JPH1012437A - Alloy magnetic film with substrate for magnetic head, its manufacture and magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the generation of ferromagnetic body layer made of Fe3 O4 on a substrate during heat treatment by forming a buffer layer Cox Oy (y/x=1 to 4/3). SOLUTION: In an alloy magnetic film with substrate for magnetic head in which an alloy magnetic film formed of an Fe-M-C-based nano crystal alloy (M: element of IVB group, VB group, IIIA group, and IVA group) or an Fe-M- based alloy (M: element of IVB group, VB group, IIIA group, and IVA group) is formed on a substrate made of α-Fe2 O3 with a buffer layer in between, the buffer layer is formed of Cox Oy (y/x=1 to 4/3). In addition, Cox Oy is CoO or Co3 O4 . Further, the Fe-M-C-based nano crystal alloy is one kind among Fe-Si-Al- Hf-Ta-C, Fe-Si-Al-Hf-C, Fe-Hf-C, Fe-Si-Hf-C, and Fe-Si-Hf-Ta-C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an alloy magnetic film with a substrate used for a magnetic head of a magnetic disk device such as a computer, a method of manufacturing the same, and a magnetic head.

[0002]

2. Description of the Related Art In the field of magnetic recording, a magnetic recording medium having a high coercive force and a high residual magnetic flux density has been used in accordance with an increase in recording signal density. There is a demand for a magnetic film having high saturation magnetization and high magnetic permeability as a core material of a magnetic head for performing the following.

As such a magnetic film having a high saturation magnetization and a high magnetic permeability, a Fe-MC-based nanocrystalline alloy (M: IVB group, VB
Group, IIIA group, IVA group) and Fe-M alloy (M: IVB group,
VB, IIIA and IVA magnetic films are known. These alloy magnetic films are formed by sputtering on a substrate, and the substrate has an α-
Fe ₂ O ₃ (hematite) is used.

[0004]

However, when the above alloy magnetic film is formed on an α-Fe ₂ O ₃ substrate, there is a problem that the magnetic film is easily peeled off.

To avoid this, an Al ₂ O ₃ layer is formed as a buffer layer on an α-Fe ₂ O ₃ substrate. However, after the formation of the alloy magnetic film, a heat treatment in an inert gas atmosphere or under vacuum for the purpose of obtaining soft magnetism allows the substrate to have an interface with the buffer layer at the interface with the buffer layer.
Ferromagnetic Fe ₃ O ₄ (magnetite) in which e ₂ O ₃ is reduced is generated. Since the Fe ₃ O ₄ ferromagnetic layer causes a magnetic interaction with the alloy magnetic film, high magnetic permeability cannot be obtained in the alloy magnetic film.

An object of the present invention is to provide an alloy magnetic film made of an Fe-MC-based nanocrystalline alloy or an Fe-based alloy formed on a substrate of α-Fe ₂ O ₃ via a buffer layer during heat treatment. An alloy magnetic film with a substrate for a magnetic head having a high saturation magnetization and a high magnetic permeability, having a high magnetic permeability in the alloy magnetic film while preventing the formation of a ferromagnetic layer of Fe ₃ O _4, a method of manufacturing the same, and a magnetic method. Is to provide a head.

[0007]

The above object is achieved by an alloy magnetic film with a substrate for a magnetic head, a method of manufacturing the same, and a magnetic head according to the present invention. In summary, the present invention is, via a buffer layer on a substrate α-Fe ₂ O _3, F
e-MC-based nanocrystalline alloy (M: IVB group, VB
Group, IIIA, IVA elements) or Fe-M alloy (M: IVB, VB, IIIA, IVA elements)
In an alloy magnetic film with a substrate for a magnetic head formed with an alloy magnetic film made of CoxOy (however,
y / x = 1 to 4/3). This is an alloy magnetic film with a substrate for a magnetic head.

