JPH0323518B2 - - Google Patents
Info
- Publication number
- JPH0323518B2 JPH0323518B2 JP59135771A JP13577184A JPH0323518B2 JP H0323518 B2 JPH0323518 B2 JP H0323518B2 JP 59135771 A JP59135771 A JP 59135771A JP 13577184 A JP13577184 A JP 13577184A JP H0323518 B2 JPH0323518 B2 JP H0323518B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- compound semiconductor
- temperature
- boat
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13577184A JPS6114199A (ja) | 1984-06-29 | 1984-06-29 | 化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13577184A JPS6114199A (ja) | 1984-06-29 | 1984-06-29 | 化合物半導体単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6114199A JPS6114199A (ja) | 1986-01-22 |
JPH0323518B2 true JPH0323518B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-03-29 |
Family
ID=15159472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13577184A Granted JPS6114199A (ja) | 1984-06-29 | 1984-06-29 | 化合物半導体単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6114199A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5186911A (en) * | 1988-07-05 | 1993-02-16 | Korea Advanced Institute Of Science And Technology | Single crystal growing apparatus and method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS535867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-03-08 | 1978-03-02 | ||
JPS5940713B2 (ja) * | 1979-08-22 | 1984-10-02 | 株式会社ナシヨナルマリンプラスチツク | 輸送袋 |
-
1984
- 1984-06-29 JP JP13577184A patent/JPS6114199A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6114199A (ja) | 1986-01-22 |