JPH03127867A - Photovoltaic device and manufacture thereof - Google Patents
Photovoltaic device and manufacture thereofInfo
- Publication number
- JPH03127867A JPH03127867A JP1266967A JP26696789A JPH03127867A JP H03127867 A JPH03127867 A JP H03127867A JP 1266967 A JP1266967 A JP 1266967A JP 26696789 A JP26696789 A JP 26696789A JP H03127867 A JPH03127867 A JP H03127867A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- insulator
- photovoltaic device
- transparent electrode
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims description 58
- 239000012212 insulator Substances 0.000 claims description 40
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 3
- 230000004927 fusion Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は複数の光電変換素子を直列接続してなる光起電
力装置及びその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photovoltaic device formed by connecting a plurality of photoelectric conversion elements in series, and a method for manufacturing the same.
透光性絶縁基板上に透明電極、非晶質半導体層裏面電極
をこの順に積層形成した光電変換素子を電気的に直列接
続させた構成をなし、光照射により起電力を発生する光
起電力装置が一般的に良く知られている。A photovoltaic device that has a configuration in which photoelectric conversion elements are electrically connected in series, in which a transparent electrode and an amorphous semiconductor layer back electrode are laminated in this order on a transparent insulating substrate, and that generates an electromotive force when irradiated with light. is generally well known.
第５図は、例えば特開昭６２−８８３７１号公報に開示
されたこのような光起電力装置の断面構造図である。図
において１１はガラス等を用いた透光性絶縁基板であり
、該透光性絶縁基板１１」二には複数の光電変換素子Ａ
、Ｂ、・・・が設けられており、これらの光電変換素子
は電気的に直列に接続されている。FIG. 5 is a cross-sectional structural diagram of such a photovoltaic device disclosed in, for example, Japanese Patent Laid-Open No. 62-88371. In the figure, reference numeral 11 denotes a light-transmitting insulating substrate made of glass or the like, and the light-transmitting insulating substrate 11''2 has a plurality of photoelectric conversion elements A.
, B, . . . are provided, and these photoelectric conversion elements are electrically connected in series.
各光電変換素子Ａ （Ｂ）は、透明電極１２ａ（１２ｂ
）非晶質半導体層１３ａ（１３ｂ）、裏面電極１４ａ（
１４ｂ）をこの順に積層した構成をなず。各光電変換素
子（第５図では素子Ｂについてのみ図示）Ｂの透明電極
１２ｂ−側縁近傍には、隣合う光電変換素子Ａ、 Ｂを
分離するための分離＃１７を挟んで、条状の導電体１５
及び絶縁体１６が並列形成されている。隣合う光電変換
素子Ａ、Ｂにおいて、素子Ａの裏面電極１４ａは導電体
１５を介して素子Ｂの透明電極１２ｂに接続されており
、このような接続により、複数の光電変換素子Ａ、
Ｂ、・・・が電気的に直列に接続されている。また、各
光電変換素子Ｂにおいて、透明電極１２ｂと裏面電極］
、４ｂとの間には絶縁体１６が介在してあり、両者は電
気的に分離されている。Each photoelectric conversion element A (B) has a transparent electrode 12a (12b).
) Amorphous semiconductor layer 13a (13b), back electrode 14a (
14b) are laminated in this order. In the vicinity of the side edge of the transparent electrode 12b of each photoelectric conversion element (only element B is shown in FIG. 5), a strip-shaped strip is placed in between the separation #17 for separating the adjacent photoelectric conversion elements A and B. Conductor 15
and an insulator 16 are formed in parallel. In adjacent photoelectric conversion elements A and B, the back electrode 14a of element A is connected to the transparent electrode 12b of element B via a conductor 15, and due to this connection, a plurality of photoelectric conversion elements A,
B, . . . are electrically connected in series. In addition, in each photoelectric conversion element B, the transparent electrode 12b and the back electrode]
, 4b, an insulator 16 is interposed between the two and electrically isolated from each other.
