JPH031377B2 - - Google Patents

Info

Publication number
JPH031377B2
JPH031377B2 JP18582785A JP18582785A JPH031377B2 JP H031377 B2 JPH031377 B2 JP H031377B2 JP 18582785 A JP18582785 A JP 18582785A JP 18582785 A JP18582785 A JP 18582785A JP H031377 B2 JPH031377 B2 JP H031377B2
Authority
JP
Japan
Prior art keywords
cubic boron
film
reaction gas
gas introduction
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18582785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6247472A (ja
Inventor
Kazuhiro Watanabe
Ichiro Tanaka
Kazuya Saito
Konosuke Inagawa
Akio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP18582785A priority Critical patent/JPS6247472A/ja
Publication of JPS6247472A publication Critical patent/JPS6247472A/ja
Publication of JPH031377B2 publication Critical patent/JPH031377B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
JP18582785A 1985-08-26 1985-08-26 立方晶チツ化ホウ素膜の形成方法 Granted JPS6247472A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18582785A JPS6247472A (ja) 1985-08-26 1985-08-26 立方晶チツ化ホウ素膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18582785A JPS6247472A (ja) 1985-08-26 1985-08-26 立方晶チツ化ホウ素膜の形成方法

Publications (2)

Publication Number Publication Date
JPS6247472A JPS6247472A (ja) 1987-03-02
JPH031377B2 true JPH031377B2 (it) 1991-01-10

Family

ID=16177565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18582785A Granted JPS6247472A (ja) 1985-08-26 1985-08-26 立方晶チツ化ホウ素膜の形成方法

Country Status (1)

Country Link
JP (1) JPS6247472A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5277939A (en) * 1987-02-10 1994-01-11 Semiconductor Energy Laboratory Co., Ltd. ECR CVD method for forming BN films
JPS63274762A (ja) * 1987-05-01 1988-11-11 Ulvac Corp 反応蒸着膜の形成装置
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
EP0450125B1 (de) * 1990-04-06 1994-10-26 Siemens Aktiengesellschaft Verfahren zur Herstellung von mikrokristallin kubischen Bornitridschichten

Also Published As

Publication number Publication date
JPS6247472A (ja) 1987-03-02

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