JPH0314288A - Packaging of resin sealed semiconductor device - Google Patents
Packaging of resin sealed semiconductor deviceInfo
- Publication number
- JPH0314288A JPH0314288A JP15163489A JP15163489A JPH0314288A JP H0314288 A JPH0314288 A JP H0314288A JP 15163489 A JP15163489 A JP 15163489A JP 15163489 A JP15163489 A JP 15163489A JP H0314288 A JPH0314288 A JP H0314288A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- sealed
- sealed semiconductor
- aluminum plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000011347 resin Substances 0.000 title abstract description 21
- 229920005989 resin Polymers 0.000 title abstract description 21
- 238000004806 packaging method and process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 238000005476 soldering Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置の実装方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for mounting a resin-sealed semiconductor device.
従来、樹脂封止型半導体装置の実装方法としては、第３
図に示すように実装基板３１上に樹脂封止型半導体装置
を載せて赤外線リフロー炉３５を通し、半田イ」部３７
により外部り−１−３４と実装基板３１の配線３３とを
接続するという方法が主に用いられている。Conventionally, the third mounting method for resin-sealed semiconductor devices has been
As shown in the figure, a resin-sealed semiconductor device is placed on a mounting board 31, passed through an infrared reflow oven 35, and soldered at a soldering hole 37.
A method is mainly used in which the external wire 1-34 and the wiring 33 of the mounting board 31 are connected by using the following method.
上述した従来の樹脂封止型半導体装置は、金属ワイヤー
により半導体素子とり一トフレームとか電気的に接続さ
れた後、樹脂により封止されている。近年半導体装置の
配線基板への実効方法としては、気相半田付法や赤外線
リフロー法か取り入れらでいるか、この方法における熱
ストレスにより金属ワイヤーとリードフレームとの接合
部や封止した樹脂にクラックが発生し、信頼性上−重大
な問題になっている。In the conventional resin-sealed semiconductor device described above, the semiconductor element is electrically connected to a frame or the like using a metal wire, and then the device is sealed with resin. In recent years, effective methods for attaching wiring boards to semiconductor devices include vapor phase soldering and infrared reflow.The heat stress caused by these methods can cause cracks in the joints between metal wires and lead frames, as well as in the encapsulating resin. This has become a serious problem in terms of reliability.
このクラックの発生メカニスムとしては、基板実装時の
加熱により半導体全体が２１０℃〜２６０°Ｃ程度の高
温に急激にさらされ、樹脂のカラス転移点（１−６０℃
前後）を越えてしまい樹脂の熱膨張率が急激に大きくな
ってしまう為樹脂が変形すると考えられている。The mechanism by which this crack occurs is that the entire semiconductor is rapidly exposed to high temperatures of approximately 210°C to 260°C due to heating during board mounting, and the glass transition point of the resin (1-60°C
It is thought that the resin deforms because the coefficient of thermal expansion of the resin suddenly increases when the temperature exceeds the value (before and after).
本発明の樹脂封止型半導体装置用の実装方法は、実装基
板上に樹脂封止型半導体装置を位置合ぜして載せたのち
、この樹脂封止型半導体装置の上面に金属板を載せて赤
外線リフロー炉を通すものである。The mounting method for a resin-sealed semiconductor device of the present invention includes aligning and mounting the resin-sealed semiconductor device on a mounting board, and then placing a metal plate on top of the resin-sealed semiconductor device. It is passed through an infrared reflow oven.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例を説明するための実装基
板と半導体装置の側面図である。FIG. 1 is a side view of a mounting board and a semiconductor device for explaining a first embodiment of the present invention.
まず実装基板］］上の半田付部１７に半導体装置の外部
リート１４を位置合せして置く。その後封入樹脂部１６
の上面に厚さ１．５〜２．０關のアルミ板１２を載せ赤
外線リフロー炉１５を通し、外部リード１４と半田付部
１７とを接合する。First, the external lead 14 of the semiconductor device is aligned and placed on the soldering portion 17 on the mounting board. After that, the sealed resin part 16
An aluminum plate 12 with a thickness of about 1.5 to 2.0 mm is placed on the top surface and passed through an infrared reflow oven 15 to join the external leads 14 and the soldering portions 17.
第１の実施例によれば、半導体装置上にアルミ板が載せ
られているため、封入樹脂１６は急激に加熱されること
はなくなるため、クラックの発生は抑制される。次に試
作評価を説明する。According to the first embodiment, since the aluminum plate is placed on the semiconductor device, the encapsulating resin 16 is not heated rapidly, so the occurrence of cracks is suppressed. Next, we will explain the prototype evaluation.
