JPS63261762A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS63261762A JPS63261762A JP62095683A JP9568387A JPS63261762A JP S63261762 A JPS63261762 A JP S63261762A JP 62095683 A JP62095683 A JP 62095683A JP 9568387 A JP9568387 A JP 9568387A JP S63261762 A JPS63261762 A JP S63261762A
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- insulating heat
- resistant layer
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229920005575 poly(amic acid) Polymers 0.000 claims description 3
- 230000003685 thermal hair damage Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光照射により電力を発生する光起電力装置の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a photovoltaic device that generates electric power by irradiation with light.
第１３図は、米国特許第４，２８１．２０８号に開示さ
れ、既に実用化されている光起電力装置の基本構造を示
す模式図である。ガラス、耐熱プラスチック等のように
絶縁性及び透光性を有する基Ｆｉｌ上に、５ｎ０２ 、
ＩＴＯ等の透光性酸化物導電体からなり、透光性を有
する第１電極膜２ａ、２ｂ、２ｃ・・・が一定間隔にて
被着されている。また、各第１電極膜２ａ、２ｂ。FIG. 13 is a schematic diagram showing the basic structure of a photovoltaic device that is disclosed in US Pat. No. 4,281.208 and has already been put into practical use. 5n02,
First electrode films 2a, 2b, 2c, . . . made of a transparent oxide conductor such as ITO and having a transparent property are deposited at regular intervals. Moreover, each first electrode film 2a, 2b.
２ｃ・・・上には非晶質シリコン等の膜状非晶質半導体
からなる光活性層３ａ、３ｂ、３ｃ・・・が重畳被着さ
れている。更に、各光活性層３ａ、３ｂ、３ｃ・・・上
には、ＡＩ等のオーミック金属からなる裏面側の第２電
極膜４ａ。Photoactive layers 3a, 3b, 3c, . . . made of a film-like amorphous semiconductor such as amorphous silicon are superimposed and deposited on 2c. Further, on each of the photoactive layers 3a, 3b, 3c..., there is a second electrode film 4a on the back side made of an ohmic metal such as AI.
４１）＋ ４ｃ・・・が、各右隣の第１電極膜２ａ、２
ｂ、２ｃ・・・に部分的に接続して、重畳被着されてい
る。そして、このような第１電極Ｐｊ！２ａ、２ｂ、２
ｃｍ、光活性層３ａ、３ｂ。41) + 4c... is the first electrode film 2a, 2 on the right side of each
b, 2c, . . . are partially connected and superimposed. Then, such a first electrode Pj! 2a, 2b, 2
cm, photoactive layers 3a, 3b.
３ｃ・・・及び第２電極膜４ａ、４ｂ、４ｃ・・・の各
積層体により、光電変換素子５ａ、５ｂ、５ｃ・・・が
構成されており、各光電変換素子５ａ、５ｂ、５ｃ・・
・は電気的に直列接続されている。3c... and the second electrode films 4a, 4b, 4c... constitute photoelectric conversion elements 5a, 5b, 5c..., and each photoelectric conversion element 5a, 5b, 5c...・
・are electrically connected in series.
各光活性層３ａ、３ｂ、３ｃ・・・は、その内部に例え
ば層面に平行なＰＩＮ接合を含み、従って基板１から第
１電極膜２ａ、２ｂ、２ｃ・・・を通って光が入射され
ると、光起電力を発生する。各光活性層３ａ、３ｂ、３
ｃ・・・内において発生した光起電力は、第２電極膜４
ａ、 ４ｂ、 ４ｃ・・・と右隣の第１電極膜２ａ、２
ｂ、２ｃ・・・との接続により、直列的に加算されて外
部に取出される。Each of the photoactive layers 3a, 3b, 3c... includes therein, for example, a PIN junction parallel to the layer surface, so that light is incident from the substrate 1 through the first electrode films 2a, 2b, 2c... Then, a photovoltaic force is generated. Each photoactive layer 3a, 3b, 3
The photovoltaic force generated in the second electrode film 4
a, 4b, 4c... and the first electrode films 2a, 2 on the right
By connecting with b, 2c, . . . , they are added in series and taken out to the outside.
そして、かかる構成の光起電力装置を製造する場合にお
ける各膜の分離形成には、細密加工性に優れている写真
蝕刻技術が用いられている。この技術による場合、基板
１上全面への第１電極膜の被着工程と、フォトレジスト
及びエツチングによる各個別の第１電極膜２ａ、２ｂ、
２ｃ・・・の分離、即ち、各第１Ｎ極Ｗ！２ａ、 ２ｂ
、 ２ｃ・・・の隣接間隔部の除去工程と、これら各第
１電極膜上を含む基板ｌ上全面への光活性層の被着工程
と、フォトレジスト及びエツチングによる各個別の光活
性ｆｆ１３ａ、３ｂ、３ｃ・・・の分離、即ち、各光活
性層３ａ、 ３ｂ、 ３ｃ・・・の隣接間隔部の除去工
程と、これら各第１電極膜上及び各光活性層上を含む基
板１上全面への第２電極膜の被着工程と、フォトレジス
ト及びエツチングによる第２電極膜４ａ、４ｂ、４ｃ・
・・の分離工程とを順次経ることになる。When manufacturing a photovoltaic device having such a configuration, photolithography, which is excellent in precision processing, is used to separate and form each film. In the case of this technique, the first electrode film is deposited on the entire surface of the substrate 1, and each individual first electrode film 2a, 2b is formed by photoresist and etching.
2c..., i.e., each first N pole W! 2a, 2b
, 2c, . 3b, 3c, . The process of depositing the second electrode film on the entire surface, and the second electrode films 4a, 4b, 4c and 4c by photoresist and etching.
...separation steps are sequentially performed.
しかしながら、写真蝕刻技術は細密加工の点では優れて
いるが、蝕刻パターンを規定するフォトレジストのピン
ホールまたは周縁における剥離に伴う欠陥が光活性層に
生じやすいという問題点がある。However, although the photo-etching technique is superior in terms of fine processing, it has the problem that defects are likely to occur in the photoactive layer due to pinholes or peeling at the periphery of the photoresist that defines the etching pattern.
