JPH02310937A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPH02310937A JPH02310937A JP1131276A JP13127689A JPH02310937A JP H02310937 A JPH02310937 A JP H02310937A JP 1131276 A JP1131276 A JP 1131276A JP 13127689 A JP13127689 A JP 13127689A JP H02310937 A JPH02310937 A JP H02310937A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- point
- bonding point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000000630 rising effect Effects 0.000 claims description 17
- 238000013459 approach Methods 0.000 abstract description 2
- 238000005452 bending Methods 0.000 description 9
- 238000007665 sagging Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000037303 wrinkles Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
- H01L2224/8218—Translational movements
- H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体デバイスの組立工程において、第１ボ
ンディング点例えばＩＣチップ上の電極と第２ボンディ
ング点例えば外部リードとの間にワイヤをループ状に架
は渡して電気的に接続するワイヤボンディング方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention provides a method for looping a wire between a first bonding point, such as an electrode on an IC chip, and a second bonding point, such as an external lead, in the assembly process of a semiconductor device. This relates to a wire bonding method in which electrical connections are made by passing a frame over the wire.
従来、架は渡すときにワイヤを的確に、ループ形状に賦
形せしめるために種々の工夫がなされているが、手中ピ
ラリの軌跡を第４図に示すように、第１ボンディング点
２のボンディング終了後キャピラリを少し上昇させ続い
て第２ボンディング点３と反対の方向に僅かに移動させ
ることによりワイヤｌのループ形状の頂部４となるべき
付近に折曲くせをつけ、次いでキャピラリを所定の高さ
まで上昇させ、曲線軌道と垂直下降軌道をもって第２ボ
ンディング点３へ移動させて第２ボンディングを行うこ
とが提案されている（特開昭６３−４２１３５号公報参
照）。Conventionally, various devices have been devised to form the wire into a loop shape accurately when passing the frame. Raise the rear capillary a little and then move it slightly in the direction opposite to the second bonding point 3 to make a bend near the top 4 of the loop shape of the wire l, and then raise the capillary to a predetermined height. It has been proposed to perform second bonding by raising the wire and moving it along a curved trajectory and a vertically descending trajectory to the second bonding point 3 (see Japanese Unexamined Patent Publication No. 63-42135).
しかしながら、この方法の前半部の折曲くせつけ方法は
、第５図（ループ形成後の状態で示している）に示すよ
うにワイヤ立ち上り基部５に皺６や亀！２７などの損傷
を与え易く、ワイヤボンディングにおける借問性に大き
な影響を及ぼす。However, the bending method in the first half of this method does not create wrinkles 6 or curves in the rising wire base 5, as shown in FIG. 5 (shown in the state after the loop has been formed). 27, etc., and has a great influence on the stability in wire bonding.
また、上昇移動と水平後退移動をそれぞれ単独に行うた
め所要時間の増大を招き、半導体デバイス組立工程にお
ける生産性の向上の妨げになる。Furthermore, since the upward movement and the horizontal backward movement are each performed independently, the required time increases, which hinders the improvement of productivity in the semiconductor device assembly process.
