JPH0318275B2 - - Google Patents

Info

Publication number
JPH0318275B2
JPH0318275B2 JP1730282A JP1730282A JPH0318275B2 JP H0318275 B2 JPH0318275 B2 JP H0318275B2 JP 1730282 A JP1730282 A JP 1730282A JP 1730282 A JP1730282 A JP 1730282A JP H0318275 B2 JPH0318275 B2 JP H0318275B2
Authority
JP
Japan
Prior art keywords
transistor
data
memory cell
dummy
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1730282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58137181A (ja
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57017302A priority Critical patent/JPS58137181A/ja
Publication of JPS58137181A publication Critical patent/JPS58137181A/ja
Publication of JPH0318275B2 publication Critical patent/JPH0318275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP57017302A 1982-02-05 1982-02-05 半導体メモリ Granted JPS58137181A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57017302A JPS58137181A (ja) 1982-02-05 1982-02-05 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57017302A JPS58137181A (ja) 1982-02-05 1982-02-05 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS58137181A JPS58137181A (ja) 1983-08-15
JPH0318275B2 true JPH0318275B2 (de) 1991-03-12

Family

ID=11940204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57017302A Granted JPS58137181A (ja) 1982-02-05 1982-02-05 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS58137181A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136088A (ja) * 1983-12-23 1985-07-19 Hitachi Ltd 半導体多値記憶装置
JPS61117796A (ja) * 1984-11-13 1986-06-05 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置
FR2630573B1 (fr) * 1988-04-26 1990-07-13 Sgs Thomson Microelectronics Memoire programmable electriquement avec plusieurs bits d'information par cellule
JP2002260391A (ja) * 2001-03-02 2002-09-13 Hitachi Ltd 半導体記憶装置及びその読み出し方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381024A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Semiconductor memory divice
JPS54162934A (en) * 1978-06-13 1979-12-25 Ibm Read only memory
JPS5580888A (en) * 1978-12-12 1980-06-18 Nippon Telegr & Teleph Corp <Ntt> Read only memory circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381024A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Semiconductor memory divice
JPS54162934A (en) * 1978-06-13 1979-12-25 Ibm Read only memory
JPS5580888A (en) * 1978-12-12 1980-06-18 Nippon Telegr & Teleph Corp <Ntt> Read only memory circuit

Also Published As

Publication number Publication date
JPS58137181A (ja) 1983-08-15

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