JPS63310515A - Manufacture of superconductor membrane - Google Patents
Manufacture of superconductor membraneInfo
- Publication number
- JPS63310515A JPS63310515A JP62146355A JP14635587A JPS63310515A JP S63310515 A JPS63310515 A JP S63310515A JP 62146355 A JP62146355 A JP 62146355A JP 14635587 A JP14635587 A JP 14635587A JP S63310515 A JPS63310515 A JP S63310515A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconductor
- membrane
- heat
- solid substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000012528 membrane Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001704 evaporation Methods 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000008020 evaporation Effects 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 125000005594 diketone group Chemical group 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 claims abstract 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract 2
- 229910052691 Erbium Inorganic materials 0.000 claims abstract 2
- 229910052689 Holmium Inorganic materials 0.000 claims abstract 2
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract 2
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract 2
- 229910052772 Samarium Inorganic materials 0.000 claims abstract 2
- 229910052771 Terbium Inorganic materials 0.000 claims abstract 2
- 229910052775 Thulium Inorganic materials 0.000 claims abstract 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- 229910052790 beryllium Inorganic materials 0.000 claims abstract 2
- 229910052796 boron Inorganic materials 0.000 claims abstract 2
- 229910052791 calcium Inorganic materials 0.000 claims abstract 2
- 229910052733 gallium Inorganic materials 0.000 claims abstract 2
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract 2
- 229910052745 lead Inorganic materials 0.000 claims abstract 2
- 229910052749 magnesium Inorganic materials 0.000 claims abstract 2
- 229910052712 strontium Inorganic materials 0.000 claims abstract 2
- 229910052718 tin Inorganic materials 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 33
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical group CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- BVPKYBMUQDZTJH-UHFFFAOYSA-N 1,1,1-trifluoro-5,5-dimethylhexane-2,4-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(F)(F)F BVPKYBMUQDZTJH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract 2
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、超伝導体薄膜の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a superconductor thin film.
（従来の技術）
近年、銅酸化物系の材料を中心にこれらが高温超伝導体
になることが見いだされたが、銅酸化物系を中心とした
、これらの超伝導体薄膜の製造法は未だ完成された技術
は知られていない。(Prior art) In recent years, it has been discovered that copper oxide-based materials can become high-temperature superconductors. No perfect technology is known yet.
これまで比較的高い超伝導転移点Ｔｃを有していたＢａ
ＰｂＢ１Ｏｓに対応する超伝導体をターゲットにして高
周波スパッタにより真空中に置かれた固体基板上に沈着
する方法が知られている。しかしながら、これらの製造
方法は例えばＮｂ＊Ｇｅは、酸素により超伝導を示さな
いＮｂ酸化物の生成を防ぐために非常に高価な高真空チ
ャンバー装置を必要とする。またＢａＰｂＢ１Ｏｓは、
高真空容器と共に酸素濃度や蒸着物組成の制御に高度な
技術を要するなどの欠点を有していた。Ba has until now had a relatively high superconducting transition point Tc.
A method is known in which a superconductor corresponding to PbB1Os is deposited on a solid substrate placed in a vacuum by high-frequency sputtering. However, these manufacturing methods, for example Nb*Ge, require very expensive high vacuum chamber equipment to prevent the formation of Nb oxide, which does not exhibit superconductivity, due to oxygen. Also, BaPbB1Os is
Along with high-vacuum containers, these had drawbacks such as requiring advanced technology to control oxygen concentration and deposit composition.
金属酸化物の薄膜製造においては、一般にスパッタ法が
主に用いられてきた。しかし、スパッタ法での金属酸化
膜作成には以下のような欠点がある。In general, sputtering has been mainly used in the production of thin films of metal oxides. However, forming a metal oxide film by sputtering has the following drawbacks.
