JPH03105807A - Laminate membrane of oxide superconductor and oxide magnetic substance - Google Patents
Laminate membrane of oxide superconductor and oxide magnetic substanceInfo
- Publication number
- JPH03105807A JPH03105807A JP1242070A JP24207089A JPH03105807A JP H03105807 A JPH03105807 A JP H03105807A JP 1242070 A JP1242070 A JP 1242070A JP 24207089 A JP24207089 A JP 24207089A JP H03105807 A JPH03105807 A JP H03105807A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide
- oxide superconductor
- magnetic material
- laminated thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 41
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 20
- 239000000126 substance Substances 0.000 title abstract 7
- 239000012528 membrane Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 34
- 239000000696 magnetic material Substances 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000011575 calcium Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 230000005303 antiferromagnetism Effects 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 230000005307 ferromagnetism Effects 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 2
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 230000003993 interaction Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 notrium Chemical compound 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Thin Magnetic Films (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、酸化物超伝導材料、及び、その応用に関する
．
〔従来の技術〕
銅を含む酸化物超伝導体は臨界温度Ｔｃが従来の金属系
の超伝導体にくらべてはるかに高く、液体窒素を冷媒と
して用いることができるという利点をもつが、臨界電流
密度Ｊｃが低いという欠点がある。一方、この銅を含む
酸化物超伝導体の超伝導状態は反強磁性絶縁体に正孔を
ドープすることにより出現しており、超伝導メカニズム
においてもスピン間の磁気的な相互作用が重要な働きを
担っていると考えられている。このことから、銅を含む
酸化物超伝導体のＴｃを，さらに、高めるための、ある
いは．Ｊｃを改善するための方法として酸化物超伝導体
と磁性体の近接的な相互作用を利用することは有力であ
ると考えられる。特に、薄膜に酸化物超伝導体と磁性体
を積層することはこの相互作用を利用する上で有力な方
法であると考えられる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to oxide superconducting materials and their applications. [Prior art] Oxide superconductors containing copper have the advantage that their critical temperature Tc is much higher than that of conventional metal-based superconductors, and liquid nitrogen can be used as a coolant; It has a drawback that the density Jc is low. On the other hand, the superconducting state of this copper-containing oxide superconductor appears by doping holes into an antiferromagnetic insulator, and the magnetic interaction between spins is also important in the superconducting mechanism. It is believed that it plays a role. From this, it is possible to further increase the Tc of an oxide superconductor containing copper or... It is considered to be effective to utilize the close interaction between an oxide superconductor and a magnetic material as a method for improving Jc. In particular, laminating an oxide superconductor and a magnetic material in a thin film is considered to be an effective method for utilizing this interaction.
しかし、酸化物超伝導体薄膜を形成するには、成膜時の
支持体（基板）の温度を６００℃以上にするか，或膜後
に８００℃以上で熱処理をする必要があるため、積層膜
を形成する際に金属，合金の磁性体を用いると酸化物超
伝導体との界面で拡散，反応してしまい，異相の形成、
酸化物超伝導体，及び、磁性体の組成ずれ、界面の急峻
性の喪失といった問題を生じる．
〔課題を解決するための手段〕
本発明は、上記の問題点を解決するためのものであり，
前記の酸化物超伝導体と磁性体の積層薄膜において、磁
性体として金属，合金ではなく、酸化物磁性体を用いる
ことを特徴とする。磁性体として酸化物を用いることに
より、酸化物超伝導体薄膜を形成する際の高温プロセス
においても、界面での拡散，反応を抑えることができ、
急峻な界面を形成することができる。また，酸化物磁性
体は酸化物超伝導体と類似の結晶構造をもつものが多い
ので、適宜な結晶構造，及び、格子定数をもつ酸化物磁
性体を選ぶことにより，界面での結晶構造的欠陥の少な
い積層薄膜を形成することができる。However, in order to form an oxide superconductor thin film, it is necessary to raise the temperature of the support (substrate) to 600°C or higher during film formation, or to perform heat treatment at 800°C or higher after the film is formed. If a magnetic material such as a metal or alloy is used to form a superconductor, it will diffuse and react at the interface with the oxide superconductor, resulting in the formation of a different phase,
This causes problems such as compositional shifts in oxide superconductors and magnetic materials, and loss of steepness at interfaces. [Means for Solving the Problems] The present invention is intended to solve the above problems.
