JPH02848B2 - - Google Patents
Info
- Publication number
- JPH02848B2 JPH02848B2 JP55145463A JP14546380A JPH02848B2 JP H02848 B2 JPH02848 B2 JP H02848B2 JP 55145463 A JP55145463 A JP 55145463A JP 14546380 A JP14546380 A JP 14546380A JP H02848 B2 JPH02848 B2 JP H02848B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- resist
- chamber
- exposure
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
Landscapes
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55145463A JPS5769739A (en) | 1980-10-17 | 1980-10-17 | Exposing method and device for x-ray |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55145463A JPS5769739A (en) | 1980-10-17 | 1980-10-17 | Exposing method and device for x-ray |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5769739A JPS5769739A (en) | 1982-04-28 |
JPH02848B2 true JPH02848B2 (enrdf_load_stackoverflow) | 1990-01-09 |
Family
ID=15385813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55145463A Granted JPS5769739A (en) | 1980-10-17 | 1980-10-17 | Exposing method and device for x-ray |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5769739A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60178627A (ja) * | 1984-02-24 | 1985-09-12 | Canon Inc | X線転写装置 |
JPH04136901U (ja) * | 1991-06-13 | 1992-12-21 | 関東自動車工業株式会社 | 自動ブレーキ付キヤスタ |
-
1980
- 1980-10-17 JP JP55145463A patent/JPS5769739A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5769739A (en) | 1982-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6451512B1 (en) | UV-enhanced silylation process to increase etch resistance of ultra thin resists | |
EP0054412B1 (en) | Method of and apparatus for processing negative photoresist | |
US4806456A (en) | Dry development method for a resist film and an apparatus therefor | |
US6087076A (en) | Method of manufacturing semiconductor devices by performing coating, heating, exposing and developing in a low-oxygen or oxygen free controlled environment | |
KR900001238B1 (ko) | 레지스트막 건조현상 방법 및 장치 | |
JPH02848B2 (enrdf_load_stackoverflow) | ||
JPH0572747A (ja) | パターン形成方法 | |
KR0145643B1 (ko) | 전자빔으로 직접 묘화하는 방법 및 장치 | |
US5120634A (en) | Method for forming patterned resist layer on semiconductor body | |
JP2002043215A (ja) | レジストパターン形成方法および半導体製造装置および半導体装置および携帯情報端末 | |
US20020187434A1 (en) | Process for device fabrication in which the size of lithographically produced features is subsequently reduced | |
JPH09246156A (ja) | レジスト現像方法及びその装置 | |
JP2624168B2 (ja) | パターン形成方法および電子線描画装置 | |
EP0103052B1 (en) | Method for forming patterned resist layer on semiconductor body | |
TWI825960B (zh) | 半導體裝置的製造方法 | |
JPH06252040A (ja) | レジストパターン形成方法及びレジスト表面酸処理装置 | |
JPS59124133A (ja) | ネガテイブ型レジスト像の形成方法 | |
Kawai et al. | New Resist Technologies for 0.25-µ m Wiring Pattern Fabrication with KrF Lithography | |
JP2002208548A (ja) | レジストパターン形成方法 | |
JPH09312247A (ja) | パターン形成方法及びパターン形成装置 | |
JP4176162B2 (ja) | 化学増幅系フォトレジストの光反応解析方法および装置 | |
US20050208777A1 (en) | Film forming method, and substrate-processing apparatus | |
JP3175276B2 (ja) | 反応処理装置 | |
JPS6386434A (ja) | レジストパタ−ン形成方法 | |
Tsuda et al. | Dry developed negative resist in synchrotron radiation lithography |