According to the present invention, preferably, CoxOy
Is CoO or Co ₃ O ₄ . Fe-MC-based nanocrystalline alloy is made of Fe-Si-Al-Hf-Ta-C, F
e-Si-Al-Hf-C, Fe-Hf-C, Fe-S
It is one kind selected from the group consisting of i-Hf-C and Fe-Si-Hf-Ta-C. The Fe-M alloy is Fe
-Si-Al, an alloy mainly containing one selected from the group consisting of Fe-Si and Fe-Al.

In another aspect of the present invention, a buffer layer is formed on a substrate of α-Fe ₂ O ₃ , heat-treated as required, and then a Fe-MC-based nanocrystalline alloy (provided that , M: Group IVB, VB, IIIA, IVA element) or Fe-M alloy (M: IVB, VB, IIIA
In the method of manufacturing an alloy magnetic film with a substrate for a magnetic head, a magnetic layer made of an alloy of group IVA or IVA) is formed and then heat-treated.
(However, y / x = 1 to 4/3). A method of manufacturing an alloy magnetic film with a substrate for a magnetic head, wherein a layer of y / x = 1 to 4/3 is formed.

According to the present invention, preferably, the buffer layer is formed by sputtering under an oxygen-containing inert gas having an oxygen content of 30% or more and 60% or less at a sccm ratio.
Fe-MC-based nanocrystalline alloy is made of Fe-Si-Al-H
f-Ta-C, Fe-Si-Al-Hf-C, Fe-H
f-C, Fe-Si-Hf-C and Fe-Si-Hf
-Ta-C is one type selected from the group consisting of: Fe-
The M-based alloy is composed of Fe-Si-Al, Fe-Si and Fe
-An alloy containing one type selected from the group consisting of Al as a main component.

According to still another aspect of the present invention, there is provided a magnetic head formed by joining two core halves with a predetermined gap length and joining them, wherein each of the core halves comprises:
CoxOy (y / x on a substrate of α-Fe ₂ O ₃
= 1 to ／), the Fe-MC-based nanocrystalline alloy (M: element of the IVB group, VB group, IIIA group, IVA group) or Fe-M alloy (M: IVB group, VB group, IIIA
The magnetic head is characterized in that an alloy magnetic film made of a group IVA element is formed.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings.

As shown in FIG. 1, an alloy magnetic film 1 according to the present invention is formed on a substrate 3 of α-Fe ₂ O _{3 with} a buffer layer 2 interposed therebetween, and is an alloy magnetic film with a substrate. In the present invention, the ferromagnetic Fe ₃ O ₄ (magnetite) is prevented from being generated at the interface with the buffer layer 2 of the substrate 3 by the heat treatment for obtaining soft magnetism after the formation of the alloy magnetic film 1. For this purpose, the buffer layer 2 was formed of cobalt oxide CoxOy, for example, CoO or Co ₃ O ₄ instead of the conventional Al ₂ O ₃ .

The present inventors have investigated and studied the cause of the formation of ferromagnetic Fe ₃ O ₄ (magnetite) at the interface with the buffer layer 2 of the substrate 3 due to the heat treatment after the formation of the alloy magnetic film 1. . As a result, the following was found. Alloy magnetic film 1
At the time of the heat treatment after the film formation, the alloy magnetic film 1 functions as a reducing agent. At this time, conventionally, the buffer layer 2 was formed of Al ₂ O ₃ having a large free energy of formation and a high affinity for oxygen. However, diffusion of oxygen could not be prevented, and the alloy magnetic film 1 was not formed.
It was found that the buffer layer 2 was not affected even if the reducing power of the present invention acted, and the reducing power reached the substrate ₃ to reduce Fe ₂ O ₃ and generate Fe ₃ O ₄ .

Therefore, if the buffer layer 2 is formed of a material that hardly diffuses oxygen or releases oxygen, even if the alloy magnetic film 1 functions as a reducing agent during heat treatment after film formation, the reducing power is reduced. It is considered that the relaxation can be achieved by the layer 2 and the reduction of α-Fe ₂ O _{3 in} the substrate 3 can be prevented.
Then, at the interface between the substrate 3 and the alloy magnetic film 1, Fe ₃ O
₄ is never generated.

