JP2733363B2 - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JP2733363B2 JP2733363B2 JP2063229A JP6322990A JP2733363B2 JP 2733363 B2 JP2733363 B2 JP 2733363B2 JP 2063229 A JP2063229 A JP 2063229A JP 6322990 A JP6322990 A JP 6322990A JP 2733363 B2 JP2733363 B2 JP 2733363B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- capillary
- clamper
- electrode
- electrode portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10162—Shape being a cuboid with a square active surface
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はワイヤボンディング方法に関し、詳しくは、
キャピラリから導出されたワイヤの下端部に形成される
溶融ボールの大きさを制御するための手段に関する。Description: TECHNICAL FIELD The present invention relates to a wire bonding method.
The present invention relates to a means for controlling the size of a molten ball formed at a lower end of a wire led out of a capillary.
（従来の技術） 半導体チップと、半導体チップが搭載されたリードフ
レームのような基板の電極を接続するワイヤボンダは、
極細の金線のようなワイヤをクランパーによりクランプ
して、キャピラリに挿通しながら、キャピラリの下端部
から導出し、このワイヤの下端部に電極部を接近させ
て、電気的スパークにより、溶融ボールを形成したうえ
で、半導体チップと基板の電極を接続するようになって
いる。(Prior art) A wire bonder that connects a semiconductor chip and an electrode of a substrate such as a lead frame on which the semiconductor chip is mounted is a wire bonder.
A fine wire such as a gold wire is clamped by a clamper and is drawn out from the lower end of the capillary while being inserted into the capillary.The electrode is approached to the lower end of the wire, and the molten ball is discharged by electric spark. After the formation, the semiconductor chip and the electrode of the substrate are connected.
ところで、このようなワイヤボンディングにあって
は、半導体チップの品種等に応じて、溶融ボールの大き
さを変えることが望ましい。すなわち、例えば半導体チ
ップの表面に形成された電極のピッチが小さい場合は、
相隣るワイヤのボンディング点同士が短絡しないように
ボール径を小さくすることが望ましく、また上記ピッチ
が大きい場合は、ボール径を大きくして、しっかりボン
ディングすることが望ましい。By the way, in such wire bonding, it is desirable to change the size of the molten ball according to the type of semiconductor chip and the like. That is, for example, when the pitch of the electrodes formed on the surface of the semiconductor chip is small,
It is desirable to reduce the ball diameter so that bonding points of adjacent wires are not short-circuited. If the pitch is large, it is desirable to increase the ball diameter and perform firm bonding.
このように溶融ボールの大きさを制御するための手段
として、特開昭62−47141号公報に示されるものが提案
されている。このものは、ボールの大きさは、電極部に
流す電流値と時間によって変ることに着眼し、ボールボ
ンド点毎に、そのボール径を作るのに必要な電流値と時
間をコンピュータに記憶させておき、このコンピュータ
により、電極部への出力を制御するようにしている。As a means for controlling the size of the molten ball as described above, one disclosed in Japanese Patent Application Laid-Open No. 62-47141 has been proposed. The focus is on the fact that the size of the ball changes depending on the value of the current flowing through the electrode and the time, and for each ball bond point, the computer stores the current value and time required to make the ball diameter. The output to the electrode section is controlled by the computer.
（発明が解決しようとする課題） ところが上記手段は、電流値と時間の２つのパラメー
タを制御するので、制御が複雑であり、また大きなボー
ルを形成する場合には、給電時間が長くなって作業能率
が低下する問題があった。(Problems to be Solved by the Invention) However, since the above-mentioned means controls two parameters of current value and time, the control is complicated, and when a large ball is formed, the power supply time becomes longer and the operation becomes longer. There was a problem of reduced efficiency.
そこで本発明は、簡単迅速に、所望大きさの溶融ボー
ルを形成することができる手段を提供することを目的と
する。Therefore, an object of the present invention is to provide a means capable of easily and quickly forming a molten ball having a desired size.
