JPH0318330B2 - - Google Patents
Info
- Publication number
- JPH0318330B2 JPH0318330B2 JP56086196A JP8619681A JPH0318330B2 JP H0318330 B2 JPH0318330 B2 JP H0318330B2 JP 56086196 A JP56086196 A JP 56086196A JP 8619681 A JP8619681 A JP 8619681A JP H0318330 B2 JPH0318330 B2 JP H0318330B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon single
- single crystal
- semiconductor device
- defects
- defect density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/90—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086196A JPS57201032A (en) | 1981-06-04 | 1981-06-04 | Silicon single crystal semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56086196A JPS57201032A (en) | 1981-06-04 | 1981-06-04 | Silicon single crystal semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57201032A JPS57201032A (en) | 1982-12-09 |
| JPH0318330B2 true JPH0318330B2 (OSRAM) | 1991-03-12 |
Family
ID=13880021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56086196A Granted JPS57201032A (en) | 1981-06-04 | 1981-06-04 | Silicon single crystal semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201032A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6031231A (ja) * | 1983-07-29 | 1985-02-18 | Toshiba Corp | 半導体基体の製造方法 |
| US4868133A (en) * | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
| US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
-
1981
- 1981-06-04 JP JP56086196A patent/JPS57201032A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57201032A (en) | 1982-12-09 |
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