また、特開昭５７−１２５６８号公報に開示された先行
技術は、レーザビームの照射による膜の焼き切りにて前
記隣接間隔部を除去するものであり、写真蝕刻技術では
必要なフォトレジスト、即ちウェットプロセスを一切使
わず細密加工性に優れたその技法は前述の問題点を解決
するために極めて有効である。Furthermore, in the prior art disclosed in Japanese Patent Application Laid-Open No. 57-12568, the adjacent spaced portions are removed by burning off the film by laser beam irradiation. This technique, which does not require any process and has excellent precision machinability, is extremely effective in solving the above-mentioned problems.
レーザ使用の際に留意すべきことは、かかるレーザ加工
は本質的に熱加工であり、加工しようとする膜部分の下
の膜に熱的損傷を与えないことである。特開昭５７−１
２５６８号公報にに開示された先行技術は、この要求を
満たすために、使用するレーザの出力、またはパルスレ
ーザを使用する場合にはその周波数を各膜の膜質または
膜厚に対して設定することを提案している。What should be kept in mind when using a laser is that such laser processing is essentially a thermal processing and should not cause thermal damage to the film below the part of the film to be processed. JP-A-57-1
In order to meet this requirement, the prior art disclosed in Japanese Patent No. 2568 sets the output of the laser to be used, or the frequency when using a pulsed laser, to the film quality or film thickness of each film. is proposed.
しかしながら、光活性層３ａ、３ｂ、３ｃ・・・のＮ型
層上に形成される築２電極膜４ａ、４ｂ、４ｃ・・・は
前記Ｎ型層とオーミック接触すべくＡＩ＋ Ｔｔ＋ Ａ
ｕ、 Ａｇ等の周知のオーミック合圧かう選択されるが
、その内特に八１は、前記Ｎ型層を透過しようとする光
を再び光電変換に寄与する■型（ノンドープ）層に反射
せしめることができる点及びコスト的に安価である点等
から有利な材料であるが、上述の如くレーザビームの照
射によるバターニング加工においては、使用するレーザ
の種類にも左右されるが一般的なレーザビームに対する
反射率は高く、例えば波長１．０６μｍのＹＡＧレーザ
においては約９０９４ｒ以上であり、熱伝導性が良いた
めに極めて加工条件が厳しく下記の欠点を有する。However, the double electrode films 4a, 4b, 4c... formed on the N-type layers of the photoactive layers 3a, 3b, 3c...
Well-known ohmic combination pressures such as U, Ag, etc. are selected, but 81 in particular reflects the light that is about to pass through the N-type layer to the ■-type (non-doped) layer that contributes to photoelectric conversion again. Although it is an advantageous material because it can be used for laser beam irradiation and is inexpensive, as mentioned above, in patterning processing by laser beam irradiation, it depends on the type of laser used, but the general laser beam For example, YAG laser with a wavelength of 1.06 μm has a high reflectance of about 9094 r or more, and because of its good thermal conductivity, processing conditions are extremely strict and have the following drawbacks.
即ち、レーザ出力が弱いと第２電極膜４を完全に分離す
ることができず、逆に強過ぎると、第１４図の如く第２
電極膜４の分離が光活性層３ａ、 ３ｂ・・・の端面と
第１電極膜２ａ、 ２ｂ・・・の露出界面との間におい
て行われている場合、光活性層３ａ、 ３ｂ・・・上の
第２電極膜４ａ、 ４ｂ・・−の端面がそれらの熔融に
より対応する光電変換素子５ａ、 ５ｂ・・・の第１電
極膜２ａ。That is, if the laser output is weak, it will not be possible to completely separate the second electrode film 4, and if the laser output is too strong, the second electrode film 4 will be separated as shown in FIG.
When the electrode film 4 is separated between the end face of the photoactive layer 3a, 3b... and the exposed interface of the first electrode film 2a, 2b..., the photoactive layer 3a, 3b... The end surfaces of the upper second electrode films 4a, 4b, . . . correspond to the first electrode films 2a of the photoelectric conversion elements 5a, 5b, .
２ｂ・・・上に流れ出してこの光電変換素子５ａ、 ５
ｂ・・・を短絡させたり、また第１５図の如く光活性層
３ａ、 ３ｂ・・・上において第２電極膜４ａ、 ４ｂ
・・・を分離する構造にあっては、高出力のレーザビー
ムの直撃を受けた光活性層部分工３がアニーリングされ
低抵抗化される結果、この低抵抗の光活性層部分１３を
介して物理的に分離された筈の第２電極膜４ａ＋ ４ｂ
・・・を電気的に分離することができない事故が発生す
る。2b...flows upward and these photoelectric conversion elements 5a, 5
b... or the second electrode films 4a, 4b on the photoactive layers 3a, 3b... as shown in FIG.
In the structure that separates ..., the photoactive layer part 3 that has been directly hit by the high-power laser beam is annealed and has a low resistance, and as a result, the photoactive layer part 13 with low resistance is Second electrode films 4a+ 4b that should be physically separated
Accidents occur where it is not possible to electrically isolate ....
また、低出力のレーザビームを照射した場合には、光活
性層上に第２電極１１４ａ、 ４ｂの熔融残留物が除去
されずに残存し、第２電極膜４ａ、 ４ｂを電気的に分
離することができない事故が発生する。Furthermore, when a low-power laser beam is irradiated, the melted residue of the second electrodes 114a, 4b remains on the photoactive layer without being removed, electrically separating the second electrode films 4a, 4b. Accidents that cannot be done occur.
本発明はかかる事情に鑑みてなされたものであり、第２
＠極膜を素子毎に分離させる領域の第１電極膜上または
光活性層上に絶縁耐熱層を形成し、次いで絶縁耐熱層が
形成された領域にエネルギビームを照射して第２電極膜
を分離することにより、絶縁耐熱層の下層の膜に熱的損
傷が与えられることなく、しかも隣合う光電変換素子同
士の短絡を防止することができる光起電力装置の製造方
法を提供することを目的とする。The present invention has been made in view of such circumstances, and is a second invention.
@An insulating heat-resistant layer is formed on the first electrode film or on the photoactive layer in the region where the electrode film is separated for each element, and then an energy beam is irradiated to the region where the insulating heat-resistant layer is formed to form a second electrode film. An object of the present invention is to provide a method for manufacturing a photovoltaic device that can prevent short circuits between adjacent photoelectric conversion elements without causing thermal damage to the underlying film of an insulating heat-resistant layer by separating them. shall be.
〔問題点を解決するための手段〕
本発明に係る光起電力装置の製造方法は、第１電極膜、
光活性層及び第２電極膜を基板上にこの順に積層して構
成される複数の光電変換素子を有し、各光電変換素子を
電気的に直列接続せしめた光起電力装置を製造する方法
において、基板上に複数の第１電極膜を分離形成する一
方、各第１電極膜上の所定位置に第１電極膜より狭幅の
絶縁耐熱層を形成し、第１電極膜及び絶縁耐熱層の各露
出部分を含んで基板上に光活性層及び第２電極膜をこの
順に積層形成し、次いで第２電極膜の絶縁耐熱層上の部
分にエネルギビームを照射して少なくとも第２電極膜を
除去して、第２電極膜を各光電変換素子毎に分離するこ
とを特徴とし、また、第１電極膜、光活性層及び第２電
極膜を基板上にこの順に積層して構成される複数の光電
変換素子を有し、各光電変換素子を電気的に直列接続せ
しめた光起電力装置を製造する方法において、基板上に
第１電極膜を分離形成し、第１電極膜の露出部分を含ん
で基板上に光活性層を分離形成し、次に各光活性層上に
該光活性層より狭幅の絶縁耐熱層を形成し、第１電極膜
、光活性層及び絶縁耐熱層の各露出部分を含んで基板上
に第２電極膜を形成し、次いで前記絶縁耐熱層上の部分
の第２電極膜にエネルギビームを照射して第２電極膜を
除去して、第２電極膜を各光電変換素子毎に分離するこ
とを特徴とする。[Means for solving the problem] The method for manufacturing a photovoltaic device according to the present invention includes a first electrode film,
In a method for manufacturing a photovoltaic device having a plurality of photoelectric conversion elements configured by laminating a photoactive layer and a second electrode film in this order on a substrate, each photoelectric conversion element being electrically connected in series. , a plurality of first electrode films are separately formed on a substrate, and an insulating heat-resistant layer having a width narrower than that of the first electrode film is formed at a predetermined position on each first electrode film, and the first electrode film and the insulating heat-resistant layer are A photoactive layer and a second electrode film are laminated in this order on the substrate including each exposed portion, and then an energy beam is irradiated to the portion of the second electrode film on the insulating heat-resistant layer to remove at least the second electrode film. The second electrode film is separated for each photoelectric conversion element, and the first electrode film, the photoactive layer, and the second electrode film are laminated in this order on the substrate. In a method for manufacturing a photovoltaic device having a photoelectric conversion element and each photoelectric conversion element being electrically connected in series, a first electrode film is separately formed on a substrate, and an exposed portion of the first electrode film is not included. A photoactive layer is separately formed on the substrate, and then an insulating heat-resistant layer having a narrower width than the photoactive layer is formed on each photoactive layer, and each of the first electrode film, the photoactive layer, and the insulating heat-resistant layer is exposed. A second electrode film is formed on the substrate including the portion on the insulating heat-resistant layer, and then the second electrode film is removed by irradiating the second electrode film on the portion on the insulating heat-resistant layer, and the second electrode film is removed from each other. The feature is that each photoelectric conversion element is separated.
本発明方法では、まず基板上に第１電橿膜及び絶縁耐熱
層（第１電極膜、光活性層及び絶！！＠熱りを素子毎に
分離して形成する。次に、第１電極膜及び絶縁耐熱層（
第１電極膜、光活性層及び絶縁耐熱層）の各露出部分を
含んで基板上に光活性層及び第２電極膜（第２電極膜）
を積層形成する。次いで絶縁耐熱層上にエネルギビーム
を照射して照射領域の光活性層及び第２電極膜（第２電
極膜）を除去して第２電極膜を各光電変換素子毎に分離
する。そうすると絶縁耐熱層はこの層より下層の膜への
熱伝導を遮断し、第２電極膜または光活性層の熔融に伴
う電気的な短絡事故を防止する。In the method of the present invention, first, a first electrode film and an insulating heat-resistant layer (a first electrode film, a photoactive layer, and an insulating heat-resistant layer are formed separately for each element on a substrate. Membranes and insulating heat-resistant layers (
The photoactive layer and the second electrode film (second electrode film) are coated on the substrate, including the exposed parts of the first electrode film, the photoactive layer, and the insulating heat-resistant layer.
Laminated and formed. Next, the insulating heat-resistant layer is irradiated with an energy beam to remove the photoactive layer and the second electrode film (second electrode film) in the irradiated area, and the second electrode film is separated into each photoelectric conversion element. Then, the insulating heat-resistant layer blocks heat conduction to the film below this layer and prevents an electrical short circuit caused by melting of the second electrode film or the photoactive layer.
以下、本発明をその実施例を示す図面に基づいて説明す
る。Hereinafter, the present invention will be explained based on drawings showing embodiments thereof.
第１図は本発明の製造方法により製造された光起電力装
置の実施例を示す断面図であり、第１３図の従来装置と
同じ部分については同一番号が付しである。本発明の製
造方法により製造された光起電力装置の構造的特徴点は
、複数の光電変換素子５ａ、５ｂ、５ｃ・・・を電気的
に直列接続すべくそれらの隣接間隔部ａｂ、 ｂｃ・・
・において光活性層３ａ、３ｂ、３ｃ・・・から露出し
た第１電極膜の露出部分１２ｂ、 １２ｃ・・・の近傍
に光活性層３ａ、３ｂ、３ｃ・・・の形成に先立って、
光活性層３ａ、３ｂ、３ｃ・・・より膜厚が十分に厚い
絶縁耐熱層６ｂ、 ６ｃ・・・が設けられ、この絶縁耐
熱層６ｂ＋ ６ｃ・・・上において第２電極膜４ａ、
４ｂ・・・の電気的延長部分１４ａ。FIG. 1 is a sectional view showing an embodiment of a photovoltaic device manufactured by the manufacturing method of the present invention, and the same parts as in the conventional device shown in FIG. 13 are given the same numbers. The structural feature of the photovoltaic device manufactured by the manufacturing method of the present invention is that a plurality of photoelectric conversion elements 5a, 5b, 5c, .・
Prior to forming the photoactive layers 3a, 3b, 3c... in the vicinity of the exposed portions 12b, 12c... of the first electrode film exposed from the photoactive layers 3a, 3b, 3c...
Insulating heat-resistant layers 6b, 6c, etc., which are sufficiently thicker than the photoactive layers 3a, 3b, 3c,... are provided, and on the insulating heat-resistant layers 6b+6c..., the second electrode film 4a,
4b... electrical extension portion 14a.
