JPH01125878A - Thin film multilayer superconductor - Google Patents

Thin film multilayer superconductor

Info

Publication number
JPH01125878A
JPH01125878A JP62283548A JP28354887A JPH01125878A JP H01125878 A JPH01125878 A JP H01125878A JP 62283548 A JP62283548 A JP 62283548A JP 28354887 A JP28354887 A JP 28354887A JP H01125878 A JPH01125878 A JP H01125878A
Authority
JP
Japan
Prior art keywords
film
superconductor
thin film
films
stabilization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62283548A
Other languages
Japanese (ja)
Inventor
Soji Tsuchiya
土屋 宗次
Takeshi Takeda
竹田 武司
Satoshi Sekido
聰 関戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62283548A priority Critical patent/JPH01125878A/en
Publication of JPH01125878A publication Critical patent/JPH01125878A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

PURPOSE:To improve a superconductor film of this design in a superconductivity transition temperature(Tc), decrease the transition temperature in range, and enable the stabilization of the superconductor film in property by a method wherein specified superconductor films and Cu oxide films are alternately laminated to be a multilayer. CONSTITUTION:A superconductor MBa2Cu3O7-y film and a Cu oxide film are alternately laminated to be a multilayer, where M denotes at least one of metals selected from Y, Lu, Yb, Tm, Er, Ho, Dy, Gd, Sc, and Eu and y is so set as to satisfy an equation 0<=1<=1. By these processes, the improvement of a critical temperature, the decrease of a transition temperature in range, and the stabilization of the film can be achieved. And, the stabilization of the film is that the properties of the superconductor film such as Tc and the like can be very reproducibly obtained even after the film is subjected to the temperature change and left to stand for a long period. And, it is desirable that oxide films of MBa2Cu3O7-y and copper are formed through a sputtering method or an electron beam evaporation method.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はジョセフンン素子や配線、電極、モーター、セ
ンサーの分野に応用できる薄膜多層超電導体に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film multilayer superconductor that can be applied to the fields of Josephine elements, wiring, electrodes, motors, and sensors.

従来の技術 最近、酸化物の高温超電導体が注目を浴びているが、こ
れらの内でとくに関心を集め研究されているのが90〜
100に程度に超電導転移温度(Tc ) をもつY−
Ba−Cu−Q系である。化合物の組成はYBa 2C
u 3O7−yで表わされる事が明らかになっており、
YをLu、 Yb、 Tm、 Er、Ho、 Dy、 
Gd、 S c、 FJu  などの稀土類元素にかえ
ても殆んど同等のTcを示す事も確認されている。結晶
構造はCu068面体を含むペロブスカイト類似構造を
もち、酸素欠損が超電導に重要な役割りを果たす事が知
られているが、酸素欠損の位置、欠損量(y)に関して
はまだ不明の点が多い13発明が解決しようとする問題
点 しかしながらこれまでの研究の多くは二味結木(セラミ
ックス)で行なわれている。ジョセフンン素子などの電
子デバイスを作成するには超電導材料の薄膜化が今後重
要性を帯びてくると思われ、すでにスパッタ法や蒸着法
による薄膜化もすでに報告されているが、薄膜の特性は
焼結体と比較してもTcや安定性の点で劣っている。
Conventional technology Recently, high-temperature superconductors made of oxides have been attracting attention, but among these, the ones that have attracted particular attention and are being studied are
Y- with a superconducting transition temperature (Tc) on the order of 100
It is Ba-Cu-Q type. The composition of the compound is YBa 2C
It has been revealed that it is expressed as u3O7-y,
Y as Lu, Yb, Tm, Er, Ho, Dy,
It has also been confirmed that even when rare earth elements such as Gd, Sc, and FJu are used, almost the same Tc is exhibited. The crystal structure has a perovskite-like structure containing Cu06 octahedrons, and it is known that oxygen vacancies play an important role in superconductivity, but there are still many unknowns regarding the location and amount of oxygen vacancies (y). 13 Problems to be Solved by the Invention However, most of the research to date has been conducted on Futami Yuki (ceramics). Thin films of superconducting materials are expected to become important in the future for creating electronic devices such as Josephine elements, and thin films using sputtering and vapor deposition have already been reported, but the properties of thin films depend on baking. Even compared to solid bodies, they are inferior in terms of Tc and stability.

本発明の目的は薄膜超電導体におけるTcの向上と転移
温度巾の縮少、膜の安定化を提供することにある。
An object of the present invention is to provide a thin film superconductor with improved Tc, reduced transition temperature range, and film stabilization.

