JPH0281029A - Production of liquid crystal display device - Google Patents
Production of liquid crystal display deviceInfo
- Publication number
- JPH0281029A JPH0281029A JP63234106A JP23410688A JPH0281029A JP H0281029 A JPH0281029 A JP H0281029A JP 63234106 A JP63234106 A JP 63234106A JP 23410688 A JP23410688 A JP 23410688A JP H0281029 A JPH0281029 A JP H0281029A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- liquid crystal
- auxiliary
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 84
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009751 slip forming Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、アクチブマトリクス型の液晶表示装置の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing an active matrix type liquid crystal display device.
（ロ）従来の技術
近年非晶質半導体材料、特にアモルファス・ジノコン（
以下ａ−５ｉと略記する）膜等の非晶質材料は、その物
性■−の特徴及びプラズマＣＶＤ法という形成法の利点
をいかしてこれまでの単結晶シリコン（ｃ−５ｉ）では
実現不可能であった分野への応用を開拓している。特に
ａ−Ｓｉ膜はプラズマ反応という形成法で成膜できるた
め、太陽電池や大面積液晶ＴＶ用のスインチング素子な
どに応用されている。(b) Conventional technology In recent years, amorphous semiconductor materials, especially amorphous dinocon (
Amorphous materials such as films (hereinafter abbreviated as a-5i) cannot be realized with conventional single crystal silicon (c-5i) by taking advantage of its physical properties and the advantages of the plasma CVD method. We are pioneering applications in fields that were In particular, since a-Si films can be formed by a formation method called plasma reaction, they are applied to solar cells, switching elements for large-area liquid crystal TVs, and the like.
アクティブマトリックス型の液晶テレビへのａ−８ｉ薄
膜トランジスタ（以下ＴＰＴとする）スインチング素子
の応用は、プラズマ反応の大面積化の容易さといったメ
リットをいかしたものであるが、同時に同反応法によっ
てＴＰＴを構成するゲート絶縁膜やパッシベーション膜
となる窒化ジノコン（以下５ｉＮｘ）膜や酸化シリコン
（以下Ｓｉｎ、）膜を反応ガスを変えるだけで形成でき
るという長所も利用している。The application of the A-8I thin film transistor (hereinafter referred to as TPT) switching element to active matrix type LCD televisions takes advantage of the advantages such as the ease of increasing the area of plasma reaction. It also takes advantage of the fact that the dinocon nitride (hereinafter referred to as 5iNx) film and the silicon oxide (hereinafter referred to as "Sin") film that serve as the gate insulating film and passivation film can be formed by simply changing the reactive gas.
しかしながら、ＴＰＴを用いた液晶ＴＶでは、液晶をコ
ンデンサと見做した電荷蓄積作用を利用して、映像を表
示している。そのため、映像信号の１フレーム毎に更新
されるＬα品の充ｉｔ荷は、そのフレームの間保持され
なければならないが、らし、この期間、リークにより液
晶の保持電圧が低下したならば、表示品質の劣化を招く
。このため、従来から液晶による容量と並列に補助容量
を設け、表示劣化を防止する構造が提案されている［特
開昭５７ ３０８８号］。However, in a liquid crystal TV using TPT, images are displayed using the charge accumulation effect of the liquid crystal, which is regarded as a capacitor. Therefore, the charge of the Lα product, which is updated every frame of the video signal, must be maintained during that frame, but if the holding voltage of the liquid crystal decreases due to leakage during this period, the display quality will decrease. leading to deterioration. For this reason, a structure has conventionally been proposed in which an auxiliary capacitor is provided in parallel with the capacitor provided by the liquid crystal to prevent display deterioration [JP-A-57-3088].