１４ｂ・・・がレーザビームの照射により分離されてい
る点である。従って、隣接間隔部ａｂ、 ｂｃ・・・に
おいて右側の光電変換素子５ａ、５ｂ、５ｃ・・・の第
１電極膜の露出部分１２ｂ、 １２ｃ・・・と、左側の
第２電極膜４ａ、 ４ｂ・・・の延長部分１４ａ、 １
４ｂ・・・とは夫々電気的に連なることとなり直列接続
型の光起電力装置を構成する。Points 14b... are separated by laser beam irradiation. Therefore, in the adjacent spacing parts ab, bc..., the exposed portions 12b, 12c... of the first electrode films of the photoelectric conversion elements 5a, 5b, 5c... on the right side and the second electrode films 4a, 4b on the left side. ... extension portion 14a, 1
4b... are electrically connected to each other and form a series-connected photovoltaic device.
ここで絶縁耐熱層６ｂ、 ６ｃ・・・は、後工程にて形
成される光活性層３ａ、３ｂ、３ｃ・・・に拡散したり
することのない材料、例えば熱硬化性のポリイミド系耐
熱樹脂が選択され、その電気的特性は、体積抵抗率２ｘ
ｉ ｏ ｌｈΩロ１表面抵抗率１０′６Ω以上、絶縁
破壊電圧２５０ ＫＶ／寵以上である。Here, the insulating heat-resistant layers 6b, 6c... are made of a material that does not diffuse into the photoactive layers 3a, 3b, 3c... formed in a subsequent process, such as thermosetting polyimide heat-resistant resin. is selected, and its electrical properties are volume resistivity 2x
The surface resistivity is 10'6 Ω or more, and the dielectric breakdown voltage is 250 KV/cm or more.
次にこのような構成の光起電力装置の具体的製造方法に
ついて説明する。まず絶縁耐熱層の形成方法について説
明する。第２図〜第４図は絶縁耐熱層の形成方法の一例
を工程順に示した模式図、第５図はその工程のフローチ
ャートである。Next, a specific method for manufacturing a photovoltaic device having such a configuration will be described. First, a method for forming the insulating heat-resistant layer will be explained. 2 to 4 are schematic diagrams showing an example of a method for forming an insulating heat-resistant layer in the order of steps, and FIG. 5 is a flowchart of the steps.
第２図の工程では、まず基板１上に第１電極膜２を被着
し、次に第１電極膜２上全面にスピナ。In the process shown in FIG. 2, the first electrode film 2 is first deposited on the substrate 1, and then the entire surface of the first electrode film 2 is covered with a spinner.
スプレまたはハケを用いて先負縁性樹脂溶液、例えば全
芳香族ポリアミド酸溶液を厚さ１μｍ〜数十μｍの一定
膜厚にて塗付したく第５図■）後、プリキュアとして８
０〜ｂ
（第５図■）。Using a spray or brush, apply a negative-edge resin solution, such as a fully aromatic polyamic acid solution, to a constant film thickness of 1 μm to several tens of μm (Fig.
0-b (Fig. 5 ■).
第３図の工程では、２本のレーザビームＬ１゜Ｌ２を照
射し、レーザビームし１の照射にて照射領域の絶縁耐熱
層６及び第１電極膜を同時に除去し、レーザビームＬ１
より低出力であるレーザビームＬ２の照射にて照射領域
の絶縁耐熱層６ｂを熱硬化する（第５図■）。このとき
レーザビームし。In the process shown in FIG. 3, two laser beams L1 and L2 are irradiated.
The insulating heat-resistant layer 6b in the irradiated area is thermally hardened by irradiation with the laser beam L2, which has a lower output (FIG. 5). At this time, the laser beam is emitted.
はパルス型ビームであり、レーザビームＬ２はパルス型
または開型ビームである。is a pulsed beam, and the laser beam L2 is a pulsed or open beam.
第４図の工程では、このように構成されたものをＮａＯ
Ｈ，ＫＯＨ等からなるアルカリ溶液に室温にて浸し、レ
ーザビームが照射されていない部分の絶縁耐熱層を除去
して（第５図■）、絶縁耐熱層６ｂをパターン形成し、
次にアフタキュアとして２００〜ｂ
第６図は絶縁耐熱層６ｂを形成する方法の他の実施例の
工程を示す模式図、第７図はその工程のフローチャート
である。基板１上に第１電極膜２を被着した後、第１電
極膜２をレーザビームＬＢの照射により部分的に除去す
ると共に第１電極膜２上の所定位置にディスペンサ２０
により絶縁耐熱層６を塗付し、パターン化する（第７図
■）。パターン形成した後、プリキュアとして８０〜ｂ
分程度乾燥させ（第７図■）、アフタキュアとして２０
０〜ｂ
絶縁耐熱層６ｂを硬化させる。In the process shown in Fig. 4, the structure constructed in this way is
The insulating heat-resistant layer 6b is patterned by immersing it in an alkaline solution of H, KOH, etc. at room temperature and removing the portions of the insulating heat-resistant layer that are not irradiated with the laser beam (Fig. 5 ■).
Next, as an after cure, 200-b is applied. FIG. 6 is a schematic diagram showing the process of another embodiment of the method for forming the insulating heat-resistant layer 6b, and FIG. 7 is a flowchart of the process. After the first electrode film 2 is deposited on the substrate 1, the first electrode film 2 is partially removed by irradiation with the laser beam LB, and a dispenser 20 is placed at a predetermined position on the first electrode film 2.
The insulating heat-resistant layer 6 is applied and patterned (Fig. 7 (■)). After pattern formation, 80~b as precure
Leave to dry for about 20 minutes (Fig. 7 ■) and use as an after cure.
0 to b The insulating heat-resistant layer 6b is cured.
上述した如く絶縁耐熱層６ｂ、 ６ｃ・・・が形成され
た後、第１電極膜２ａ、２ｂ、２ｃ・・・及び該絶縁断
熱層６ｂ。After the insulating heat-resistant layers 6b, 6c... are formed as described above, the first electrode films 2a, 2b, 2c... and the insulating heat-insulating layer 6b are formed.
