JP2584290B2 - Manufacturing method of liquid crystal display device - Google Patents
Manufacturing method of liquid crystal display deviceInfo
- Publication number
- JP2584290B2 JP2584290B2 JP23410688A JP23410688A JP2584290B2 JP 2584290 B2 JP2584290 B2 JP 2584290B2 JP 23410688 A JP23410688 A JP 23410688A JP 23410688 A JP23410688 A JP 23410688A JP 2584290 B2 JP2584290 B2 JP 2584290B2
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- JP
- Japan
- Prior art keywords
- insulating film
- film
- liquid crystal
- display device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は、アクチティブマトリクス型の液晶表示装置
の製造方法に関する。The present invention relates to a method for manufacturing an active matrix type liquid crystal display device.
（ロ） 従来の技術 近年非晶質半導体材料、特にアモルファス・シリコン
（以下ａ−Siと略記する）膜等の非晶質材料は、その物
性上の特徴及びプラズマCVD法という形成法の利点をい
かしてこれまでの単結晶シリコン（ｃ−Si）では実現不
可能であった分野への応用を開拓している。特にａ−Si
膜はプラズマ反応という形成法で成膜できるため、太陽
電池や大面積液晶TV用のスイッチング素子などに応用さ
れている。(B) Conventional technology In recent years, amorphous semiconductor materials, particularly amorphous materials such as amorphous silicon (hereinafter abbreviated as a-Si) films, have been characterized by their physical properties and the advantages of the plasma CVD method. We are exploring applications in fields that were not feasible with conventional single crystal silicon (c-Si). Especially a-Si
Since the film can be formed by a formation method called a plasma reaction, it is applied to a switching element for a solar cell or a large-area liquid crystal TV.
アクティブマトリックス型の液晶テレビへのａ−Si薄
膜トランジスタ（以下TFTとする）スイッチング素子の
応用は，プラズマ反応の大面積化の容易さといったメリ
ットをいかしたものであるが、同時に同反応法によって
TFTを構成するゲート絶縁膜やパッシベーション膜とな
る窒化シリコン（以下SiNX）膜や酸化シリコン（以下Si
O2）膜を反応ガスを変えるだけで形成できるという長所
も利用している。The application of a-Si thin-film transistors (hereinafter referred to as TFTs) switching elements to active-matrix liquid crystal televisions takes advantage of the ease of increasing the area of plasma reactions.
Silicon nitride (SiN x ) and silicon oxide (Si
It also has the advantage that an O 2 ) film can be formed simply by changing the reaction gas.
しかしながら、TFTを用いた液晶TVでは、液晶をコン
デンサと見做した電荷蓄積作用を利用して、映像を表示
している。そのため、映像信号の１フレーム毎に更新さ
れる液晶の充電電荷は、そのフレームの間保持されなけ
ればならないが、もし、この期間、リークにより液晶の
保持電圧が低下したならば、表示品質の劣化を招く。こ
のため、従来から液晶による容量と並列に補助容量を設
け、表示劣化を防止する構造が提案されている［特開昭
57−3088号］。However, in a liquid crystal TV using a TFT, an image is displayed by utilizing a charge storage action in which the liquid crystal is regarded as a capacitor. Therefore, the charge of the liquid crystal, which is updated for each frame of the video signal, must be held during that frame. However, if the holding voltage of the liquid crystal decreases during this period due to leakage, the display quality deteriorates. Invite. For this reason, conventionally, a structure has been proposed in which an auxiliary capacitor is provided in parallel with the liquid crystal capacitor to prevent display degradation [
No. 57-3088].