The laminated thin film of an oxide superconductor and a magnetic material is characterized in that an oxide magnetic material is used instead of a metal or an alloy as the magnetic material. By using oxide as the magnetic material, diffusion and reactions at the interface can be suppressed even during the high-temperature process when forming oxide superconductor thin films.
A steep interface can be formed. In addition, many oxide magnetic materials have a crystal structure similar to that of oxide superconductors, so by selecting an oxide magnetic material with an appropriate crystal structure and lattice constant, it is possible to improve the crystal structure at the interface. A laminated thin film with few defects can be formed.
この積層構造は、第１図，及び、第２図で示すように，
酸化物磁性体層が酸化物超伝導体層の上であっても下で
あってもかまわない．あるいは、第３図で示すように，
酸化物磁性体層と酸化物超伝導体層を，順次、交互に積
層することによって多層膜を形成することもできる。ま
た、第４図で示すように，酸化物磁性体層を二枚の酸化
物超伝導体層ではさんだ三層構造を形成することにより
、「トンネル現象の物理と応用」 （培風館， １９８
７ｐ．１７７〜ｐ．１８６）で詳述しているような磁性
バリア・トンネル接合素子を構成することができる．こ
の場合，磁性体層として酸化物磁性体を用いることによ
り、酸化物超伝導体層との界面での反応の少ない良好な
素子構造をつくることができる。This laminated structure, as shown in Figures 1 and 2,
It does not matter whether the oxide magnetic layer is above or below the oxide superconductor layer. Or, as shown in Figure 3,
A multilayer film can also be formed by sequentially and alternately stacking oxide magnetic layers and oxide superconductor layers. In addition, as shown in Figure 4, by forming a three-layer structure in which an oxide magnetic layer is sandwiched between two oxide superconductor layers, "Physics and Applications of Tunneling Phenomenon" (Baifukan, 198
7p. 177-p. It is possible to construct a magnetic barrier tunnel junction device as described in detail in 186). In this case, by using an oxide magnetic material as the magnetic layer, it is possible to create a good device structure with less reaction at the interface with the oxide superconductor layer.
本発明による積層薄膜を形成する際に，酸化物超伝導体
層としては既知のすべての銅を含む酸化物超伝導体を用
いることができるし、あるいは，Ｔｃは低いが、Ｂ ａ
− Ｐ ｂ − Ｂ ｉ一〇系、Ｂａ−Ｋ−Ｂｉ−０
系の酸化物超伝導体を用いることもできる．また、酸化
物磁性体層は，特に、Ｌａ−Ｃａ−Ｍｎ−０系は酸化物
超伝導体層との界面反応が少なく有力である。When forming the laminated thin film according to the present invention, all known copper-containing oxide superconductors can be used as the oxide superconductor layer, or alternatively, although Tc is low, B a
- P b - Bi 10 series, Ba-K-Bi-0
It is also possible to use oxide superconductors. Further, as for the oxide magnetic layer, in particular, the La-Ca-Mn-0 system is effective because it has little interfacial reaction with the oxide superconductor layer.
本発明による酸化物磁性体と酸化物超伝導体の積層薄膜
は，界面での相互の原子の拡散による反応が少ないため
、異相を生じない急峻な界面を形成することができる。The laminated thin film of an oxide magnetic material and an oxide superconductor according to the present invention has little reaction due to mutual diffusion of atoms at the interface, so it is possible to form a steep interface that does not produce different phases.
また、酸化物磁性体として酸化物超伝導体と格子定数の
整合性のよいものを選ぶことによって、界面の結晶構造
的欠陥の少ない積Ｎ薄嘆を形成することができる。この
ような良好な界面をもつ積層薄膜によって、例えば、磁
性バリア・トンネル接合素子の特性を向上させることが
できる。Furthermore, by selecting an oxide magnetic material that has good lattice constant matching with the oxide superconductor, it is possible to form a product N thin film with fewer crystalline defects at the interface. A laminated thin film having such a good interface can improve the characteristics of, for example, a magnetic barrier tunnel junction element.
以下、本発明を実施例を用いて説明する。酸化物超伝導
体層、及び、酸化物磁性体層の形成方法は、このほかに
、イオンビームスパッタリング法，電子ビーム蒸着法等
があり，また，これらの方法を組合せて用いてもよい。The present invention will be explained below using examples. Other methods for forming the oxide superconductor layer and the oxide magnetic layer include ion beam sputtering, electron beam evaporation, and a combination of these methods.
（１）高周波スパッタリング装置にランタン，カルシウ
ム，マンガン，酸素からなる焼結体ターゲットを装着す
る。この焼結体ターゲットの組成は、Ｌａ ：Ｃａ ：
Ｍｎ＝０．３ ： ０．７ ： １となるようにする
。ターゲットの対向位置に５順×２ ０ ｍ Ｘ ０
． ５ ｍの大きさの酸化マグネシウム（ＭｇＯ）単結
晶を支持体（基板）として固定する。２×１０″″’Ｔ
ｏｒｒ程度にまで排気した後，支持体の表面温度を６０
０℃に保ちつつ、アルゴンを１×１０″″’Ｔｏｒｒの
圧力まで導入する。(1) A sintered target made of lanthanum, calcium, manganese, and oxygen is attached to a high-frequency sputtering device. The composition of this sintered target is La:Ca:
Set Mn=0.3:0.7:1. 5 times in the opposite position of the target x 2 0 m x 0
．． A magnesium oxide (MgO) single crystal with a size of 5 m is fixed as a support (substrate). 2×10″″T
After evacuation to about orr, the surface temperature of the support was set to 60
While maintaining the temperature at 0° C., argon is introduced to a pressure of 1×10″″’ Torr.
１３．５６ＭＨｚ ，出力２００Ｗの高周波グロー放
電により．Ｌａ−Ｃａ−Ｍｎ一〇薄膜を１μｍの厚みま
で堆積する。この膜を空気中９２０℃で１時間熱処理す
ることにより、ＭｇＯ基板上にＬ ａ ｏ．ｓＣ ａ
０．７Ｍ ｎ Ｏ ｓ膜を形成することができる。By high frequency glow discharge of 13.56MHz, output 200W. A La-Ca-Mn 10 thin film is deposited to a thickness of 1 μm. By heat-treating this film at 920°C in air for 1 hour, L ao. sCa
A 0.7M nOs film can be formed.
（２）このスパッタリング装置にイットリウム，ノくリ
ウム，銅９酸素からなる焼結体ターゲットを装着する．
この焼結体ターゲットの組或は、Ｙ：Ｂａ：Ｃｕ＝１：
２：４．５ となるようにする。ターゲットの対向位
置に、（１）で作製したＬ ａ ｏ．ａｃ ａ ０．７
Ｍ ｎ Ｏ ａ膜を堆積したＭｇＯ単結晶基板を固定す
る。２ Ｘ １ ０””Ｔｏｒｒ程度にまで排気した後
、支持体の表面温度を６００℃に保ちつつ、アルゴンを
１×１０−４ＴＯｒｒの圧力まで導入する。１３．５６
ＭＨｚ．出力２００Ｗの高周波グロー放電により、ＹＢ
ａ−Ｃｕ−Ｏ薄膜を１μｍの厚みまで堆積する。この膜
を空気中８５０℃で一時間熱処理することにより、Ｌａ
ｏ．ａＣａｏ．７ＭｎＯａ膜上にＹＢａｚｃｕａｏｙを
形成することができる。（１）及び（２）の手順で作製
したＹ Ｂａ２ＣｕａＯｙ／ Ｌａｏ．ａＣａｏ．７Ｍ
ｎ０３積層膜を試料Ａとする。(2) A sintered target made of yttrium, notrium, copper and 9 oxygen is attached to this sputtering device.
This sintered target set or Y:Ba:Cu=1:
The ratio should be 2:4.5. At a position opposite to the target, place the L a o. ac a 0.7
An MgO single crystal substrate on which a MnOa film has been deposited is fixed. After evacuation to about 2×10” Torr, argon is introduced to a pressure of 1×10 −4 Torr while maintaining the surface temperature of the support at 600° C. 13.56
MHz. YB
Deposit a-Cu-O thin film to a thickness of 1 μm. By heat-treating this film in air at 850°C for one hour, La
o. aCao. YBazcuaoy can be formed on the 7MnOa film. Y Ba2CuaOy/Lao. prepared by steps (1) and (2). aCao. 7M
Sample A is the n03 laminated film.