６ｃ・・・を覆う如くそれらの全面に、少なくとも一つ
の半導体接合を備えた光活性層が形成され、かかる光活
性層は従来の技術において述べた特開昭５７−１２５６
８号公報の如くレーザビームの照射により照射部分を除
去して第１電極膜２ａ、 ２ｂ、 ２ｃ・・・の露出部
分１２ｂ、 １２ｃ・・・を露出せしめた状態で各光電
変換素子５ａ、５ｂ、５ｃ・・・毎に個別に分割される
。そして、これら光活性層３ａ、３ｂ、３ｃ・・・及び
第１電極膜２ａ、２ｂ。A photoactive layer having at least one semiconductor junction is formed on the entire surface thereof so as to cover the 6c...
As in Publication No. 8, each photoelectric conversion element 5a, 5b is exposed with the irradiated portion removed by laser beam irradiation to expose the exposed portions 12b, 12c... of the first electrode films 2a, 2b, 2c... , 5c, . . . And these photoactive layers 3a, 3b, 3c... and the first electrode films 2a, 2b.
２ｃ・・・の露出部分１２ｂ、 １２ｃ・・・上全面に
第２電極膜４が蒸着される。The second electrode film 4 is deposited on the entire upper surface of the exposed portions 12b, 12c, 2c, .
第８図は蒸着された第２電極膜４が個別に分割される工
程を示す模式図である。レーザビームＬＢＯ光路領域に
はレーザビームＬＢのビーム径を調整する対物レンズ２
１が設けられており、ビーム径を調整することによりレ
ーザ出力が決定され、前記対物レンズ２工により集光さ
れ出力が決定されたレーザビームＬＢは一点鎖線で規定
された照射領域Ａを照射すべく走査される。前述した如
く照射領域Ａにおける透明電極膜上には他の構成膜より
も十分に肉厚の絶縁耐熱層６ｂ・・・が設けられている
ので、レーザビームしＢの出力が多少大きくても肉厚十
分な絶縁耐熱ｊＥｉ６ｂ・・・は焼き切られることはな
くレーザビームＬＢの照射に対して断熱体として作用す
る。FIG. 8 is a schematic diagram showing a process in which the deposited second electrode film 4 is individually divided. In the laser beam LBO optical path area, there is an objective lens 2 for adjusting the beam diameter of the laser beam LB.
1 is provided, the laser output is determined by adjusting the beam diameter, and the laser beam LB, which is focused by the objective lens 2 and whose output is determined, irradiates the irradiation area A defined by the dashed line. scanned as much as possible. As mentioned above, the insulating heat-resistant layer 6b is provided on the transparent electrode film in the irradiation area A, which is sufficiently thicker than the other constituent films, so even if the output of the laser beam B is somewhat large, The sufficiently thick and heat-resistant insulation jEi6b... is not burned out and acts as a heat insulator against irradiation with the laser beam LB.
従って、第２電極膜４としてレーザビームＬＢによる選
択加工性が悪かったＡ１またはＡ１合金を用いたとして
も、絶縁耐熱層６ｂ・・・により被覆された第１電極膜
２ｂ・・・は熱的損傷を受けることなくパターニング加
工が施される。また、他のオーミック全尿であってもレ
ーザ出力条件がかなり大きいものでも許容される結果、
加工条件が大幅に緩和されレーザ照射によるパターニン
グ加工が容易となる。Therefore, even if A1 or A1 alloy, which has poor selective processability with the laser beam LB, is used as the second electrode film 4, the first electrode film 2b... covered with the insulating heat-resistant layer 6b... Patterning can be performed without damage. In addition, other ohmic whole urine can be tolerated even if the laser output condition is quite large.
The processing conditions are significantly relaxed, making patterning processing by laser irradiation easier.
第９図は第２電極膜４をレーザパターニングした後の状
態を示す模式図である。絶縁耐熱層６ｂ・・・はレーザ
ビーム照射時には下層への熱的損傷を阻止する断熱体と
して作用していたが、かかるレーザビーム照射後、即ち
パターニング後にあっては第２電極膜４及び光活性層３
の混合溶融物７と、光電変換素子５ｂ・・・の第１電極
１１２ｂ・・・との接触に伴う短絡事故を防止する絶縁
体として作用している。FIG. 9 is a schematic diagram showing the state of the second electrode film 4 after laser patterning. The insulating heat-resistant layer 6b... acted as a heat insulator to prevent thermal damage to the underlying layer during laser beam irradiation, but after the laser beam irradiation, that is, after patterning, the second electrode film 4 and the photoactive layer 3
It acts as an insulator to prevent short circuit accidents caused by contact between the mixed melt 7 and the first electrodes 112b of the photoelectric conversion elements 5b.
第１０図は本発明の製造方法により製造された光起電力
装置の他の実施例であり、前述の実施例と異なるところ
は隣接する光電変換素子５ａ、 ５ｂ・・・の直列接続
形態にある。本実施例にあづては第２電極膜４ａ・・・
が直接右隣りの光電変換素子５ｂ・・・において露出す
る第１電極Ｉ！Ｊ２ｂ・・・の露出部１２ｂ・・・と結
合するのではなく、三層構造の接続電極膜８・・・によ
って第２電極膜４ａ・・・と第１電極膜２ｂ・・・とが
間接的に結合しており、従って接続電極膜８・・・が第
２電極膜４ａ・・・の電気的延長部として作用している
。接続電極膜８・・・の三層構造の内分けは、第１電極
膜２ｂ・・・側から、ＴｉまたはＴｉＡｇ、 ＡＩまた
はＡ１合金、及びＴｉまたはＴｉＡｇの順であり、下層
のＴｉまたはＴｉＡｇは、中間層のシート抵抗低減に不
可欠なＡＩまたはＡ１合金が５ｎ０２ 、 ＩＴＯ等の
透光性導電酸化物（ＴＣＯ＋から成る第１電極膜２ｂ・
・・と直接結合した場合にその界面において形成される
高抵抗なＡｌ２Ｏ３となる酸化を防止するためのもので
あり、また上層のＴｉまたはＴｉＡｇは中間層であるＡ
１またはＡ１合金の耐湿膜である。FIG. 10 shows another embodiment of a photovoltaic device manufactured by the manufacturing method of the present invention, and the difference from the above-mentioned embodiment lies in the series connection form of adjacent photoelectric conversion elements 5a, 5b... . In this embodiment, the second electrode film 4a...