次にこのような構成を有する光起電力装置の製造手順に
ついて、その工程を模式的に示す第６図に基づき説明す
る。Next, the manufacturing procedure of a photovoltaic device having such a configuration will be explained based on FIG. 6, which schematically shows the process.
まず、透光性絶縁基板１１上に透明電極１２ａ、 １２
ｂをパターン形威し、各透明電極１２ｂの一側縁近傍に
、条状の導電体１５と、これと接した条状の絶縁体１６
とを並列形成する（第６図（ａ））。次いで、全域にわ
たって、非晶質半導体層１３．裏面電極１４をこの順に
積層形成した後、導電体１５と絶縁体１６との境界領域
にレーザビームＬＢを照射する（第６図（ｂ））。そう
すると、非晶質半導体層１３、裏面電極１４は各光電変
換素子Ａ、Ｂ毎に、非晶質半導体層１３ａ、 １３ｂ、
裏面電極１４ａ、 １４ｂに分離され、分離溝１７近傍
における裏面電極１４ａ １．４ｂは、レーザビームＬ
Ｂの熱により溶融されて垂れ下がり、裏面電極１４ａは
導電体１５」二に、また裏面電極Ｍｂは絶縁体１６上に
夫々接触状態にて固化され、第５図に示すような光起電
力装置が製造される。First, transparent electrodes 12a, 12 are placed on a transparent insulating substrate 11.
A strip-shaped conductor 15 and a strip-shaped insulator 16 in contact with the conductor 15 are formed in the vicinity of one side edge of each transparent electrode 12b.
are formed in parallel (FIG. 6(a)). Next, the amorphous semiconductor layer 13. is formed over the entire area. After the back electrodes 14 are laminated in this order, the boundary region between the conductor 15 and the insulator 16 is irradiated with a laser beam LB (FIG. 6(b)). Then, the amorphous semiconductor layer 13 and the back electrode 14 are amorphous semiconductor layers 13a, 13b,
The back electrodes 14a and 14b are separated into back electrodes 14a and 14b, and the back electrodes 14a and 1.4b near the separation groove 17 receive the laser beam L.
The back electrode 14a is melted by the heat of B and hangs down, and the back electrode 14a is solidified in contact with the conductor 15''2, and the back electrode Mb is in contact with the insulator 16, thereby forming a photovoltaic device as shown in FIG. Manufactured.
ところで、上述した従来の製造工程において、導電体１
５．絶縁体１６を形成する手順としては、スクリーン印
刷法を用いて導電性ペースト、絶縁性ペーストを塗布し
た後これらを焼結する方法が一般的である。従って、中
央部に比べて両端部ではその膜厚が薄くなることは必然
であり、両者の境界領域においては両者共その膜厚は薄
くなっている。一方、照射するレーザビームは、−船釣
にその照射面においてガウシアン強度分布を有しており
、照射領域の中央部では周辺部に比べてその強度は大き
い。By the way, in the conventional manufacturing process described above, the conductor 1
5. A common procedure for forming the insulator 16 is to apply a conductive paste and an insulating paste using a screen printing method and then sinter them. Therefore, it is inevitable that the film thickness is thinner at both end portions than at the center portion, and the film thickness is thinner in both boundary regions. On the other hand, the irradiated laser beam has a Gaussian intensity distribution on its irradiation surface, and the intensity is greater in the center of the irradiation area than in the peripheral areas.
このような事情により、導電体１５．絶縁体１６の境界
領域にあってはこれらの膜厚が薄いにも拘わらず、高エ
ネルギのレーザビームが照射されるので、この領域の導
電体１５．絶縁体１６は短時間にて除去され、これらの
下方の透明電極１２ｂも除去されることがある。この結
果、分離溝１７が透明電極１２ｂまで到達して透明電極
１２ｂの一部が除去されて、素子間の直列抵抗が増加し
て出力特性が劣化することになり、ひどい場合には、透
明電極１２ｂが完全に切断されて、素子間の直列接続が
断線されることもある。Due to these circumstances, the conductor 15. Although the boundary regions of the insulators 16 are thin, the high-energy laser beam is irradiated, so that the conductors 15. The insulator 16 is removed in a short time, and the transparent electrode 12b below it may also be removed. As a result, the separation groove 17 reaches the transparent electrode 12b and a part of the transparent electrode 12b is removed, increasing the series resistance between the elements and deteriorating the output characteristics. 12b may be completely disconnected, breaking the series connection between the elements.
