JPH03208311A - Magnetic substance film laminate body and manufacture thereof - Google Patents
Magnetic substance film laminate body and manufacture thereofInfo
- Publication number
- JPH03208311A JPH03208311A JP435890A JP435890A JPH03208311A JP H03208311 A JPH03208311 A JP H03208311A JP 435890 A JP435890 A JP 435890A JP 435890 A JP435890 A JP 435890A JP H03208311 A JPH03208311 A JP H03208311A
- Authority
- JP
- Japan
- Prior art keywords
- film
- fen
- plane
- magnetic
- film laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000126 substance Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 claims abstract description 89
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000010030 laminating Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000702 sendust Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ビデオテープレコーダやフレキシブルディス
ク装置に使用する磁気ヘッドに好適な磁性体膜積層体お
よびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic film laminate suitable for a magnetic head used in a video tape recorder or a flexible disk device, and a method for manufacturing the same.
〔従来の技術］
ビデオテープレコーダやフレキシブルディスク装置に搭
載される磁気ヘッドは、磁気記録の高密度化に伴い、記
録媒体の保磁力が大きくなってきており、この記録媒体
に情報を記録するためには、飽和磁化が大きく、しかも
保磁力の小さな高透磁率の軟磁性体が要求される。また
、磁気ヘッドの信頼性の向上を図る上から、高耐食性、
高硬度の材料が要求されている。従来は、磁気ヘッド材
としてフェライト、パーマロイ、センダスト等の磁性材
が使用されている。[Prior Art] Magnetic heads installed in video tape recorders and flexible disk drives are required to record information on the recording medium because the coercive force of the recording medium is increasing as the density of magnetic recording increases. This requires a soft magnetic material with high permeability and high saturation magnetization and low coercive force. In addition, in order to improve the reliability of the magnetic head, we also offer high corrosion resistance,
Materials with high hardness are required. Conventionally, magnetic materials such as ferrite, permalloy, and sendust have been used as magnetic head materials.
上記したように磁気へ、ド材は、磁気記録の高密度化に
伴い、高飽和磁化を有する優れた磁気特性を備えるとと
もに、高耐食性、高硬度のものが要求されている。しか
し、上記した磁気ヘッド材であるフェライトは、飽和磁
化（４πＭりが５〜６ ｋＧ［、、かなく、またセンダ
ストにしても、飽和磁化が１０ｋＧ程度であり、高密度
記録に充分対応できるような１５ｋＧ以上の飽和磁化を
得ることができない。As described above, magnetic materials are required to have excellent magnetic properties such as high saturation magnetization, high corrosion resistance, and high hardness as the density of magnetic recording increases. However, ferrite, which is the magnetic head material mentioned above, has a saturation magnetization (4πM of 5 to 6 kG), and even Sendust has a saturation magnetization of about 10 kG, which is sufficient for high-density recording. It is not possible to obtain a saturation magnetization of 15 kG or more.
本発明は、前記従来技術の欠点を解消するためになされ
たもので、磁気特性に優れ、高耐食性、高硬度を有する
磁性体膜積層体を提供することを目的とし、またこの磁
性体膜積層体を得るための製造方法を提供することを目
的としている。The present invention has been made in order to eliminate the drawbacks of the prior art, and aims to provide a magnetic film laminate having excellent magnetic properties, high corrosion resistance, and high hardness. The purpose is to provide a manufacturing method for obtaining the body.
ＣＭｌ、Ｎを解決するための手段および作用〕上記の目
的を達成するために、本発明に係る磁性体膜積層体は、
ＦｅＮ膜とＳｉＮ膜とを交互に積層した磁性体膜積層体
において、前記ＦｅＮ膜中でＦｅ（３１０）面または（
２００）面が膜面と平行に配向していることを特徴とし
ている。Means and action for solving CMl, N] In order to achieve the above object, the magnetic film laminate according to the present invention has the following features:
In a magnetic film stack in which FeN films and SiN films are alternately stacked, Fe(310) plane or (
200) plane is oriented parallel to the film surface.