Therefore, in the present invention, as described above, the buffer layer 2 is formed of cobalt oxide CoxOy. Hereinafter, the present invention will be described in detail.

In the present invention, the buffer layer 2 is preferably made of CoO or Co ₃ O ₄ , but is generally formed of cobalt oxide represented by CoxOy (where y / x = 1 to 4/3). be able to. When the buffer layer 2 is made of Co ₃ O ₄ , its thickness is preferably less than 800 nm. This is because if the thickness of the Co ₃ O ₄ buffer layer is 800 nm or more, the alloy magnetic film is peeled off during heat treatment for obtaining soft magnetism after the formation of the alloy magnetic film. When the buffer layer 2 is made of CoO, the thickness is 0.1 μm.
In the range of 10 μm to 10 μm, no problems such as deterioration of the magnetic permeability due to the difference in the thickness of the buffer layer and peeling of the alloy magnetic film are observed.
However, as the buffer layer becomes thicker, the crystal grains of CoO forming the buffer layer become larger and the structure of the buffer layer deteriorates, so that the buffer layer is not made thicker than necessary. Generally, it may be 1 μm or less.

The buffer layer 2 is made of an inert gas containing oxygen.
Reaction with Co as target under sputtering (sputter gas)
Sputtered or containing inert gas or oxygen
Under an inert gas sputtering gas, a Co oxide target is
Oxide on the substrate 3 by sputtering using
It can be formed by forming a film. Preferably
Indicates that the sputtering method is a DC facing target type,
The sputtering gas is Ar + O _Two , Sputtering gas pressure Ar / O_Two 
Is 35/15 to O / 50 (sccm ratio), cathode power
0.1 to 1.0 kW, temperature of substrate 3 (substrate temperature) is room temperature
(0 ° C) to 400 ° C.

The alloy magnetic film 1 is made of an Fe-MC-based nanocrystalline alloy or an Fe-M-based alloy, where M is I
VB, VB, IIIA and IVA elements. Fe-M-
A preferred example of the C-based nanocrystalline alloy is Fe-Si
-Al-Hf-Ta-C, Fe-Si-Al-Hf-
C, Fe-Hf-C, Fe-Si-Hf-C or F
e-Si-Hf-Ta-C and the like. Preferred examples of the Fe-M-based alloy include an alloy mainly containing one selected from the group consisting of Fe-Si-Al, Fe-Si, and Fe-Al. −
Si, Fe-Al, Fe-Si-Al-Hf or F
e-Si-Al-Hf-Ta and the like. The total thickness of the alloy magnetic film 1 is suitably 1 μm or more and 20 μm or less in consideration of the track width, magnetic recording, and readability of a magnetic head.

The alloy magnetic film 1 is formed on the buffer layer 2 of the substrate 3 by sputtering using an alloy as a target under an inert gas.
Form on top. The sputtering gas is Ar, the sputtering gas pressure is 1 to 2 mTorr, the cathode power is 0.5 to 3 kW, and the substrate temperature is 0 to 200 ° C.

According to the present invention, the buffer layer 2 of CoxOy immediately after film formation is Co ₃ O ₄ . Before forming the alloy magnetic film 1 on the buffer layer 2, the buffer layer 2 is made of CoO.
In this case, the buffer layer 2 can be heat-treated if desired. It is sufficient that the heat treatment after the formation of the buffer layer 2 be performed in the air under the conditions of a substrate temperature of 500 to 1000 ° C. and a time of 30 minutes to 2 hours.

After the alloy magnetic film 1 is formed, it is subjected to a necessary heat treatment for the purpose of obtaining soft magnetism before being used for manufacturing a magnetic head. The heat treatment conditions are 5 × 10 ⁻⁷ to
The substrate temperature is 600 to 800 ° C. and the time is about 10 to 60 minutes under an inert gas of 5 × 10 ⁻⁶ Torr or under vacuum.