（課題を解決するための手段） このために本発明は、キャピラリに挿通されたワイヤ
をクランパーによりクランプして、このクランパーを上
下動させることにより、ワイヤをキャピラリの下端部か
ら導出し、導出されたワイヤの下端部に電極部を接近さ
せて、この電極部に電圧を印加することにより、ワイヤ
の下端部とこの電極部の間に電気的スパークを発生させ
てキャピラリから導出された部分のワイヤの一部分のみ
に溶融ボールを形成し、次いでキャピラリを下降させ
て、この溶融ボールを半導体チップにボンディングする
ようにしたワイヤボンディング方法において、上記クラ
ンパーの昇降ストロークを制御して、キャピラリの下端
部からのワイヤの導出長を調整することにより、ワイヤ
の下端部と電極部との間隔の大きさを調整し、該ワイヤ
の下端部と電極部との間隔の大きさに基づく電気的スパ
ークの強度を調整して、上記溶融ボールの大きさを制御
するようにしたものである。(Means for Solving the Problems) For this purpose, according to the present invention, a wire inserted through a capillary is clamped by a clamper, and the clamper is moved up and down so that the wire is led out from the lower end of the capillary. By bringing the electrode portion closer to the lower end of the wire and applying a voltage to this electrode portion, an electrical spark is generated between the lower end portion of the wire and the electrode portion, and the portion of the wire led out of the capillary In a wire bonding method in which a molten ball is formed only in a part of the molten ball, and then the capillary is lowered and the molten ball is bonded to a semiconductor chip, the rising and lowering stroke of the clamper is controlled so that the lower end of the capillary can be used. By adjusting the lead length of the wire, the size of the gap between the lower end of the wire and the electrode portion is adjusted, The size of the molten ball is controlled by adjusting the intensity of the electric spark based on the size of the gap between the lower end portion of the wire and the electrode portion.
（作用） 上記構成において、ワイヤの下端部と電極部の間に発
生する電気的スパークの強さは、両者の間隔の大きさに
より決定される。そこで小さなボールを形成するとき
は、ワイヤの導出長を短くして、ワイヤの下端部と電極
部との間隔を大きくし、また大きなボールを形成すると
きは、ワイヤの導出長を長くして、この間隔を小さくす
る。これにより、ワイヤの下端部に所望大きさの溶融ボ
ールを簡単に形成することができる。(Operation) In the above configuration, the intensity of the electric spark generated between the lower end portion of the wire and the electrode portion is determined by the size of the gap between the two. Therefore, when forming a small ball, shorten the lead-out length of the wire, increase the distance between the lower end of the wire and the electrode portion, and when forming a large ball, increase the lead-out length of the wire, Reduce this interval. Thereby, a molten ball having a desired size can be easily formed at the lower end of the wire.
（実施例） 次に、図面を参照しながら本発明の実施例を説明す
る。Example Next, an example of the present invention will be described with reference to the drawings.
第１図はワイヤボンダのトーチ装置の斜視図であっ
て、１は垂直なキャピラリ、４はこのキャピラリ１に挿
通されたワイヤであり、リードフレームのリードのよう
な基板の電極２の中央部に搭載された半導体チップ３へ
向って、その下端部からワイヤ４を導出する。11,12は
キャピラリ１の上方にあって、開閉動作によりワイヤ４
をクランプするテンションクランパーとカットクランパ
ーである。本実施例では、テンションクランパー11は固
定されていて昇降しないが、カットクランパー12は、カ
ム手段やリニヤモータ等の周知昇降手段により昇降す
る。FIG. 1 is a perspective view of a wire bonder torch device, wherein 1 is a vertical capillary, 4 is a wire inserted through the capillary 1, and is mounted on the center of an electrode 2 on a substrate such as a lead of a lead frame. The wire 4 is led out from the lower end of the semiconductor chip 3 toward the selected semiconductor chip 3. 11 and 12 are located above the capillary 1, and the wire 4
Tension clamper and cut clamper. In the present embodiment, the tension clamper 11 is fixed and does not move up and down. However, the cut clamper 12 moves up and down by well-known raising and lowering means such as a cam means and a linear motor.
６はキャピラリ１の側方に位置するアーム部であり、
その先端部にはヒンジ部７を介して揺動アーム８が揺動
自在に装着されており、また揺動アーム８の下端部に
は、上記キャピラリ１の下方に延出するトーチロッド９
が装着されている。Reference numeral 6 denotes an arm located on the side of the capillary 1,
A swing arm 8 is swingably attached to a tip end of the swing arm 8 via a hinge 7, and a torch rod 9 extending below the capillary 1 is provided at a lower end of the swing arm 8.
Is installed.
10は電気回路部であって、トーチロッド９に高電圧を
印加する。13は上記アーム部６の先端上部に設けられた
ソレノイドであって、このソレノイド13が作動すると、
揺動アーム８はヒンジ部７を中心に左右に揺動し、トー
チロッド９の先端の電極部9aをキャピラリ１の下端部か
ら導出したワイヤ４の直下に移動させ、またキャピラリ
１の下降動作の障害にならないように、側方に退去させ
る。Reference numeral 10 denotes an electric circuit unit which applies a high voltage to the torch rod 9. 13 is a solenoid provided at the upper end of the tip of the arm 6, and when this solenoid 13 is operated,
The swing arm 8 swings right and left around the hinge 7 to move the electrode 9 a at the tip of the torch rod 9 directly below the wire 4 led out from the lower end of the capillary 1. Evacuate laterally so as not to obstruct.
