JPH01125878A - Thin film multilayer superconductor - Google Patents
Thin film multilayer superconductorInfo
- Publication number
- JPH01125878A JPH01125878A JP62283548A JP28354887A JPH01125878A JP H01125878 A JPH01125878 A JP H01125878A JP 62283548 A JP62283548 A JP 62283548A JP 28354887 A JP28354887 A JP 28354887A JP H01125878 A JPH01125878 A JP H01125878A
- Authority
- JP
- Japan
- Prior art keywords
- film
- superconductor
- thin film
- films
- stabilization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 4
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 3
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 3
- 229910052693 Europium Inorganic materials 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 abstract description 8
- 239000010949 copper Substances 0.000 abstract description 6
- 230000006641 stabilisation Effects 0.000 abstract description 5
- 238000011105 stabilization Methods 0.000 abstract description 5
- 229910052692 Dysprosium Inorganic materials 0.000 abstract description 4
- 229910052688 Gadolinium Inorganic materials 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- -1 E r Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はジョセフンン素子や配線、電極、モーター、セ
ンサーの分野に応用できる薄膜多層超電導体に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film multilayer superconductor that can be applied to the fields of Josephine elements, wiring, electrodes, motors, and sensors.
従来の技術
最近、酸化物の高温超電導体が注目を浴びているが、こ
れらの内でとくに関心を集め研究されているのが90〜
100に程度に超電導転移温度(Tc ) をもつY−
Ba−Cu−Q系である。化合物の組成はYBa 2C
u 3O7−yで表わされる事が明らかになっており、
YをLu、 Yb、 Tm、 Er、Ho、 Dy、
Gd、 S c、 FJu などの稀土類元素にかえ
ても殆んど同等のTcを示す事も確認されている。結晶
構造はCu068面体を含むペロブスカイト類似構造を
もち、酸素欠損が超電導に重要な役割りを果たす事が知
られているが、酸素欠損の位置、欠損量(y)に関して
はまだ不明の点が多い13発明が解決しようとする問題
点
しかしながらこれまでの研究の多くは二味結木(セラミ
ックス)で行なわれている。ジョセフンン素子などの電
子デバイスを作成するには超電導材料の薄膜化が今後重
要性を帯びてくると思われ、すでにスパッタ法や蒸着法
による薄膜化もすでに報告されているが、薄膜の特性は
焼結体と比較してもTcや安定性の点で劣っている。Conventional technology Recently, high-temperature superconductors made of oxides have been attracting attention, but among these, the ones that have attracted particular attention and are being studied are
Y- with a superconducting transition temperature (Tc) on the order of 100
It is Ba-Cu-Q type. The composition of the compound is YBa 2C
It has been revealed that it is expressed as u3O7-y,
Y as Lu, Yb, Tm, Er, Ho, Dy,
It has also been confirmed that even when rare earth elements such as Gd, Sc, and FJu are used, almost the same Tc is exhibited. The crystal structure has a perovskite-like structure containing Cu06 octahedrons, and it is known that oxygen vacancies play an important role in superconductivity, but there are still many unknowns regarding the location and amount of oxygen vacancies (y). 13 Problems to be Solved by the Invention However, most of the research to date has been conducted on Futami Yuki (ceramics). Thin films of superconducting materials are expected to become important in the future for creating electronic devices such as Josephine elements, and thin films using sputtering and vapor deposition have already been reported, but the properties of thin films depend on baking. Even compared to solid bodies, they are inferior in terms of Tc and stability.
本発明の目的は薄膜超電導体におけるTcの向上と転移
温度巾の縮少、膜の安定化を提供することにある。An object of the present invention is to provide a thin film superconductor with improved Tc, reduced transition temperature range, and film stabilization.
問題点を解決するだめの手段
本発明は上記目的を達成するもので、超電導体MBa2
Cu3O7 、 (但し、MはY、 Lu、 Yh、T
m、 Er、 Ho、 Dy、 Gd%Sc、 Eu
のうちの少くとも1種、0≦y≦1)の膜とCuの酸
化物の膜を交互に積層して多層化することを特徴とする
、
作用
前述のような本発明の多層構造にすることにより、臨界
温度Tcの向上、転移温度巾の縮少、膜の安定化がはか
れる。ここでの膜の安定化とは、Tcの特性などが、温
度の昇降温や長時間放置を行っても再現性が良好に得ら
れることである。Means for Solving the Problems The present invention achieves the above objects, and is based on the superconductor MBa2.
