JPH0321103B2 - - Google Patents
Info
- Publication number
- JPH0321103B2 JPH0321103B2 JP60093606A JP9360685A JPH0321103B2 JP H0321103 B2 JPH0321103 B2 JP H0321103B2 JP 60093606 A JP60093606 A JP 60093606A JP 9360685 A JP9360685 A JP 9360685A JP H0321103 B2 JPH0321103 B2 JP H0321103B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- insulating film
- conductive film
- capacitive insulating
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 239000003990 capacitor Substances 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60093606A JPS6110271A (ja) | 1985-05-02 | 1985-05-02 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60093606A JPS6110271A (ja) | 1985-05-02 | 1985-05-02 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2268577A Division JPS53108392A (en) | 1976-07-05 | 1977-03-04 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6110271A JPS6110271A (ja) | 1986-01-17 |
| JPH0321103B2 true JPH0321103B2 (ko) | 1991-03-20 |
Family
ID=14086987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60093606A Granted JPS6110271A (ja) | 1985-05-02 | 1985-05-02 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6110271A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2671315B2 (ja) * | 1987-09-18 | 1997-10-29 | ソニー株式会社 | メモリ装置 |
| JP2623019B2 (ja) * | 1990-03-13 | 1997-06-25 | 三菱電機株式会社 | 半導体装置 |
| JPH0443674A (ja) * | 1990-06-11 | 1992-02-13 | Matsushita Electron Corp | 半導体記憶装置およびその製造方法 |
| ES2132977T3 (es) * | 1996-01-29 | 1999-08-16 | Mc Micro Compact Car Ag | Vehiculo automovil con una estructura portante de carroceria y con un patron de montaje. |
-
1985
- 1985-05-02 JP JP60093606A patent/JPS6110271A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6110271A (ja) | 1986-01-17 |
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