本発明はかかる事情に鑑みてなされたものであり、絶縁
体に導電体を部分的に重畳しておき、その重畳部分にレ
ーザビームを照射することにより、このレーザビームの
照射時に透明電極にダメージを与えることがなくなり、
良好な出力特性を有する光起電力装置及びこのような光
起電力装置を歩留り良く製造できる光起電力装置の製造
方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and by partially overlapping a conductor on an insulator and irradiating the overlapping portion with a laser beam, damage to the transparent electrode can be avoided during irradiation with the laser beam. no longer gives
It is an object of the present invention to provide a photovoltaic device having good output characteristics and a method for manufacturing a photovoltaic device that can manufacture such a photovoltaic device with high yield.
本発明に係る光起電力装置は、透光性絶縁基板上に透明
電極、非晶質半導体層、裏面電極をこの順に積層形成し
た複数の光電変換素子を有し、隣合う光電変換素子間に
おいて一方の素子の透明電極と他方の素子の裏面電極と
を接続するための導電体、及び、該導電体と前記一方の
素子の非晶質半導体層、裏面電極とを絶縁状態に隔てる
ための絶縁体が、前記一方の素子の透明電極上に形成さ
れている光起電力装置において、前記導電体の−部は前
記絶縁体を覆っていることを特徴とする。The photovoltaic device according to the present invention has a plurality of photoelectric conversion elements in which a transparent electrode, an amorphous semiconductor layer, and a back electrode are laminated in this order on a light-transmitting insulating substrate. A conductor for connecting the transparent electrode of one element and the back electrode of the other element, and an insulator for separating the conductor from the amorphous semiconductor layer and the back electrode of the one element in an insulating state. In the photovoltaic device, the body is formed on the transparent electrode of one of the elements, characterized in that the negative part of the conductor covers the insulator.
本発明に係る光起電力装置の製造方法は、請求項１記載
の光起電力装置を製造する方法において、前記透光性箱
！！基板上に透明電極を形成してこれを各光電変換素子
毎に切断する工程と、各切断した透明電極上に、導電体
の一部を絶縁体上に重畳させた状態にて、導電体及び絶
縁体を形威する工程と、前記導電体、絶縁体及び各切断
した透明電極上にわたって前記非晶質半導体層２Ｍ面電
極をこの順に積層形成する工程と、前記導電体、絶縁体
上の前記非晶質半導体層、裏面電極を溶融切断して、隣
合う他方の光電変換素子の裏面電極と前記導電体とを接
続する工程どを有することを特徴とする。A method for manufacturing a photovoltaic device according to the present invention is a method for manufacturing a photovoltaic device according to claim 1, wherein the light-transmitting box! ! A step of forming a transparent electrode on a substrate and cutting it into each photoelectric conversion element, and forming a conductor and a conductor on each cut transparent electrode with a part of the conductor superimposed on the insulator a step of forming an insulator, a step of laminating the amorphous semiconductor layer 2M surface electrode over the conductor, the insulator and each cut transparent electrode in this order; It is characterized by including a step of melting and cutting the amorphous semiconductor layer and the back electrode to connect the back electrode of the other adjacent photoelectric conversion element and the conductor.
本発明の製造方法にあっては、透明電極のパタニングを
行った後に、導電体の一部が絶縁体上に重なるように導
電体、絶縁体を透明電極上に形成し、その重畳部分にレ
ーザビームを照ＵＪして、非晶質半導体層、裏面電極を
溶融切断する。そうすると、レーザビームの被照１Ｊ領
域である重畳部分の膜厚は厚いので、下方の透明電極へ
のレーザビームの影響はない。In the manufacturing method of the present invention, after patterning the transparent electrode, a conductor and an insulator are formed on the transparent electrode so that a part of the conductor overlaps the insulator, and a laser beam is applied to the overlapping portion. The beam is irradiated to melt and cut the amorphous semiconductor layer and the back electrode. In this case, since the film thickness of the overlapping portion, which is the 1J region to be irradiated with the laser beam, is thick, the laser beam does not affect the transparent electrode below.