このような補助容量の付設構造としては、一般に次の二
種類ある。一つは、第３図に示すように絶縁性基板（１
）上にゲート金属膜（３）、ゲート用絶縁膜（４）、
！Ｐ導体薄膜（５）、不純物半導体膜（６）、ドレイ
ン並びにソース用金属膜（８）からなるＴＰＴに表示電
極（７）を結合してなる液晶表示装置に於て、表示用透
明を極（７）と絶縁性基板との間に補助容量用透明１を
極（２）を設け、絶縁膜を介して表示用透明電極（７）
と補助容量用透明を極（２）を対向させたものである。There are generally two types of structures for attaching such auxiliary capacity: One is an insulating substrate (1
) on which a gate metal film (3), a gate insulating film (4),
! In a liquid crystal display device in which a display electrode (7) is bonded to a TPT consisting of a P conductor thin film (5), an impurity semiconductor film (6), and a metal film for drain and source (8), the display transparent layer is polarized ( 7) and an insulating substrate, a transparent electrode 1 for auxiliary capacitance (2) is provided, and a transparent electrode for display (7) is provided via an insulating film.
and the transparent electrode for auxiliary capacitance with the poles (2) facing each other.
もう一つの構造とは、第４図に示すように表示用透明電
極（７）とガラス基板との間に隣接ゲート金属膜（３）
を延在させで、これを補助容ｉ ＴＬＩＪｉｉとなし、
この延在したゲート金属膜（３）と表示用透明を極（７
）とをゲート用絶縁膜（４）に連続した絶縁膜を介して
対向させたものである。The other structure is that, as shown in Figure 4, there is an adjacent gate metal film (3) between the display transparent electrode (7) and the glass substrate.
Extend this and make it auxiliary volume i TLIJii,
This extended gate metal film (3) and the transparent display layer are connected to the pole (7).
) are opposed to the gate insulating film (4) with a continuous insulating film interposed therebetween.
（ハ）発明が解決しようとする課題
ト述の如くゲート絶縁膜（４）を同時に補助容量用絶縁
膜（１０）として兼用する第４図の液晶表示装置の場合
、これら両膜（４）（１０）を個別に形成した第３図の
装置と比べて、工程数が少なくなり歩どまりの向上が望
め、大面積パネルの製造に最適である。しかしながらゲ
ート絶縁膜（４）と補助容量用絶縁膜（１０）を同一の
膜で構成するため、その膜厚設計が問題となる。(c) Problems to be Solved by the Invention As described in (iii) above, in the case of the liquid crystal display device shown in FIG. Compared to the apparatus shown in FIG. 3 in which 10) are formed individually, the number of steps is reduced and the yield can be expected to be improved, making it ideal for manufacturing large-area panels. However, since the gate insulating film (4) and the auxiliary capacitance insulating film (10) are made of the same film, the design of the film thickness poses a problem.
即ち、通常は液晶の画素電位は、ＴＰＴのゲート？１を
極とソース電極で構成される容量Ｃｇｓが存在するため
、ＴＰＴがＯＦＦ状態になる瞬間に、書き込まれた電位
からある電位だけ低下する。この低下電位は、液晶の容
量と、補助容量そしてこの容量Ｃｇｓによって決定され
る。この場合、補助容量が、大きいものほど、電位低下
が少なくてすみ表示品質の低下を抑制できる。That is, normally the pixel potential of the liquid crystal is the gate potential of the TPT? Since there is a capacitance Cgs composed of a pole of 1 and a source electrode, the potential decreases by a certain amount from the written potential at the moment the TPT is turned off. This lowered potential is determined by the capacitance of the liquid crystal, the auxiliary capacitance, and this capacitance Cgs. In this case, the larger the auxiliary capacitance is, the less the potential drop is required and the deterioration in display quality can be suppressed.
しかしながら、補助容量の設置は、ＴＰＴのオン電流を
増加させてしまうため、その容量としての大きさには限
度がある。このため、これらを考慮にいれて容量を設計
する必要がある。例えば、補助容量を大きく設計するた
めには、表示用電極（７）とゲート金属膜（３）との重
なり面積を大きくする必要があり、このことは、開口率
の低下という問題を引き起こした。又、他の方法として
は、補助容量の絶縁膜の膜厚を小さくし、容量を大きく
する方法がある。また、ＴＰＴの動作特性にとっても、
ゲート用絶縁膜（３）は薄い方がよいが、上部のドレイ
ン又はソースとのショートを回避するために３０００〜
４０００Å以上の厚みが必要とされている。However, since installing an auxiliary capacitor increases the on-state current of the TPT, there is a limit to its capacity. Therefore, it is necessary to take these into consideration when designing the capacity. For example, in order to design a large auxiliary capacitance, it is necessary to increase the overlapping area between the display electrode (7) and the gate metal film (3), which causes a problem of a reduction in the aperture ratio. Another method is to reduce the thickness of the insulating film of the auxiliary capacitor to increase the capacitance. Also, regarding the operating characteristics of TPT,
The thinner the gate insulating film (3) is, the thinner it is, but in order to avoid a short circuit with the upper drain or source,
A thickness of 4000 Å or more is required.