問題点を解決するだめの手段 本発明は上記目的を達成するもので、超電導体MBa2
Cu3O7 、 (但し、MはY、 Lu、 Yh、T
m、 Er、 Ho、 Dy、 Gd%Sc、 Eu 
 のうちの少くとも1種、0≦y≦1)の膜とCuの酸
化物の膜を交互に積層して多層化することを特徴とする
、 作用 前述のような本発明の多層構造にすることにより、臨界
温度Tcの向上、転移温度巾の縮少、膜の安定化がはか
れる。ここでの膜の安定化とは、Tcの特性などが、温
度の昇降温や長時間放置を行っても再現性が良好に得ら
れることである。
Means for Solving the Problems The present invention achieves the above objects, and is based on the superconductor MBa2.
Cu3O7, (However, M is Y, Lu, Yh, T
m, Er, Ho, Dy, Gd%Sc, Eu
The multilayer structure of the present invention as described above is characterized in that at least one film of 0≦y≦1) and a Cu oxide film are alternately laminated to form a multilayer structure. This improves the critical temperature Tc, reduces the transition temperature range, and stabilizes the film. The stabilization of the film here means that good reproducibility of the Tc characteristics can be obtained even if the temperature is raised or lowered or the film is left standing for a long time.

MBa2Cu3O7−、とCuの酸化物膜は、スパッタ
法又はエレクトロンビーム蒸着法で形成される1′−°
ことが好ましぐ、膜厚は10〜100OXが望ましい。
The oxide films of MBa2Cu3O7- and Cu are 1'-° formed by sputtering or electron beam evaporation.
The film thickness is preferably 10 to 100 OX.

また、−船釣に特性のすぐれた薄膜を得ようとすると、
一基板としては、単結晶が用いられ、ある面でのエピタ
キシャル成長を行わせる。すでに発表されているMB 
a 2Cu 3O7−δのスパッタ膜の基板としては、
5rTi03やMgOの単結晶が用いられている。本発
明の方法による薄膜超電導体は基板としては、非晶質性
のものでもよい。多層製膜後空気中あるいは空気よりよ
り02濃度の高いガス雰囲気中で、600〜950°C
で1時間以上熱処理を行うことにより、膜の電気特性は
より向上し安定化される。
Also, when trying to obtain a thin film with excellent properties for boat fishing,
A single crystal is used as one substrate, and epitaxial growth is performed on a certain surface. MB already announced
As a substrate for the sputtered film of a 2Cu 3O7-δ,
Single crystals of 5rTi03 and MgO are used. In the thin film superconductor produced by the method of the present invention, the substrate may be amorphous. After forming a multilayer film, heat at 600 to 950°C in air or in a gas atmosphere with a higher concentration of 02 than air.
By performing heat treatment for one hour or more, the electrical properties of the film are further improved and stabilized.

実症例 以下に本発明の実施例を詳細に説明する。Actual case Examples of the present invention will be described in detail below.

まず、ベレット成形で90〜100’K にTcをもつ
YBa2C!u3O7 、の焼結粉末を作製した。この
粉末と酸化銅の粉末をターゲットとして用いて、1”L
Pマグネットロン式のスパッタ法により製膜な行った。
First, YBa2C has a Tc of 90 to 100'K by pellet molding! A sintered powder of u3O7 was prepared. Using this powder and copper oxide powder as targets, 1”L
The film was formed by a P magnetron sputtering method.

基板としては、アルミナ基板を用いて、400°C程度
に加熱を行った。Y B a 20 u 3O7−yと
酸化鋼の膜厚はそれぞれ、2oo&と50λ程度であり
、総膜厚は2μmはどのものを得た。製膜後大気中で8
70°Cで5Hの処理を行った。この膜の電気特性を調
べたところ、Tcは950にで、転移中は焼結体と同程
度の幅であった。それぞれの成文の膜厚を変えてもTc
はあまり変化せずに、臨界電流Jcは変化したが、Jc
はlO3〜10  A/m の範囲にあった。製膜後熱
処理を行った膜は電気的特性も安定しており、大気中に
長時間放置しておいても特性の変化はみられなく、再現
性は良好であった。Yのかわりに、MとしてLu、 Y
b、Tm、 E r、 Ho、 Dy、 Gd%Sc、
 Euを用いた場合も同様な特性が得られた。製膜後の
熱処理雰囲気は空気より02 濃度の高いガス雰囲気で
も同様の結果が得られた。
An alumina substrate was used as the substrate and heated to about 400°C. The film thicknesses of Y B a 20 u 3 O7-y and oxidized steel were about 2oo & 50λ, respectively, and the total film thickness was 2 μm. 8 in the atmosphere after film formation
A 5H treatment was performed at 70°C. When the electrical properties of this film were examined, the Tc was found to be 950, and the width during transition was comparable to that of the sintered body. Even if the film thickness of each composition is changed, Tc
did not change much, and the critical current Jc changed, but Jc
was in the range of lO3 to 10 A/m. The electrical properties of the film that was heat-treated after film formation were stable, and even if it was left in the atmosphere for a long time, no change in properties was observed, and the reproducibility was good. Lu as M instead of Y, Y
b, Tm, E r, Ho, Dy, Gd%Sc,
Similar characteristics were obtained when Eu was used. Similar results were obtained even when the heat treatment atmosphere after film formation was a gas atmosphere with a higher 02 concentration than air.