以下、本発明をその実施例を示す図面に基づいて具体的
に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.
第１図は本発明に係る光起電力装置の第１の実施例の断
面構造図であり、図において１はガラス等からなる透光
性絶縁基板である。該透光性絶縁基板１１には複数の光
電変換素子Ａ、Ｂ、・・・が設けられており、これらの
光電変換素子は電気的に直列に接続されている。各光重
変換素子Ａ（Ｂ）は、５ｎＯｚまたはＩＴＯ／５ｎＯｚ
等を材料とする透明電極２ａ （２ｂ）、ｐ−１−ｎ接
合型またはｎ−１−ｐ接合型の非晶質半導体Ｂｔｊ３ａ
（３ｂ）、旧、 Ａ［ｊ等からなる裏面電極４ａ（４ｂ
）をこの順に積層した構成をなず。各光重変換素子Ｂ（
第１図では素子Ｂについてのみ図示）の透明電極２ｂ上
の一側縁近傍には、ガラスを主成分とする条状の絶縁体
６と、この絶縁体６にその一部が重畳されたＡｇからな
る導電体５とが形威されている。また隣合う光電変換素
子Ａ、Ｂにおいて、画素子の非晶質半導体層３ａ、 ３
ｂ及び裏面電極４ａ４ｂは分離溝７により分離されてい
る。素子Ａの裏面電極４ａは導電体５を介して素子Ｂの
透明電極２ｂに接続されており、このような接続により
、複数の光電変換素子Ａ、Ｂ、・・・が電気的に直列に
接続されている。また、各光電変換素子Ｂにおいて、透
明電極２ｂと裏面電極４ｂとの間には絶縁体６が介在し
てあり、両者は電気的に分離されている。FIG. 1 is a cross-sectional structural diagram of a first embodiment of a photovoltaic device according to the present invention, and in the figure, reference numeral 1 denotes a translucent insulating substrate made of glass or the like. A plurality of photoelectric conversion elements A, B, . . . are provided on the transparent insulating substrate 11, and these photoelectric conversion elements are electrically connected in series. Each light weight conversion element A (B) is 5nOz or ITO/5nOz
Transparent electrode 2a (2b) made of materials such as p-1-n junction type or n-1-p junction type amorphous semiconductor Btj3a
(3b), old, back electrode 4a (4b
) are stacked in this order. Each light weight conversion element B (
In the vicinity of one side edge of the transparent electrode 2b of the transparent electrode 2b (only element B is shown in FIG. A conductor 5 consisting of Furthermore, in the adjacent photoelectric conversion elements A and B, the amorphous semiconductor layers 3a and 3 of the pixel elements
b and the back electrode 4a4b are separated by a separation groove 7. The back electrode 4a of the element A is connected to the transparent electrode 2b of the element B via the conductor 5, and due to this connection, the plurality of photoelectric conversion elements A, B, . . . are electrically connected in series. has been done. Furthermore, in each photoelectric conversion element B, an insulator 6 is interposed between the transparent electrode 2b and the back electrode 4b, and the two are electrically isolated.
次にこのような構成を有する光起電力装置の製造手順に
ついて、その工程を模式的に示す第２図に基づき説明す
る。Next, the manufacturing procedure of a photovoltaic device having such a configuration will be explained based on FIG. 2, which schematically shows the process.