（３）スパッタリング装置にイットリウム，バリウム，
銅，酸素からなる焼結体ターゲットを装着する。この焼
結体ターゲットの組成は、Ｙ：Ｂａ：Ｃｕ＝１：２：４
．５ となるようにする。(3) Yttrium, barium,
A sintered target made of copper and oxygen is attached. The composition of this sintered target is Y:Ba:Cu=1:2:4
．． 5.
夕一ゲットの対向位置にＭｇＯ単結晶基板を固定する。An MgO single crystal substrate is fixed at a position opposite to the Yuichi get.
２×１０″″’Ｔｏｒｒ程度にまで排気した後，基板の
表面温度を６００℃に保ちつつ、アルゴンをＩ Ｘ １
０”−’Ｔｏｒｒの圧力まで導入する。After exhausting to about 2×10'''' Torr, argon was pumped to I
A pressure of 0''-'Torr is introduced.
１３．５６ＭＨｚ ，出力２００Ｗの高周波グロー放
電により． Ｙ−Ｂａ−Ｃｕ−０＠膜を１μｍの厚みま
で堆積する。この膜を空気中９００℃で一時間熱処理す
ることにより、Ｍ ｇ’ ０基板上にＹＢａｚＣｕａ○
ｙを形成することができる。By high frequency glow discharge of 13.56MHz, output 200W. A Y-Ba-Cu-0@ film is deposited to a thickness of 1 μm. By heat-treating this film at 900°C in air for one hour, YBazCua○ was deposited on the M g' 0 substrate.
y can be formed.
この手順で作製したＹ Ｂ ａ ２Ｃ ｕ ａｏｙ単層
膜を試料Ｂとする．
（４）電子ビーム蒸着装置を用いてＭｇ○単結晶基板上
に１μｍの厚さのＭｎ薄膜を堆積する。次に，この膜を
（３）で用いたスパッタリング装置に取り付ける。２
Ｘ １ ０”Ｔｏｒｒ程度にまで排気した後、基板の表
面温度を６００℃に保ちつつ、アルゴンをＩ Ｘ １
０−’Ｔｏｒｒの圧力まで導入する。Sample B is the YBa 2C u aoy monolayer film prepared by this procedure. (4) Deposit a 1 μm thick Mn thin film on a Mg◯ single crystal substrate using an electron beam evaporation device. Next, this film is attached to the sputtering device used in (3). 2
After exhausting to about X 1 0” Torr, argon was pumped to I
A pressure of 0-'Torr is introduced.
１３．５６ＭＨｚ ．出力２ｏｏＷの高周波グロー放
電により、Ｙ−Ｂａ−Ｃｕ−０薄膜を１μｍの厚みまで
堆積する。この膜を空気中８５０℃で一時間熱処理する
ことにより、ＹＢａｚＣｕ３０ｙ／ Ｍ． ｎ積層膜を
形成することができる６これを試料Ｃとする．
（５）試料Ａ，Ｂ，Ｃについて四端子法により比抵抗の
温度特性（ρ−Ｔ特性）を測定する。その結果を第５図
に示す．これによると、試料Ａは試料Ｂに比べＴｃがわ
ずかに高くなっていることがわかる。一方、試料Ｃでは
試料Ｂに比べＴｃは低下し、遷移幅も大きくなっている
ことがわかる。13.56MHz. A Y-Ba-Cu-0 thin film is deposited to a thickness of 1 μm by high-frequency glow discharge with an output of 2 ooW. By heat-treating this film at 850°C in air for one hour, YBazCu30y/M. A laminated film can be formed.6 This is designated as sample C. (5) Measure the temperature characteristics of specific resistance (ρ-T characteristics) for samples A, B, and C using the four-terminal method. The results are shown in Figure 5. According to this, it can be seen that sample A has a slightly higher Tc than sample B. On the other hand, it can be seen that in sample C, Tc is lower than in sample B, and the transition width is also larger.
（６）試料Ａ及びＣについて、酸化物超伝導体と磁性体
の界面の急峻性を調べるために、シムス（ＳＩＭＳ）に
よる界面付近の組成分析を行なった．その結果を第６図
に示す．試料Ａでは界面付近での各元素の拡散は比較的
小さいが、試料Ｃでは著しく大きくなっていることがわ
かる．第５図において、試料Ｃのρ一Ｔ特性が著しく劣
っていたのはこのためではないかと考えられる。(6) For samples A and C, composition analysis near the interface was performed using SIMS to investigate the steepness of the interface between the oxide superconductor and the magnetic material. The results are shown in Figure 6. It can be seen that in sample A, the diffusion of each element near the interface is relatively small, but in sample C it is significantly large. This is considered to be the reason why the ρ-T characteristic of sample C in FIG. 5 was extremely poor.