Cu3O7, (However, M is Y, Lu, Yh, T
m, Er, Ho, Dy, Gd%Sc, Eu
The multilayer structure of the present invention as described above is characterized in that at least one film of 0≦y≦1) and a Cu oxide film are alternately laminated to form a multilayer structure. This improves the critical temperature Tc, reduces the transition temperature range, and stabilizes the film. The stabilization of the film here means that good reproducibility of the Tc characteristics can be obtained even if the temperature is raised or lowered or the film is left standing for a long time.
MBa2Cu3O7−、とCuの酸化物膜は、スパッタ
法又はエレクトロンビーム蒸着法で形成される1′−°
ことが好ましぐ、膜厚は10〜100OXが望ましい。The oxide films of MBa2Cu3O7- and Cu are 1'-° formed by sputtering or electron beam evaporation.
The film thickness is preferably 10 to 100 OX.
また、−船釣に特性のすぐれた薄膜を得ようとすると、
一基板としては、単結晶が用いられ、ある面でのエピタ
キシャル成長を行わせる。すでに発表されているMB
a 2Cu 3O7−δのスパッタ膜の基板としては、
5rTi03やMgOの単結晶が用いられている。本発
明の方法による薄膜超電導体は基板としては、非晶質性
のものでもよい。多層製膜後空気中あるいは空気よりよ
り02濃度の高いガス雰囲気中で、600〜950°C
で1時間以上熱処理を行うことにより、膜の電気特性は
より向上し安定化される。Also, when trying to obtain a thin film with excellent properties for boat fishing,
A single crystal is used as one substrate, and epitaxial growth is performed on a certain surface. MB already announced
As a substrate for the sputtered film of a 2Cu 3O7-δ,
Single crystals of 5rTi03 and MgO are used. In the thin film superconductor produced by the method of the present invention, the substrate may be amorphous. After forming a multilayer film, heat at 600 to 950°C in air or in a gas atmosphere with a higher concentration of 02 than air.
By performing heat treatment for one hour or more, the electrical properties of the film are further improved and stabilized.
実症例 以下に本発明の実施例を詳細に説明する。Actual case Examples of the present invention will be described in detail below.
まず、ベレット成形で90〜100’K にTcをもつ
YBa2C!u3O7 、の焼結粉末を作製した。この
粉末と酸化銅の粉末をターゲットとして用いて、1”L
Pマグネットロン式のスパッタ法により製膜な行った。First, YBa2C has a Tc of 90 to 100'K by pellet molding! A sintered powder of u3O7 was prepared. Using this powder and copper oxide powder as targets, 1”L
The film was formed by a P magnetron sputtering method.
基板としては、アルミナ基板を用いて、400°C程度
に加熱を行った。Y B a 20 u 3O7−yと
酸化鋼の膜厚はそれぞれ、2oo&と50λ程度であり
、総膜厚は2μmはどのものを得た。製膜後大気中で8
70°Cで5Hの処理を行った。この膜の電気特性を調
べたところ、Tcは950にで、転移中は焼結体と同程
度の幅であった。それぞれの成文の膜厚を変えてもTc
はあまり変化せずに、臨界電流Jcは変化したが、Jc
はlO3〜10 A/m の範囲にあった。製膜後熱
処理を行った膜は電気的特性も安定しており、大気中に
長時間放置しておいても特性の変化はみられなく、再現
性は良好であった。Yのかわりに、MとしてLu、 Y
b、Tm、 E r、 Ho、 Dy、 Gd%Sc、
Euを用いた場合も同様な特性が得られた。製膜後の
熱処理雰囲気は空気より02 濃度の高いガス雰囲気で
も同様の結果が得られた。An alumina substrate was used as the substrate and heated to about 400°C. The film thicknesses of Y B a 20 u 3 O7-y and oxidized steel were about 2oo & 50λ, respectively, and the total film thickness was 2 μm. 8 in the atmosphere after film formation
A 5H treatment was performed at 70°C. When the electrical properties of this film were examined, the Tc was found to be 950, and the width during transition was comparable to that of the sintered body. Even if the film thickness of each composition is changed, Tc
did not change much, and the critical current Jc changed, but Jc
was in the range of lO3 to 10 A/m. The electrical properties of the film that was heat-treated after film formation were stable, and even if it was left in the atmosphere for a long time, no change in properties was observed, and the reproducibility was good. Lu as M instead of Y, Y
b, Tm, E r, Ho, Dy, Gd%Sc,
Similar characteristics were obtained when Eu was used. Similar results were obtained even when the heat treatment atmosphere after film formation was a gas atmosphere with a higher 02 concentration than air.