さらにこの方法の後半部の第２ボンディング点３への移
動に垂直下降軌道を用いるため垂直に下降し始めるＡ点
で第６図に示すようにキャピラリ８先端の近傍に大きな
ワイヤの垂れ９が発生し、キャピラリ８が第２ボンディ
ング点に到達した時点には第７図に示すように第２ボン
ディング点３の近傍に実測で０．３５〜０．４鶴程度の
平坦な領域が形成されることがわかった。この場合ワイ
ヤの垂れ９が、第２ボンディング点３例えば外部リード
の表面に乗らないと、第１ボンディング点２と第２ボン
ディング点３との間に接続されたワイヤ１にボンディン
グ不良となるループの垂れや曲がりが発生しやすくなる
。この傾向は、外部リードの幅が狭いリードフレームを
用いた多ビンの半導体デバイスのワイヤボンディングに
おいて著しい。Furthermore, since a vertically descending trajectory is used to move to the second bonding point 3 in the second half of this method, a large wire sagging 9 occurs near the tip of the capillary 8 at point A, which begins to descend vertically, as shown in Figure 6. However, when the capillary 8 reaches the second bonding point, a flat area of about 0.35 to 0.4 mm is actually formed near the second bonding point 3, as shown in FIG. I understand. In this case, if the sag 9 of the wire does not get on the surface of the second bonding point 3, for example, the external lead, the loop will cause a bonding failure to the wire 1 connected between the first bonding point 2 and the second bonding point 3. Sagging and bending are more likely to occur. This tendency is remarkable in wire bonding of multi-bin semiconductor devices using lead frames with narrow external leads.
本発明は上述の従来の問題点を解決しようとするもので
、ワイヤ立ち上り基部の皺や亀裂などの損傷を軽減する
とともに、所要時間をできるだけ短縮し、しかもワイヤ
の垂れや曲がりを軽減することが可能なワイヤボンディ
ング方法を提供することを目的とするものである。The present invention is an attempt to solve the above-mentioned conventional problems, and it is possible to reduce damage such as wrinkles and cracks at the base of the wire riser, to shorten the required time as much as possible, and to reduce sagging and bending of the wire. The purpose of this invention is to provide a possible wire bonding method.
（課題を解決するための手段〕
本発明は、第１ボンディング点と第２ボンディング点と
の間をワイヤで接続するワイヤボンディング方法におい
て、第１ボンディング終了後、キャピラリを上昇させな
がら第２ボンディング点と反対の方向に移動させてワイ
ヤ立ち上り部を繰り出し、次いでキャピラリを所定の位
置へ上昇させて所定量のワイヤをさらに繰り出し、その
後キャピラリを前記上昇点と第２ボンディング点とを結
ぶ曲線軌道又は直線軌道をもって第２ボンディング点へ
移動させ、第２ボンディングを行うことを特徴とするワ
イヤボンディング方法である。(Means for Solving the Problems) The present invention provides a wire bonding method for connecting a first bonding point and a second bonding point with a wire. The capillary is then moved in the opposite direction to pay out the rising portion of the wire, and then the capillary is raised to a predetermined position to further pay out a predetermined amount of wire, and then the capillary is moved on a curved trajectory or a straight line connecting the rising point and the second bonding point. This wire bonding method is characterized in that the wire is moved along a trajectory to a second bonding point and second bonding is performed.
本発明は、第１ボンディング終了後、キャピラリを上昇
させながら第２ボンディング点と反対の方向に移動させ
て、即ち、例えば曲線軌道や直線軌道をもって、ワイヤ
立ち上り部（ループを形成したときに第１ボンディング
点上でほぼ垂直に立ち上る部分）を操り出すので、ワイ
ヤに無理な力が加わることなくワイヤ立ち上り部上端部
（キャピラリの下端に位置するワイヤの部分）に折曲（
せかつき、ワイヤ立ち上り基部に皺や亀裂などの損傷が
生じにクク、また折曲くせつけのための所要時間を従来
のものよりも短縮することができる。In the present invention, after the first bonding is completed, the capillary is raised and moved in the opposite direction to the second bonding point, that is, for example, on a curved trajectory or a straight trajectory, when the wire rises (when forming a loop), The part that rises almost vertically above the bonding point) can be bent (the part of the wire located at the bottom end of the capillary) at the upper end of the rising part of the wire (the part of the wire located at the bottom end of the capillary) without applying excessive force to the wire.
This reduces the risk of damage such as wrinkles and cracks on the rising base of the wire, and the time required for bending and shaping can be reduced compared to conventional methods.