■金属酸化物等を焼結したターゲットをあらかじめ作製
する必要があり、ターゲットのわずかな作製条件の違い
で得られる薄膜の組成、物性が異なり再現性が悪い。■
ターゲットの組成と作製した薄膜の組成は一般に異なり
、所望の組成の薄膜を得るには、多くのターゲットの作
製と薄膜形成の試行錯誤が必要である。■スパッタ法で
の薄膜形成では一般に膜形成の初期に、用いた基板の表
面性状の影響を受けるため、初期に堆積した部分とその
後に堆積した部分とでは一般に膜の組成が異なり、膜厚
方向で均質な組成の膜が得にくい。■上記■と同様な理
由で、組成、物性の異なる金属酸化膜の積層や中間に絶
縁層をふくむ積層膜においても、均質な膜組成を持つも
のは作製が困難である。■スパッタ法は、比較的厚い薄
膜を得るには適しているが、厚み数１００Ａ〜数１００
０Ａ程度の均質な超薄膜を得るには９作製が難しい。■It is necessary to prepare a target made of sintered metal oxide, etc. in advance, and the composition and physical properties of the thin film obtained will vary due to slight differences in target preparation conditions, resulting in poor reproducibility. ■
The composition of the target and the composition of the produced thin film are generally different, and in order to obtain a thin film with a desired composition, it is necessary to produce many targets and undergo trial and error in thin film formation. ■Thin film formation using the sputtering method is generally affected by the surface properties of the substrate used at the initial stage of film formation, so the composition of the film is generally different between the initially deposited part and the later deposited part, and the thickness direction It is difficult to obtain a film with a homogeneous composition. (2) For the same reason as (2) above, it is difficult to produce a layered film having a homogeneous film composition, even in a stacked film of metal oxide films having different compositions and physical properties, or a stacked film including an insulating layer in the middle. ■The sputtering method is suitable for obtaining relatively thick thin films, but the thickness is several 100A to several 100A.
It is difficult to produce a homogeneous ultra-thin film of about 0A.
従って、対応する金属酸化物あるいは金属炭酸塩を乳鉢
で粉砕、焼結する方法でターゲットを作製し、真空中基
板上にスパッタする方法を採用した場合においても、上
記の欠点は解決できない、このため、スパッタ法でバル
ク体と同様な超伝導物性を得た例はなく、上記のごとき
スパッタ法の持つ欠点から、バルク体と同様な超伝導物
性を有する薄膜は、膜厚が涌い場合や、異種材料を積層
する場合は、特に困難であった。Therefore, even if a target is prepared by crushing and sintering the corresponding metal oxide or metal carbonate in a mortar and then sputtered onto a substrate in vacuum, the above disadvantages cannot be solved. However, there is no example of obtaining superconducting properties similar to those of a bulk material by sputtering, and due to the above-mentioned drawbacks of the sputtering method, thin films with superconducting properties similar to those of bulk materials are difficult to obtain if the film thickness is large or if the material is of a different material. This was particularly difficult when laminating materials.
（発明の解決しようとする問題点）
本発明はこのような点を改良するために、均質な組成を
有する混合焼結された酸化銅系超伝導体薄膜の作製方法
であり、高価な高真空装置や高度な技術を必要としない
方法を与えるものである。(Problems to be Solved by the Invention) In order to improve these points, the present invention provides a method for producing a mixed sintered copper oxide-based superconductor thin film having a homogeneous composition. It provides a method that does not require equipment or advanced technology.
（問題点を解決するための手段）
本発明は、所望の金属酸化物組成を持つ超伝導体薄膜を
得るために、所望の金属イオンに対応するジケトン誘導
体の錯体を蒸発源として加熱薫発させ、酸素を含む減圧
下において、加熱および／または紫外線を照射された固
体基板上に薄膜として分解堆積する工程と、該固体基板
上の薄膜を酸素雰囲気下あるいは無酸素雰囲気下で加熱
処理する工程からなることを特徴とする製造方法である
。このとき、分解効率をあげるため、または反応を十分
に進行させることを目的にジケトンとして代表的なアセ
チルアセトン（ＡＡと略する）を選択できる。より好適
な結果を得るには、第三級ブチル基あるいはまたフルオ
ロアルキル基を含むジケトン誘導体として、ジピバロイ
ルメタン（ＤＰＭと略）、ヘプタフルオロプタノイルピ
バロイルメタン（ＦＯＤと略）、ピバロイルトリフルオ
ロアセトン（ＰＴＡと略）を用いることが望ましい。(Means for Solving the Problems) In order to obtain a superconductor thin film having a desired metal oxide composition, the present invention heats and smokes a complex of a diketone derivative corresponding to a desired metal ion as an evaporation source. , a step of decomposing and depositing a thin film on a solid substrate that has been heated and/or irradiated with ultraviolet rays under reduced pressure containing oxygen, and a step of heat-treating the thin film on the solid substrate in an oxygen atmosphere or an oxygen-free atmosphere. This is a manufacturing method characterized by the following. At this time, acetylacetone (abbreviated as AA), which is a typical diketone, can be selected in order to increase the decomposition efficiency or to allow the reaction to proceed sufficiently. To obtain more favorable results, dipivaloylmethane (abbreviated as DPM), heptafluoroptanoylpivaloylmethane (abbreviated as FOD), It is preferable to use pivaloyltrifluoroacetone (abbreviated as PTA).
