JPH0312454B2 - - Google Patents
Info
- Publication number
- JPH0312454B2 JPH0312454B2 JP56176543A JP17654381A JPH0312454B2 JP H0312454 B2 JPH0312454 B2 JP H0312454B2 JP 56176543 A JP56176543 A JP 56176543A JP 17654381 A JP17654381 A JP 17654381A JP H0312454 B2 JPH0312454 B2 JP H0312454B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- etched
- sio
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 9
- 150000002367 halogens Chemical class 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 7
- 150000001721 carbon Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- -1 CF 4 Chemical class 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17654381A JPS5878427A (ja) | 1981-11-05 | 1981-11-05 | ドライエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17654381A JPS5878427A (ja) | 1981-11-05 | 1981-11-05 | ドライエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5878427A JPS5878427A (ja) | 1983-05-12 |
| JPH0312454B2 true JPH0312454B2 (US20080293856A1-20081127-C00150.png) | 1991-02-20 |
Family
ID=16015423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17654381A Granted JPS5878427A (ja) | 1981-11-05 | 1981-11-05 | ドライエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5878427A (US20080293856A1-20081127-C00150.png) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4468285A (en) * | 1983-12-22 | 1984-08-28 | Advanced Micro Devices, Inc. | Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide |
| JPS60145624A (ja) * | 1984-01-10 | 1985-08-01 | Nec Corp | パタ−ンの形成方法 |
| US4786360A (en) * | 1987-03-30 | 1988-11-22 | International Business Machines Corporation | Anisotropic etch process for tungsten metallurgy |
| US4832787A (en) * | 1988-02-19 | 1989-05-23 | International Business Machines Corporation | Gas mixture and method for anisotropic selective etch of nitride |
| JPH0294520A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | ドライエッチング方法 |
| JPH02177432A (ja) * | 1988-12-28 | 1990-07-10 | Fujitsu Ltd | ドライ・エッチング方法 |
| JP4925314B2 (ja) * | 2007-05-30 | 2012-04-25 | カシオ計算機株式会社 | 窒化シリコン膜のドライエッチング方法および薄膜トランジスタの製造方法 |
| JP5264383B2 (ja) * | 2008-09-17 | 2013-08-14 | 東京エレクトロン株式会社 | ドライエッチング方法 |
| JP5862012B2 (ja) * | 2010-02-01 | 2016-02-16 | セントラル硝子株式会社 | ドライエッチング剤及びドライエッチング方法 |
| WO2011093263A1 (ja) | 2010-02-01 | 2011-08-04 | セントラル硝子株式会社 | ドライエッチング剤及びそれを用いたドライエッチング方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5494196A (en) * | 1977-12-30 | 1979-07-25 | Ibm | Metallic layer removing method |
| JPS56125838A (en) * | 1980-03-07 | 1981-10-02 | Hitachi Ltd | Etching method |
| JPS5726171A (en) * | 1980-07-24 | 1982-02-12 | Nec Corp | Dry etching method for molybdenum |
-
1981
- 1981-11-05 JP JP17654381A patent/JPS5878427A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5494196A (en) * | 1977-12-30 | 1979-07-25 | Ibm | Metallic layer removing method |
| JPS56125838A (en) * | 1980-03-07 | 1981-10-02 | Hitachi Ltd | Etching method |
| JPS5726171A (en) * | 1980-07-24 | 1982-02-12 | Nec Corp | Dry etching method for molybdenum |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5878427A (ja) | 1983-05-12 |
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