また、本発明はさらに上昇点まで移動して所定量のワイ
ヤを繰り出しているキャピラリを前記上昇点と第２ボン
ディング点とを結ぶ曲線軌道又は斜め直線軌道をもって
第２ボンディング点へ移動させ、第２ボンディングを行
うので、キャピラリ先端の近傍に発生するワイヤの垂れ
が軽減され、第２ボンディング点の近傍に形成されるワ
イヤの平坦な領域が短くなる。これは第７図に示したよ
うに実測０．３５〜０．４鶴の平坦領域を生じたときと
同じ条件でキャピラリの軌跡を変えて実験したときに第
３図のように０．１〜０．２ｆｉの平坦領域しか生じな
かったことから確認された。従って、ボンディング不良
となるループの垂れや曲がりが軽減される。Moreover, the present invention further moves the capillary, which has moved to the rising point and fed out a predetermined amount of wire, to the second bonding point on a curved trajectory or an oblique straight trajectory connecting the rising point and the second bonding point. Since bonding is performed, the sagging of the wire near the capillary tip is reduced, and the flat region of the wire formed near the second bonding point is shortened. As shown in Fig. 7, when the experiment was performed by changing the capillary trajectory under the same conditions as when the flat region of 0.35 - 0.4 was produced, it was found to be 0.1 - 0.4 as shown in Fig. 3. This was confirmed because only a flat area of 0.2 fi was generated. Therefore, sagging and bending of the loop, which may lead to defective bonding, is reduced.
本発明の実施例を第１〜３図を用いて説明する。 Embodiments of the present invention will be described using FIGS. 1 to 3.
第１図はキャピラリ８の軌跡を示している。この例では
折曲くせつけのための前半部移動を略放物線状の曲線軌
道としであるが、破線で示すように直線軌道であっても
よいし、一部を曲線軌道とし、残部を斜め直線軌道とし
てもよい、いずれにしてもキャピラリ８に上昇動と第２
ボンディング点３と反対の方向への水平方向移動とを併
合して同時に行わしめ、ワイヤ１に無理な力が加わらな
い軌跡でワイヤ立ち上り部を繰り出す、なお、この第１
図に示した軌跡で折曲くせをつけると、第４図の従来例
の折曲くせつけに要した時間よりも１５ｍ５程度短い時
間しかかからなかった。FIG. 1 shows the trajectory of the capillary 8. In this example, the movement of the front half for bending is performed on a substantially parabolic curved trajectory, but it may also be a straight trajectory as shown by the broken line, or a part may be a curved trajectory and the rest may be a diagonal straight line. It may be an orbit, but in any case, the capillary 8 has an upward motion and a second
The bonding point 3 and the horizontal movement in the opposite direction are combined and performed at the same time, and the rising portion of the wire is fed out on a trajectory that does not apply unreasonable force to the wire 1.
When the bending pattern was formed along the trajectory shown in the figure, it took about 15 m5 shorter than the time required to form the bending pattern in the conventional example shown in FIG.
またキャピラリ８の上昇点から第２ボンディング点３ま
での移動はこの例では上昇点から第２ボンディング点３
．を結ぶ略放物線状の曲線軌道としであるが、破線で示
すように直線軌道であってもよいし、一部を曲線軌道と
し、残部を直線軌道としてもよい、いずれにしても垂直
下降軌道を用いないことが肝要と実験の結果判断される
。垂直下降軌道を用いなければキャピラリ８が第２ボン
ディング点３に接近した第２図の状態で従来の第６図に
示したような大きなワイヤの垂れ９は発生せず、キャピ
ラリ８が第２ボンディング点３に到達した第３図の状態
での平坦領域も実測０．１〜０．２鶴であった。In addition, the movement of the capillary 8 from the rising point to the second bonding point 3 is, in this example, from the rising point to the second bonding point 3.