本装置は上記のような構成より成り、次に動作の説明
を行う。The present apparatus has the above configuration, and the operation will be described next.
テンションクランパー11とカットクランパー12が開閉
して、ワイヤ４をクランプしながら上下動することによ
り、キャピラリ１の下端部からワイヤ４を導出し、ワイ
ヤ４の下端部を、キャピラリ１の下方に待機する電極部
9aに接近させる。次いで電極部9aに高電圧を印加する
と、ワイヤ４の下端部と電極部9aの間に電気的スパーク
が発生し、ワイヤ４の下端部に溶融ボール14が形成され
る。次いでソレノイド13を作動させて、電極部9aを側方
へ退去させたうえで、キャピラリ１を下降させ、溶融ボ
ール14を半導体チップ３の電極にボンディングする。次
いでキャピラリ１を側方へ移動させて、ワイヤ４を電極
２にボンディングする。The tension clamper 11 and the cut clamper 12 open and close, and move up and down while clamping the wire 4 to draw out the wire 4 from the lower end of the capillary 1 and wait the lower end of the wire 4 below the capillary 1. Electrode section
Move closer to 9a. Next, when a high voltage is applied to the electrode portion 9a, an electric spark is generated between the lower end portion of the wire 4 and the electrode portion 9a, and a molten ball 14 is formed at the lower end portion of the wire 4. Next, the solenoid 13 is operated to retreat the electrode portion 9a to the side, and then the capillary 1 is lowered to bond the molten ball 14 to the electrode of the semiconductor chip 3. Next, the capillary 1 is moved to the side, and the wire 4 is bonded to the electrode 2.
ここで、ワイヤ４の下端部に形成される溶融ボール14
の大きさは、ワイヤ４の下端部と電極部9aの間に発生す
る電気的スパークの強さにより決定される。またこの電
気的スパークの強さは、ワイヤ４の下端部と電極部9aの
間隔の大きさにより決定される。そこで径の小さいボー
ル14を形成したいときは、第２図（ａ）に示すように、
ワイヤ４の導出長L1を短くし、電極部9aとの間隔D1を大
きくすることにより、弱い電気的スパークを発生させ
る。また径の大きいボール14を形成したいときは、同図
（ｂ）に示すように、ワイヤ４の導出長L2を長くし、電
極部9aとの間隔D2を小さくすることにより、強い電気的
スパークを発生させる。この導出長は、ワイヤ４をクラ
ンプして上下動するカットクランパー12の昇降ストロー
クを制御することにより、簡単に制御出来る。Here, the molten ball 14 formed at the lower end of the wire 4
Is determined by the intensity of the electric spark generated between the lower end of the wire 4 and the electrode 9a. The strength of the electric spark is determined by the distance between the lower end of the wire 4 and the electrode 9a. Therefore, when it is desired to form a ball 14 having a small diameter, as shown in FIG.
A weak electric spark is generated by shortening the lead length L1 of the wire 4 and increasing the distance D1 between the wire 4 and the electrode portion 9a. When it is desired to form a ball 14 having a large diameter, as shown in FIG. 3B, the lead length L2 of the wire 4 is increased and the distance D2 between the wire 4 and the electrode portion 9a is reduced, so that a strong electric spark is generated. generate. This lead-out length can be easily controlled by controlling the vertical stroke of the cut clamper 12 that moves up and down by clamping the wire 4.
