JPS598365Y2 - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS598365Y2 JPS598365Y2 JP1979010523U JP1052379U JPS598365Y2 JP S598365 Y2 JPS598365 Y2 JP S598365Y2 JP 1979010523 U JP1979010523 U JP 1979010523U JP 1052379 U JP1052379 U JP 1052379U JP S598365 Y2 JPS598365 Y2 JP S598365Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- element piece
- cap
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Description
【考案の詳細な説明】
本考案はフェースダウンボンド方式の半導体素子片を一
個又は複数個搭載せしめてなる半導体装置の改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a semiconductor device in which one or more face-down bond type semiconductor element pieces are mounted.
従来フェースダウンボンド方式の半導体素子片を一個又
は複数個搭載せしめてなる半導体装置に於いては、各々
の半導体素子片の裏面が直かにパッケージ内に封入され
た構造を有していたので、半導体素子片が故障した場合
にはその半導体素子片のみを交換することができず、半
導体装置自体を回路から取りはずし交換せねばならなか
ったために膨大な配線の脱着が必要となり多額の補修費
を用する等の問題があった。Conventional semiconductor devices mounted with one or more face-down bonding semiconductor chips had a structure in which the back side of each semiconductor chip was directly encapsulated within the package. When a semiconductor chip breaks down, it is not possible to replace just the semiconductor chip, and the semiconductor device itself has to be removed from the circuit and replaced, which requires a huge amount of wiring to be connected and removed, resulting in large repair costs. There were problems such as
本考案は上記問題点に鑑み、半導体素子片の故障に際し
て、半導体装置を回路から取りはずすことなく故障した
半導体素子片のみを交換し得るごとき構造を有せしめて
なる、フェースダウンボンド方式の半導体装置を提供す
るものである。In view of the above-mentioned problems, the present invention provides a face-down bond type semiconductor device having a structure that allows only the failed semiconductor chip to be replaced without removing the semiconductor device from the circuit when the semiconductor chip fails. This is what we provide.
即ち本考案はセラミックステムに搭載されたフェースダ
ウンボンド方式の半導体素子片にろう付けされた放熱柱
が貫通するキャップの孔部を、前記半導体素子片が通過
する大きさに形或したことを特徴とする。That is, the present invention is characterized in that the hole in the cap, through which the heat dissipation column soldered to the face-down bond type semiconductor element piece mounted on the ceramic stem passes, is shaped to a size that allows the semiconductor element piece to pass through. shall be.
以下本考案を図に示した実施例により詳細に説明する。The present invention will be explained in detail below with reference to embodiments shown in the drawings.
図は本考案によるフェースダウンボンド方式の半導体素
子片を複数個搭載せしめてなる半導体装置の一実施例の
一断面を示したものである。The figure shows a cross section of an embodiment of a semiconductor device in which a plurality of face-down bond type semiconductor element pieces according to the present invention are mounted.
即ち該半導体装置は、内部に多層配線（図示せず）を有
し、上面に表面配線１を側面に複数個の外部リード２を
有し、上面周囲には絶縁ガラス枠３と該ガラス枠３上に
ケーシング用金属枠４を有するセラミック等の耐熱性絶
縁物の積層基板５よりなる矢印で示したセラミックステ
ム６の前記所定表面配線１上に背面金属膜７を有せしめ
たフェースダウンボンド方式の半導体素子片８が該半導
体素子片８の表面のバンプ状電極９により固着せしめら
れ、該セラミックステム６上にはセラミック等の耐熱性
絶縁物よりなるキャップ１０が被せられ、該キャップは
その開口部に形威されたケーシング用メタライズ部１１
ａを介して４５０〜５００℃の溶着温度を有するＡｕ
−Ｓｎ ，Ｚｎ−Ｓｎ等のケーシング用ろう材１２によ
り前記セラミックステム６周囲のケーシング用金属枠４
とろう付けされており、該キャップ１０の前記セラミッ
クステム６上に搭載されている半導体素子片８の各々の
真上にあたる位置には半導体素子片８の交換が可能なよ
うに半導体素子片８の対角線長より僅かに大きい直径を
有せしめた放熱柱挿入孔１１が、又該挿入孔周囲の表面
には密封用メタライズ部１３が形或されている。That is, the semiconductor device has multilayer wiring (not shown) inside, has surface wiring 1 on the top surface, a plurality of external leads 2 on the side surfaces, and has an insulating glass frame 3 and the glass frame 3 around the top surface. This is a face-down bond type in which a rear metal film 7 is provided on the predetermined surface wiring 1 of a ceramic stem 6 indicated by an arrow, which is made of a laminated substrate 5 made of a heat-resistant insulator such as ceramic and has a metal frame 4 for a casing thereon. A semiconductor element piece 8 is fixed by a bump-shaped electrode 9 on the surface of the semiconductor element piece 8, and a cap 10 made of a heat-resistant insulator such as ceramic is placed on the ceramic stem 6, and the cap has an opening. Metallized part 11 for casing shaped like
Au with a welding temperature of 450-500 °C via a
- The metal frame 4 for the casing around the ceramic stem 6 is formed by the brazing filler metal 12 for the casing such as Sn, Zn-Sn, etc.
The cap 10 has a semiconductor element piece 8 directly above each semiconductor element piece 8 mounted on the ceramic stem 6 so that the semiconductor element piece 8 can be replaced. A heat dissipation column insertion hole 11 having a diameter slightly larger than the diagonal length is formed, and a sealing metallized portion 13 is formed on the surface around the insertion hole.
然して該キャップ１０の各放熱柱挿入孔１１には一端に
垂直切断面からなる挿入側端面１４を他端にフィン状形
或部１５を有しキャップ貫通部の直径を前記放熱柱挿入
孔１１の径よりやや小さく形或せしめた熱伝導性の良い
金属等よりなる放熱柱１６が挿入せしめられ、該放熱柱
の挿入側端面１４は前記搭載半導体素子片８と該半導体
素子片８に形或されている背面金属膜７を介して
３００〜３５０℃の溶着温度を有するＰｂ−Ｓｎ系の接
続用ろう材１７で接続せしめられ、然して該放熱柱１６
のキャップ貫通部は前記キャップ１０の放熱柱挿入孔１
１の周囲表面に形威されている密封用メタライス部１３
に対して３００〜３５０℃の溶着温度を有する前記接続
用ろう材と同種の密封用ろう材１８によりろう付けされ
、該ろう付けにより容器内を密封せしめられてなる構造
を有している。Each heat dissipation column insertion hole 11 of the cap 10 has an insertion side end surface 14 consisting of a vertically cut surface at one end and a fin-shaped portion 15 at the other end, and the diameter of the cap penetrating portion is set to the diameter of the heat dissipation column insertion hole 11. A heat dissipation column 16 made of metal or the like with good thermal conductivity and shaped to be slightly smaller than the diameter is inserted, and the insertion side end surface 14 of the heat dissipation column is shaped between the mounted semiconductor element piece 8 and the semiconductor element piece 8. The heat dissipating column 16
The cap penetrating portion is the heat dissipation column insertion hole 1 of the cap 10.
A sealing metal rice portion 13 formed on the peripheral surface of 1
The container is brazed with a sealing brazing material 18 of the same type as the connecting brazing material having a welding temperature of 300 to 350 DEG C., and the inside of the container is sealed by the brazing.
上記実施例に於いてはセラミックステムに対するセラミ
ックキャップの接合がろう材によりなされている構造の
半導体装置について説明したが、本考案の構造は該接合
が低融点ガラスでなされる半導体装置及び金属キャップ
を有する半導体装置についても適用可能である。In the above embodiment, a semiconductor device having a structure in which the ceramic cap is bonded to the ceramic stem using a brazing material has been described, but the structure of the present invention is applicable to a semiconductor device and a metal cap in which the bond is made using low melting point glass. It is also applicable to semiconductor devices having the following.
以上説明したように本考案の構造を有せしめたフェース
ダウンボンド方式の半導体装置は、該半導体装置内に搭
載されている半導体素子片の背面が直かに放熱フィンを
有する放熱性にろう付けされているので、通常のフェー
スアップ方式に劣らない高出力の半導体装置を可能にす
ると同時に、半導体素子片の故障に際して半導体装置を
回路に固定したまま放熱柱を取りはずして故障した半導
体素子片のみを交換し得るごとき構造を有せしめてある
ので、従来の様に膨大な配線をはずして半導体装置の交
換を行う必要がなく、半導体素子片の故障によるセット
の補修費用を大幅に削減し得て、その実用的効果は著し
い。As explained above, in the face-down bond type semiconductor device having the structure of the present invention, the back surface of the semiconductor element piece mounted in the semiconductor device is directly brazed to a heat dissipating member having heat dissipating fins. This makes it possible to create high-output semiconductor devices that are comparable to the normal face-up method, and at the same time, in the event of a semiconductor chip failure, the heat dissipation pillar can be removed while the semiconductor device is fixed to the circuit and only the failed semiconductor chip can be replaced. Because it has a structure that allows it to be replaced, there is no need to remove a huge amount of wiring and replace the semiconductor device as in the past, and the cost of repairing a set due to failure of a semiconductor element piece can be greatly reduced. The practical effects are significant.
図は本考案によるフェースダウンボンド方式の半導体素
子片を複数個搭載せしめてなる半導体装置の一実施例の
一断面図である。
図において、６はセラミックステム、８は半導体素子片
、９はバンプ電極、１０はキャップ、１１は放熱柱挿入
孔、１４は挿入側端面、１５はフィン状形威部、１６は
放熱柱、１７は接続用ろう材、１８は密封用ろう材。The figure is a sectional view of an embodiment of a semiconductor device in which a plurality of face-down bond type semiconductor element pieces according to the present invention are mounted. In the figure, 6 is a ceramic stem, 8 is a semiconductor element piece, 9 is a bump electrode, 10 is a cap, 11 is a heat radiation column insertion hole, 14 is an insertion side end surface, 15 is a fin-shaped part, 16 is a heat radiation column, 17 18 is a brazing material for connection, and 18 is a brazing material for sealing.
Claims (1)
方式の半導体素子片にろう付けされた放熱柱が貫通する
キャップの孔部を、前記半導体素子片が通過する大きさ
に形或したことを特徴とする半導体装置。A semiconductor device characterized in that a hole in a cap through which a heat dissipation column soldered to a face-down bond type semiconductor element piece mounted on a ceramic system passes through is shaped to a size that allows the semiconductor element piece to pass through. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979010523U JPS598365Y2 (en) | 1979-01-30 | 1979-01-30 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979010523U JPS598365Y2 (en) | 1979-01-30 | 1979-01-30 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55115059U JPS55115059U (en) | 1980-08-13 |
| JPS598365Y2 true JPS598365Y2 (en) | 1984-03-15 |
Family
ID=28823274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979010523U Expired JPS598365Y2 (en) | 1979-01-30 | 1979-01-30 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS598365Y2 (en) |
-
1979
- 1979-01-30 JP JP1979010523U patent/JPS598365Y2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55115059U (en) | 1980-08-13 |
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