JPH0325010B2 - - Google Patents

Info

Publication number
JPH0325010B2
JPH0325010B2 JP58182060A JP18206083A JPH0325010B2 JP H0325010 B2 JPH0325010 B2 JP H0325010B2 JP 58182060 A JP58182060 A JP 58182060A JP 18206083 A JP18206083 A JP 18206083A JP H0325010 B2 JPH0325010 B2 JP H0325010B2
Authority
JP
Japan
Prior art keywords
electron beam
wafer
marker
pattern
main field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58182060A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074619A (ja
Inventor
Hiroshi Yasuda
Takayuki Myazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58182060A priority Critical patent/JPS6074619A/ja
Publication of JPS6074619A publication Critical patent/JPS6074619A/ja
Publication of JPH0325010B2 publication Critical patent/JPH0325010B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58182060A 1983-09-30 1983-09-30 電子ビ−ム露光方法 Granted JPS6074619A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182060A JPS6074619A (ja) 1983-09-30 1983-09-30 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182060A JPS6074619A (ja) 1983-09-30 1983-09-30 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS6074619A JPS6074619A (ja) 1985-04-26
JPH0325010B2 true JPH0325010B2 (enrdf_load_stackoverflow) 1991-04-04

Family

ID=16111641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182060A Granted JPS6074619A (ja) 1983-09-30 1983-09-30 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS6074619A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233427A (ja) * 1985-08-06 1987-02-13 Fujitsu Ltd 電子ビ−ム露光方法
JPH0673344B2 (ja) * 1987-04-08 1994-09-14 株式会社日立製作所 電子線描画方法

Also Published As

Publication number Publication date
JPS6074619A (ja) 1985-04-26

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