本発明によれば，酸化物超伝導体と酸化物磁性体との積
層により、反応の小さい急峻な界面を形成することがで
きる．According to the present invention, by stacking an oxide superconductor and an oxide magnetic material, a steep interface with low reaction can be formed.
第１図は本発明の一実施例の説明図、第２図は本発明の
第二の実施例の説明図、第３図は本発明の第三の実施例
の説明図，第４図は本発明の第四の実施例の説明図、第
５図は本発明の第五の実施例の説明図、第６図は第六の
実施例の説明図である．
１・・・酸化物磁性体、
２・・・酸化物超伝導体、
３・・・支
第
１
図
第５図
第
２
図
膜釆面かうのｉ末さ（仕怠≠ｆ立２Fig. 1 is an explanatory diagram of one embodiment of the present invention, Fig. 2 is an explanatory diagram of a second embodiment of the invention, Fig. 3 is an explanatory diagram of a third embodiment of the invention, and Fig. 4 is an explanatory diagram of a third embodiment of the invention. FIG. 5 is an explanatory diagram of the fourth embodiment of the present invention, FIG. 5 is an explanatory diagram of the fifth embodiment of the present invention, and FIG. 6 is an explanatory diagram of the sixth embodiment. 1... Oxide magnetic material, 2... Oxide superconductor, 3... Support 1 Figure 5 Figure 2 Figure 2.
Claims (1)
特徴とする積層薄膜。 ２、支持体上に形成した酸化物超伝導体薄膜上に酸化物
磁性体薄膜を形成することを特徴とする積層薄膜。 ３、支持体上に形成した酸化物磁性体薄膜上に酸化物超
伝導体薄膜を形成することを特徴とする積層薄膜。 ４、支持体上に形成した酸化物超伝導体薄膜上に酸化物
磁性体薄膜を形成し、さらに、その上に酸化物超伝導体
薄膜を形成した三層構造を有することを特徴とする積層
薄膜。 ５、酸化物超伝導体と酸化物磁性体を交互に積層するこ
とにより形成された多層構造を有することを特徴とする
積層薄膜。 ６、前記酸化物磁性体が強磁性を示すことを特徴とする
請求項１、２、３、４または５に記載の積層薄膜。 ７、前記酸化物磁性体が反強磁性を示すことを特徴とす
る請求項１、２、３、４および５に記載の積層薄膜。 ８、前記酸化物磁性体がランタン、カルシウム、マンガ
ン、酸素により構成されることを特徴とする請求項１、
２、３、４または５に記載の積層薄膜。 ９、前記酸化物磁性体がＬａ＿１＿−＿ｘＣａ＿ｘＭｎ
Ｏ＿３（ｘ＝０．０５〜０．９５）であることを特徴と
する請求項１、２、３、４または５に記載の積層薄膜。 １０、前記酸化物磁性体の結晶構造がペロブスカイト構
造であることを特徴とする請求項１ないし９に記載の積
層薄膜。 １１、前記酸化物超伝導体が銅を含むことを特徴とする
請求項１ないし１０に記載の積層薄膜。 １２、前記酸化物超伝導体がイットリウムあるいは希土
類元素、バリウム、銅、酸素により構成されることを特
徴とする請求項１ないし１１に記載の積層薄膜。 １３、前記酸化物超伝導体がビスマス、鉛、ストロンチ
ウム、カルシウム、銅、酸素により構成されることを特
徴とする請求項１ないし１１に記載の積層薄膜。 １４、請求項１ないし１３に記載の積層薄膜をもちいて
形成されることを特徴とする磁性バリア・トンネル接合
素子。[Claims] 1. A laminated thin film characterized by laminating an oxide superconductor and an oxide magnetic material. 2. A laminated thin film characterized in that an oxide magnetic thin film is formed on an oxide superconductor thin film formed on a support. 3. A laminated thin film characterized in that an oxide superconductor thin film is formed on an oxide magnetic thin film formed on a support. 4. A laminate having a three-layer structure in which an oxide magnetic thin film is formed on an oxide superconductor thin film formed on a support, and an oxide superconductor thin film is further formed thereon. Thin film. 5. A laminated thin film characterized by having a multilayer structure formed by alternately laminating an oxide superconductor and an oxide magnetic material. 6. The laminated thin film according to claim 1, 2, 3, 4, or 5, wherein the oxide magnetic material exhibits ferromagnetism. 7. The laminated thin film according to claims 1, 2, 3, 4 and 5, wherein the oxide magnetic material exhibits antiferromagnetism. 8. Claim 1, wherein the oxide magnetic material is composed of lanthanum, calcium, manganese, and oxygen.