まず、透光性絶縁基板ｌの全面にわたって透明電極を形
成した後、レーザスクライブ法を用いてこの透明電極を
各光電変換素子毎に分割切断し、分割された各透明電極
２ｂ （第２図では透明電極２ｂにのみ図示）上にその
切断？＃８に沿わせて一側縁の全長にわたる様に絶縁体
６を形威し、次いで、切断溝８と絶縁体６との間の透明
電極２ｂ上に、その一部を絶縁体６に重畳させた態様に
て、導電体５を形成する（第２図（ａ））。ここで、ガ
ラスを主体とする絶縁性ペースト及びＡｇを主体とする
導電性ペーストを、スクリーン印刷等の手法にて塗布し
た後、これらを焼結して絶縁体６．導電体５を形成する
ことにする。First, a transparent electrode is formed over the entire surface of a translucent insulating substrate l, and then this transparent electrode is cut into parts for each photoelectric conversion element using a laser scribing method. Only the transparent electrode 2b (illustrated) is cut on top of the transparent electrode 2b? The insulator 6 is shaped so as to span the entire length of one side edge along #8, and then a part of it is overlapped with the insulator 6 on the transparent electrode 2b between the cutting groove 8 and the insulator 6. The conductor 5 is formed in this manner (FIG. 2(a)). Here, an insulating paste mainly composed of glass and a conductive paste mainly composed of Ag are applied by a method such as screen printing, and then sintered to form an insulator 6. A conductor 5 will be formed.
次いで、透明電極２ａ、 ２ｂ上１導電体５上、絶縁体
６上の全域にわたって、非晶質半導体層３．裏面電極４
をこの順に所要厚さにて積層形成した後、導電体５と絶
縁体６との重畳領域にレーザビートＬＢを照射する（第
２図（ｂ））。そうすると、非晶質半導体層３．裏面電
極４は各光電変換素子Ａ、 Ｂ毎に、非晶質半導体層
３ａ、 ３ｂ、裏面電極４ａ、 ４ｂに分離され、分離
された裏面電極４ａ、 ４ｈの分離溝７近傍の縁部は、
レーザビームＬ１１の熱により溶融されて垂れ下がり、
裏面電極４ａは導電体５上に、また裏面電極４ｂは絶縁
体６上に夫々接触状態にて固化され、第１図に示すよう
な光起電力装置が製造される。Next, an amorphous semiconductor layer 3. Back electrode 4
After laminating them in this order to a required thickness, the overlapping region of the conductor 5 and the insulator 6 is irradiated with a laser beat LB (FIG. 2(b)). Then, the amorphous semiconductor layer 3. The back electrode 4 is separated into amorphous semiconductor layers 3a, 3b and back electrodes 4a, 4b for each photoelectric conversion element A, B, and the edges of the separated back electrodes 4a, 4h near the separation groove 7 are as follows.
It is melted by the heat of the laser beam L11 and hangs down.
The back electrode 4a is solidified in contact with the conductor 5, and the back electrode 4b is solidified in contact with the insulator 6, thereby producing a photovoltaic device as shown in FIG.
第３図は本発明に係る光起電力装置の第２の実施例の断
面構造図であり、図中、第１図と同番号を付した部分は
同一または相当部分を示している。FIG. 3 is a cross-sectional structural diagram of a second embodiment of the photovoltaic device according to the present invention, and in the figure, parts given the same numbers as in FIG. 1 indicate the same or equivalent parts.
この第２の実施例にあっては、導電体５と絶縁体６との
重畳領域が、第１の実施例に比較して広くなっている。In this second embodiment, the overlapping area of the conductor 5 and the insulator 6 is wider than in the first embodiment.
そして、導電体５は分離溝７により導電体５ａ、 ５ｂ
に分離されており、光電変換素子１３の裏面電極４ｂと
絶縁体６とは、直接に接続されておらず、導電体５ｂを
介して接続されている。このように裏面電極４ｂと導電
体５ｂとは接触しζいるが、導電体５ｈと透明電極２ｂ
との間には絶縁体６が挟まれているので、第１の実施例
と同様に、透明電極２ｂ及び裏面電極４ｂは電気的に絶
縁されている。また、素子Ａの裏面電極４ａは導電体５
ａを介して素子Ｂの透明電極２ｂに接続されており、こ
のような接続により、複数の光電変換素子Ａ、Ｂ、・・
・が電気的に直列に接続されている。The conductor 5 is separated by the separation groove 7 into conductors 5a and 5b.
