JPH0322679B2 - - Google Patents
Info
- Publication number
- JPH0322679B2 JPH0322679B2 JP59218707A JP21870784A JPH0322679B2 JP H0322679 B2 JPH0322679 B2 JP H0322679B2 JP 59218707 A JP59218707 A JP 59218707A JP 21870784 A JP21870784 A JP 21870784A JP H0322679 B2 JPH0322679 B2 JP H0322679B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- node
- supply terminal
- resistor
- write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Hardware Redundancy (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59218707A JPS61100000A (ja) | 1984-10-19 | 1984-10-19 | 情報記憶装置 |
| US06/788,458 US4745582A (en) | 1984-10-19 | 1985-10-17 | Bipolar-transistor type random access memory device having redundancy configuration |
| US06/788,587 US4796233A (en) | 1984-10-19 | 1985-10-17 | Bipolar-transistor type semiconductor memory device having redundancy configuration |
| US06/788,567 US4744060A (en) | 1984-10-19 | 1985-10-17 | Bipolar-transistor type random access memory having redundancy configuration |
| EP85307561A EP0178949B1 (en) | 1984-10-19 | 1985-10-18 | Bipolar-transistor type semiconductor memory device having a redundancy configuration |
| EP85307562A EP0178950B1 (en) | 1984-10-19 | 1985-10-18 | Bipolar-transistor type random access memory device having a redundancy configuration |
| KR1019850007703A KR900008659B1 (ko) | 1984-10-19 | 1985-10-18 | 용장성 구조를 갖춘 바이폴러 트랜지스터형 랜덤 액세스 메모리 |
| KR1019850007704A KR900008658B1 (ko) | 1984-10-19 | 1985-10-18 | 용장서 구조를 갖춘 반도체 메모리 장치 |
| DE8585307562T DE3585016D1 (de) | 1984-10-19 | 1985-10-18 | Bipolares transistor-direktzugriffsspeichergeraet mit einer redundanzkonfiguration. |
| EP85307560A EP0178948B1 (en) | 1984-10-19 | 1985-10-18 | Bipolar-transistor random access memory having a redundancy configuration |
| DE8585307560T DE3585015D1 (de) | 1984-10-19 | 1985-10-18 | Bipolarer transistor-direktzugriffsspeicher mit redundanzkonfiguration. |
| DE8585307561T DE3585201D1 (de) | 1984-10-19 | 1985-10-18 | Bipolares transistorhalbleiterspeichergeraet mit einer redundanzkonfiguration. |
| KR1019850007732A KR900007997B1 (ko) | 1984-10-19 | 1985-10-19 | 여분회로를 갖는 바이폴라 트랜지스터형 랜돔 억세스 메모리 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59218707A JPS61100000A (ja) | 1984-10-19 | 1984-10-19 | 情報記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61100000A JPS61100000A (ja) | 1986-05-19 |
| JPH0322679B2 true JPH0322679B2 (cs) | 1991-03-27 |
Family
ID=16724161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59218707A Granted JPS61100000A (ja) | 1984-10-19 | 1984-10-19 | 情報記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61100000A (cs) |
-
1984
- 1984-10-19 JP JP59218707A patent/JPS61100000A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61100000A (ja) | 1986-05-19 |
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