．． It is a nearly parabolic curved trajectory connecting the two, but it may be a straight trajectory as shown by the broken line, or a part may be a curved trajectory and the rest may be a straight trajectory.In any case, it is a vertical descending trajectory. As a result of experiments, it has been determined that it is important not to use it. If the vertical descending trajectory is not used, the large wire sagging 9 as shown in the conventional method shown in FIG. 6 will not occur in the state shown in FIG. The flat area in the state shown in FIG. 3 when point 3 was reached was also actually measured to be 0.1 to 0.2.
このようにしてキャピラリ８を移動させて第２ボンディ
ングを行うと繰り出されたワイヤｌは折曲くせをつけた
ループ形状の頂部４で確実に曲がって第１図に２点鎖線
で示したような的確なループ形状に賦形されて第１ボン
ディング点２と第２ボンディング点３との間に架は渡さ
れる。When the capillary 8 is moved in this way and the second bonding is performed, the wire l that is fed out is bent securely at the bent loop-shaped top 4, as shown by the two-dot chain line in FIG. The frame is shaped into a precise loop shape and passed between the first bonding point 2 and the second bonding point 3.
本発明のワイヤボンディング方法は、第１ボンディング
終了後、キャピラリを上昇させながら第２ボンディング
点と反対の方向に移動させてワイヤ立ち上り部を繰り出
し、次いでキャピラリを所定の位置へ上昇させて所定量
のワイヤをさらに繰り出し、その後キャピラリを前記上
昇点と第２ボンディング点とを結ぶ曲線軌道又は直線軌
道をもって第２ボンディング点へ移動させ、第２ボンデ
ィングを行うので、第１ボンディング点に接続されたワ
イヤの立ち上り基部に発生し易い皺や亀裂などの損傷を
少な（することができ、また、ワイヤに折曲くせをつけ
るのに要する時間を従来のものより短縮することができ
、さらに第２ボンディング点の近傍のワイヤの平坦な領
域が従来では例えば０．３５〜０．４鶴生じていたもの
をＯ，１〜０．２論程度に軽減できるため、外部リード
の幅が狭いリードフレームを用いた多ピンの半導体デバ
イスのワイヤボンディングにおいても、ボンディング不
良となるループの垂れや曲がりが発生しない。In the wire bonding method of the present invention, after the first bonding is completed, the capillary is raised and moved in the opposite direction to the second bonding point to let out the rising portion of the wire, and then the capillary is raised to a predetermined position to deposit a predetermined amount of wire. The wire is further fed out, and then the capillary is moved to the second bonding point along a curved trajectory or a straight trajectory connecting the rising point and the second bonding point to perform the second bonding, so that the wire connected to the first bonding point is Damage such as wrinkles and cracks that tend to occur at the rising base can be reduced, and the time required to bend the wire can be shortened compared to conventional methods. The flat area of the nearby wire can be reduced from 0.35 to 0.4 mm in the conventional case to about 0.1 to 0.2 mm, making it possible to reduce the flat area of the nearby wire to about 0.1 to 0.2 mm. Even in wire bonding of semiconductor devices with pins, sagging or bending of the loop, which causes poor bonding, does not occur.
第１〜３図は本発明方法の実施例を示し、第１図はキャ
ピラリの軌跡を示す説明図、第２図はキャピラリ８が第
２ボンディング点３に接近したときのワイヤ１の状態を
示す説明図、第３図はキャピラリ８が第２ボンディング
点３に到達したときのワイヤ１のａ′態を示１す説明図
である。
第４〜７図は従来方法を示し、第４図はキャピラリの軌
跡を示す説明図、第５図は立ち上り基部５の損傷を示す
説明図１、第６図はキャピラリ８が第２ボンディング点
３の直上部まで下降したときの（キャピラリ８の高さは
第２図と同じにしである）ワイヤの垂れ９を示す説明図
、第７図はキャピラリ８が第２ボンディング点３に到達
したときのワイヤ１の状態を示す説明図である。
ｌ・・・ワイヤ、２・・・第１ボンディング点、３・・
・第２ボンディング点、４・・・ループ形状の頂部、５
・・・ワイヤ立ち上り基部、６・・・皺、７・・・亀裂
、８・・・キャピラリ、９・・・ワイヤの垂れ。1 to 3 show an embodiment of the method of the present invention, FIG. 1 is an explanatory diagram showing the trajectory of the capillary, and FIG. 2 shows the state of the wire 1 when the capillary 8 approaches the second bonding point 3. FIG. 3 is an explanatory diagram showing the a' state of the wire 1 when the capillary 8 reaches the second bonding point 3. 4 to 7 show the conventional method, FIG. 4 is an explanatory diagram showing the trajectory of the capillary, FIG. 5 is an explanatory diagram 1 showing damage to the rising base 5, and FIG. (The height of the capillary 8 is the same as in Fig. 2) When the wire sag 9 is lowered to just above the capillary 8 (the height of the capillary 8 is the same as that in Fig. 2). FIG. 2 is an explanatory diagram showing the state of the wire 1. FIG. l...wire, 2...first bonding point, 3...
・Second bonding point, 4...Top of loop shape, 5
... wire rising base, 6 ... wrinkles, 7 ... cracks, 8 ... capillary, 9 ... wire hanging.
Claims (1)
をワイヤで接続するワイヤボンディング方法において、
第１ボンディング終了後、キャピラリを上昇させながら
第２ボンディング点と反対の方向に移動させてワイヤ立
ち上り部を繰り出し、次いでキャピラリを所定の位置へ
上昇させて所定量のワイヤをさらに繰り出し、その後キ
ャピラリを前記上昇点と第２ボンディング点とを結ぶ曲
線軌道又は直線軌道をもって第２ボンディング点へ移動
させ、第２ボンディングを行うことを特徴とするワイヤ
ボンディング方法。(1) In a wire bonding method that connects a first bonding point and a second bonding point with a wire,
After the first bonding is completed, the capillary is raised and moved in the opposite direction to the second bonding point to let out the rising part of the wire, then the capillary is raised to a predetermined position and a predetermined amount of wire is further let out, and then the capillary is A wire bonding method characterized in that the second bonding is performed by moving to the second bonding point using a curved trajectory or a straight trajectory connecting the rising point and the second bonding point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13127689A JPH0695539B2 (en) | 1989-05-26 | 1989-05-26 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13127689A JPH0695539B2 (en) | 1989-05-26 | 1989-05-26 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02310937A true JPH02310937A (en) | 1990-12-26 |
| JPH0695539B2 JPH0695539B2 (en) | 1994-11-24 |
Family
ID=15054153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13127689A Expired - Lifetime JPH0695539B2 (en) | 1989-05-26 | 1989-05-26 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0695539B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03263842A (en) * | 1990-03-14 | 1991-11-25 | Matsushita Electric Ind Co Ltd | Wire bonding |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS636849A (en) * | 1986-06-26 | 1988-01-12 | Toshiba Corp | Wire bonding |
| JPS6342135A (en) * | 1986-08-08 | 1988-02-23 | Shinkawa Ltd | Wire bonding method |
| JPS63257236A (en) * | 1987-04-14 | 1988-10-25 | Mitsubishi Electric Corp | Wire bonding |
-
1989
- 1989-05-26 JP JP13127689A patent/JPH0695539B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS636849A (en) * | 1986-06-26 | 1988-01-12 | Toshiba Corp | Wire bonding |
| JPS6342135A (en) * | 1986-08-08 | 1988-02-23 | Shinkawa Ltd | Wire bonding method |
| JPS63257236A (en) * | 1987-04-14 | 1988-10-25 | Mitsubishi Electric Corp | Wire bonding |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03263842A (en) * | 1990-03-14 | 1991-11-25 | Matsushita Electric Ind Co Ltd | Wire bonding |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0695539B2 (en) | 1994-11-24 |
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