As the substrate 3, α-Fe ₂ O ₃ (hematite) capable of improving CSS characteristics is used. The thickness of the substrate 3 is about 200 to 500 μm.

According to the present invention, since the alloy magnetic film 1 is formed on the α-Fe ₂ O ₃ substrate 3 with the CoxOy buffer layer 2 interposed therebetween, during the heat treatment after the formation of the alloy magnetic film 1, Even if the film 1 works as a reducing agent, its reducing power is reduced to Cox
The buffer layer 2 of the substrate 3 is relaxed by the buffer layer 2 of Oy.
The formation of ferromagnetic Fe ₃ O ₄ (magnetite) at the interface with the substrate can be prevented. Therefore, there is no problem that the Fe ₃ O ₄ ferromagnetic layer is formed on the substrate 3 and magnetically interacts with the alloy magnetic film 1. The Fe—M—C nanocrystal alloy or the Fe—M alloy is used. The magnetic film having high saturation magnetization and high magnetic permeability can be obtained while maintaining the high magnetic permeability of the alloy magnetic film 1 made of

To produce a magnetic head from the alloy magnetic film 1, the following procedure may be used. First, as shown in FIG. 2, a substrate 3 ′ of α-Fe ₂ O ₃ similar to the substrate 3 is adhered on the alloy magnetic film 1 by using a glass 4, and a magnetic film structure 5 is formed.
Is prepared. As shown in FIG. 3, the magnetic film structure 5 is cut in the thickness direction on which the alloy magnetic film 1 is formed to form a pair of core half blocks 18 and 19, and the core half block 18 has a winding groove. After forming 20, both core half blocks 18, 1
If necessary, the core half block 1 facing the winding groove 20 may be used to strengthen the joining of the butting surfaces 9.
9 are formed with chamfered portions 22 on both side surfaces, and concave portions 23 are formed on the opposite sides of the gap 21 of both core half blocks. Then, the butting surfaces 18a and 19a of the two core half blocks 18 and 19 are polished to form the gap 2
Form one.

The two core half-blocks 18 and 19 in which the gap portion 21 is formed are formed by melting and filling the chamfered portion 22 and the concave portion 23 with mold glass.
Is melted and pressed by heating at 500 ° C. to 650 ° C. for 30 minutes to 1 hour. Finally, in order to form a tape sliding surface, R polishing and other molding and winding are performed to obtain the magnetic head 10.

Hereinafter, specific examples of the present invention will be described.

Example 1 In accordance with the present invention, a CoxOy buffer layer was formed on an α-Fe ₂ O ₃ substrate, and an alloy magnetic film was formed on the buffer layer to produce an alloy magnetic film with a substrate.

The substrate was α-Fe ₂ manufactured by Tokin Co., Ltd.
An O ₃ substrate (trade name: HN02) was used. Buffer layer,
DC facing target type sputtering was used for forming the alloy magnetic film. The formation of the alloy magnetic film was performed after forming the buffer layer on the substrate and then subjecting the substrate to a heat treatment in a vacuum for 1 hour.
The alloy magnetic film was an Fe-Si-Al-Hf-C alloy.
The conditions for forming the buffer layer and the alloy magnetic film were as follows.

