JPH03166379A - 被膜形成方法 - Google Patents
被膜形成方法Info
- Publication number
- JPH03166379A JPH03166379A JP14506890A JP14506890A JPH03166379A JP H03166379 A JPH03166379 A JP H03166379A JP 14506890 A JP14506890 A JP 14506890A JP 14506890 A JP14506890 A JP 14506890A JP H03166379 A JPH03166379 A JP H03166379A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic field
- substrate
- gas
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14506890A JPH03166379A (ja) | 1990-06-01 | 1990-06-01 | 被膜形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14506890A JPH03166379A (ja) | 1990-06-01 | 1990-06-01 | 被膜形成方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61266834A Division JPS63121667A (ja) | 1986-11-10 | 1986-11-10 | 薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03166379A true JPH03166379A (ja) | 1991-07-18 |
JPH0543793B2 JPH0543793B2 (enrdf_load_stackoverflow) | 1993-07-02 |
Family
ID=15376641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14506890A Granted JPH03166379A (ja) | 1990-06-01 | 1990-06-01 | 被膜形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03166379A (enrdf_load_stackoverflow) |
-
1990
- 1990-06-01 JP JP14506890A patent/JPH03166379A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0543793B2 (enrdf_load_stackoverflow) | 1993-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |