JPH0287645A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To accurately evaluate an influence of damage caused to an actual device by a method wherein a hole measurement is used when the damage of a dry etching operation is evaluated. CONSTITUTION:An evaluation element is constituted of an electrode part 1 composed of an Au/Ge/Ni metal and an active-layer part 2; when a substrate 3 is formed of GaAs, the active layer 2 is formed by an annealing operation after Si ions have been implanted. An evaluation operation is executed by the following procedure. The evaluation element is measured before a dry etching operation is executed; a reference data is obtained. Then, the evaluation element is dry-etched as it is. This dry etching operation is usually executed for about five minutes. The element is measured as it is without post-treatment. After the element has been measured, it is heat treated properly. The element is measured again. A ratio of this data to an initially measured result is used as an evaluation value of damage caused by the dry etching operation.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing and evaluating semiconductor devices, particularly for GaA
This paper relates to damage evaluation of dry etching in compound semiconductor devices such as S.

[Conventional technology]

Conventionally, in this type of evaluation, crystal evaluation was performed based on metal Schottky characteristics or photoluminescence on a dry etched surface.

[Problem to be solved by the invention]

The conventional evaluation described above has drawbacks in that it is difficult to perform accurate evaluation when the active layer concentration is low in metal Schottky characteristic evaluation, and it is difficult to perform quantitative evaluation in photoluminescence evaluation.

[Means to solve the problem]

The present invention is particularly characterized in that hole measurements are performed in evaluating damage caused by dry etching in the manufacture of compound semiconductor devices.

〔Example〕

Next, the present invention will be explained in more detail with reference to the drawings.

FIG. 1 shows a diagram of an embodiment of the present invention. The evaluation element is
Electrode part 1 made of A u / G e / Ni metal
and an active layer part 2, and the active layer 2 is composed of a substrate 3 and an active layer part 2.
is GaAs, Si ion implantation is performed at 40 k e
Injection energy 4-5X 10 of v~50 k eV
After conducting at a dose of "/cnt", annealing is performed at 800° C. to form the film.Evaluation is performed according to the following procedure.

■Measure the evaluation element before dry etching and use it as reference data. ■Next, dry etching is performed on the evaluation element as it is. Dry etching usually takes about 5 minutes. ■Measurements can be made without any post-processing.

Measurement diameters (1) and (2) Appropriate heat treatment (~400°C) is performed. ■
Measure again. Normally, it is impossible to measure by the measurement of (■), but the damage is thermally recovered by the heat treatment (■), and measurement is possible by the measurement of (■). The ratio of the data in (2) to the measurement result in (2) is taken as the evaluation value of dry etching damage.

Representative evaluation data for this example is shown in FIG. In the same figure, N s / N so is the data value measured in ■■
is the ratio of the measured value (=damage recovery rate) to the measurement result of the process parameter (e.g.
) By investigating the dependence, it becomes possible to quantitatively and accurately estimate the influence on the element.

Figure 3 shows another embodiment of the present invention, in which the evaluation element is a semi-insulating G
A hole pattern of only the active layer 4 is formed on the aAs substrate 5. Since this example does not have an ohmic electrode portion, damage recovery annealing after dry etching can be performed at a high temperature of 400°C or higher, and the recovery rate at annealing at around 800°C can be evaluated. The ohmic electrode is contacted with In metal after damage recovery annealing. When making an ohmic contact on the dry-etched surface, the contact resistance may increase significantly, so it is necessary to apply a protective film such as photoresist to the contact electrode portion before dry-etching.

〔Effect of the invention〕

Unlike conventional evaluation methods, the present invention has the advantage of being able to accurately and quantitatively evaluate damage caused by dry etching by using Hall measurement, thereby accurately evaluating the effects of damage on actual devices. It is possible to do so.

[Brief explanation of drawings]

1 and 3 are plan views each showing an embodiment of the present invention, and FIG. 2 is a graph showing an example of evaluation data for the embodiment of FIG. 1. 1... Ohmic electrode part consisting of A u / G e / Ni, 2... Active layer part, 3...
...Semi-insulating GaAs substrate, 4...
Active layer portion, 5...Semi-insulating GaAs substrate. Agent: Susumu Uchihara, 61m Figure 3

Claims (1)

[Claims] A method for manufacturing a semiconductor device, characterized in that damage caused by dry etching in manufacturing the semiconductor device is evaluated using Hall measurement.