JPH0311127B2 - - Google Patents

Info

Publication number
JPH0311127B2
JPH0311127B2 JP55110912A JP11091280A JPH0311127B2 JP H0311127 B2 JPH0311127 B2 JP H0311127B2 JP 55110912 A JP55110912 A JP 55110912A JP 11091280 A JP11091280 A JP 11091280A JP H0311127 B2 JPH0311127 B2 JP H0311127B2
Authority
JP
Japan
Prior art keywords
transistor
terminal
signal
power supply
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55110912A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5735422A (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11091280A priority Critical patent/JPS5735422A/ja
Publication of JPS5735422A publication Critical patent/JPS5735422A/ja
Publication of JPH0311127B2 publication Critical patent/JPH0311127B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP11091280A 1980-08-12 1980-08-12 Semiconductor circuit Granted JPS5735422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11091280A JPS5735422A (en) 1980-08-12 1980-08-12 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11091280A JPS5735422A (en) 1980-08-12 1980-08-12 Semiconductor circuit

Publications (2)

Publication Number Publication Date
JPS5735422A JPS5735422A (en) 1982-02-26
JPH0311127B2 true JPH0311127B2 (enrdf_load_stackoverflow) 1991-02-15

Family

ID=14547782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11091280A Granted JPS5735422A (en) 1980-08-12 1980-08-12 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS5735422A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4575823A (en) * 1982-08-17 1986-03-11 Westinghouse Electric Corp. Electrically alterable non-volatile memory
JPS6050697A (ja) * 1983-08-30 1985-03-20 Toshiba Corp 半導体集積回路
GB2156974B (en) * 1984-04-02 1988-10-05 Dow Chemical Co Combined thermal analyzer and x-ray diffractometer
JPS6161295A (ja) * 1984-08-31 1986-03-29 Fujitsu Ltd 半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5379365A (en) * 1976-12-23 1978-07-13 Nec Corp Capacitive load driving unit
JPS5423204A (en) * 1977-07-21 1979-02-21 Sato Yoshio Fluid pump

Also Published As

Publication number Publication date
JPS5735422A (en) 1982-02-26

Similar Documents

Publication Publication Date Title
US4651304A (en) EPROM memory device having a test circuit
KR0155078B1 (ko) 강전계용의 mos 회로를 갖춘 반도체 회로
JP2723278B2 (ja) ハイキャパシタンス線プログラミング用デコーダ・ドライバ回路
EP0311088B1 (en) Semiconductor integrated circuit device having power down mode
JPH08321196A (ja) 集積回路形式メモリの読出のための電流検出回路
KR930001654B1 (ko) 반도체 메모리 집적회로
KR910010188B1 (ko) 반도체 집적회로
US5663908A (en) Data input/output circuit for performing high speed memory data read operation
US4817055A (en) Semiconductor memory circuit including bias voltage generator
US4730133A (en) Decoder circuit of a semiconductor memory device
US5179537A (en) Semiconductor memory device having monitoring function
US4198700A (en) Column decode circuit for random access memory
EP0377840A2 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
EP0317939B1 (en) Input circuit incorporated in a semiconductor device
JPH0311127B2 (enrdf_load_stackoverflow)
US5691944A (en) Non-volatile semiconductor memory device
KR100339656B1 (ko) 메모리구동장치
JP3147062B2 (ja) センスアンプ回路
US6463544B2 (en) Method for powering down unused configuration bits to minimize power consumption
KR100282761B1 (ko) I/o 클램프 회로를 구비한 반도체 메모리 장치
WO1998015060A1 (en) High voltage level shifting cmos buffer
JPS63263693A (ja) デコ−ダ回路
JP2001067886A (ja) 半導体記憶装置
JPH0519239B2 (enrdf_load_stackoverflow)
JPH11260087A (ja) 多値レベルの不揮発性メモリデバイスにおける復号回路用高電圧駆動回路および不揮発性メモリの選択されたワ―ド線を駆動する方法