JPS62199826U - - Google Patents

Info

Publication number
JPS62199826U
JPS62199826U JP8693586U JP8693586U JPS62199826U JP S62199826 U JPS62199826 U JP S62199826U JP 8693586 U JP8693586 U JP 8693586U JP 8693586 U JP8693586 U JP 8693586U JP S62199826 U JPS62199826 U JP S62199826U
Authority
JP
Japan
Prior art keywords
voltage
power supply
backup
diode
battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8693586U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8693586U priority Critical patent/JPS62199826U/ja
Publication of JPS62199826U publication Critical patent/JPS62199826U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

添付図面第1図は本考案のメモリバツクアツプ
回路の実施例を示す回路図である。 なお図面に用いた符号において、1……電源、
2……半導体メモリ、3……電源スイツチ、4…
…電源ライン、5……バツクアツプ回路、B……
一次電池、C……コンデンサ、D,D……ダ
イオード、1E……電源電圧、BE……一次電池
の電圧、である。
FIG. 1 of the accompanying drawings is a circuit diagram showing an embodiment of the memory backup circuit of the present invention. In addition, in the symbols used in the drawings, 1...power supply,
2...Semiconductor memory, 3...Power switch, 4...
...Power line, 5... Backup circuit, B...
Primary battery, C...capacitor, D1 , D2 ...diode, 1E...power supply voltage, BE...voltage of primary battery.

Claims (1)

【実用新案登録請求の範囲】 半導体メモリの電源端子に第1のダイオードを
介してバツクアツプ電圧を供給する電池と、 電源電圧によつて充電され、電源オフ時に第2
のダイオードを介して上記半導体メモリの電源端
子に放電電圧を供給するバツクアツプ用コンデン
サとを備え、 上記電池の電圧を上記電源電圧より低くしたこ
とを特徴とするメモリバツクアツプ回路。
[Claims for Utility Model Registration] A battery that supplies a backup voltage to a power supply terminal of a semiconductor memory via a first diode;
A memory backup circuit comprising: a backup capacitor that supplies a discharge voltage to a power supply terminal of the semiconductor memory through a diode, the voltage of the battery being lower than the power supply voltage.
JP8693586U 1986-06-07 1986-06-07 Pending JPS62199826U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8693586U JPS62199826U (en) 1986-06-07 1986-06-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8693586U JPS62199826U (en) 1986-06-07 1986-06-07

Publications (1)

Publication Number Publication Date
JPS62199826U true JPS62199826U (en) 1987-12-19

Family

ID=30943695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8693586U Pending JPS62199826U (en) 1986-06-07 1986-06-07

Country Status (1)

Country Link
JP (1) JPS62199826U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249833A (en) * 1984-05-25 1985-12-10 三菱電機株式会社 Memory backup circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249833A (en) * 1984-05-25 1985-12-10 三菱電機株式会社 Memory backup circuit

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