（発明の効果） 以上説明したように本発明は、キャピラリに挿通され
たワイヤをクランパーによりクランプして、このクラン
パーを上下動させることにより、ワイヤをキャピラリの
下端部から導出し、導出されたワイヤの下端部に電極部
を接近させて、この電極部に電圧を印加することによ
り、ワイヤの下端部とこの電極部の間に電気的スパーク
を発生させてキャピラリから導出された部分のワイヤの
一部分のみに溶融ボールを形成し、次いでキャピラリを
下降させて、この溶融ボールを半導体チップにボンディ
ングするようにしたワイヤボンディング方法において、
上記クランパーの昇降ストロークを制御して、キャピラ
リの下端部からのワイヤの導出長を調整することによ
り、ワイヤの下端部と電極部との間隔の大きさを調整
し、該ワイヤの下端部と電極部との間隔の大きさに基づ
く電気的スパークの強度を調整して、上記溶融ボールの
大きさを制御するようにしているので、簡単かつ迅速に
所望大きさの溶融ボールを形成することができる。(Effects of the Invention) As described above, the present invention clamps a wire inserted in a capillary by a clamper and moves the clamper up and down to derive the wire from the lower end portion of the capillary and to derive the derived wire A part of the wire that is drawn out of the capillary by causing the electrode to approach the lower end of the wire and applying a voltage to this electrode to generate an electrical spark between the lower end of the wire and this electrode Only in a wire bonding method in which a molten ball is formed and then the capillary is lowered to bond the molten ball to a semiconductor chip,
The distance between the lower end of the wire and the electrode section is adjusted by controlling the lifting stroke of the clamper and adjusting the length of the wire drawn out from the lower end of the capillary. Since the size of the molten ball is controlled by adjusting the intensity of the electric spark based on the size of the gap with the part, a molten ball of a desired size can be formed easily and quickly. .
図は本発明の実施例を示すものであって、第１図はワイ
ヤボンダのトーチ装置の斜視図、第２図（ａ），（ｂ）
は作業中の要部正面図である。 １……キャピラリ ２……電極 ３……半導体チップ ４……ワイヤ 9a……電極部 11,12……クランパー 14……溶融ボール L1,L2……導出長FIG. 1 shows an embodiment of the present invention. FIG. 1 is a perspective view of a torch device of a wire bonder, and FIGS. 2 (a) and 2 (b).
FIG. 4 is a front view of a main part during operation. 1 Capillary 2 Electrode 3 Semiconductor chip 4 Wire 9a Electrode section 11, 12 Clamper 14 Melting ball L1, L2 Derived length
フロントページの続き (72)発明者 森 政義 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭62−126644（ＪＰ，Ａ)Continued on the front page (72) Inventor Masayoshi Mori 1006 Kazuma Kadoma, Kadoma City, Osaka Inside Matsushita Electric Industrial Co., Ltd. (56) References JP-A-62-126644 (JP, A)
Claims (1)
ーによりクランプして、このクランパーを上下動させる
ことにより、ワイヤをキャピラリの下端部から導出し、
導出されたワイヤの下端部に電極部を接近させて、この
電極部に電圧を印加することにより、ワイヤの下端部と
この電極部の間に電気的スパークを発生させてキャピラ
リから導出された部分のワイヤの一部分のみに溶融ボー
ルを形成し、次いでキャピラリを下降させて、この溶融
ボールを半導体チップにボンディングするようにしたワ
イヤボンディング方法において、 上記クランパーの昇降ストロークを制御して、キャピラ
リの下端部からのワイヤの導出長を調整することによ
り、ワイヤの下端部と電極部との間隔の大きさを調整
し、該ワイヤの下端部と電極部との間隔の大きさに基づ
く電気的スパークの強度を調整して、上記溶融ボールの
大きさを制御するようにしたことを特徴とするワイヤボ
ンディング方法。1. A wire inserted through a capillary is clamped by a clamper and the clamper is moved up and down so that the wire is drawn out from a lower end of the capillary.
By bringing the electrode portion closer to the lower end of the derived wire and applying a voltage to this electrode portion, an electric spark is generated between the lower end of the wire and this electrode portion, and the portion derived from the capillary. In a wire bonding method in which a molten ball is formed only on a part of the wire, and then the capillary is lowered and the molten ball is bonded to a semiconductor chip, the up-and-down stroke of the clamper is controlled, and the lower end of the capillary is controlled. The distance between the lower end of the wire and the electrode portion is adjusted by adjusting the length of the lead wire from the wire, and the strength of the electric spark based on the size of the interval between the lower end of the wire and the electrode portion is adjusted. Wherein the size of the molten ball is controlled by adjusting the size of the molten ball.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2063229A JP2733363B2 (en) | 1990-03-14 | 1990-03-14 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2063229A JP2733363B2 (en) | 1990-03-14 | 1990-03-14 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03263843A JPH03263843A (en) | 1991-11-25 |
| JP2733363B2 true JP2733363B2 (en) | 1998-03-30 |
Family
ID=13223173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2063229A Expired - Fee Related JP2733363B2 (en) | 1990-03-14 | 1990-03-14 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2733363B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62126644A (en) * | 1985-11-28 | 1987-06-08 | Toshiba Corp | Wire bonding method |
-
1990
- 1990-03-14 JP JP2063229A patent/JP2733363B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03263843A (en) | 1991-11-25 |
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