The first electrode I! is exposed in the directly adjacent photoelectric conversion element 5b... The second electrode film 4a... and the first electrode film 2b... are indirectly connected by the three-layer connecting electrode film 8... rather than being coupled to the exposed portion 12b... of the J2b... Therefore, the connecting electrode films 8... act as electrical extensions of the second electrode films 4a... The three-layer structure of the connection electrode film 8 is divided into Ti or TiAg, AI or A1 alloy, and Ti or TiAg from the first electrode film 2b side, and the lower layer Ti or TiAg. In the first electrode film 2b, the AI or A1 alloy essential for reducing the sheet resistance of the intermediate layer is 5n02, and the first electrode film 2b is made of a transparent conductive oxide (TCO+) such as ITO.
This is to prevent oxidation that results in high-resistance Al2O3 that is formed at the interface when directly bonded with ..., and the upper layer of Ti or TiAg is the intermediate layer of A.
1 or A1 alloy moisture-resistant membrane.
なお、かかる構成における第２電極膜４ａ・・・はＡｌ
またはＡ１合金であり、第２電極膜４ａ・・・を先の実
施例の如くレーザビームの照射によりパターニングする
と、第１電極１１２ｂ・・・の露出部１２ｂ・・・がレ
ーザビームの照射に曝されることになるので、不要部を
マスクで覆った選択蒸着法により形成される。Note that the second electrode film 4a in this configuration is made of Al
or A1 alloy, and when the second electrode films 4a are patterned by laser beam irradiation as in the previous embodiment, the exposed portions 12b of the first electrodes 112b are exposed to the laser beam irradiation. Therefore, it is formed by selective vapor deposition with unnecessary parts covered with a mask.
かかる選択蒸着法による第２電極膜４ａ・・・の形成は
、直列抵抗を低減せしめるために第１電極膜２ｂ・・・
の露出長は一定長以上の寸法が必要であること、及び次
に被着される接続電極膜８・・・がレーザビームの照射
によりパターニングされるために、隣接間隔部の間隔縮
小を実質的に阻害するものではない。The formation of the second electrode films 4a by such a selective vapor deposition method is the formation of the first electrode films 2b, etc. in order to reduce the series resistance.
The exposed length of the electrode must be at least a certain length, and since the connecting electrode film 8 to be deposited next is patterned by laser beam irradiation, the distance between adjacent spaces can be substantially reduced. It does not interfere with
またＡＩまたはＡ１合金の第２電極膜４全体を前記耐湿
性の高いＴｉまたはＴｉＡｇの如き耐湿金属を上層に備
えた接続電極膜８・・・で被覆する構成としても良い。Alternatively, the entire second electrode film 4 made of AI or A1 alloy may be covered with a connection electrode film 8 having the moisture-resistant metal such as Ti or TiAg as an upper layer.
第１１図は本発明の製造方法により製造された光起電力
装置の他の実施例を示す模式図であり、前述の実施例と
異なるところは隣接する光電変換素子５ａ、 ５ｂ・・
・の直列接続形態にある０本実施例にあっては、光活性
層と第２電極膜とを部分的にレーザビームＬ１の照射に
より熔融させ、その溶融領域９と第１電極膜とを溶着さ
せて、熔融領域９によって第２電極膜４ａ・・・と第１
電極膜２ｂ・・・とを間接的に結合させる構成にしであ
る点である。FIG. 11 is a schematic diagram showing another embodiment of a photovoltaic device manufactured by the manufacturing method of the present invention, and the difference from the previous embodiment is that adjacent photoelectric conversion elements 5a, 5b, . . .
In this embodiment, the photoactive layer and the second electrode film are partially melted by irradiation with the laser beam L1, and the melted region 9 and the first electrode film are welded together. Then, the second electrode film 4a... and the first
There is a certain point in the structure in which the electrode films 2b, . . . are indirectly coupled to each other.
第１２図は本発明の製造方法により製造された光起電力
装置の他の実施例を示す模式図であり、前述の３Ｍの実
施例と異なる点は、絶縁耐熱層の形成部位である。即ち
、本実施例にあっては、絶縁耐熱層が第１電極膜上に形
成されるのではなく、光活性層上に形成される。FIG. 12 is a schematic diagram showing another example of a photovoltaic device manufactured by the manufacturing method of the present invention, and the difference from the above-mentioned 3M example is the location where the insulating heat-resistant layer is formed. That is, in this example, the insulating heat-resistant layer is not formed on the first electrode film but on the photoactive layer.
次にこのような実施例の製造方法について説明する。ま
ず基板１上に第１電極１１１２ａ、 ２ｂ・・・を分離
形成し、各第１電極膜２ａ、 ２ｂ・・・の露出部分を
含んで基板１上に光活性層３ａ、 ３ｂ・・・を分離形
成する。Next, a manufacturing method for such an embodiment will be explained. First, first electrodes 1112a, 2b... are separately formed on the substrate 1, and photoactive layers 3a, 3b... are formed on the substrate 1 including the exposed portions of the respective first electrode films 2a, 2b... Separate and form.
次に第１電極膜２ａ、 ２ｂ・・・上の露出部分に隣接
する光活性層３ａ、 ３ｂ・・・上に、ディスペンサに
よる直接描画方法、またはスクリーン印刷方法により、
絶縁耐熱層６ｂ・・・を厚さ５〜２０μｍ程度形成し、
次いで第７図に示すフローチャートに従って焼付けを行
う。次に光活性層３ａ、 ３ｂ・・・、第１電極膜２ａ
、 ２ｂ・・・の露出部分及び絶縁耐熱層６ｂ・・・上
全面に第２電極膜４を蒸着し、次いで絶縁耐熱層６ｂ・
・・上にレーザビームＬＢを照射して、照射領域の第２
電極膜を除去する。照射領域の光活性層３ｂ・・・上に
は他の構成膜よりも十分に肉厚な絶縁耐熱層６ｂ・・・
が設けられているので、かかるレーザビームＬＢの出力
が多少大きくても絶縁耐熱層６ｂ・・・が焼き切られる
ことがなくレーザビームＬＢの照射に対して絶縁耐熱層
６ｂ・・・は断熱体として作用し、光活性層３ｂ・・・
に熱的損傷１を与えることなく第２電極膜の分離パター
ニングを行うことができる。Next, on the photoactive layers 3a, 3b... adjacent to the exposed portions of the first electrode films 2a, 2b..., by a direct drawing method using a dispenser or a screen printing method,
An insulating heat-resistant layer 6b... is formed to a thickness of about 5 to 20 μm,
Next, baking is performed according to the flowchart shown in FIG. Next, photoactive layers 3a, 3b..., first electrode film 2a
, 2b... and the entire surface of the insulating heat-resistant layer 6b..., and then the insulating heat-resistant layer 6b...