The back electrode 4b of the photoelectric conversion element 13 and the insulator 6 are not directly connected, but are connected via the conductor 5b. In this way, the back electrode 4b and the conductor 5b are in contact with each other, but the conductor 5h and the transparent electrode 2b are in contact with each other.
Since the insulator 6 is sandwiched between the transparent electrode 2b and the back electrode 4b, the transparent electrode 2b and the back electrode 4b are electrically insulated, as in the first embodiment. In addition, the back electrode 4a of element A is a conductor 5
It is connected to the transparent electrode 2b of element B through a, and this connection allows a plurality of photoelectric conversion elements A, B,...
・are electrically connected in series.
次にこの第２の実施例の製造手順について、その工程を
模式的に示す第４図に基づき説明する。Next, the manufacturing procedure of this second embodiment will be explained based on FIG. 4, which schematically shows the process.
まず、第１の実施例と同様に、透光性絶縁基板１」二に
透明電極２ａ、 ２ｂをパターン形成した後、第１の実
施例より重畳領域を広くして、透明電極２ｂ上に絶縁体
６．導電体５を形成する（第４図（ａｌ）。First, as in the first embodiment, after patterning transparent electrodes 2a and 2b on a transparent insulating substrate 1'', the overlapping area is made wider than in the first embodiment, and insulating electrodes are formed on the transparent electrode 2b. Body 6. A conductor 5 is formed (FIG. 4(al)).
次いで、全域にわたって、非晶質半導体層３．裏面電極
４をこの順に積層形成した後、導電体５と絶縁体６との
重畳領域であって導電体５の図中右側縁部よりも分割溝
８寄りの部分にレーザビーｌ、ＬＢを照射する（第４図
（ｂ））。そうすると、第１の実施例と同様に、非晶質
半導体層３．裏面電極４は各光電変換素子毎に、非晶質
半導体層３ａ、 ３ｈ、裏面電極４ａ、 ４ｂに分離さ
れると共に、導電体５も導電体５ａ、 ５ｂに分離され
る。透明電極２ｂ上に形成される導電体５．絶縁体６の
膜厚を１０〜３０．＋ｚｍとした場合、導電体５の形成
に印刷法を用いているので、絶縁体６上に重畳される部
分の導′１［体５の膜厚は１〜３μｍ程度である。槌っ
て、レーザビーム１、Ｂを照射した際に、絶縁体６］二
の部分の導電体５は容易に除去され、導電体５は導電体
５ａ＋ ５ｂに分離される。分離された裏面電極４ａ、
４ｂの分月１溝７近傍の縁部は、レーザビーｌ、１．Ｉ
Ｓの熱により溶融されて垂れ下がり、裏面電極４ａは導
電体５ａ上に、また裏面電極４ｂは絶縁体６上の導電体
５ｂ上に夫々接触状態にて固化され、第３図に示すよう
な光起電力装置が製造される。Next, the amorphous semiconductor layer 3. is formed over the entire area. After the back electrode 4 is laminated in this order, laser beams L and LB are irradiated to the overlapping region of the conductor 5 and insulator 6, which is closer to the dividing groove 8 than the right edge of the conductor 5 in the figure. (Figure 4(b)). Then, similarly to the first embodiment, the amorphous semiconductor layer 3. The back electrode 4 is separated into amorphous semiconductor layers 3a, 3h and back electrodes 4a, 4b for each photoelectric conversion element, and the conductor 5 is also separated into conductors 5a, 5b. A conductor 5 formed on the transparent electrode 2b. The film thickness of the insulator 6 is 10 to 30. In the case of +zm, since the printing method is used to form the conductor 5, the film thickness of the conductor'1 [body 5] in the portion superimposed on the insulator 6 is about 1 to 3 μm. When the conductor 5 is hammered and irradiated with the laser beams 1 and B, the conductor 5 in the insulator 6]2 portion is easily removed, and the conductor 5 is separated into conductors 5a+5b. Separated back electrode 4a,
The edge near the minute 1 groove 7 of 4b is the laser bee l, 1. I
The back electrode 4a is melted by the heat of S and hangs down, and the back electrode 4a is solidified in contact with the conductor 5a and the back electrode 4b is in contact with the conductor 5b on the insulator 6, and the light emitted as shown in FIG. An electromotive force device is manufactured.
