JPH0312474B2 - - Google Patents

Info

Publication number
JPH0312474B2
JPH0312474B2 JP57087418A JP8741882A JPH0312474B2 JP H0312474 B2 JPH0312474 B2 JP H0312474B2 JP 57087418 A JP57087418 A JP 57087418A JP 8741882 A JP8741882 A JP 8741882A JP H0312474 B2 JPH0312474 B2 JP H0312474B2
Authority
JP
Japan
Prior art keywords
light emitting
region
semiconductor
photodiode
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57087418A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58204574A (ja
Inventor
Takeshi Koseki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57087418A priority Critical patent/JPS58204574A/ja
Publication of JPS58204574A publication Critical patent/JPS58204574A/ja
Publication of JPH0312474B2 publication Critical patent/JPH0312474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
JP57087418A 1982-05-24 1982-05-24 複合型光半導体装置 Granted JPS58204574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57087418A JPS58204574A (ja) 1982-05-24 1982-05-24 複合型光半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087418A JPS58204574A (ja) 1982-05-24 1982-05-24 複合型光半導体装置

Publications (2)

Publication Number Publication Date
JPS58204574A JPS58204574A (ja) 1983-11-29
JPH0312474B2 true JPH0312474B2 (enExample) 1991-02-20

Family

ID=13914324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087418A Granted JPS58204574A (ja) 1982-05-24 1982-05-24 複合型光半導体装置

Country Status (1)

Country Link
JP (1) JPS58204574A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253283A (ja) * 1984-05-29 1985-12-13 Toshiba Corp 半導体発光素子
US5012301A (en) * 1990-02-22 1991-04-30 Northern Telecom Limited Three terminal semiconductor device
JPH0793419B2 (ja) * 1992-11-04 1995-10-09 日本電気株式会社 受光発光集積素子
DE102010034665B4 (de) 2010-08-18 2024-10-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
US9478691B2 (en) 2011-10-31 2016-10-25 Kyocera Corporation Light-receiving and emitting device including integrated light-receiving and emitting element and sensor
JP2020503679A (ja) 2016-12-22 2020-01-30 ルミレッズ リミテッド ライアビリティ カンパニー 動作フィードバックのためのセンサセグメントを備えた発光ダイオード
US10205064B2 (en) * 2016-12-22 2019-02-12 Lumileds Llc Light emitting diodes with sensor segment for operational feedback

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5886788A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子

Also Published As

Publication number Publication date
JPS58204574A (ja) 1983-11-29

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