Film forming conditions for buffer layer (CoxOy) Sputtering method: DC facing target method Target: Co Target size: 100 mmφ Sputtering gas: Ar-O ₂ ; Ar / O ₂ = 35/1
5, 30/20, 25/25, 20/30, 10/4
0, 0/50 (sccm ratio) Gas pressure: 1.0 mTorr Cathode power: 0.5 kW Substrate temperature: 300 ° C. Film thickness: 500 nm

Alloy magnetic film (Fe-Si-Al-Hf-
C) Film forming conditions Sputtering method: DC facing target method Target: Fe-Si-Al-Hf-C Target size: 100 mmφ Sputtering gas: Ar Gas pressure: 1-2 mTorr Cathode power: 1.5 kW Substrate temperature: room temperature Film thickness : 2.7 μm

When the buffer layer after the heat treatment was examined, it was found to be a CoO phase. After forming the alloy magnetic film, 2 × 10
Heat treatment was performed at 700 ° C. for 20 minutes in a high vacuum of ⁻⁶ Torr. Thereafter, the magnetic properties of the magnetic film were measured. Magnetic properties were evaluated by magnetic permeability by a ferrite yoke method (measurement frequency: 2 MHz). Table 1 shows the results. Note that the above-described film forming conditions of the magnetic film are conditions under which uniaxial anisotropy is easily imparted in view of device characteristics.

For comparison, an alloy magnetic film was formed in the same manner as described above except that the buffer layer was formed of Al ₂ O ₃ .
After the heat treatment under high vacuum, the magnetic properties of the magnetic film were measured. A
The conditions for forming the l ₂ O ₃ buffer layer are as follows.

Film forming conditions of buffer layer (Al ₂ O ₃ ) Sputtering method: DC facing target type Target: Al Target size: 100 mmφ Sputtering gas: Ar-O ₂ ; Ar / O ₂ = 30/2
0 (sccm) Gas pressure: 1.0 mTorr Cathode power: 0.5 kW Substrate temperature: 300 ° C. Film thickness: 100 nm

[0035]

[Table 1]

In the alloy magnetic film with a substrate according to the present invention, the alloy magnetic film is formed on the substrate via the CoxOy (= CoO) buffer layer. As shown in FIG. 1, the magnetic permeability can be maintained high in both the easy axis direction and the hard axis direction, and Cox
The oxygen introduction ratio (sccm ratio) at the time of forming the Oy buffer layer is 6
At 0% or less, the magnetic permeability can be improved by 10% or more compared to the case of the Al ₂ O ₃ buffer layer. Therefore, CoxOy
The oxygen introduction ratio (sccm ratio) at the time of forming the buffer layer is 60%
And CoxOy above 60%
There is also a problem that the crystallinity of the buffer layer deteriorates.

Example 2 A CoxOy buffer layer was formed under the following film forming conditions.
After that, a buffer layer was formed under two conditions of a case where heat treatment was performed in vacuum for one hour and a case where heat treatment was not performed. Others were the same as Example 1.

Deposition conditions of buffer layer (CoxOy) Sputtering method: DC facing target type Target: Co Target size: 100 mmφ Sputtering gas: Ar-O ₂ ; Ar / O ₂ = 11 /
9, 10/10 (sccm ratio) Gas pressure: 1.0 mTorr Cathode power: 0.5 kW Substrate temperature: 300 ° C. Film thickness: 500 nm

In this example, the buffer layer before the heat treatment was a Co ₃ O ₄ phase. The buffer layer after the heat treatment was a CoO phase. After forming the alloy magnetic film, 700 mm in a high vacuum of 2 × 10 ⁻⁶ Torr as in the first embodiment.
Table 2 shows the results when the magnetic properties of the magnetic film were measured after the heat treatment at 20 ° C. for 20 minutes.

[0040]

[Table 2]

As shown in Table 2, the buffer layer was made of Co.
_The permeability increases in both the ₃ O ₄ phase and the CoO phase, but the Co ₃ O ₄ phase has better magnetic properties. This is because during the heat treatment under high vacuum after the formation of the alloy magnetic film,
_It is considered that since oxygen is released as ₃ O ₄ → CoOz + O, the effect of preventing reduction by the alloy magnetic film is high.

Example 3 As shown in the following film-forming conditions, the film thickness of the CoxOy buffer layer was 100 nm to 10 μm, and the buffer was formed under the conditions of performing and not performing a heat treatment for 1 hour in a vacuum after forming the buffer layer. The layer was deposited. Thereafter, an alloy magnetic film was formed on the buffer layer. Others were the same as Example 2.