従って、第４図の場合、同一の絶縁膜でゲート絶縁膜（
４）と補助容量用絶縁膜（１０）を兼ねているので、補
助容量増大のために膜厚を薄くすると、絶縁膜（４）は
ゲート金属膜（３）とドレイン・ソース電極（８）との
ショートを多発させ、本来の目的である歩どまりの向上
かはたせず、かえってこれを低下させてしまうという欠
点があった。Therefore, in the case of Fig. 4, the gate insulating film (
4) and the insulating film (10) for auxiliary capacitance, so when the film thickness is made thinner to increase the auxiliary capacitance, the insulating film (4) becomes the gate metal film (3) and the drain/source electrode (8). This method has the drawback of causing frequent short circuits, and instead of improving the yield, which is the original purpose, it actually decreases.
（ニ）課題を解決するための手段
本発明の液晶表示装置の製造方法は、絶縁性基板上にゲ
ート金属膜、ゲート用絶縁膜、非結晶半導体、ドレイン
並びにソース用金属膜からなる薄膜トランジスタを７ト
リクス状に配置し、各トランジスタに表示電極を結合す
ると共に、該表示電極に対し補助容量用絶縁膜を介して
補助容量電極を対向配置した液晶表示装置の製造方法に
於て、前記ゲート用絶縁膜と前記補助容量用絶縁膜とを
同一絶縁膜で形成する工程を有し、後工程にて補助容量
用絶縁膜相当部の該絶縁膜を所定の膜厚にエツチングす
るものである。(d) Means for Solving the Problems The method for manufacturing a liquid crystal display device of the present invention comprises forming 7 thin film transistors each consisting of a gate metal film, a gate insulating film, an amorphous semiconductor, and a drain and source metal film on an insulating substrate. In the method for manufacturing a liquid crystal display device in which a display electrode is coupled to each transistor arranged in a matrix, and a storage capacitance electrode is arranged opposite to the display electrode via a storage capacitance insulating film, the gate insulating The method includes a step of forming the film and the auxiliary capacitor insulating film using the same insulating film, and in a later step, the insulating film corresponding to the auxiliary capacitor insulating film is etched to a predetermined thickness.
（ホ）作用
本発明の液晶表示装置の製造方法によれば、ゲート用絶
縁膜と補助容量用絶縁膜とを同一絶縁膜で形成し、その
後補助容量相当部の該絶縁膜を所定の膜厚にエツチング
するものであるので、補助容量用電極部分の絶縁膜を所
望の膜厚に形成できる。これにより、後工程で形成する
表示用透明ｉ１ｉ極と、先に形成した補助容量用電極と
の間で容量値の小さい容量を簡単に得ることができる。(E) Function According to the method for manufacturing a liquid crystal display device of the present invention, the insulating film for the gate and the insulating film for the auxiliary capacitor are formed of the same insulating film, and then the insulating film in the portion corresponding to the auxiliary capacitor is formed to a predetermined thickness. Since the etching is performed in a similar manner, the insulating film of the auxiliary capacitor electrode portion can be formed to a desired thickness. Thereby, a capacitor with a small capacitance value can be easily obtained between the display transparent i1i electrode formed in a later step and the auxiliary capacitor electrode formed previously.
（へ）実施例
本発明の製造方法にて得られる液晶表示装置の一実施例
を第１図に示し、その製造工程順を第２図（ａ）〜（ｇ
）に示す。(f) Example An example of a liquid crystal display device obtained by the manufacturing method of the present invention is shown in FIG. 1, and the order of the manufacturing process is shown in FIGS.
).
これらの図に基すき本発明の液晶表示装置の製造方法を
以下に詳述する。The method for manufacturing a liquid crystal display device of the present invention will be described in detail below based on these figures.
まず、ガラス板からなる絶縁性基板（＋、）上にＩＴＯ
からなる補助容量用電極（２）をパターン形成する。次
に、金クロムでゲート金属膜（３）を形成しパターニン
グする［第２図（ａ）］。First, ITO was placed on an insulating substrate (+,) made of a glass plate.