... by irradiating the laser beam LB on the second part of the irradiation area.
Remove the electrode film. On the photoactive layer 3b in the irradiation area, there is an insulating heat-resistant layer 6b that is sufficiently thicker than the other constituent films.
is provided, so that even if the output of the laser beam LB is somewhat large, the insulating heat-resistant layer 6b... will not be burned out, and the insulating heat-resistant layer 6b... will act as a heat insulator against the irradiation of the laser beam LB. The photoactive layer 3b...
Separation patterning of the second electrode film can be performed without causing thermal damage 1 to the second electrode film.
この実施例では前述の３種の実施例と異なり、光活性層
がレーザビームにて熔融されないので、高温に耐えられ
ない材料または高温状態において不純物ガスが発生しや
すい材料を用いて光活性層を形成する場合において有効
である。In this embodiment, unlike the previous three embodiments, the photoactive layer is not melted by a laser beam, so the photoactive layer is made of a material that cannot withstand high temperatures or a material that easily generates impurity gas at high temperatures. It is effective when forming.
なお以上の実施例では、第２電極膜を除°去する際にレ
ーザビームを第２電極膜側から照射する場合について説
明したが、基板が透光性を有する場合においては基板側
からレーザビームを照射して第２電極膜を除去してもよ
い。Note that in the above embodiments, the case where the laser beam is irradiated from the second electrode film side when removing the second electrode film has been described, but if the substrate is transparent, the laser beam is irradiated from the substrate side. The second electrode film may be removed by irradiating with.
また本実施例ではエネルギビームとしてレーザビームを
利用する場合について説明したが、これに限らず電子ビ
ーム等の他のエネルギビームを利用してもよいことは勿
論である。Further, in this embodiment, a case has been described in which a laser beam is used as the energy beam, but the present invention is not limited to this, and it goes without saying that other energy beams such as an electron beam may be used.
以上詳述した如く本発明の製造方法では、第１電極膜上
または光活性層上に絶縁耐熱層を形成し、該絶縁耐熱層
上におけるエネルギビームの照射により第２電極膜を電
気的に分離するので、絶縁耐熱層により下層の膜に熱が
伝わらず、第１電極膜に熱的損傷を与えることがない。As detailed above, in the manufacturing method of the present invention, an insulating heat-resistant layer is formed on the first electrode film or the photoactive layer, and the second electrode film is electrically isolated by irradiating the insulating heat-resistant layer with an energy beam. Therefore, heat is not transmitted to the underlying film due to the insulating heat-resistant layer, and no thermal damage is caused to the first electrode film.
また絶縁耐熱層により、分離された第２電極膜は電気的
に絶縁されるので、隣接する光電変換素子同士において
電気的な短絡事故が発生することがない。Further, since the separated second electrode films are electrically insulated by the insulating heat-resistant layer, an electrical short circuit does not occur between adjacent photoelectric conversion elements.
更に、絶縁耐熱層のバターニングにおいて、レーザビー
ム走査方法またはディスペンサによる直接描画方法を使
用する場合にあっては、任意の形状の曲面へのバクーン
形成が可能となり、例えば太陽電池瓦または規格化され
た所定サイズの基板のモジュール形成を容易に行うこと
ができる。Furthermore, when patterning the insulating heat-resistant layer using a laser beam scanning method or a direct drawing method using a dispenser, it is possible to form a curved surface of any shape, such as a solar cell roof tile or a standardized pattern. It is possible to easily form a module using a substrate of a predetermined size.
第１図は本発明の製造方法により製造された光起電力装
置の一実施例を示す断面図、第２図〜第４図、第６図、
第８図〜第１２図は本発明の製造方法の工程を示す断面
図、第５図、第７図は本発明の製造方法の一部の工程を
示すフローチャート、第１３図は従来の光起電力装置の
断面図、第１４図。
第１５図は従来方法の欠点を説明するための要部断面図
である。
リド・・基板 ２ａ、２ｂ、２ｃ＝第１電極膜 ３ａ、
３ｂ、３ｃ・−・光活性層 ４ａ、４ｂ、４ｃｍ第２電
極膜 ５ａ、５ｂ、５ｃｍ光電変換素子 ６ｂ、 ６ｃ
・・・絶縁耐熱層 ２０・・・ディスペンサ
特許出願人 三洋電機株式会社
代理人 弁理士 河 野 登 夫
ｌ
Ｖ、３ 聞
茅 ４ 記
埠 ５Ｅ
算ワ■
第 ６ 回
第 ｑ 図
第 １０ 記
第 Ｎ ［ＤFIG. 1 is a sectional view showing an embodiment of a photovoltaic device manufactured by the manufacturing method of the present invention, FIGS. 2 to 4, FIG.