このように構成した本発明の磁性体膜積層体は、保磁力
Ｈｃ ＜ １０ ｅ以下となる。ＦｅＮ膜のＮを５．０
〜１５．０ａｔ％にすることにより、磁気特性を低下さ
せることなく耐食性、硬度の向上がはかれる。The magnetic film laminate of the present invention configured in this manner has a coercive force Hc < 10 e or less. N of FeN film is 5.0
By setting the content to 15.0 at%, corrosion resistance and hardness can be improved without deteriorating magnetic properties.
ＦｅＮ膜とＳｉＮ膜とを積層する場合、ＦｅＮ膜の厚さ
は、充分な磁気特性が得られる０、１μｍ以上であって
、熱処理をしても微細な結晶粒の状態を保持できる１、
０μｍ以下がよい。そして、ＳｉＮ膜の厚さは、磁性体
膜の耐食性、硬度の向上が図れ、かつ積層膜全体の４π
Ｍ、の低下がない０．０１〜０，０５μｍが適当である
。When a FeN film and a SiN film are laminated, the thickness of the FeN film is 0.1 μm or more to obtain sufficient magnetic properties, and the state of fine crystal grains can be maintained even after heat treatment.
It is preferably 0 μm or less. The thickness of the SiN film is determined to improve the corrosion resistance and hardness of the magnetic film, and to increase the thickness of the entire laminated film by 4π.
A suitable value is 0.01 to 0.05 μm, which causes no decrease in M.
また、本発明に係る磁性体膜積層体の製造方法は、Ｆｅ
Ｎ膜とＳｉＮ膜とを交互に成膜して薄膜積層体を形成し
た後、この薄膜積層体を真空中または還元雰囲気中にお
いて、３００℃〜６００゛Ｃまで温度を段階的に順次上
昇させ、複数の異なった温度で熱処理をし、前記ＦｅＮ
膜中でＦｅ（３１０）面または（２００）面を膜面と平
行に配向させることを特徴としている。Further, the method for manufacturing a magnetic film laminate according to the present invention includes Fe
After forming a thin film laminate by alternately depositing N films and SiN films, the temperature of this thin film laminate is raised stepwise from 300°C to 600°C in a vacuum or in a reducing atmosphere. The FeN
It is characterized in that the Fe (310) or (200) plane is oriented parallel to the film surface in the film.
ＦｅＮ膜とＳｉＮ膜との積層は、通常のマグネトロンス
パンタリングや対向ターゲットスパンタリング等によっ
て、ＦｅＮ膜とＳｉＮ膜とを交互に成膜して行うことが
でる。The FeN film and the SiN film can be laminated by alternately forming the FeN film and the SiN film by ordinary magnetron sputtering, facing target sputtering, or the like.
また、熱処理は、３００℃〜６００℃の範囲で行うこと
が望ましく、例えば真空中または窒素ガス等の還元ガス
や希ガスの雰囲気中で、３００℃，４００’ Ｃ，５０
０℃および６００℃の各温度において、それぞれ０．５
〜３時間ずつ保持する。３００℃よりも低い温度で熱処
理をしても、歪みの除去や磁気特性の向上への寄与が小
さい、また、６００℃より高い温度において熱処理を行
うと、磁気特性が低下するおそれがある。Further, the heat treatment is desirably carried out in the range of 300°C to 600°C, for example, at 300°C, 400°C, 50°C in vacuum or in an atmosphere of reducing gas such as nitrogen gas or rare gas
0.5 at each temperature of 0℃ and 600℃
Hold for ~3 hours each. Even if heat treatment is performed at a temperature lower than 300°C, there is a small contribution to removing distortion or improving magnetic properties, and if heat treatment is performed at a temperature higher than 600°C, there is a risk that magnetic properties will deteriorate.
ある。be.
なお、昇温時間は、室温から３００”Ｃまでが３０分以
上、また３００℃から４００℃，４００℃から５００ａ
Ｃ１５０ｏａＣがら６００℃へが１５分以上であること
が望ましく、各温度において昇温時間よりも長い一定時
間保つことが望ましい。The heating time is 30 minutes or more from room temperature to 300"C, and from 300℃ to 400℃, and from 400℃ to 500℃.
