JPH0319298B2 - - Google Patents
Info
- Publication number
- JPH0319298B2 JPH0319298B2 JP59077470A JP7747084A JPH0319298B2 JP H0319298 B2 JPH0319298 B2 JP H0319298B2 JP 59077470 A JP59077470 A JP 59077470A JP 7747084 A JP7747084 A JP 7747084A JP H0319298 B2 JPH0319298 B2 JP H0319298B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- oxide
- tin
- target
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7747084A JPS60221569A (ja) | 1984-04-19 | 1984-04-19 | 電気的蒸着用タ−ゲツト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7747084A JPS60221569A (ja) | 1984-04-19 | 1984-04-19 | 電気的蒸着用タ−ゲツト |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60221569A JPS60221569A (ja) | 1985-11-06 |
| JPH0319298B2 true JPH0319298B2 (enExample) | 1991-03-14 |
Family
ID=13634869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7747084A Granted JPS60221569A (ja) | 1984-04-19 | 1984-04-19 | 電気的蒸着用タ−ゲツト |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60221569A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2680799B1 (fr) * | 1991-09-03 | 1993-10-29 | Elf Aquitaine Ste Nale | Element de cible pour pulverisation cathodique, procede de preparation dudit element et cibles, notamment de grande surface, realisees a partir de cet element. |
| JP3779856B2 (ja) * | 2000-04-10 | 2006-05-31 | 株式会社日鉱マテリアルズ | 光ディスク保護膜形成用スパッタリングターゲット |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5156788A (ja) * | 1974-11-14 | 1976-05-18 | Nichiden Varian Kk | Supatsutasochotaagetsutodenkyoku |
| GB1574007A (en) * | 1975-12-24 | 1980-09-03 | Johnson Matthey Co Ltd | Cermets |
-
1984
- 1984-04-19 JP JP7747084A patent/JPS60221569A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60221569A (ja) | 1985-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100957733B1 (ko) | 산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막 | |
| US2933458A (en) | Electrically conductive glass composition containing suboxides of titanium and method of making the same | |
| KR20080066866A (ko) | 산화 갈륨-산화 아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막 | |
| JPS6115523B2 (enExample) | ||
| JP4175071B2 (ja) | 酸化物焼結体およびスパッタリングターゲット | |
| KR100203671B1 (ko) | 아이티오 소결체,아이티오 투명전도막 및 그 막의 형성방법 | |
| JPH0570943A (ja) | スパツタリングによる透明導電性薄膜形成用高密度焼結ターゲツト材 | |
| US3217281A (en) | Electrical resistor | |
| JPH0319298B2 (enExample) | ||
| JP2008248278A (ja) | SnO2系スパッタリングターゲットおよびスパッタ膜 | |
| JPH0570942A (ja) | スパツタリングによる透明導電性薄膜形成用高密度焼結ターゲツト材 | |
| CN101568665A (zh) | SnO2系溅射靶 | |
| JP3775344B2 (ja) | 酸化物焼結体 | |
| US20080296149A1 (en) | Mixed chromium oxide-chromium metal sputtering target | |
| US3961114A (en) | Glass composition | |
| JP2002275624A (ja) | 透明導電性薄膜形成用焼結体ターゲット、その製造方法、及びそれより得られる透明導電性薄膜 | |
| JPH1068072A (ja) | Itoシリンドリカルターゲットおよびその製造方法 | |
| JP5000230B2 (ja) | 酸化ランタン含有酸化物ターゲット | |
| JP2009504556A (ja) | SiOx:Si複合材料組成物およびその製造方法 | |
| JP3030913B2 (ja) | Ito焼結体の製造方法 | |
| CN113205901A (zh) | 玻璃料、导电浆料及在制备陶瓷介质滤波器电极中应用 | |
| JPH0711433A (ja) | スパッタリング用ターゲットおよびその製造方法 | |
| US7300607B2 (en) | Conductive sintered compact for fixing electrodes in electronic device envelope | |
| JP4218230B2 (ja) | 透明導電膜作製用焼結体ターゲット | |
| JP2004505411A (ja) | 導電性材料で作られた電極を設けたガラスプレート |