発明の効果 以上、本発明はMBa2Cu3O7 、の膜とCuの酸
化物の膜を交互に多層に設けた薄膜多層超電導体を提供
するもので、Tcと転移温度巾は焼結体と同等で、Jc
が高く、安定性の高い薄膜超電導体が提供でき、ジlセ
フンン素子をはじめとする超電導素子の特性の向上を可
能ならしめる。
As described above, the present invention provides a thin film multilayer superconductor in which MBa2Cu3O7 films and Cu oxide films are alternately provided in multilayers, and the Tc and transition temperature range are the same as those of a sintered body, and the Jc
A highly stable thin film superconductor can be provided, and the characteristics of superconducting devices such as dielectric devices can be improved.

Claims (4)

【特許請求の範囲】[Claims] (1)超電導体MBa_2Cu_3O_7_−_y(但
し、MはY、Lu、Yb、Tm、Er、Ho、Dy、G
d、Sc、Euのうち少くとも1種、0≦y≦1)の膜
とCuの酸化物の膜を交互に多層に設けたことを特徴と
する薄膜多層超電導体。
(1) Superconductor MBa_2Cu_3O_7_-_y (where M is Y, Lu, Yb, Tm, Er, Ho, Dy, G
A thin film multilayer superconductor characterized in that films of at least one of d, Sc, and Eu (0≦y≦1) and films of Cu oxide are alternately provided in multiple layers.
(2)MBa_2Cu_3O_7_−_δの膜とCuの
酸化物の膜がスパッタ法又はエレクトロンビーム蒸着法
で形成されたことを特徴とする特許請求の範囲第1項記
載の薄膜多層超電導体。
(2) The thin film multilayer superconductor according to claim 1, wherein the MBa_2Cu_3O_7_-_δ film and the Cu oxide film are formed by a sputtering method or an electron beam evaporation method.
(3)MBa_2Cu_3O_7_−_δの膜とCuの
酸化物の膜が膜形成後熱処理されたものであることを特
徴とする特許請求の範囲第1項記載の薄膜多層超電導体
(3) The thin film multilayer superconductor according to claim 1, wherein the MBa_2Cu_3O_7_-_δ film and the Cu oxide film are heat-treated after film formation.
(4)熱処理が、大気又は酸素富化空気雰囲気中で行わ
れたことを特徴とする特許請求の範囲第3項記載の薄膜
多層超電導体。
(4) The thin film multilayer superconductor according to claim 3, wherein the heat treatment is performed in the air or an oxygen-enriched air atmosphere.
JP62283548A 1987-11-10 1987-11-10 Thin film multilayer superconductor Pending JPH01125878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62283548A JPH01125878A (en) 1987-11-10 1987-11-10 Thin film multilayer superconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62283548A JPH01125878A (en) 1987-11-10 1987-11-10 Thin film multilayer superconductor

Publications (1)

Publication Number Publication Date
JPH01125878A true JPH01125878A (en) 1989-05-18

Family

ID=17666950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62283548A Pending JPH01125878A (en) 1987-11-10 1987-11-10 Thin film multilayer superconductor

Country Status (1)

Country Link
JP (1) JPH01125878A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164725A (en) * 1987-12-19 1989-06-28 Toshiba Corp Oxide superconducting thin film for electronic device
WO1992005114A1 (en) * 1990-09-21 1992-04-02 Toray Industries, Inc. Oxide superconductor
US6465078B1 (en) 1997-01-23 2002-10-15 Daicel Chemical Industries, Ltd. Recording sheet with an ink absorbing layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01164725A (en) * 1987-12-19 1989-06-28 Toshiba Corp Oxide superconducting thin film for electronic device
WO1992005114A1 (en) * 1990-09-21 1992-04-02 Toray Industries, Inc. Oxide superconductor
US6465078B1 (en) 1997-01-23 2002-10-15 Daicel Chemical Industries, Ltd. Recording sheet with an ink absorbing layer

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