（実施例１）
Ｙ （ＦＯＤ）ｓ、Ｂａ （ＤＰＭ）！、Ｃｕ （Ｐ’
ＴＡ）ｚを蒸発源とし、それぞれを蒸着ボートにいれて
１００〜２５０℃に加熱した。ＹＳＺ（イツトリアサス
ティントジルコニア：イツトリウム酸化物を３０％含有
するジルコニア単結晶）基板の００１面上に、５ｘｌＯ
−”ｍｍＨｇの酸素雰囲気で、基板にエキシマレーザ−
を照射しながら薄膜を堆積させた。この基板を４００〜
６００°Ｃで１０時間熱処理した。徐冷した薄膜試料（
膜厚２〜５μｍ）を４端子交流法により導電率の温度変
化を求めた。絶対温度９０にで完全に超伝導に至り、転
移幅は２．８にであった。(Example 1) Y (FOD)s, Ba (DPM)! ,Cu(P'
Using TA)z as an evaporation source, each was placed in a deposition boat and heated to 100 to 250°C. 5xlO on the 001 plane of a YSZ (yttrium assisted zirconia: zirconia single crystal containing 30% yttrium oxide) substrate.
-Excimer laser is applied to the substrate in an oxygen atmosphere of "mmHg."
The thin film was deposited while being irradiated with . This board is 400~
Heat treatment was performed at 600°C for 10 hours. Slowly cooled thin film sample (
Temperature changes in electrical conductivity were determined using a four-terminal alternating current method. It reached complete superconductivity at an absolute temperature of 90, and the transition width was 2.8.
（実施例２）
Ｙ （ＦＯＤ）ｓ、Ｂａ （ＤＰＭ）ｔ、Ｃｕ （ＰＴ
Ａ）ｚを蒸発源とし、それぞれを蒸着ボートにいれて１
００〜２５０″Ｃに加熱した。ＹＳＺ基板（００１面）
上に、１ｘｌｏ−” ｍｍＨｇの酸素雰囲気で、１００
°Ｃに加熱しながら１００Ｗ低圧水銀灯を照射した基板
に薄膜を堆積させた。この基板を４００〜６００℃で１
０時間熱処理した。徐冷した薄膜試料（膜厚１〜２μｍ
）を４端子交流法により導電率の温度変化を求めた。絶
対温度８６にで完全に超伝導に至り、転移幅は４．８に
であった。(Example 2) Y (FOD)s, Ba (DPM)t, Cu (PT
A) Use z as the evaporation source, put each in the evaporation boat and 1
Heated to 00~250″C. YSZ substrate (001 side)
above, in an oxygen atmosphere of 1×lo-” mmHg,
The thin film was deposited on a substrate that was irradiated with a 100 W low-pressure mercury lamp while heating to °C. This substrate was heated at 400 to 600℃ for 1
Heat treatment was performed for 0 hours. Slowly cooled thin film sample (film thickness 1-2 μm)
) was determined by the four-terminal alternating current method to determine the temperature change in conductivity. It reached complete superconductivity at an absolute temperature of 86, and the transition width was 4.8.
（実施例３）
Ｅｕ （ＦＯＤ）ｓ、Ｂａ （ＤＰＭ）ｚ、Ｃｕ（ＡＡ
）ｚを蒸発源とし、それぞれを蒸着ボートにいれて１０
０〜２５０℃に加熱した。ＹＳＺ基板（００１面）上に
、１ｘｌＯ−冨ｍｍＨｇの酸素雰囲気で、１００℃に加
熱しながら１００Ｗ低圧水銀灯を照射した基板に薄膜を
堆積させた。この基板を４００〜６００°Ｃで１０時間
熱処理した。徐冷した薄膜試料（膜厚１〜２μｍ）を４
端子交流法により導電率の温度変化を求めた。絶対温度
８５にで完全に超伝導に至り、転移幅は４．８にであっ
た。(Example 3) Eu (FOD)s, Ba (DPM)z, Cu(AA
) with z as the evaporation source, and put each in a evaporation boat for 10
Heated to 0-250°C. A thin film was deposited on a YSZ substrate (001 plane) on which a 100 W low-pressure mercury lamp was irradiated while heating the substrate to 100° C. in an oxygen atmosphere of 1×lO-rich mmHg. This substrate was heat treated at 400-600°C for 10 hours. A slowly cooled thin film sample (film thickness 1 to 2 μm) was
Temperature changes in conductivity were determined using the terminal AC method. It reached complete superconductivity at an absolute temperature of 85, and the transition width was 4.8.