本発明では、何れの実施例においても、導電体５及び絶
縁体６の重畳領域にレーザビームを照射する。この際、
被照射領域のこれらの膜厚は厚いので、その下方の透明
電極２ｂがレーザビームにてダメージを受けることはな
く、従来例のような透明電極の除去または分断の虞はな
く、出力特性の低下は見られない。In any embodiment of the present invention, the overlapping region of the conductor 5 and the insulator 6 is irradiated with a laser beam. On this occasion,
Since these films in the irradiated area are thick, the transparent electrode 2b below is not damaged by the laser beam, and there is no risk of removal or separation of the transparent electrode as in the conventional example, resulting in a decrease in output characteristics. cannot be seen.
なお、本実施例では、分離溝７を形成して各素子毎に非
晶質半導体層３．裏面電極４を分離する際にレーザビー
ムを照射することにしたが、レーザビームに限らず電子
ビーム等の他のエネルギビームを用いてもよく、また化
学上・ノチングを用いることとしてもよい。Note that in this embodiment, separation trenches 7 are formed to separate the amorphous semiconductor layers 3 and 3 for each element. Although a laser beam is used to separate the back electrode 4, other energy beams such as an electron beam may be used instead of a laser beam, or chemical notching may be used.
上述した如く本発明では、絶縁体に導電体の一部を重畳
させた構成とし、膜厚が厚いこの重畳領域にレーザビー
ムを照射するので、これらを貫通してレーザビームが透
明電極にダメージを与えることはなく、良好な出力特性
を有する光起電力装置を歩留り良く製造することができ
る。As described above, in the present invention, a part of the conductor is superimposed on the insulator, and the laser beam is irradiated to this thick overlapped region, so that the laser beam penetrates through them and does not damage the transparent electrode. Therefore, a photovoltaic device having good output characteristics can be manufactured with high yield.
第１図は本発明の光起電力装置の第１の実施例の断面構
造図、第２図はこの第１の実施例の製造工程を示す断面
図、第３図は本発明の光起電力装置の第２の実施例の断
面構造図、第４図はこの第２の実施例の製造工程を示す
断面図、第５図は従来の光起電力装置の断面構造図、第
６図は従来の光起電力装置の製造工程を示す断面図であ
る。
■・・・透光性絶縁基板 ２ａ、 ２ｂ・・・透明電極
３３ａ、 ３ｂ・・・非晶質半導体層 ４．４ａ、
４ｂ・・・裏面電極５、５ａ、 ５ｂ・・・導電体 ６
・・・絶縁体 ７・・・分離溝Ａ、Ｂ・・・光電変換素
子
特 許 出願人 三洋電機株式会社Fig. 1 is a cross-sectional structural diagram of a first embodiment of the photovoltaic device of the present invention, Fig. 2 is a cross-sectional view showing the manufacturing process of this first embodiment, and Fig. 3 is a photovoltaic device of the present invention. 4 is a sectional view showing the manufacturing process of this second embodiment, FIG. 5 is a sectional view of a conventional photovoltaic device, and FIG. 6 is a sectional view of a conventional photovoltaic device. FIG. 3 is a cross-sectional view showing the manufacturing process of the photovoltaic device. ■...Transparent insulating substrate 2a, 2b...Transparent electrode 33a, 3b...Amorphous semiconductor layer 4.4a,
4b... Back electrode 5, 5a, 5b... Conductor 6
... Insulator 7 ... Separation grooves A, B ... Photoelectric conversion element patent Applicant Sanyo Electric Co., Ltd.
Claims (1)
面電極をこの順に積層形成した複数の光電変換素子を有
し、隣合う光電変換素子間において一方の素子の透明電
極ど他方の素子の裏面電極とを接続するための導電体、
及び、該導電体と前記一方の素子の非晶質半導体層、裏
面電極とを絶縁状態に隔てるための絶縁体が、前記一方
の素子の透明電極上に形成されている光起電力装置にお
いて、 前記導電体の一部は前記絶縁体を覆ってい ることを特徴とする光起電力装置。 ２、請求項１記載の光起電力装置を製造する方法におい
て、 前記透光性絶縁基板上に透明電極を形成し てこれを各光電変換素子毎に切断する工程と、各切断し
た透明電極上に、導電体の一部を 絶縁体上に重畳させた状態にて、導電体及び絶縁体を形
成する工程と、 前記導電体、絶縁体及び各切断した透明電 極上にわたって前記非晶質半導体層、裏面電極をこの順
に積層形成する工程と、 前記導電体、絶縁体上の前記非晶質半導体 層、裏面電極を溶融切断して、隣合う他方の光電変換素
子の裏面電極と前記導電体とを接続する工程と を有することを特徴とする光起電力装置の 製造方法。[Claims] 1. It has a plurality of photoelectric conversion elements in which a transparent electrode, an amorphous semiconductor layer, and a back electrode are laminated in this order on a transparent insulating substrate, and between adjacent photoelectric conversion elements, one A conductor for connecting the transparent electrode of one element to the back electrode of the other element,
and a photovoltaic device, wherein an insulator for insulatingly separating the conductor from the amorphous semiconductor layer and the back electrode of the one element is formed on the transparent electrode of the one element, A photovoltaic device, wherein a portion of the conductor covers the insulator. 2. The method for manufacturing a photovoltaic device according to claim 1, including the steps of forming a transparent electrode on the transparent insulating substrate and cutting the transparent electrode into each photoelectric conversion element; a step of forming a conductor and an insulator with a part of the conductor superimposed on the insulator; and a step of forming the amorphous semiconductor layer over the conductor, the insulator, and each cut transparent electrode. , a step of laminating a back electrode in this order, and melting and cutting the amorphous semiconductor layer and back electrode on the conductor and insulator to separate the back electrode of the other adjacent photoelectric conversion element and the conductor. A method for manufacturing a photovoltaic device, comprising the step of connecting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1266967A JP2883371B2 (en) | 1989-10-13 | 1989-10-13 | Photovoltaic device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1266967A JP2883371B2 (en) | 1989-10-13 | 1989-10-13 | Photovoltaic device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03127867A true JPH03127867A (en) | 1991-05-30 |
| JP2883371B2 JP2883371B2 (en) | 1999-04-19 |
Family
ID=17438198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1266967A Expired - Fee Related JP2883371B2 (en) | 1989-10-13 | 1989-10-13 | Photovoltaic device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2883371B2 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4243432A (en) * | 1978-09-25 | 1981-01-06 | Photon Power, Inc. | Solar cell array |
| JPS5818971A (en) * | 1981-07-28 | 1983-02-03 | Agency Of Ind Science & Technol | photovoltaic device |
| JPS6114769A (en) * | 1984-06-29 | 1986-01-22 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS63102278A (en) * | 1986-10-17 | 1988-05-07 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS63261762A (en) * | 1987-04-17 | 1988-10-28 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
-
1989
- 1989-10-13 JP JP1266967A patent/JP2883371B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4243432A (en) * | 1978-09-25 | 1981-01-06 | Photon Power, Inc. | Solar cell array |
| JPS5818971A (en) * | 1981-07-28 | 1983-02-03 | Agency Of Ind Science & Technol | photovoltaic device |
| JPS6114769A (en) * | 1984-06-29 | 1986-01-22 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS63102278A (en) * | 1986-10-17 | 1988-05-07 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS63261762A (en) * | 1987-04-17 | 1988-10-28 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2883371B2 (en) | 1999-04-19 |
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