A auxiliary capacitance electrode (2) consisting of the following is patterned. Next, a gate metal film (3) is formed of gold chromium and patterned [FIG. 2(a)].
さらに、プラズマ反応法等によって、ＳｉＮｘあるいは
ＳｉＯｘからなる絶縁１１！（４）、活性層ヒしての例
えばａ−５ｉからなる非晶質半導体膜（５）、さらに、
不純物をドープした例えば＋ｉ”ａ−５ｉ膜からなるオ
ーミックコンタクト用半導体膜（６）を連続して形成す
る［第２図（Ｃ）］。このとき、ゲート用絶縁膜の膜厚
Ａは、ドレイン・ゲート、ソース・ゲート間のショート
が発生しないように充分１γく設定する。例えば、Ａ＝
４０００人とする。Furthermore, the insulation 11 made of SiNx or SiOx is further processed using a plasma reaction method or the like. (4), an amorphous semiconductor film (5) made of, for example, a-5i as an active layer;
An ohmic contact semiconductor film (6) made of, for example, a +i"a-5i film doped with impurities is continuously formed [Figure 2 (C)]. At this time, the film thickness A of the gate insulating film is equal to that of the drain.・Set 1γ sufficiently so that short circuit between gate and source and gate does not occur.For example, A=
The number of people will be 4,000.
次に、オーミンクコンタクト用半導体膜（６）と非晶質
半導体膜（５）とを同一のレジストでパターンにエツチ
ングする［第２図（ｄ）］。そして、補補助容量用電極
２）と、後工程で形成される表示用透明電極（７）とが
重なる部分を開ロバターン［第１図の破線で示す］とし
て残したレジスト［第２図には図示せず］をコートし、
絶縁膜（４）用のエッチャントにより、補助容量用絶縁
膜として所望の膜厚Ｂにまで薄くなるようにエツチング
研摩する［第２図（ｄ）］。例えば、Ｂ＝２０００人と
する。Next, the semiconductor film (6) for ohmink contact and the amorphous semiconductor film (5) are etched into a pattern using the same resist [FIG. 2(d)]. Then, a resist [shown in FIG. 2 as shown in FIG. 2] is left as an open pattern [indicated by the broken line in FIG. (not shown)
Using an etchant for the insulating film (4), the insulating film (4) is etched and polished so as to be thinned to a desired film thickness B as an auxiliary capacitance insulating film [FIG. 2(d)]. For example, let B=2000 people.
次に、ＩＴＯからなる補助容量用透明電極（７）を形成
パターニングする［第２図（ｅ）］。さらにアルミでド
レイン、及びソース用金属膜（８）を形成パターニング
し、ＴＰＴのチャネル部に残されたオーミンクコンタク
ト用半導体膜（６）をエツチング除去すると液晶表示装
置用ＴＦＴアレイは完成する［第２図（ｇ）〕。Next, a transparent electrode (7) for auxiliary capacitance made of ITO is formed and patterned [FIG. 2(e)]. Furthermore, a metal film (8) for the drain and source is formed and patterned using aluminum, and the semiconductor film (6) for the ohmink contact left in the channel part of the TPT is removed by etching to complete the TFT array for the liquid crystal display device. Figure 2 (g)].
斯くして得られたＴＦＴアレイ基板を液晶物質を介して
共通電極基板に対向配置することにより液晶表示装置が
得らｔする。A liquid crystal display device is obtained by arranging the thus obtained TFT array substrate facing a common electrode substrate with a liquid crystal material interposed therebetween.
本実施例では、半導体膜（５）のエツチング用レジスト
と５補助容量用の絶縁膜（４）の膜厚加１用レジストを
異なるものとしで説明したが、これらレジストは、全く
同じものを用いても、基本的には問題がない。この場合
、半導体膜（５）用レジストによって、オーミックコン
タクト用の不純物半導体１１便（６）、半導体膜（５）
の連続エツチングに引き続き、補助容量用の絶縁１１！
（４）のエツチングを行うことができ、製造工程の簡略
化が図れる。In this example, the resist for etching the semiconductor film (5) and the resist for increasing the film thickness of the insulating film (4) for the auxiliary capacitance (5) were explained as being different, but these resists are exactly the same. However, there is basically no problem. In this case, by using the resist for the semiconductor film (5), the impurity semiconductor 11 for ohmic contact (6), the semiconductor film (5)
Following the continuous etching, insulation for auxiliary capacitance 11!