8 to 12 are cross-sectional views showing the steps of the manufacturing method of the present invention, FIGS. 5 and 7 are flow charts showing some steps of the manufacturing method of the present invention, and FIG. FIG. 14 is a sectional view of the power device. FIG. 15 is a sectional view of a main part for explaining the drawbacks of the conventional method. Lido...substrate 2a, 2b, 2c = first electrode film 3a,
3b, 3c --- Photoactive layer 4a, 4b, 4cm Second electrode film 5a, 5b, 5cm Photoelectric conversion element 6b, 6c
... Insulating heat-resistant layer 20 ... Dispenser patent applicant Sanyo Electric Co., Ltd. agent Patent attorney Noboru Kono l V, 3 Monkyo 4 Kibo 5E Mathwa ■ 6th q Figure 10 No. N [D
Claims (1)
の順に積層して構成される複数の光電変換素子を有し、
各光電変換素子を電気的に直列接続せしめた光起電力装
置を製造する方法において、 基板上に複数の第１電極膜を分離形成する一方、各第１
電極膜上の所定位置に第１電極膜より狭幅の絶縁耐熱層
を形成し、第１電極膜及び絶縁耐熱層の各露出部分を含
んで基板上に光活性層及び第２電極膜をこの順に積層形
成し、次いで第２電極膜の絶縁耐熱層上の部分にエネル
ギビームを照射して少なくとも第２電極膜を除去して、
第２電極膜を各光電変換素子毎に分離することを特徴と
する光起電力装置の製造方法。 ２、基板上に全芳香族ポリアミド酸溶液を塗布し、次い
で焼付処理を行って前記絶縁耐熱層を形成する特許請求
の範囲第１項記載の光起電力装置の製造方法。 ３、前記焼付処理はエネルギビームを用いて行う特許請
求の範囲第２項記載の光起電力装置の製造方法。 ４、ディスペンサを用いて基板上に描画し、次いで焼付
処理を行って前記絶縁耐熱層を形成する特許請求の範囲
第１項記載の光起電力装置の製造方法。 ５、第１電極膜、光活性層及び第２電極膜を基板上にこ
の順に積層して構成される複数の光電変換素子を有し、
各光電変換素子を電気的に直列接続せしめた光起電力装
置を製造する方法において、 基板上に第１電極膜を分離形成し、第１電極膜の露出部
分を含んで基板上に光活性層を分離形成し、次に各光活
性層上に該光活性層より狭幅の絶縁耐熱層を形成し、第
１電極膜、光活性層及び絶縁耐熱層の各露出部分を含ん
で基板上に第２電極膜を形成し、次いで前記絶縁耐熱層
上の部分の第２電極膜にエネルギビームを照射して第２
電極膜を除去して、第２電極膜を各光電変換素子毎に分
離することを特徴とする光起電力装置の製造方法。 ６、基板上に全芳香族ポリアミド酸溶液を塗布し、次い
で焼付処理を行って前記絶縁耐熱層を形成する特許請求
の範囲第５項記載の光起電力装置の製造方法。 ７、前記焼付処理はエネルギビームを用いて行う特許請
求の範囲第６項記載の光起電力装置の製造方法。 ８、ディスペンサを用いて基板上に描画し、次いで焼付
処理を行って前記絶縁耐熱層を形成する特許請求の範囲
第５項記載の光起電力装置の製造方法。[Claims] 1. A plurality of photoelectric conversion elements configured by laminating a first electrode film, a photoactive layer, and a second electrode film on a substrate in this order;
In a method for manufacturing a photovoltaic device in which photoelectric conversion elements are electrically connected in series, a plurality of first electrode films are separately formed on a substrate, and each first electrode film is separately formed on a substrate.
An insulating heat-resistant layer having a width narrower than that of the first electrode film is formed at a predetermined position on the electrode film, and a photoactive layer and a second electrode film are formed on the substrate including the exposed portions of the first electrode film and the insulating heat-resistant layer. forming layers in order, and then irradiating the portion of the second electrode film on the insulating heat-resistant layer with an energy beam to remove at least the second electrode film,
A method for manufacturing a photovoltaic device, characterized in that a second electrode film is separated for each photoelectric conversion element. 2. The method of manufacturing a photovoltaic device according to claim 1, wherein the insulating heat-resistant layer is formed by applying a wholly aromatic polyamic acid solution onto the substrate and then performing a baking process. 3. The method of manufacturing a photovoltaic device according to claim 2, wherein the baking process is performed using an energy beam. 4. The method for manufacturing a photovoltaic device according to claim 1, wherein the insulating heat-resistant layer is formed by drawing on the substrate using a dispenser and then performing a baking process. 5. A plurality of photoelectric conversion elements configured by laminating a first electrode film, a photoactive layer, and a second electrode film on a substrate in this order,
In a method for manufacturing a photovoltaic device in which photoelectric conversion elements are electrically connected in series, a first electrode film is separately formed on a substrate, and a photoactive layer is formed on the substrate including the exposed portion of the first electrode film. Then, on each photoactive layer, an insulating heat-resistant layer having a width narrower than that of the photoactive layer is formed, and the first electrode film, the photoactive layer, and the exposed portions of the insulating heat-resistant layer are covered on the substrate. A second electrode film is formed, and then an energy beam is irradiated to a portion of the second electrode film on the insulating heat-resistant layer to form a second electrode film.
A method for manufacturing a photovoltaic device, comprising removing an electrode film and separating a second electrode film for each photoelectric conversion element. 6. The method of manufacturing a photovoltaic device according to claim 5, wherein the insulating heat-resistant layer is formed by applying a wholly aromatic polyamic acid solution onto the substrate and then performing a baking treatment. 7. The method of manufacturing a photovoltaic device according to claim 6, wherein the baking process is performed using an energy beam. 8. The method of manufacturing a photovoltaic device according to claim 5, wherein the insulating heat-resistant layer is formed by drawing on the substrate using a dispenser and then performing a baking process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62095683A JPS63261762A (en) | 1987-04-17 | 1987-04-17 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62095683A JPS63261762A (en) | 1987-04-17 | 1987-04-17 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63261762A true JPS63261762A (en) | 1988-10-28 |
Family
ID=14144292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62095683A Pending JPS63261762A (en) | 1987-04-17 | 1987-04-17 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63261762A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397272A (en) * | 1989-09-11 | 1991-04-23 | Sanyo Electric Co Ltd | Formation of pattern |
| JPH03127867A (en) * | 1989-10-13 | 1991-05-30 | Sanyo Electric Co Ltd | Photovoltaic device and manufacture thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56140694A (en) * | 1980-04-03 | 1981-11-04 | Nippon Telegraph & Telephone | Method of manufacturing circuit board |
| JPS5966190A (en) * | 1982-10-07 | 1984-04-14 | 日本電気株式会社 | Method of producing printed circuit board |
| JPS61280679A (en) * | 1985-05-02 | 1986-12-11 | Sanyo Electric Co Ltd | Method of manufacturing photovoltaic device |
| JPS6233477A (en) * | 1985-08-07 | 1987-02-13 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
-
1987
- 1987-04-17 JP JP62095683A patent/JPS63261762A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56140694A (en) * | 1980-04-03 | 1981-11-04 | Nippon Telegraph & Telephone | Method of manufacturing circuit board |
| JPS5966190A (en) * | 1982-10-07 | 1984-04-14 | 日本電気株式会社 | Method of producing printed circuit board |
| JPS61280679A (en) * | 1985-05-02 | 1986-12-11 | Sanyo Electric Co Ltd | Method of manufacturing photovoltaic device |
| JPS6233477A (en) * | 1985-08-07 | 1987-02-13 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397272A (en) * | 1989-09-11 | 1991-04-23 | Sanyo Electric Co Ltd | Formation of pattern |
| JPH03127867A (en) * | 1989-10-13 | 1991-05-30 | Sanyo Electric Co Ltd | Photovoltaic device and manufacture thereof |
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