このような補助容量の付設構造としては、一般に次の
二種類がある。一つは、第３図に示すように絶縁性基板
（１）上にゲート金属膜（３）、ゲート用絶縁膜
（４）、半導体薄膜（５）、不純物半導体膜（６）、ド
レイン並びにソース用金属膜（８）からなるTFTに表示
電極（７）を結合してなる液晶表示装置に於て、表示用
透明電極（７）と絶縁性基板との間に補助容量用透明電
極（２）を設け、絶縁膜（10）を介して表示用透明電極
（７）と補助容量用透明電極（２）を対向させたもので
ある。もう一つの構造とは、第４図に示すように表示用
透明電極（７）とガラス基板との間に隣接ゲート金属膜
（９）を延在させて、これを補助容量電極となし、この
延在したゲート金属膜（９）と表示用透明電極（７）と
をゲート用絶縁膜（４）に連続した絶縁膜を介して対向
させたものである。Generally, there are the following two types of structures for providing such auxiliary capacitors. One is a gate metal film (3), a gate insulating film (4), a semiconductor thin film (5), an impurity semiconductor film (6), a drain and a source on an insulating substrate (1) as shown in FIG. In a liquid crystal display device in which a display electrode (7) is coupled to a TFT comprising a metal film (8) for display, a transparent electrode (2) for an auxiliary capacitor is provided between the transparent electrode (7) for display and an insulating substrate. And a transparent electrode for display (7) and a transparent electrode for auxiliary capacitance (2) are opposed to each other via an insulating film (10). Another structure is that, as shown in FIG. 4, an adjacent gate metal film (9) is extended between a transparent electrode for display (7) and a glass substrate to form an auxiliary capacitance electrode. The extended gate metal film (9) and the display transparent electrode (7) are opposed to each other via an insulating film continuous with the gate insulating film (4).
（ハ） 発明が解決しょうとする課題 上述の如くゲート絶縁膜（４）を同時に補助容量用絶
縁膜（10）として兼用する第４図の液晶表示装置の場
合、これら両膜（４）（10）を個別に形成した第３図の
装置と比べて、工程数が少なくなり歩どまりの向上が望
め、大面積パネルの製造に最適である。しかしながらゲ
ート絶縁膜（４）と補助容量用絶縁膜（10）を同一の膜
で構成するため、その膜厚設計が問題となる。(C) Problems to be Solved by the Invention As described above, in the case of the liquid crystal display device of FIG. 4 in which the gate insulating film (4) is also used as the auxiliary capacitance insulating film (10) at the same time, these two films (4) (10) 3), the number of steps is reduced and the yield is expected to be higher than that of the apparatus shown in FIG. 3, which is optimal for manufacturing large-area panels. However, since the gate insulating film (4) and the auxiliary capacitance insulating film (10) are formed of the same film, designing the film thickness is problematic.
即ち、通常は液晶の画素電位は、TFTのゲート電極と
ソース電極で構成される容量Cgsが存在するため、TFTが
OFF状態になる瞬間に、書き込まれた電位からある電位
だけ低下する。この低下電位は、液晶の容量と、補助容
量そしてこの容量Cgsによって決定される。この場合，
補助容量が、大きいものほど、電位低下が少なくてすみ
表示品質の低下を抑制できる。That is, the pixel potential of the liquid crystal usually has a capacitance Cgs composed of the gate electrode and the source electrode of the TFT, and thus the TFT
At the moment of the OFF state, the potential is reduced by a certain potential from the written potential. This lowering potential is determined by the capacitance of the liquid crystal, the auxiliary capacitance, and the capacitance Cgs. in this case,
The larger the auxiliary capacitance, the smaller the potential drop and the more the display quality can be suppressed.
しかしながら、補助容量の設置は、TFTのオン電流を
大きく設計しなければならないため、その容量としての
大きさには限度がある。このため、これらを考慮にいれ
て容量を設計する必要がある。例えば、補助容量を大き
く設計するためには、表示用電極（７）とゲート金属膜
（３）との重なり面積を大きくする必要があり、このこ
とは、開口率の低下という問題を引き起こした。又、他
の方法としては、補助容量の絶縁膜の膜厚を小さくし、
容量を大きくする方法がある。また、TFTの動作特性に
とっても、ゲート用絶縁膜（３）は薄い方がよいが、上
部のドレイン又はソースとのショートを回避するために
3000〜4000Å以上の厚みが必要とされている。However, the provision of the auxiliary capacitor has to be designed to increase the on-current of the TFT, so that its capacity is limited. Therefore, it is necessary to design the capacity in consideration of these. For example, in order to design the auxiliary capacitance to be large, it is necessary to increase the overlapping area between the display electrode (7) and the gate metal film (3), and this has caused a problem of a decrease in aperture ratio. Another method is to reduce the thickness of the insulating film of the storage capacitor,
There is a way to increase the capacity. The thinner the gate insulating film (3) is, the better the TFT operating characteristics are, but in order to avoid a short circuit with the upper drain or source.
