JPH0321087B2 - - Google Patents

Info

Publication number
JPH0321087B2
JPH0321087B2 JP60062524A JP6252485A JPH0321087B2 JP H0321087 B2 JPH0321087 B2 JP H0321087B2 JP 60062524 A JP60062524 A JP 60062524A JP 6252485 A JP6252485 A JP 6252485A JP H0321087 B2 JPH0321087 B2 JP H0321087B2
Authority
JP
Japan
Prior art keywords
thin film
light
gas
discharge
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60062524A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61220415A (ja
Inventor
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60062524A priority Critical patent/JPS61220415A/ja
Publication of JPS61220415A publication Critical patent/JPS61220415A/ja
Publication of JPH0321087B2 publication Critical patent/JPH0321087B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP60062524A 1985-03-27 1985-03-27 薄膜製造方法 Granted JPS61220415A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062524A JPS61220415A (ja) 1985-03-27 1985-03-27 薄膜製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062524A JPS61220415A (ja) 1985-03-27 1985-03-27 薄膜製造方法

Publications (2)

Publication Number Publication Date
JPS61220415A JPS61220415A (ja) 1986-09-30
JPH0321087B2 true JPH0321087B2 (enExample) 1991-03-20

Family

ID=13202657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062524A Granted JPS61220415A (ja) 1985-03-27 1985-03-27 薄膜製造方法

Country Status (1)

Country Link
JP (1) JPS61220415A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156075A (ja) * 1988-12-09 1990-06-15 Mitsubishi Metal Corp 超電導体薄膜の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160119A (en) * 1981-03-28 1982-10-02 Mitsugi Hanabusa Manufacture of amorphous silicon film by reactive laser sputtering
JPS58165330A (ja) * 1982-03-25 1983-09-30 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6122618A (ja) * 1984-07-10 1986-01-31 Mitsubishi Electric Corp 気相エピタキシヤル結晶成長装置

Also Published As

Publication number Publication date
JPS61220415A (ja) 1986-09-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees