JPH0324053B2 - - Google Patents
Info
- Publication number
- JPH0324053B2 JPH0324053B2 JP55096732A JP9673280A JPH0324053B2 JP H0324053 B2 JPH0324053 B2 JP H0324053B2 JP 55096732 A JP55096732 A JP 55096732A JP 9673280 A JP9673280 A JP 9673280A JP H0324053 B2 JPH0324053 B2 JP H0324053B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- producing
- gas
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9673280A JPS5721813A (en) | 1980-07-15 | 1980-07-15 | Forming method for film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9673280A JPS5721813A (en) | 1980-07-15 | 1980-07-15 | Forming method for film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5721813A JPS5721813A (en) | 1982-02-04 |
| JPH0324053B2 true JPH0324053B2 (enrdf_load_stackoverflow) | 1991-04-02 |
Family
ID=14172887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9673280A Granted JPS5721813A (en) | 1980-07-15 | 1980-07-15 | Forming method for film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721813A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58164220A (ja) * | 1982-03-24 | 1983-09-29 | Sanyo Electric Co Ltd | 非晶質半導体の製造方法 |
| JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
| JPH07101751B2 (ja) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | 光起電力素子の製造方法 |
| US4937550A (en) * | 1987-03-31 | 1990-06-26 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Strain sensor |
| JP2516964B2 (ja) * | 1987-03-31 | 1996-07-24 | 鐘淵化学工業株式会社 | 歪センサ− |
| JPH0810765B2 (ja) * | 1993-05-13 | 1996-01-31 | 日本電気株式会社 | 半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52140267A (en) * | 1976-05-19 | 1977-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Vapor epitaxial crystal growing device |
-
1980
- 1980-07-15 JP JP9673280A patent/JPS5721813A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5721813A (en) | 1982-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6204197B1 (en) | Semiconductor device, manufacturing method, and system | |
| US4398343A (en) | Method of making semi-amorphous semiconductor device | |
| US4461783A (en) | Non-single-crystalline semiconductor layer on a substrate and method of making same | |
| US4808553A (en) | Semiconductor device manufacturing method | |
| JPS6237527B2 (enrdf_load_stackoverflow) | ||
| US20080023070A1 (en) | Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells | |
| US7029995B2 (en) | Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy | |
| US4988642A (en) | Semiconductor device, manufacturing method, and system | |
| US4464415A (en) | Photoelectric conversion semiconductor manufacturing method | |
| JPS6043819A (ja) | 気相反応方法 | |
| JPH036652B2 (enrdf_load_stackoverflow) | ||
| JPH0324053B2 (enrdf_load_stackoverflow) | ||
| JPS5895550A (ja) | 非単結晶半導体層形成用装置 | |
| US4910044A (en) | Ultraviolet light emitting device and application thereof | |
| JPH0325929B2 (enrdf_load_stackoverflow) | ||
| JPS6243536B2 (enrdf_load_stackoverflow) | ||
| JP2626701B2 (ja) | Ｍｉｓ型電界効果半導体装置 | |
| JP2639616B2 (ja) | 半導体被膜形成方法 | |
| JPH0424432B2 (enrdf_load_stackoverflow) | ||
| JPS6236632B2 (enrdf_load_stackoverflow) | ||
| JPH0337731B2 (enrdf_load_stackoverflow) | ||
| JP2547741B2 (ja) | 堆積膜製造装置 | |
| JPS62169324A (ja) | 被膜作製方法 | |
| JPH0532473B2 (enrdf_load_stackoverflow) | ||
| JPS62169325A (ja) | 被膜作製方法 |