It is desirable that the temperature rise from C150oaC to 600°C takes 15 minutes or more, and it is desirable that the temperature be maintained at each temperature for a certain period of time that is longer than the heating time.
〔実施例］
以下、本発明に係る磁性体膜の製造方法の好ましい実施
例を詳説する。[Example] Hereinafter, preferred examples of the method for manufacturing a magnetic film according to the present invention will be described in detail.
厚さ２．５ｍｍ、幅５０ｍｍ、長さ１５０ｍｍのＦｅタ
ーゲットとＳｉＮ膜用の厚さ５ｍｍ、ｌ１１００ｍｍ、
長さ１００ｍｍのＳｉＮターゲットとを真空容器内に配
置し、真空容器内を排気してｌＸｌ０−’Ｔｏｒｒ以下
にした後、真空容器内に窒素ガスとアルゴンガスを導入
し、窒素ガス圧を０．０６Ｘ１０−３Ｔｏｒｒ、窒素ガ
ス＋アルゴンガスのガス圧を２ＸＩＯ−’Ｔｏｒｒとし
た。その後、Ｆｅターゲットに２５０Ｗの電力を投入し
て、対向スパッタリングにより基板上にＦｅＮ膜を０゜
８μｍ成膜した０次に、ＳｉＮターゲットに５００Ｗの
電力を投入し、対向スパッタリングによってＦｅＮ膜の
上にＳｉＮ膜を０．０１μｍ形成した。さらに、このＳ
ｉＮ膜上に前記と同様にしてＦｅＮ膜とＳｉＮ膜とを交
互に成膜して積層し、厚さが約５μｍの積層体を得た。Fe target with thickness 2.5mm, width 50mm, length 150mm and thickness 5mm for SiN film, l1100mm,
A SiN target with a length of 100 mm was placed in a vacuum container, and the vacuum container was evacuated to a pressure of 1X10-'Torr or less. Nitrogen gas and argon gas were then introduced into the vacuum container to reduce the nitrogen gas pressure to 0. The gas pressure of nitrogen gas + argon gas was set to 2XIO-'Torr. After that, a power of 250 W was applied to the Fe target, and a FeN film was deposited to a thickness of 0°8 μm on the substrate by facing sputtering. A SiN film was formed to a thickness of 0.01 μm. Furthermore, this S
FeN films and SiN films were alternately formed and laminated on the iN film in the same manner as described above to obtain a laminate having a thickness of about 5 μm.
上記の如くして得たＦｅＮ膜とＳｉＮ膜との積層体を、
ｌＸ１０−’ＴｏｒｒからｌＸｌ０−６Ｔ。The laminate of the FeN film and SiN film obtained as described above is
lX10-'Torr to lX10-6T.
ｒｒの真空中に配置し、約１時間かけて室温から３００
℃に昇温しで３００℃において３時間保持した。その後
、約３０分かけて４００℃に昇温し、４００℃において
２時間保持、次に３０分かけて５００℃に昇温しで５０
０″′Ｃにおいて２時間保持、さらに３０分かけて６０
０℃に昇温しで６００６Ｃにおいて２時間保持するアニ
ール処理を施したのち、放冷した。Place in a vacuum of 300 ml from room temperature for about 1 hour
The temperature was raised to 300°C and held at 300°C for 3 hours. After that, the temperature was raised to 400°C over about 30 minutes, held at 400°C for 2 hours, then raised to 500°C over 30 minutes, and then heated to 500°C.
Hold at 0'''C for 2 hours, then increase to 60℃ for another 30 minutes.
After performing an annealing treatment in which the temperature was raised to 0° C. and held at 6006° C. for 2 hours, it was allowed to cool.
このようにして温度を段階的に順次上げ、異なる温度で
連続的にアニール処理をしたＦｅＮ膜とＳｉＮ膜との積
層体の磁気特性を測定したところ、４πＭ、≧１８ｋＧ
、保磁力Ｈｅ ＜ １０ ｅの高磁気特性を有していた
。そして、上記の如くして熱処理をしたＦｅＮ膜Ｘ膜面
線回折パターンべたところ、第１図に示したように、熱
処理前にはＦｅ（１１０）面のところに強度のピークが
現れ、（１１０）面が膜面と平行していたのが、熱処理
後は（２００）面のところにピークが現れ、Ｆｅ（２０
０）面が膜面と平行に配向していることを示した。また
、第１図に図示をしていないが、２θが約１１６度のと
ころにＦｅ（３１０）面を示すピークが現れ、ＦｅＮ膜
は、Ｆ ｅ （２００）面が膜面と平行に配向した結晶
粒と、（３１０）面が膜面と平行に配向した結晶粒とが
混在していることがわかった。When we measured the magnetic properties of a stacked body of FeN film and SiN film that was successively annealed at different temperatures by raising the temperature step by step in this way, we found that it was 4πM, ≧18kG.
, it had high magnetic properties with a coercive force He < 10 e. As shown in Figure 1, an intensity peak appears at the Fe (110) plane before the heat treatment, and the (110 ) plane was parallel to the film surface, but after heat treatment, a peak appeared at the (200) plane, indicating that Fe(20
0) plane was oriented parallel to the film surface. Although not shown in Figure 1, a peak indicating the Fe(310) plane appears at a 2θ of approximately 116 degrees, indicating that the FeN film has the Fe(200) plane oriented parallel to the film surface. It was found that crystal grains and crystal grains in which the (310) plane was oriented parallel to the film surface coexisted.
第２図は、窒素ガスの濃度と成膜したＦｅＮ膜の硬度と
の関係を示したものである。すなわち、アルゴンガス＋
窒素ガスの圧力ヲ２ Ｘ １０−３Ｔ。FIG. 2 shows the relationship between the concentration of nitrogen gas and the hardness of the formed FeN film. In other words, argon gas +
The pressure of nitrogen gas is 2 x 10-3T.
ｒｒに保ち、窒素ガスの分圧を変化させて対向スパッタ
リングによってＦｅＮ膜を成膜したところ、窒素ガス分
圧が０．ｌＸｌ０”３Ｔｏｒｒの付近で最も大きな硬度
が得られ、センダストにほぼ匹敵する硬さを有していた
。When a FeN film was formed by facing sputtering while maintaining the nitrogen gas partial pressure at 0.rr, the partial pressure of the nitrogen gas was changed to 0. The highest hardness was obtained near 1X10''3 Torr, and the hardness was almost comparable to Sendust.
以上に説明したように、本発明の磁性体膜積層体によれ
ば、ＦｅＮ膜中のＦｅ（３１０）面または（２００）面
が膜面と平行に配向させたことにより、保磁力Ｈｃ＜１
０ｅ以下となり、磁気特性の向上が図れ、耐食性に優れ
た硬度の大きい磁性体膜積層体が得られる。As explained above, according to the magnetic film laminate of the present invention, the FeN film has a coercive force Hc<1 because the Fe (310) plane or (200) plane is oriented parallel to the film surface.
0e or less, a magnetic film laminate with high hardness and improved magnetic properties and excellent corrosion resistance can be obtained.
また、０．１〜１．０μｍのＦｅＮ膜と０．０１〜０．
０５μｍのＳｉＮ膜とを積層すると、磁気特性の向上と
ともにＦｅＮ膜単独よりも耐食性、硬度の向上が図れる
。In addition, a 0.1-1.0 μm FeN film and a 0.01-0.0 μm thick FeN film are also used.
By laminating a FeN film with a thickness of 0.05 μm, it is possible to improve not only the magnetic properties but also the corrosion resistance and hardness of the FeN film alone.