まず、樹脂封止型半導体装置を温度サイクル（−６０’
Ｃ−＋１５０°Ｃ）及び加湿（８５°Ｃ８５％）を行っ
た。その後、実装基板への実装方法である赤外線リフロ
ー（２１０℃〜２６０℃）条件で急加熱を行ない金属ワ
イヤーと内部リードの接合部及び樹脂断面を観察した結
果、従来技術の実装方法では８０％の確率で金属ワイヤ
ーにクラックが発生又１００％確率で樹脂クラックが発
生していたが、本実施例の実装方法では金属ワイヤー及
び樹脂のクラック発生率は０％であった。First, the resin-sealed semiconductor device was subjected to a temperature cycle (-60'
C-+150°C) and humidification (85°C, 85%). After that, we performed rapid heating under infrared reflow (210°C to 260°C) conditions, which is the mounting method for mounting on the mounting board, and observed the joints between the metal wire and internal leads and the cross section of the resin. There was a probability that a crack would occur in the metal wire and a resin crack would occur with a 100% probability, but in the mounting method of this example, the crack occurrence rate in the metal wire and resin was 0%.
第２図は本発明の第２の実施例を説明するための実装基
板と半導体装置の側面図である。FIG. 2 is a side view of a mounting board and a semiconductor device for explaining a second embodiment of the present invention.
この第２の実施例と前述の第１の実施例と異なる点は、
樹脂封止型半導体装置の封入樹脂２６の上面に載せる厚
さ１．５〜２．０ｍｍのアルミ板２２の縁にズレ防止用
のストッパーを付けたところにある。The difference between this second embodiment and the first embodiment described above is as follows.
A stopper for preventing slippage is attached to the edge of an aluminum plate 22 having a thickness of 1.5 to 2.0 mm, which is placed on the upper surface of the encapsulating resin 26 of the resin-sealed semiconductor device.
この第２の実施例では、アルミ板２２の縁にズレ防止用
ストッパーを付けることにより、赤外線リフロー時の樹
脂部２６のアルミ板２２とのズレを防止できる利点があ
る。This second embodiment has the advantage that by attaching a stopper for preventing displacement to the edge of the aluminum plate 22, it is possible to prevent the resin part 26 from being displaced from the aluminum plate 22 during infrared reflow.
尚、上記実施例においては金属板としてアルミ板を用い
た場合について説明したが、銅板やステンレス板等を用
いてもよい。In the above embodiment, an aluminum plate is used as the metal plate, but a copper plate, a stainless steel plate, etc. may also be used.
以上説明したように、本発明は、樹脂封止型半導体装置
の］二面に金属板を載せて、赤外線リフロー炉を通すこ
とにより、封入樹脂にががる熱ストレスを緩和できる為
、樹脂クラックを防止できる。又金属ワイヤーと内部リ
ードの接合部にかかる樹脂の熱ストレスも緩和される為
、ワイヤークラックを防止できる効果がある。As explained above, in the present invention, by placing a metal plate on two sides of a resin-sealed semiconductor device and passing it through an infrared reflow oven, it is possible to alleviate the thermal stress that causes the encapsulated resin to crack. can be prevented. Furthermore, the thermal stress applied to the resin at the joint between the metal wire and the internal lead is also alleviated, which has the effect of preventing wire cracks.
フロー炉、１６．２６．３６・・・封入樹脂、１７２７
．３７・・・半田付部。Flow furnace, 16.26.36... Encapsulation resin, 1727
．． 37...Soldering part.
Claims (1)
せたのち、この樹脂封止型半導体装置の上面に金属板を
載せて赤外線リフロー炉を通すことを特徴とする樹脂封
止型半導体装置の実装方法。A resin-sealed semiconductor device characterized in that after aligning and mounting the resin-sealed semiconductor device on a mounting board, a metal plate is placed on top of the resin-sealed semiconductor device and the device is passed through an infrared reflow oven. How to implement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15163489A JPH0314288A (en) | 1989-06-13 | 1989-06-13 | Packaging of resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15163489A JPH0314288A (en) | 1989-06-13 | 1989-06-13 | Packaging of resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0314288A true JPH0314288A (en) | 1991-01-22 |
Family
ID=15522833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15163489A Pending JPH0314288A (en) | 1989-06-13 | 1989-06-13 | Packaging of resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0314288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6499215B1 (en) * | 2000-06-29 | 2002-12-31 | International Business Machines Corporation | Processing of circuit boards with protective, adhesive-less covers on area array bonding sites |
-
1989
- 1989-06-13 JP JP15163489A patent/JPH0314288A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6499215B1 (en) * | 2000-06-29 | 2002-12-31 | International Business Machines Corporation | Processing of circuit boards with protective, adhesive-less covers on area array bonding sites |
| US6700068B2 (en) | 2000-06-29 | 2004-03-02 | International Business Machines Corporation | Adhesive-less cover on area array bonding site of circuit board |
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