JPH0321512B2 - - Google Patents

Info

Publication number
JPH0321512B2
JPH0321512B2 JP57500606A JP50060682A JPH0321512B2 JP H0321512 B2 JPH0321512 B2 JP H0321512B2 JP 57500606 A JP57500606 A JP 57500606A JP 50060682 A JP50060682 A JP 50060682A JP H0321512 B2 JPH0321512 B2 JP H0321512B2
Authority
JP
Japan
Prior art keywords
growth
crystal
seed
crucible
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57500606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58500020A (ja
Inventor
Uiriamu Andoryuu Gaaruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Priority claimed from PCT/US1981/001776 external-priority patent/WO1982002409A1/en
Publication of JPS58500020A publication Critical patent/JPS58500020A/ja
Publication of JPH0321512B2 publication Critical patent/JPH0321512B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP50060682A 1981-01-05 1981-12-31 半導体化合物単結晶の形成と生長を行うための方法と装置 Granted JPS58500020A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US1981/001776 WO1982002409A1 (en) 1981-01-05 1981-12-31 The method and apparatus for forming and growing a single crystal of a semiconductor compound
US222444 2000-08-01

Publications (2)

Publication Number Publication Date
JPS58500020A JPS58500020A (ja) 1983-01-06
JPH0321512B2 true JPH0321512B2 (enExample) 1991-03-22

Family

ID=22161593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50060682A Granted JPS58500020A (ja) 1981-01-05 1981-12-31 半導体化合物単結晶の形成と生長を行うための方法と装置

Country Status (1)

Country Link
JP (1) JPS58500020A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003005417A2 (en) * 2001-07-05 2003-01-16 Axt, Inc. Method and apparatus for growing semiconductor crystals with a rigid support

Also Published As

Publication number Publication date
JPS58500020A (ja) 1983-01-06

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