また、本発明に係る磁性体膜積層体の製造方法によれば
、ＦｅＮ膜とＳｉＮ膜とを交互に成膜して薄膜積層体を
形成した後、この薄膜積層体を真空中または還元雰囲気
中において、３００℃〜６００℃まで温度を段階的に順
次上昇させ、複数の異なった温度で連続的に熱処理をす
ることにより、ＦｅＮ膜中のＦｅ（３１０）面または（
２００）面を膜面と平行に配向させることができる。Further, according to the method for manufacturing a magnetic film laminate according to the present invention, after forming a thin film laminate by alternately forming FeN films and SiN films, the thin film laminate is placed in a vacuum or a reducing atmosphere. By increasing the temperature stepwise from 300°C to 600°C and performing continuous heat treatment at multiple different temperatures, the Fe(310) plane or (
200) plane can be oriented parallel to the film surface.
第１図は本発明の実施例に係る製造方法により成膜した
ＦｅＮ膜の熱処理前と熱処理後のＸ線回折の結果を示す
図、第２図は窒素ガス圧と成膜したＦｅＮ膜の硬度との
関係を示す図である。Fig. 1 is a diagram showing the results of X-ray diffraction before and after heat treatment of the FeN film formed by the manufacturing method according to the embodiment of the present invention, and Fig. 2 shows the nitrogen gas pressure and the hardness of the formed FeN film. FIG.
Claims (4)
積層体において、前記ＦｅＮ膜中でＦｅ（３１０）面ま
たは（２００）面が膜面と平行に配向していることを特
徴とする磁性体膜積層体。(1) A magnetic film laminate in which FeN films and SiN films are alternately laminated, characterized in that in the FeN film, the Fe (310) plane or (200) plane is oriented parallel to the film surface. magnetic film laminate.
、前記ＳｉＮ膜は厚さが０．０１〜０．０５μｍである
ことを特徴とする請求項１に記載の磁性体膜積層体。(2) The magnetic film according to claim 1, wherein the FeN film has a thickness of 0.1 to 1.0 μm, and the SiN film has a thickness of 0.01 to 0.05 μm. laminate.
積層体の製造方法において、ＦｅＮ膜とＳｉＮ膜とをス
パッタリングにより交互に成膜して薄膜積層体を形成し
た後、この薄膜積層体を真空中または還元雰囲気中にお
いて、３００℃〜６００℃まで温度を段階的に順次上昇
させ、複数の異なった温度で熱処理をして、前記ＦｅＮ
膜でＦｅ（３１０）面または（２００）面を膜面と平行
に配向させることを特徴とする磁性体膜積層体の製造方
法。(3) In a method for manufacturing a magnetic film laminate in which FeN films and SiN films are alternately laminated, a thin film laminate is formed by alternately depositing FeN films and SiN films by sputtering, and then the thin film laminate is The temperature of the FeN body is raised stepwise from 300°C to 600°C in a vacuum or in a reducing atmosphere, and the FeN body is heat-treated at a plurality of different temperatures.
A method for manufacturing a magnetic film laminate, characterized in that the Fe (310) plane or (200) plane of the film is oriented parallel to the film surface.
よび６００℃の各温度において、それぞれその温度に到
達するまでに要した時間よりも長時間保持することを特
徴とする請求項３に記載の磁性体膜積層体の製造方法。(4) The heat treatment is performed at each temperature of 300°C, 400°C, 500°C, and 600°C for a longer time than the time required to reach each temperature. A method for manufacturing a magnetic film laminate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP435890A JPH03208311A (en) | 1990-01-10 | 1990-01-10 | Magnetic substance film laminate body and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP435890A JPH03208311A (en) | 1990-01-10 | 1990-01-10 | Magnetic substance film laminate body and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03208311A true JPH03208311A (en) | 1991-09-11 |
Family
ID=11582167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP435890A Pending JPH03208311A (en) | 1990-01-10 | 1990-01-10 | Magnetic substance film laminate body and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03208311A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620836A (en) * | 1991-10-18 | 1994-01-28 | Limes:Kk | Method of forming soft magnetic multilayer film |
-
1990
- 1990-01-10 JP JP435890A patent/JPH03208311A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620836A (en) * | 1991-10-18 | 1994-01-28 | Limes:Kk | Method of forming soft magnetic multilayer film |
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