JPH03166379A - 被膜形成方法 - Google Patents

被膜形成方法

Info

Publication number
JPH03166379A
JPH03166379A JP14506890A JP14506890A JPH03166379A JP H03166379 A JPH03166379 A JP H03166379A JP 14506890 A JP14506890 A JP 14506890A JP 14506890 A JP14506890 A JP 14506890A JP H03166379 A JPH03166379 A JP H03166379A
Authority
JP
Japan
Prior art keywords
film
magnetic field
substrate
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14506890A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543793B2 (enrdf_load_stackoverflow
Inventor
Takashi Inushima
犬島 喬
Naoki Hirose
直樹 広瀬
Mamoru Tashiro
田代 衛
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP14506890A priority Critical patent/JPH03166379A/ja
Publication of JPH03166379A publication Critical patent/JPH03166379A/ja
Publication of JPH0543793B2 publication Critical patent/JPH0543793B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP14506890A 1990-06-01 1990-06-01 被膜形成方法 Granted JPH03166379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14506890A JPH03166379A (ja) 1990-06-01 1990-06-01 被膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14506890A JPH03166379A (ja) 1990-06-01 1990-06-01 被膜形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP61266834A Division JPS63121667A (ja) 1986-11-10 1986-11-10 薄膜形成装置

Publications (2)

Publication Number Publication Date
JPH03166379A true JPH03166379A (ja) 1991-07-18
JPH0543793B2 JPH0543793B2 (enrdf_load_stackoverflow) 1993-07-02

Family

ID=15376641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14506890A Granted JPH03166379A (ja) 1990-06-01 1990-06-01 被膜形成方法

Country Status (1)

Country Link
JP (1) JPH03166379A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0543793B2 (enrdf_load_stackoverflow) 1993-07-02

Similar Documents

Publication Publication Date Title
JPH01191780A (ja) 薄膜形成装置
JPH0672306B2 (ja) プラズマ処理装置およびプラズマ処理方法
KR900008505B1 (ko) 탄소 석출을 위한 마이크로파 강화 cvd 방법
US4481229A (en) Method for growing silicon-including film by employing plasma deposition
JPS63210275A (ja) プラズマ反応装置内を清浄にする方法
KR100325500B1 (ko) 반도체 박막의 제조 방법 및 그 장치
JP2965935B2 (ja) プラズマcvd方法
JPS63121667A (ja) 薄膜形成装置
US5366586A (en) Plasma formation using electron cyclotron resonance and method for processing substrate by using the same
JPS63145782A (ja) 薄膜形成方法
JPH0543792B2 (enrdf_load_stackoverflow)
US5270029A (en) Carbon substance and its manufacturing method
JPH03166379A (ja) 被膜形成方法
JP2660244B2 (ja) 表面処理方法
JPH03122266A (ja) 窒化物薄膜の製造方法
JP3445657B2 (ja) ダイヤモンド薄膜のecrプラズマエッチング方法
JP2739286B2 (ja) プラズマ処理方法
JP2715277B2 (ja) 薄膜形成装置
JP2892347B2 (ja) 薄膜形成方法
JP2769977B2 (ja) プラズマ処理方法
JP2899254B2 (ja) プラズマcvd装置
JP2617539B2 (ja) 立方晶窒化ほう素膜の製造装置
JPS63169387A (ja) 薄膜形成方法
JPH031377B2 (enrdf_load_stackoverflow)
JPH0672307B2 (ja) プラズマ処理装置およびプラズマ処理方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term