JPH0325227U - - Google Patents

Info

Publication number
JPH0325227U
JPH0325227U JP8506389U JP8506389U JPH0325227U JP H0325227 U JPH0325227 U JP H0325227U JP 8506389 U JP8506389 U JP 8506389U JP 8506389 U JP8506389 U JP 8506389U JP H0325227 U JPH0325227 U JP H0325227U
Authority
JP
Japan
Prior art keywords
reticle
reduction projection
projection exposure
chip
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8506389U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8506389U priority Critical patent/JPH0325227U/ja
Publication of JPH0325227U publication Critical patent/JPH0325227U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Projection-Type Copiers In General (AREA)
JP8506389U 1989-07-21 1989-07-21 Pending JPH0325227U (lv)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8506389U JPH0325227U (lv) 1989-07-21 1989-07-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8506389U JPH0325227U (lv) 1989-07-21 1989-07-21

Publications (1)

Publication Number Publication Date
JPH0325227U true JPH0325227U (lv) 1991-03-15

Family

ID=31633963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8506389U Pending JPH0325227U (lv) 1989-07-21 1989-07-21

Country Status (1)

Country Link
JP (1) JPH0325227U (lv)

Similar Documents

Publication Publication Date Title
US5480047A (en) Method for forming a fine resist pattern
JP2752365B2 (ja) マルチレベル・レチクル
KR0128828B1 (ko) 반도체 장치의 콘택홀 제조방법
GB1461685A (en) Method and means for forming an aligned mask that does not include alignment marks employed in aligning the mask
JP2730861B2 (ja) エネルギー節約型フォトマスク
JPH0496065A (ja) レチクル
JPH0325227U (lv)
GB9515230D0 (en) Method of manufacturing a photo mask for manufacturing a semiconductor device
US6027865A (en) Method for accurate patterning of photoresist during lithography process
JPH05243115A (ja) 半導体装置の製造方法
JPH0664337B2 (ja) 半導体集積回路用ホトマスク
GB0129775D0 (en) Exposure positioning in photolithography
JPH02262319A (ja) パターン形成方法
JPS56116625A (en) Exposure of fine pattern
JPH0322904Y2 (lv)
JPS6473616A (en) Manufacture of semiconductor device
KR960007293Y1 (ko) 스텝퍼
TW200300961A (en) Multiple photolithographic exposures with different clear patterns
KR970010568B1 (ko) 반도체 장치의 제조 방법
JPS6155106B2 (lv)
JPH0479358U (lv)
JPS6258139B2 (lv)
JPS6370425A (ja) 微細パタ−ン形成方法
KR200188671Y1 (ko) 노광빛난반사방지용포토마스크
JPS62265723A (ja) レジスト露光方法