JPH0311108B2 - - Google Patents

Info

Publication number
JPH0311108B2
JPH0311108B2 JP60215603A JP21560385A JPH0311108B2 JP H0311108 B2 JPH0311108 B2 JP H0311108B2 JP 60215603 A JP60215603 A JP 60215603A JP 21560385 A JP21560385 A JP 21560385A JP H0311108 B2 JPH0311108 B2 JP H0311108B2
Authority
JP
Japan
Prior art keywords
layer
gaas
barrier
quantum well
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60215603A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6276565A (ja
Inventor
Yasumi Hikosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21560385A priority Critical patent/JPS6276565A/ja
Priority to EP86401845A priority patent/EP0214047B1/fr
Priority to DE86401845T priority patent/DE3689433T2/de
Publication of JPS6276565A publication Critical patent/JPS6276565A/ja
Priority to US07/593,502 priority patent/US5023674A/en
Publication of JPH0311108B2 publication Critical patent/JPH0311108B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP21560385A 1985-08-20 1985-09-28 電界効果型トランジスタ Granted JPS6276565A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP21560385A JPS6276565A (ja) 1985-09-28 1985-09-28 電界効果型トランジスタ
EP86401845A EP0214047B1 (fr) 1985-08-20 1986-08-20 Transistor à effet de champ
DE86401845T DE3689433T2 (de) 1985-08-20 1986-08-20 Feldeffekttransistor.
US07/593,502 US5023674A (en) 1985-08-20 1990-10-04 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21560385A JPS6276565A (ja) 1985-09-28 1985-09-28 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS6276565A JPS6276565A (ja) 1987-04-08
JPH0311108B2 true JPH0311108B2 (fr) 1991-02-15

Family

ID=16675163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21560385A Granted JPS6276565A (ja) 1985-08-20 1985-09-28 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JPS6276565A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0314836A1 (fr) * 1987-11-06 1989-05-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Dispositif semi-conducteur, en particulier transistor à électrons chauds
JP2695832B2 (ja) * 1988-04-20 1998-01-14 株式会社東芝 ヘテロ接合型電界効果トランジスタ
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
CN102369594A (zh) * 2009-04-06 2012-03-07 住友化学株式会社 半导体基板、半导体基板的制造方法、半导体基板的判定方法以及电子器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371949A (en) * 1976-12-06 1978-06-26 Ideal Toy Corp Toy vehicle and toy vehicle game

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371949A (en) * 1976-12-06 1978-06-26 Ideal Toy Corp Toy vehicle and toy vehicle game

Also Published As

Publication number Publication date
JPS6276565A (ja) 1987-04-08

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