Film forming conditions for buffer layer (CoxOy) Sputtering method: DC facing target method Target: Co Target size: 100 mmφ Sputtering gas: Ar-O ₂ ; Ar / O ₂ = 11/9
(Sccm ratio) Gas pressure: 1.0 mTorr Cathode power: 0.5 kW Substrate temperature: 300 ° C. Film thickness: 100 nm, 200 nm, 400 n
m, 800 nm, 1.4 μm, 3 μm, 5 μm, 10 μm
m

In this embodiment, the formed buffer layer before the heat treatment is a Co ₃ O ₄ phase, and the buffer layer after the heat treatment is
O phase. After forming the alloy magnetic film, a heat treatment was performed in a high vacuum of 2 × 10 ⁻⁶ Torr at 700 ° C. for 20 minutes, and the results of measuring the magnetic characteristics of the magnetic film were obtained. As shown in FIG. The vertical axis in FIG. 4 is the average magnetic permeability.

As shown in FIG. 4, the buffer layer is made of Co.
In the case of the O phase, there is basically no difference in the magnetic properties of the alloy magnetic film due to the difference in the thickness of the buffer layer. Observation of the microstructure of the buffer layer revealed that as the buffer layer became thicker, the crystal grains of CoO forming the buffer layer became larger, and the buffer layer structure was deteriorated. Therefore, when the buffer layer is a CoO phase, the buffer layer is not thickened more than necessary. Generally, it is 1 μm or less.

On the other hand, when the buffer layer is a Co ₃ O ₄ phase,
When the thickness of the buffer layer was 800 nm or more, peeling was observed in the alloy magnetic film after the heat treatment after the formation of the alloy magnetic film. When the thickness of the buffer layer is 400 nm or less, no difference in the magnetic properties of the alloy magnetic film due to the difference in the thickness of the buffer layer is basically observed. Therefore, the buffer layer is made of Co ₃ O ₄
In the case of a phase, the thickness of the buffer layer is preferably less than 800 nm.

A magnetic head was manufactured from the alloy magnetic film with a substrate of the present embodiment as described with reference to FIGS. 2 and 3, and was used for magnetic recording and reading of information on a magnetic recording medium. It has been confirmed that it works.

[0048]

As described above, according to the present invention,
An alloy magnetic film made of an Fe-MC-based nanocrystalline alloy or an Fe-M-based alloy is coated on an α-Fe ₂ O ₃ substrate by Cox.
Since the oxide film was formed via the buffer layer of Oy, during the heat treatment after the formation of the alloy magnetic film, the reducing power of the magnetic film was relaxed by the buffer layer, and the ferromagnetic F
Generation of e ₃ O ₄ (magnetite) can be prevented.
Therefore, the magnetic interaction with the alloy magnetic film due to the formation of the Fe ₃ O ₄ ferromagnetic layer on the substrate is eliminated,
A high magnetic permeability of a magnetic film of an -MC-based nanocrystalline alloy or an Fe-M-based alloy can be maintained without lowering, and a magnetic film having high saturation magnetization and high magnetic permeability can be obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a layer configuration of an alloy magnetic film with a substrate according to the present invention.

FIG. 2 is a cross-sectional view showing a magnetic film structure when a magnetic head is manufactured using the alloy magnetic film of FIG. 1;

FIG. 3 is a perspective view showing a magnetic head manufactured from the magnetic film structure of FIG. 2;

FIG. 4 is a diagram showing the relationship between the amount of oxygen introduced and the magnetic properties during the formation of an oxygen-rich layer in an example.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 alloy magnetic film 2 buffer layer 3 substrate 3 ′ substrate 4 glass 5 magnetic film structure 10 magnetic head 18, 19 core half 21 gap portion

Claims (14)