（実施例４）
Ｇｄ （ＡＡ）！、Ｂａ （ＤＰＭ）ｔ、Ｃｕ （Ａ
Ａ ） ｚを蒸発源とし、それぞれを蒸着ボートにいれ
て１００〜２５０°Ｃに加熱した。５ｒＴｉ０ｓ基板上
に、１ｘｌＯ−” ｍｍＨｇの酸素雰囲気で、１００
°Ｃに加熱しながら１００Ｗ低圧水銀灯を照射した基板
に薄膜を堆積させた、この基板を４００〜６００℃で１
０時間熱処理した。徐冷した薄膜試料（膜厚１〜２μｍ
）を４端子交流法により導電率の温度変化を求めた。絶
対温度８２にで完全に超伝導に至り、転移幅は５．２に
であった。(Example 4) Gd (AA)! , Ba (DPM)t, Cu (A
A) Z was used as an evaporation source, and each was placed in a deposition boat and heated to 100 to 250°C. On a 5rTi0s substrate, 100
A thin film was deposited on a substrate that was irradiated with a 100 W low-pressure mercury lamp while being heated to 400-600°C.
Heat treatment was performed for 0 hours. Slowly cooled thin film sample (film thickness 1-2 μm)
) was determined by the four-terminal alternating current method to determine the temperature change in conductivity. It reached complete superconductivity at an absolute temperature of 82, and the transition width was 5.2.
以下同様にして、所定の組成に仕込んだＹ。In the same manner, Y was prepared to a predetermined composition.
Ｓｃおよびランタニド系元素あるいはＡＩ、Ｉｎ、Ｇａ
、ＴＩの■属元素、Ｂａを初めとするアルカリ土類系元
素、そして銅のジケトン錯体を原料にして、超伝導薄膜
を得た。結果を表１にまとめる。Sc and lanthanide elements or AI, In, Ga
A superconducting thin film was obtained using a diketone complex of copper, a group II element of TI, an alkaline earth element such as Ba, and a copper diketone complex as raw materials. The results are summarized in Table 1.
（以下余白）
表１．蒸着原料と得られる膜の転移温度Ｔｃ（発明の効
果）
以上説明したように、本発明によれば、超伝導体薄膜を
比較的低温で形成でき、かつ高価な高真空容器や高度な
技術を必要としないで超伝導体薄膜の製造が可能になる
と言う点で掻めて大きな利点を有する。(Left below) Table 1. Transition temperature Tc of vapor deposition raw material and resulting film (effects of the invention) As explained above, according to the present invention, a superconductor thin film can be formed at a relatively low temperature, and it does not require an expensive high-vacuum container or advanced technology. It has a significant advantage in that it enables the production of superconductor thin films without the need for this method.
本発明の方法により得られる超伝導体薄膜は転移幅のシ
ャープな特性の良い超伝導体薄膜であり、従来の金属系
の薄膜と比較して高い超伝導転移温度を有する。絶対温
度７７にの液体窒素温度以上で超伝導に至る薄膜は、ジ
ョセフソン素子、電力輸送、高磁場発生磁石等の幅広い
工業的応用が期待される。The superconductor thin film obtained by the method of the present invention has good characteristics with a sharp transition width, and has a higher superconducting transition temperature than conventional metal-based thin films. Thin films that reach superconductivity above the liquid nitrogen temperature of 77 degrees absolute are expected to have a wide range of industrial applications, such as Josephson devices, power transport, and magnets that generate high magnetic fields.
Claims (3)
（ここでＭ１は（Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｔｉ、Ｓｃ、
Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ、Ｅｕ、Ｇｄ
、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ）からな
る群から選ばれた一または二以上の元素、Ｍ２は（Ｂｅ
、Ｍｇ、Ｃａ、Ｓｒ、Ｂａ、Ｒａ、Ｓｎ、Ｐｂ）からな
る群からえらばれた一または二以上の元素、Ｍ３は（Ｃ
ｕ）、ｘ、ｙ、ｚ、ｗは任意の原子モル分率）で表され
る超伝導体薄膜の製造方法において、Ｍ１、Ｍ２、Ｍ３
のジケトン誘導体の錯体を蒸発源として加熱蒸発させ、
酸素を含む減圧下において、加熱および／または紫外線
を照射された固体基板上に薄膜として分解堆積する工程
と、該固体基板上の薄膜を加熱処理する工程からなるこ
とを特徴とする超伝導体薄膜の製造方法。(1) General compositional formula (M1)x(M2)y(M3)zOw
(Here, M1 is (B, Al, Ga, In, Ti, Sc,
Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd
, Tb, Dy, Ho, Er, Tm, Yb, Lu), M2 is (Be
, Mg, Ca, Sr, Ba, Ra, Sn, Pb), M3 is (C
u), x, y, z, w are arbitrary atomic mole fractions), M1, M2, M3
A complex of diketone derivatives is heated and evaporated as an evaporation source,
A superconductor thin film characterized by comprising a step of decomposing and depositing a thin film on a solid substrate that has been heated and/or irradiated with ultraviolet rays under reduced pressure containing oxygen, and a step of heat-treating the thin film on the solid substrate. manufacturing method.