6. The laminated thin film according to 2, 3, 4 or 5. 9. The oxide magnetic material is La_1_-_xCa_xMn
6. The laminated thin film according to claim 1, 2, 3, 4, or 5, characterized in that O_3 (x=0.05 to 0.95). 10. The laminated thin film according to any one of claims 1 to 9, wherein the crystal structure of the oxide magnetic material is a perovskite structure. 11. The laminated thin film according to any one of claims 1 to 10, wherein the oxide superconductor contains copper. 12. The laminated thin film according to any one of claims 1 to 11, wherein the oxide superconductor is composed of yttrium, a rare earth element, barium, copper, and oxygen. 13. The laminated thin film according to any one of claims 1 to 11, wherein the oxide superconductor is composed of bismuth, lead, strontium, calcium, copper, and oxygen. 14. A magnetic barrier tunnel junction element formed using the laminated thin film according to any one of claims 1 to 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1242070A JP2714176B2 (en) | 1989-09-20 | 1989-09-20 | Laminated thin film of oxide superconductor and oxide magnetic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1242070A JP2714176B2 (en) | 1989-09-20 | 1989-09-20 | Laminated thin film of oxide superconductor and oxide magnetic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03105807A true JPH03105807A (en) | 1991-05-02 |
| JP2714176B2 JP2714176B2 (en) | 1998-02-16 |
Family
ID=17083837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1242070A Expired - Lifetime JP2714176B2 (en) | 1989-09-20 | 1989-09-20 | Laminated thin film of oxide superconductor and oxide magnetic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2714176B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03228803A (en) * | 1990-01-31 | 1991-10-09 | Sumitomo Cement Co Ltd | Oxide superconducting multiple body |
| JPH042182A (en) * | 1990-04-19 | 1992-01-07 | Matsushita Electric Ind Co Ltd | Thin film superconductor and manufacture thereof |
| EP0482198A1 (en) * | 1990-05-11 | 1992-04-29 | Hitachi, Ltd. | Superconducting element using oxide superconductor |
| JPH0563249A (en) * | 1991-08-30 | 1993-03-12 | Hitachi Ltd | Spin interaction element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63318014A (en) * | 1987-06-19 | 1988-12-26 | Hitachi Ltd | Superconductive film of metal oxide |
| JPS6452312A (en) * | 1987-08-21 | 1989-02-28 | Matsushita Electric Ind Co Ltd | Superconductor |
| JPS6472416A (en) * | 1987-09-14 | 1989-03-17 | Matsushita Electric Ind Co Ltd | Super-structure superconductive material |
-
1989
- 1989-09-20 JP JP1242070A patent/JP2714176B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63318014A (en) * | 1987-06-19 | 1988-12-26 | Hitachi Ltd | Superconductive film of metal oxide |
| JPS6452312A (en) * | 1987-08-21 | 1989-02-28 | Matsushita Electric Ind Co Ltd | Superconductor |
| JPS6472416A (en) * | 1987-09-14 | 1989-03-17 | Matsushita Electric Ind Co Ltd | Super-structure superconductive material |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03228803A (en) * | 1990-01-31 | 1991-10-09 | Sumitomo Cement Co Ltd | Oxide superconducting multiple body |
| JPH042182A (en) * | 1990-04-19 | 1992-01-07 | Matsushita Electric Ind Co Ltd | Thin film superconductor and manufacture thereof |
| EP0482198A1 (en) * | 1990-05-11 | 1992-04-29 | Hitachi, Ltd. | Superconducting element using oxide superconductor |
| JPH0563249A (en) * | 1991-08-30 | 1993-03-12 | Hitachi Ltd | Spin interaction element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2714176B2 (en) | 1998-02-16 |
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