Etching (4) can be performed, and the manufacturing process can be simplified.
（ト）発明の効果
本発明の液晶表示装置の製造方法によれば、同一の絶縁
膜をＴＰＴにおけるゲート用および補助容量用のそれぞ
れに最適な膜厚として利用することが可能となる。(G) Effects of the Invention According to the method of manufacturing a liquid crystal display device of the present invention, it is possible to use the same insulating film with the optimum film thickness for each of the gate and auxiliary capacitance in the TPT.
従って、ゲート用絶縁膜として用いる部分においてはゲ
ート金属膜とその」二部のドレイン、ソース金属膜との
ショートが発生（７ないように充分なＩ１％厚を確保で
きる上に、補助容量用絶縁膜とじて用いる部分では高容
量値化、薄膜化が図れ、補助容量用を極と表示用透明電
極との重なり面積を大きくとる必要がなくなる。このこ
とは、ゲート金属膜を同時に補助容量用電極としてもち
いる素子構造のものに於ては、ゲート用金属膜によって
遮光される部分が少なくなり、画素の開口率が、向上す
るなどの効果が望める。Therefore, in the part used as the gate insulating film, it is possible to ensure a sufficient I1% thickness to prevent short circuits between the gate metal film and its two parts, the drain and source metal films. In the part used as a membrane, the capacitance value can be increased and the film can be made thinner, and there is no need to have a large overlapping area between the auxiliary capacitance electrode and the display transparent electrode.This means that the gate metal film can be simultaneously connected to the auxiliary capacitance electrode. In the device structure used as a gate electrode, the light shielded portion by the gate metal film is reduced, and the aperture ratio of the pixel is improved.
第１図は本発明に係る液晶表示装置の平面図、第２図（
ａ）〜（ｇ）は本発明の液晶表示装置の製造方法を示す
工程断面図、第３図及び第４図はそれぞれ異なる従来装
置の断面図である。
（＋）・・・絶縁基板、（２）・・・補助容量電極、（
３）・・・ゲート用金属膜、（４）・・・絶縁膜、（５
）・・・非結晶半導体、（６）・・・不純物をドープし
た半導体、（７）・・・表示用！極、（８）・・・ドレ
イン、ソース用金属膜、（１０）・・・補助容量用絶縁
膜。FIG. 1 is a plan view of a liquid crystal display device according to the present invention, and FIG.
a) to (g) are process cross-sectional views showing the method of manufacturing a liquid crystal display device of the present invention, and FIGS. 3 and 4 are cross-sectional views of different conventional devices. (+)...Insulating substrate, (2)...Auxiliary capacitance electrode, (
3)...Metal film for gate, (4)...Insulating film, (5
)...Amorphous semiconductor, (6)...Semiconductor doped with impurities, (7)...For display! Pole, (8)...Metal film for drain and source, (10)...Insulating film for auxiliary capacitance.
