JPH03101545U - - Google Patents

Info

Publication number
JPH03101545U
JPH03101545U JP1027890U JP1027890U JPH03101545U JP H03101545 U JPH03101545 U JP H03101545U JP 1027890 U JP1027890 U JP 1027890U JP 1027890 U JP1027890 U JP 1027890U JP H03101545 U JPH03101545 U JP H03101545U
Authority
JP
Japan
Prior art keywords
external terminal
internal lead
semiconductor chip
semiconductor device
gel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1027890U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1027890U priority Critical patent/JPH03101545U/ja
Publication of JPH03101545U publication Critical patent/JPH03101545U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この考案の半導体装置の一実施例を
示す一部を省略した断面図、第2図は、従来のこ
の種の半導体装置の一部を省略した断面図である
。 1……ベース、2……ヒートスプレツダ、3,
5……温度補償板、6……内部リード、6a……
Sベンド部、7……外部端子、8……ケース、9
……封止樹脂、10……被覆部(ゲル状物質)、
11……隙間。
FIG. 1 is a partially omitted cross-sectional view showing an embodiment of the semiconductor device of this invention, and FIG. 2 is a partially omitted cross-sectional view of a conventional semiconductor device of this type. 1...Base, 2...Heat spreader, 3,
5...Temperature compensation plate, 6...Internal lead, 6a...
S-bend part, 7...External terminal, 8...Case, 9
... Sealing resin, 10 ... Covering part (gel-like substance),
11...Gap.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体チツプの一方の電極上に温度補償板を介
して一端が接続され、他端が外部端子に接続され
る内部リードを有し、これら半導体チツプおよび
外部端子の一部が樹脂封止される構造の半導体装
置において、前記内部リードにうち、相対的に横
断面積の小さい部位にゲル状物質で包囲した被覆
部を形成したことを特徴とする半導体装置。
A structure in which an internal lead is connected at one end to one electrode of a semiconductor chip via a temperature compensating plate and the other end is connected to an external terminal, and a portion of the semiconductor chip and external terminal are sealed with resin. 2. A semiconductor device according to claim 1, wherein a covering portion surrounded by a gel-like substance is formed in a portion of the internal lead having a relatively small cross-sectional area.
JP1027890U 1990-02-05 1990-02-05 Pending JPH03101545U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1027890U JPH03101545U (en) 1990-02-05 1990-02-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1027890U JPH03101545U (en) 1990-02-05 1990-02-05

Publications (1)

Publication Number Publication Date
JPH03101545U true JPH03101545U (en) 1991-10-23

Family

ID=31513855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1027890U Pending JPH03101545U (en) 1990-02-05 1990-02-05

Country Status (1)

Country Link
JP (1) JPH03101545U (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198740A (en) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp Resin seal type semiconductor compound element
JPS6076153A (en) * 1983-10-03 1985-04-30 Fuji Electric Co Ltd Resin sealed semiconductor device
JPS63104454A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Semiconductor device
JPH01296649A (en) * 1988-05-24 1989-11-30 Mitsubishi Electric Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198740A (en) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp Resin seal type semiconductor compound element
JPS6076153A (en) * 1983-10-03 1985-04-30 Fuji Electric Co Ltd Resin sealed semiconductor device
JPS63104454A (en) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Semiconductor device
JPH01296649A (en) * 1988-05-24 1989-11-30 Mitsubishi Electric Corp Semiconductor device

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