・スプール
3・・・ワイヤ
11・・・キャピラリ
14・・・基板
15・・・半導体チップThe drawings show an embodiment of the present invention, in which Fig. 2 is a side view of the head portion of the wire bonder, Fig. 2(a) and Fig. 2(b).
, (c), (d), and (e) are front views of main parts during bonding work. 2...Spool 3...Wire 11...Capillary 14...Substrate 15...Semiconductor chip
Claims (1)
導出して、このワイヤにより半導体チップと基板の電極
を接続するワイヤボンディング方法において、 上記キャピラリを上記半導体チップ上に下降させて、ワ
イヤの下端部をこの半導体チップにボンディングした後
、このキャピラリをループ形成方向と反対方向に円曲状
に上昇させ、次いでループ形成方向に移動させて、ワイ
ヤを基板の電極にボンディングするようにしたことを特
徴とするワイヤボンディング方法。[Claims] A wire bonding method in which a wire wound around a spool is led out from the lower end of a capillary, and the wire is used to connect a semiconductor chip to an electrode on a substrate, wherein the capillary is lowered onto the semiconductor chip. After bonding the lower end of the wire to the semiconductor chip, the capillary is raised in a circular shape in the opposite direction to the loop formation direction, and then moved in the loop formation direction to bond the wire to the electrode of the substrate. A wire bonding method characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2063230A JP2586679B2 (en) | 1990-03-14 | 1990-03-14 | Wire bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2063230A JP2586679B2 (en) | 1990-03-14 | 1990-03-14 | Wire bonding method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03263842A true JPH03263842A (en) | 1991-11-25 |
JP2586679B2 JP2586679B2 (en) | 1997-03-05 |
Family
ID=13223203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2063230A Expired - Lifetime JP2586679B2 (en) | 1990-03-14 | 1990-03-14 | Wire bonding method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2586679B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02310937A (en) * | 1989-05-26 | 1990-12-26 | Marine Instr Co Ltd | Wire bonding |
-
1990
- 1990-03-14 JP JP2063230A patent/JP2586679B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02310937A (en) * | 1989-05-26 | 1990-12-26 | Marine Instr Co Ltd | Wire bonding |
Also Published As
Publication number | Publication date |
---|---|
JP2586679B2 (en) | 1997-03-05 |
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