オロプタノイルピバロイルメタン、ピバロイルトリフル
オロアセトンの中から選ばれることを特徴とする特許請
求の範囲第１項記載の超伝導体薄膜の製造方法。(2) The method for producing a superconductor thin film according to claim 1, wherein the diketone derivative is selected from acetylacetone, heptafluoroptanoylpivaloylmethane, and pivaloyltrifluoroacetone.
プタノイルピバロイルメタン、ピバロイルトリフルオロ
アセトンのいずれかであることを特徴とする特許請求の
範囲第１項または第２項記載の超伝導体薄膜の製造方法
。(3) The superconductor thin film according to claim 1 or 2, wherein the diketone derivative for M2 is either heptafluoroptanoylpivaloylmethane or pivaloyltrifluoroacetone. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62146355A JPS63310515A (en) | 1987-06-12 | 1987-06-12 | Manufacture of superconductor membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62146355A JPS63310515A (en) | 1987-06-12 | 1987-06-12 | Manufacture of superconductor membrane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63310515A true JPS63310515A (en) | 1988-12-19 |
Family
ID=15405841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62146355A Pending JPS63310515A (en) | 1987-06-12 | 1987-06-12 | Manufacture of superconductor membrane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63310515A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01200519A (en) * | 1988-02-04 | 1989-08-11 | Fujikura Ltd | Manufacture of oxide superconducting wire material |
| JPH01208323A (en) * | 1988-02-17 | 1989-08-22 | Riken Corp | Production of thin film |
| JPH01308806A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308802A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor and device therefor |
| JPH01308805A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308804A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308807A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH0254769A (en) * | 1988-08-18 | 1990-02-23 | Mitsubishi Metal Corp | Manufacture of thin superconductor film |
-
1987
- 1987-06-12 JP JP62146355A patent/JPS63310515A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01200519A (en) * | 1988-02-04 | 1989-08-11 | Fujikura Ltd | Manufacture of oxide superconducting wire material |
| JPH01208323A (en) * | 1988-02-17 | 1989-08-22 | Riken Corp | Production of thin film |
| JPH01308806A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308802A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor and device therefor |
| JPH01308805A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308804A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308807A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH0254769A (en) * | 1988-08-18 | 1990-02-23 | Mitsubishi Metal Corp | Manufacture of thin superconductor film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4925829A (en) | Method for preparing thin film of compound oxide superconductor by ion beam techniques | |
| JPS63310515A (en) | Manufacture of superconductor membrane | |
| JPS63224116A (en) | Manufacture of thin film superconductor | |
| US5361720A (en) | Epitaxial deposition | |
| JPH02145761A (en) | Manufacture of thin superconductor film | |
| EP0372808B1 (en) | Process for preparing a perovskite type superconductor film | |
| JPH0286014A (en) | Composite oxide superconducting thin film and film forming method | |
| JPH0825742B2 (en) | How to make superconducting material | |
| JP2713343B2 (en) | Superconducting circuit fabrication method | |
| JPH02175613A (en) | Production of oxide superconducting thin film | |
| JP2502344B2 (en) | Method for producing complex oxide superconductor thin film | |
| JP2594271B2 (en) | Superconductor thin film manufacturing apparatus and superconductor thin film manufacturing method | |
| EP0333513B1 (en) | Oxide superconductor | |
| JPH01125878A (en) | Thin film multilayer superconductor | |
| JP2611332B2 (en) | Manufacturing method of thin film superconductor | |
| JP3025891B2 (en) | Thin film superconductor and method of manufacturing the same | |
| JP2525852B2 (en) | Preparation method of superconducting thin film | |
| GB2217943A (en) | Manufacture of semiconductor or superconductor devices | |
| JPH02141568A (en) | Production of thin superconducting film of multiple oxide | |
| JPH07100609B2 (en) | Method of manufacturing thin film superconductor | |
| JP2778119B2 (en) | Composite oxide superconducting thin film and method for forming the same | |
| JP2501616B2 (en) | Preparation method of superconducting thin film | |
| JPS63307112A (en) | Superconductor | |
| JPH0465306A (en) | Oxide superconductor thin film | |
| JPS63310519A (en) | Manufacture of membrane consisting of oxide superconductor material |