JPH028137U - - Google Patents
Info
- Publication number
- JPH028137U JPH028137U JP8565288U JP8565288U JPH028137U JP H028137 U JPH028137 U JP H028137U JP 8565288 U JP8565288 U JP 8565288U JP 8565288 U JP8565288 U JP 8565288U JP H028137 U JPH028137 U JP H028137U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wiring
- parallel conductor
- parallel
- conductor portions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1図乃至第4図は、それぞれ本考案の第1乃
至第4実施例である半導体装置の平面図、第5図
は第1図乃至第4実施例における半導体装置の製
造方法を示した図、第6図は従来の半導体装置を
示した図である。
1……下層のAl配線、2……上層のAl配線
、3……スリツト、4……コンタクトホール。
1 to 4 are plan views of semiconductor devices according to the first to fourth embodiments of the present invention, respectively, and FIG. 5 is a diagram showing a method of manufacturing the semiconductor device according to the first to fourth embodiments of the present invention. , FIG. 6 is a diagram showing a conventional semiconductor device. 1... Lower layer Al wiring, 2... Upper layer Al wiring, 3... Slit, 4... Contact hole.
Claims (1)
回路等の半導体装置において、前記アルミニウム
配線の交差部分に、複数の並列導体部分を有する
Al配線を用いたことを特徴とする半導体装置。 (2) 前記複数の並列導体部分はAl配線にスリ
ツトを形成したものであることを特徴とする請求
項(1)記載の半導体装置。 (3) 前記複数の並列導体部分は複数の導体を並
列接続することにより構成されるものであること
を特徴とする請求項(1)記載の半導体装置。[Claims for Utility Model Registration] (1) A semiconductor device such as an integrated circuit using multilayer aluminum wiring, characterized in that an Al wiring having a plurality of parallel conductor parts is used at the intersection of the aluminum wiring. semiconductor device. (2) The semiconductor device according to claim 1, wherein the plurality of parallel conductor portions are formed by forming slits in Al wiring. (3) The semiconductor device according to claim (1), wherein the plurality of parallel conductor portions are constructed by connecting a plurality of conductors in parallel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8565288U JPH028137U (en) | 1988-06-28 | 1988-06-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8565288U JPH028137U (en) | 1988-06-28 | 1988-06-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH028137U true JPH028137U (en) | 1990-01-19 |
Family
ID=31310305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8565288U Pending JPH028137U (en) | 1988-06-28 | 1988-06-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH028137U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005024950A1 (en) * | 2003-09-05 | 2005-03-17 | Fujitsu Limited | Semiconductor device and method for manufacturing same |
-
1988
- 1988-06-28 JP JP8565288U patent/JPH028137U/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005024950A1 (en) * | 2003-09-05 | 2005-03-17 | Fujitsu Limited | Semiconductor device and method for manufacturing same |
JPWO2005024950A1 (en) * | 2003-09-05 | 2006-11-16 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
CN100390999C (en) * | 2003-09-05 | 2008-05-28 | 富士通株式会社 | Semiconductor device and method for manufacturing same |
JP4500262B2 (en) * | 2003-09-05 | 2010-07-14 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |