JPH028137U - - Google Patents

Info

Publication number
JPH028137U
JPH028137U JP8565288U JP8565288U JPH028137U JP H028137 U JPH028137 U JP H028137U JP 8565288 U JP8565288 U JP 8565288U JP 8565288 U JP8565288 U JP 8565288U JP H028137 U JPH028137 U JP H028137U
Authority
JP
Japan
Prior art keywords
semiconductor device
wiring
parallel conductor
parallel
conductor portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8565288U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8565288U priority Critical patent/JPH028137U/ja
Publication of JPH028137U publication Critical patent/JPH028137U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図乃至第4図は、それぞれ本考案の第1乃
至第4実施例である半導体装置の平面図、第5図
は第1図乃至第4実施例における半導体装置の製
造方法を示した図、第6図は従来の半導体装置を
示した図である。 1……下層のAl配線、2……上層のAl配線
、3……スリツト、4……コンタクトホール。
1 to 4 are plan views of semiconductor devices according to the first to fourth embodiments of the present invention, respectively, and FIG. 5 is a diagram showing a method of manufacturing the semiconductor device according to the first to fourth embodiments of the present invention. , FIG. 6 is a diagram showing a conventional semiconductor device. 1... Lower layer Al wiring, 2... Upper layer Al wiring, 3... Slit, 4... Contact hole.

Claims (1)

【実用新案登録請求の範囲】 (1) 多層のアルミニウムAl配線を用いた集積
回路等の半導体装置において、前記アルミニウム
配線の交差部分に、複数の並列導体部分を有する
Al配線を用いたことを特徴とする半導体装置。 (2) 前記複数の並列導体部分はAl配線にスリ
ツトを形成したものであることを特徴とする請求
項(1)記載の半導体装置。 (3) 前記複数の並列導体部分は複数の導体を並
列接続することにより構成されるものであること
を特徴とする請求項(1)記載の半導体装置。
[Claims for Utility Model Registration] (1) A semiconductor device such as an integrated circuit using multilayer aluminum wiring, characterized in that an Al wiring having a plurality of parallel conductor parts is used at the intersection of the aluminum wiring. semiconductor device. (2) The semiconductor device according to claim 1, wherein the plurality of parallel conductor portions are formed by forming slits in Al wiring. (3) The semiconductor device according to claim (1), wherein the plurality of parallel conductor portions are constructed by connecting a plurality of conductors in parallel.
JP8565288U 1988-06-28 1988-06-28 Pending JPH028137U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8565288U JPH028137U (en) 1988-06-28 1988-06-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8565288U JPH028137U (en) 1988-06-28 1988-06-28

Publications (1)

Publication Number Publication Date
JPH028137U true JPH028137U (en) 1990-01-19

Family

ID=31310305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8565288U Pending JPH028137U (en) 1988-06-28 1988-06-28

Country Status (1)

Country Link
JP (1) JPH028137U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024950A1 (en) * 2003-09-05 2005-03-17 Fujitsu Limited Semiconductor device and method for manufacturing same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024950A1 (en) * 2003-09-05 2005-03-17 Fujitsu Limited Semiconductor device and method for manufacturing same
JPWO2005024950A1 (en) * 2003-09-05 2006-11-16 富士通株式会社 Semiconductor device and manufacturing method thereof
CN100390999C (en) * 2003-09-05 2008-05-28 富士通株式会社 Semiconductor device and method for manufacturing same
JP4500262B2 (en) * 2003-09-05 2010-07-14 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof

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