JPS6365312U - - Google Patents

Info

Publication number
JPS6365312U
JPS6365312U JP15972486U JP15972486U JPS6365312U JP S6365312 U JPS6365312 U JP S6365312U JP 15972486 U JP15972486 U JP 15972486U JP 15972486 U JP15972486 U JP 15972486U JP S6365312 U JPS6365312 U JP S6365312U
Authority
JP
Japan
Prior art keywords
diode
transistor
amplifier circuit
lower transistor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15972486U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15972486U priority Critical patent/JPS6365312U/ja
Publication of JPS6365312U publication Critical patent/JPS6365312U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本考案の一実施例を示す回路図、第
２図は従来の発振防止方法を示す回路図、及び第
３図は本考案の説明に供する為の特性図である。 ３…駆動トランジスタ、４…上側出力トランジ
スタ、７…下側出力トランジスタ、８…ダイオー
ド。 FIG. 1 is a circuit diagram showing an embodiment of the present invention, FIG. 2 is a circuit diagram showing a conventional oscillation prevention method, and FIG. 3 is a characteristic diagram for explaining the present invention. 3... Drive transistor, 4... Upper output transistor, 7... Lower output transistor, 8... Diode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] プツシユプル接続された上側及び下側トランジ
スタから成る終段を有する増幅回路において、前
記下側トランジスタのベースにアノードが、前記
下側トランジスタのコレクタにカソードがそれぞ
れ接続されたダイオードを設け、前記上側及び下
側トランジスタと前記ダイオードを同一の半導体
基板上に集積化して形成し、前記ダイオードの接
合容量を用いて前記下側トランジスタの発振防止
を行なつたことを特徴とする増幅回路。 In an amplifier circuit having a final stage consisting of push-pull connected upper and lower transistors, a diode is provided, the anode of which is connected to the base of the lower transistor, and the cathode of which is connected to the collector of the lower transistor. 1. An amplifier circuit characterized in that a side transistor and the diode are integrated and formed on the same semiconductor substrate, and a junction capacitance of the diode is used to prevent oscillation of the lower transistor.
JP15972486U 1986-10-17 1986-10-17 Pending JPS6365312U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15972486U JPS6365312U (en) 1986-10-17 1986-10-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15972486U JPS6365312U (en) 1986-10-17 1986-10-17

Publications (1)

Publication Number Publication Date
JPS6365312U true JPS6365312U (en) 1988-04-30

Family

ID=31084421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15972486U Pending JPS6365312U (en) 1986-10-17 1986-10-17

Country Status (1)

Country Link
JP (1) JPS6365312U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113305A (en) * 1984-11-07 1986-05-31 Rohm Co Ltd Amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113305A (en) * 1984-11-07 1986-05-31 Rohm Co Ltd Amplifier

Similar Documents

Publication Publication Date Title
JPS6365312U (en)
JPS60192513U (en) Monolithic FET amplifier
JPS6315065U (en)
JPS62152448U (en)
JPS60172437U (en) Transistor base drive circuit
JPS60134320U (en) Amplifier circuit coupled to differential amplifier circuit
JPS6315066U (en)
JPS62122358U (en)
JPH03101555U (en)
JPS63200912U (en)
JPH0223114U (en)
JPS6447115U (en)
JPH0218114U (en)
JPH01131699U (en)
JPS60130657U (en) photo transistor
JPH0374196U (en)
JPH01160730U (en)
JPH02137043U (en)
JPH0288249U (en)
JPH0379566U (en)
JPS63164399U (en)
JPS59161718U (en) current mirror circuit
JPS63115238U (en)
JPS62163944U (en)
JPS635733U (en)