JPH0323897U - - Google Patents
Info
- Publication number
- JPH0323897U JPH0323897U JP8376889U JP8376889U JPH0323897U JP H0323897 U JPH0323897 U JP H0323897U JP 8376889 U JP8376889 U JP 8376889U JP 8376889 U JP8376889 U JP 8376889U JP H0323897 U JPH0323897 U JP H0323897U
- Authority
- JP
- Japan
- Prior art keywords
- word line
- memory cell
- limiter circuit
- diodes
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案によるワード線リミツタ回路を
説明する回路図、第２図は本考案に用いる接合ダ
イオードを説明する断面図、第３図は従来のワー
ド線リミツタ回路を説明する回路図である。
１……ワード線昇圧回路、２……メモリセル、
３……ワード線リミツタ回路、４……接合ダイオ
ード、５……Ｐ型シリコン基板、６……Ｎ型ウエ
ル領域、７……Ｐ＋型アノード領域、８……Ｎ＋
型カソード領域である。
Fig. 1 is a circuit diagram illustrating a word line limiter circuit according to the present invention, Fig. 2 is a cross-sectional view illustrating a junction diode used in the present invention, and Fig. 3 is a circuit diagram illustrating a conventional word line limiter circuit. . 1...Word line booster circuit, 2...Memory cell,
3...Word line limiter circuit, 4...Junction diode, 5...P type silicon substrate, 6...N type well region, 7...P + type anode region, 8...N +
type cathode region.
Claims (1)
ルと前記メモリセルに接続されたワード線と前記
ワード線の電位を書き込み時に昇圧するワード線
昇圧回路とを具備し、前記ワード線昇圧回路と前
記メモリセル間に電源Ｖｃｃからダイオードを複
数個接続したことを特徴とするワード線リミツタ
回路。 (2) 前記ダイオードの個数を最大電源Ｖｃｃ＋
２Ｖｔｎ（スレツシヨルド電位）になる様に設定
したことを特徴とする請求項１記載のワード線リ
ミツタ回路。[Claims for Utility Model Registration] (1) A memory cell having one transistor and one capacitor, a word line connected to the memory cell, and a word line booster circuit for boosting the potential of the word line during writing, A word line limiter circuit characterized in that a plurality of diodes are connected from a power supply Vcc between a word line booster circuit and the memory cell. (2) Set the number of diodes to the maximum power supply Vcc+
2. The word line limiter circuit according to claim 1, wherein the word line limiter circuit is set to 2Vtn (threshold potential).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8376889U JPH0323897U (en) | 1989-07-17 | 1989-07-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8376889U JPH0323897U (en) | 1989-07-17 | 1989-07-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0323897U true JPH0323897U (en) | 1991-03-12 |
Family
ID=31631711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8376889U Pending JPH0323897U (en) | 1989-07-17 | 1989-07-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0323897U (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61113195A (en) * | 1984-11-07 | 1986-05-31 | Hitachi Ltd | Semiconductor storage device |
| JPS63144555A (en) * | 1986-12-09 | 1988-06-16 | Toshiba Corp | Semiconductor integrated circuit |
| JPS63239673A (en) * | 1987-03-27 | 1988-10-05 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS6459100A (en) * | 1987-08-28 | 1989-03-06 | Seiko Instr & Electronics | Deflecting magnet |
| JPH01173500A (en) * | 1987-12-28 | 1989-07-10 | Toshiba Corp | Nonvolatile semiconductor memory device |
-
1989
- 1989-07-17 JP JP8376889U patent/JPH0323897U/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61113195A (en) * | 1984-11-07 | 1986-05-31 | Hitachi Ltd | Semiconductor storage device |
| JPS63144555A (en) * | 1986-12-09 | 1988-06-16 | Toshiba Corp | Semiconductor integrated circuit |
| JPS63239673A (en) * | 1987-03-27 | 1988-10-05 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS6459100A (en) * | 1987-08-28 | 1989-03-06 | Seiko Instr & Electronics | Deflecting magnet |
| JPH01173500A (en) * | 1987-12-28 | 1989-07-10 | Toshiba Corp | Nonvolatile semiconductor memory device |
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