[Claims] 1. An Fe-MC-based nanocrystalline alloy (M: I) on a substrate of α-Fe ₂ O ₃ via a buffer layer.
VB group, VB group, IIIA group, IVA group element) or Fe-M
In an alloy magnetic film with a substrate for a magnetic head in which an alloy magnetic film made of a base alloy (M: an element of the IVB group, VB group, IIIA group, or IVA group), the buffer layer is made of CoxOy (where y / x = An alloy magnetic film with a substrate for a magnetic head, which is formed by a numerical value of 1 to 4/3). 2. The alloy magnetic film according to claim 1, wherein CoxOy is CoO. 3. The method of claim 1, wherein CoxOy is Co ₃ O _4.
Alloy magnetic film. 4. The method according to claim 1, wherein the Fe-MC nanocrystalline alloy is Fe-
Si-Al-Hf-Ta-C, Fe-Si-Al-Hf
-C, Fe-Hf-C, Fe-Si-Hf-C and F
The alloy magnetic film according to any one of claims 1 to 3, wherein the alloy magnetic film is one kind selected from the group consisting of e-Si-Hf-Ta-C. 5. The method according to claim 1, wherein the Fe-M alloy is Fe-Si-Al,
1 selected from the group consisting of Fe-Si and Fe-Al
The alloy magnetic film according to claim 1, wherein the alloy magnetic film is an alloy containing a seed as a main component. 6. A buffer layer is formed on a substrate of α-Fe ₂ O ₃ and, if necessary, subjected to a heat treatment, and then a Fe-MC-based nanocrystalline alloy (M: IVB group, VB
Group, IIIA, IVA group) or Fe-M alloy (M: IVB, VB, IIIA, IVA group)
A method of manufacturing an alloy magnetic film with a substrate for a magnetic head in which an alloy magnetic film made of is formed and then further subjected to heat treatment, wherein CoxOy (where y / x = 1) is used as a buffer layer.
A method of manufacturing an alloy magnetic film with a substrate for a magnetic head, comprising forming a layer having a value of ４ to ／. 7. The method according to claim 6, wherein the buffer layer is formed by sputtering under an oxygen gas-containing inert gas having an oxygen content of 30% to 60% in sccm ratio. 8. An Fe—MC—based nanocrystalline alloy comprising:
Si-Al-Hf-Ta-C, Fe-Si-Al-Hf
-C, Fe-Hf-C, Fe-Si-Hf-C and F
The method according to claim 6 or 7, wherein the method is one selected from the group consisting of e-Si-Hf-Ta-C. 9. An Fe-M based alloy comprising: Fe—Si—Al;
1 selected from the group consisting of Fe-Si and Fe-Al
8. The method according to claim 6, wherein the alloy is a seed-based alloy. 10. A magnetic head formed by joining two core halves at a predetermined gap length and joining them, wherein each of said core halves is provided on a substrate of α-Fe ₂ O ₃ with CoxOy (however, y / x = 1 to 4/3), and by stacking through a buffer layer composed of Fe
-MC-based nanocrystalline alloy (where M: IVB group, VB group,
A magnetic head comprising an alloy magnetic film formed of a group IIIA or IVA element) or an Fe-M alloy (where M is a group IVB, VB, IIIA or IVA element). 11. The method of claim 10, wherein CoxOy is CoO.
Magnetic head. 12. The magnetic head according to claim 10, wherein CoxOy is Co ₃ O ₄ . 13. An Fe—MC—based nanocrystalline alloy comprising:
-Si-Al-Hf-Ta-C, Fe-Si-Al-H
1 selected from the group consisting of f-C, Fe-Hf-C, Fe-Si-Hf-C and Fe-Si-Hf-Ta-C
13. The magnetic head of claim 11 or 12, which is a seed. 14. An Fe-M alloy comprising Fe-Si-A
13. An alloy mainly composed of one selected from the group consisting of 1, Fe--Si and Fe--Al.
Magnetic head.