発明の効果
以上、本発明はMBa2Cu3O7 、の膜とCuの酸
化物の膜を交互に多層に設けた薄膜多層超電導体を提供
するもので、Tcと転移温度巾は焼結体と同等で、Jc
が高く、安定性の高い薄膜超電導体が提供でき、ジlセ
フンン素子をはじめとする超電導素子の特性の向上を可
能ならしめる。As described above, the present invention provides a thin film multilayer superconductor in which MBa2Cu3O7 films and Cu oxide films are alternately provided in multilayers, and the Tc and transition temperature range are the same as those of a sintered body, and the Jc
A highly stable thin film superconductor can be provided, and the characteristics of superconducting devices such as dielectric devices can be improved.
Claims (4)
し、MはY、Lu、Yb、Tm、Er、Ho、Dy、G
d、Sc、Euのうち少くとも1種、0≦y≦1)の膜
とCuの酸化物の膜を交互に多層に設けたことを特徴と
する薄膜多層超電導体。(1) Superconductor MBa_2Cu_3O_7_-_y (where M is Y, Lu, Yb, Tm, Er, Ho, Dy, G
A thin film multilayer superconductor characterized in that films of at least one of d, Sc, and Eu (0≦y≦1) and films of Cu oxide are alternately provided in multiple layers.
酸化物の膜がスパッタ法又はエレクトロンビーム蒸着法
で形成されたことを特徴とする特許請求の範囲第1項記
載の薄膜多層超電導体。(2) The thin film multilayer superconductor according to claim 1, wherein the MBa_2Cu_3O_7_-_δ film and the Cu oxide film are formed by a sputtering method or an electron beam evaporation method.
酸化物の膜が膜形成後熱処理されたものであることを特
徴とする特許請求の範囲第1項記載の薄膜多層超電導体
。(3) The thin film multilayer superconductor according to claim 1, wherein the MBa_2Cu_3O_7_-_δ film and the Cu oxide film are heat-treated after film formation.
れたことを特徴とする特許請求の範囲第3項記載の薄膜
多層超電導体。(4) The thin film multilayer superconductor according to claim 3, wherein the heat treatment is performed in the air or an oxygen-enriched air atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62283548A JPH01125878A (en) | 1987-11-10 | 1987-11-10 | Thin film multilayer superconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62283548A JPH01125878A (en) | 1987-11-10 | 1987-11-10 | Thin film multilayer superconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01125878A true JPH01125878A (en) | 1989-05-18 |
Family
ID=17666950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62283548A Pending JPH01125878A (en) | 1987-11-10 | 1987-11-10 | Thin film multilayer superconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01125878A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01164725A (en) * | 1987-12-19 | 1989-06-28 | Toshiba Corp | Oxide superconducting thin film for electronic device |
WO1992005114A1 (en) * | 1990-09-21 | 1992-04-02 | Toray Industries, Inc. | Oxide superconductor |
US6465078B1 (en) | 1997-01-23 | 2002-10-15 | Daicel Chemical Industries, Ltd. | Recording sheet with an ink absorbing layer |
-
1987
- 1987-11-10 JP JP62283548A patent/JPH01125878A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01164725A (en) * | 1987-12-19 | 1989-06-28 | Toshiba Corp | Oxide superconducting thin film for electronic device |
WO1992005114A1 (en) * | 1990-09-21 | 1992-04-02 | Toray Industries, Inc. | Oxide superconductor |
US6465078B1 (en) | 1997-01-23 | 2002-10-15 | Daicel Chemical Industries, Ltd. | Recording sheet with an ink absorbing layer |
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