JPH0322903Y2 - - Google Patents
Info
- Publication number
- JPH0322903Y2 JPH0322903Y2 JP1985125538U JP12553885U JPH0322903Y2 JP H0322903 Y2 JPH0322903 Y2 JP H0322903Y2 JP 1985125538 U JP1985125538 U JP 1985125538U JP 12553885 U JP12553885 U JP 12553885U JP H0322903 Y2 JPH0322903 Y2 JP H0322903Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- mask
- thickness
- pattern
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985125538U JPH0322903Y2 (enrdf_load_stackoverflow) | 1985-08-15 | 1985-08-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985125538U JPH0322903Y2 (enrdf_load_stackoverflow) | 1985-08-15 | 1985-08-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6234427U JPS6234427U (enrdf_load_stackoverflow) | 1987-02-28 |
JPH0322903Y2 true JPH0322903Y2 (enrdf_load_stackoverflow) | 1991-05-20 |
Family
ID=31018519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985125538U Expired JPH0322903Y2 (enrdf_load_stackoverflow) | 1985-08-15 | 1985-08-15 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0322903Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109817605B (zh) * | 2018-05-29 | 2025-02-28 | 苏州能讯高能半导体有限公司 | 半导体器件及其制备方法 |
-
1985
- 1985-08-15 JP JP1985125538U patent/JPH0322903Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6234427U (enrdf_load_stackoverflow) | 1987-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5264382A (en) | Method of producing semiconductor device using dummy gate structure | |
JPH02148740A (ja) | 半導体装置及びその製造方法 | |
JPS61147571A (ja) | ヘテロ接合バイポ−ラトランジスタの製造方法 | |
JP2616130B2 (ja) | 超伝導素子の製造方法 | |
JPH0322903Y2 (enrdf_load_stackoverflow) | ||
JPS6323666B2 (enrdf_load_stackoverflow) | ||
JPS60231368A (ja) | 半導体装置の製造方法 | |
JPS6199380A (ja) | 半導体装置およびその製造方法 | |
JPS6336563A (ja) | トランジスタ製造方法 | |
JPS6372158A (ja) | 高速半導体装置の製造方法 | |
JPH02100370A (ja) | 竪型mosfet装置の製造方法 | |
JP3236386B2 (ja) | 半導体装置の製造方法 | |
JPS62115782A (ja) | 半導体装置の製造方法 | |
JPS60244075A (ja) | E/d構成集積回路の製造方法 | |
JPS63226922A (ja) | 半導体装置の製造方法 | |
JPS61265870A (ja) | 電界効果トランジスタの製造方法 | |
JPS63107066A (ja) | ヘテロ接合型バイポ−ラトランジスタ | |
JP2973461B2 (ja) | 超伝導素子およびその製造方法 | |
JPS6372166A (ja) | 半導体装置の製造方法 | |
JPH0225041A (ja) | 半導体装置の製造方法 | |
JPS6372165A (ja) | 高速半導体装置の製造方法 | |
JPS62136073A (ja) | 半導体装置の製造方法 | |
JPS63181477A (ja) | 半導体装置の製造方法 | |
JPS6320871A (ja) | 半導体装置 | |
JPS6021521A (ja) | 半導体装置 |