Claims (1)
半導体膜、ドレイン並びにソース用金属膜からなる薄膜
トランジスタをマトリクス状に配置し、各トランジスタ
に表示電極を結合すると共に、該表示電極に対し補助容
量用絶縁膜を介して補助容量電極を対向配置した液晶表
示装置の製造方法に於て、 前記ゲート用絶縁膜と前記補助容量用絶縁膜とを同一絶
縁膜で形成する工程を有し、後工程にて補助容量用絶縁
膜相当部の該絶縁膜を所定の膜厚にエッチングすること
を特徴とした液晶表示装置の製造方法。(1) Gate metal film, gate insulating film on an insulating substrate,
A liquid crystal in which thin film transistors each consisting of a semiconductor film, a drain metal film, and a source metal film are arranged in a matrix, a display electrode is coupled to each transistor, and an auxiliary capacitor electrode is arranged opposite to the display electrode via an auxiliary capacitor insulating film. The method for manufacturing a display device includes a step of forming the gate insulating film and the auxiliary capacitor insulating film with the same insulating film, and in a later step, the insulating film corresponding to the auxiliary capacitor insulating film is replaced with the same insulating film. A method for manufacturing a liquid crystal display device characterized by etching to a predetermined thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23410688A JP2584290B2 (en) | 1988-09-19 | 1988-09-19 | Manufacturing method of liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23410688A JP2584290B2 (en) | 1988-09-19 | 1988-09-19 | Manufacturing method of liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0281029A true JPH0281029A (en) | 1990-03-22 |
| JP2584290B2 JP2584290B2 (en) | 1997-02-26 |
Family
ID=16965724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23410688A Expired - Fee Related JP2584290B2 (en) | 1988-09-19 | 1988-09-19 | Manufacturing method of liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584290B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002122881A (en) * | 2000-10-13 | 2002-04-26 | Nec Corp | Liquid crystal display device and its manufacturing method |
| JP2007121793A (en) * | 2005-10-31 | 2007-05-17 | Epson Imaging Devices Corp | Liquid crystal display device and manufacturing method thereof |
| JP2007140458A (en) * | 2005-11-23 | 2007-06-07 | Samsung Sdi Co Ltd | Liquid crystal display array board and method of fabricating same |
| US7525605B2 (en) | 2006-05-29 | 2009-04-28 | Epson Imaging Devices Corporation | Liquid crystal display device and manufacturing method thereof |
| JP2010262006A (en) * | 2009-04-30 | 2010-11-18 | Sony Corp | Display device, method of manufacturing the same, semiconductor device, and electronic apparatus |
| DE102016225549A1 (en) | 2015-12-22 | 2017-06-22 | Mitsubishi Electric Corporation | Liquid crystal display device and its method of preparation |
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| JP4900332B2 (en) * | 2005-09-13 | 2012-03-21 | ソニー株式会社 | Manufacturing method of liquid crystal display device |
| CN100485470C (en) * | 2005-09-13 | 2009-05-06 | 爱普生映像元器件有限公司 | Liquid crystal display device and method for manufacturing the same |
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| JP4285533B2 (en) | 2006-12-04 | 2009-06-24 | エプソンイメージングデバイス株式会社 | Liquid crystal display device and manufacturing method thereof |
| JP5046915B2 (en) * | 2007-12-27 | 2012-10-10 | 京セラ株式会社 | Display device substrate, display device, and method of manufacturing display device substrate |
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| JP5109887B2 (en) | 2008-09-12 | 2012-12-26 | エプソンイメージングデバイス株式会社 | Liquid crystal display |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58106860A (en) * | 1981-12-18 | 1983-06-25 | Seiko Epson Corp | Matrix substrate for thin-film transistor |
| JPS6055383A (en) * | 1983-09-06 | 1985-03-30 | 株式会社東芝 | Transmission type liquid crystal display unit |
-
1988
- 1988-09-19 JP JP23410688A patent/JP2584290B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58106860A (en) * | 1981-12-18 | 1983-06-25 | Seiko Epson Corp | Matrix substrate for thin-film transistor |
| JPS6055383A (en) * | 1983-09-06 | 1985-03-30 | 株式会社東芝 | Transmission type liquid crystal display unit |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002122881A (en) * | 2000-10-13 | 2002-04-26 | Nec Corp | Liquid crystal display device and its manufacturing method |
| JP2007121793A (en) * | 2005-10-31 | 2007-05-17 | Epson Imaging Devices Corp | Liquid crystal display device and manufacturing method thereof |
| JP2007140458A (en) * | 2005-11-23 | 2007-06-07 | Samsung Sdi Co Ltd | Liquid crystal display array board and method of fabricating same |
| US7525605B2 (en) | 2006-05-29 | 2009-04-28 | Epson Imaging Devices Corporation | Liquid crystal display device and manufacturing method thereof |
| JP2010262006A (en) * | 2009-04-30 | 2010-11-18 | Sony Corp | Display device, method of manufacturing the same, semiconductor device, and electronic apparatus |
| DE102016225549A1 (en) | 2015-12-22 | 2017-06-22 | Mitsubishi Electric Corporation | Liquid crystal display device and its method of preparation |
| US9880436B2 (en) | 2015-12-22 | 2018-01-30 | Mitsubishi Electric Corporation | Liquid crystal display device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2584290B2 (en) | 1997-02-26 |
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