A thickness of 3000 to 4000 mm or more is required.
従って、第４図の場合、同一の絶縁膜でゲート絶縁膜
（４）と補助容量用絶縁膜（10）を兼ねているので、補
助容量増大のために膜厚を薄くすると、絶縁膜（４）は
ゲート金属膜（３）とドレイン・ソース電極（８）との
ショートを多発させ、本来の目的である歩どまりの向上
がはたせず、かえってこれを低下させてしまうという欠
点があった。Therefore, in the case of FIG. 4, the same insulating film serves as both the gate insulating film (4) and the insulating film for auxiliary capacitance (10). ) Causes a short circuit between the gate metal film (3) and the drain / source electrode (8) frequently, and does not improve the yield, which is the original purpose, but rather lowers the yield.
（ニ） 課題を解決するための手段 本発明の液晶表示装置の製造方法は、絶縁性基板上に
ゲート金属膜、ゲート用絶縁膜、非結晶半導体、ドレイ
ン並びにソース用金属膜からなる薄膜トランジスタをマ
トリクス状に配置し、各トランジスタに表示電極を結合
すると共に、該表示電極に対し補助容量用絶縁膜を介し
て補助容量電極を対向配置した液晶表示装置の製造方法
に於て、前記ゲート用絶縁膜と前記補助容量用絶縁膜と
を同一絶縁膜で形成する工程を有し、後工程にて補助容
量用絶縁膜相当部の該絶縁膜を所定の膜厚にエッチング
するものである。(D) Means for Solving the Problems A method of manufacturing a liquid crystal display device according to the present invention is a method for manufacturing a liquid crystal display device comprising a matrix comprising a thin film transistor comprising a gate metal film, a gate insulating film, an amorphous semiconductor, a drain and a source metal film on an insulating substrate. In a method of manufacturing a liquid crystal display device, a display electrode is coupled to each transistor, and a storage capacitor electrode is arranged to face the display electrode via a storage capacitor insulating film. And forming the storage capacitor insulating film with the same insulating film, and etching the insulating film of a portion corresponding to the storage capacitor insulating film to a predetermined thickness in a later step.
（ホ） 作用 本発明の液晶表示装置の製造方法によれば、ゲート用
絶縁膜と補助容量用絶縁膜とを同一絶縁膜で形成し、そ
の後補助容量相当部の該絶縁膜を所定の膜厚にエッチン
グするものであるので、補助容量用電極部分の絶縁膜を
所望の膜厚に形成できる。これにより、後工程で形成す
る表示用透明電極と、先に形成した補助容量用電極との
間で容量値の大きい容量を簡単に得ることができる。(E) Function According to the method of manufacturing a liquid crystal display device of the present invention, the insulating film for the gate and the insulating film for the auxiliary capacitance are formed of the same insulating film, and then the insulating film of the part corresponding to the auxiliary capacitance has a predetermined thickness. Therefore, the insulating film at the storage capacitor electrode portion can be formed to a desired thickness. This makes it possible to easily obtain a capacitance having a large capacitance value between the display transparent electrode formed in a later step and the auxiliary capacitance electrode formed earlier.
（ヘ） 実施例 本発明の製造方法にて得られる液晶表示装置の一実施
例を第１図に示し、その製造工程順を第２図（ａ）〜
（ｇ）に示す。(F) Example One embodiment of the liquid crystal display device obtained by the manufacturing method of the present invention is shown in FIG. 1, and the order of the manufacturing steps is shown in FIGS.
(G).
これらの図に基ずき本発明の液晶表示装置の製造方法
を以下に詳述する。The method for manufacturing the liquid crystal display device of the present invention will be described below in detail with reference to these drawings.
まず、ガラス板からなる絶縁性基板（１）上にITOか
らなる補助容量用電極（２）をパターン形成する。次
に、ゲート金属膜（３）を形成しパターニングする［第
２図（ａ）］。First, an auxiliary capacity electrode (2) made of ITO is patterned on an insulating substrate (1) made of a glass plate. Next, a gate metal film (3) is formed and patterned [FIG. 2 (a)].
さらに、プラズマ反応法等によって、SiNXあるいはSi
OXからなる絶縁膜（４）、活性層としての例えばａ−Si
からなる非晶質半導体膜（５）、さらに、不純物をドー
プした例えばn+a−Si膜からなるオーミックコンタクト
用半導体膜（６）を連続して形成する［第２図
（ｂ）］。このとき、ゲート用絶縁膜の膜厚Ａは、ドレ
イン・ゲート、ソース・ゲート間のショートが発生しな
いように充分厚く設定する。例えば、Ａ＝4000Åとす
る。Furthermore, SiN X or Si
Consisting O X insulating film (4), as an active layer for example a-Si
An amorphous semiconductor film (5) made of, and a semiconductor film for ohmic contact (6) made of, for example, an n + a-Si film doped with impurities are formed continuously (FIG. 2 (b)). At this time, the thickness A of the gate insulating film is set to be sufficiently large so that a short circuit between the drain-gate and the source-gate does not occur. For example, A = 4000 °.
次に、オーミックコンタクト用半導体膜（６）と非晶
質半導体膜（５）とを同一のレジストでパターンにエッ
チングする［第２図（ｃ）］。そして、補助容量用電極
（２）と、後工程で形成される表示用透明電極（７）と
が重なる部分を開口パターン［第１図の破線で示す］と
して残したレジスト［第２図には図示せず］をコート
し、絶縁膜（４）用のエッチャントにより、補助容量用
絶縁膜として所望の膜厚Ｂにまで薄くなるようにエッチ
ング研摩する［第２図（ｄ）］。例えば、Ｂ＝2000Åと
する。Next, the semiconductor film for ohmic contact (6) and the amorphous semiconductor film (5) are etched into a pattern with the same resist [FIG. 2 (c)]. Then, a resist in which an overlapping portion of the auxiliary capacitance electrode (2) and the display transparent electrode (7) formed in a later step is left as an opening pattern [shown by a broken line in FIG. 1] [FIG. [Not shown], and the resultant is polished with an etchant for the insulating film (4) so as to be thinned to a desired film thickness B as an insulating film for an auxiliary capacitor [FIG. 2 (d)]. For example, B = 2000 °.
次に、ITOからなる表示用透明電極（７）を形成パタ
ーニングする［第２図（ｅ）］。さらにドレイン、及び
ソース用金属膜（８）を形成パターニングし、TFTのチ
ャネル部に残されたオーミックコンタクト用半導体膜
（６）をエッチング除去すると液晶表示装置用TFTアレ
イは完成する［第２図（ｇ）］。Next, a display transparent electrode (7) made of ITO is formed and patterned [FIG. 2 (e)]. Further, a drain and source metal film (8) is formed and patterned, and the ohmic contact semiconductor film (6) remaining in the channel portion of the TFT is removed by etching, whereby a TFT array for a liquid crystal display device is completed [FIG. g)].
斯くして得られたTFTアレイ基板を液晶物質を介して
共通電極基板に対向配置することにより液晶表示装置が
得られる。A liquid crystal display device can be obtained by disposing the TFT array substrate thus obtained to face a common electrode substrate via a liquid crystal substance.
本実施例では、半導体膜（５）のエッチング用レジス
トと、補助容量用の絶縁膜（４）の膜厚加工用レジスト
を異なるものとして説明したが、これらレジストは、全
く同じものを用いても、基本的には問題がない。この場
合、半導体膜（５）用レジストによって、オーミックコ
ンタクト用の不純物半導体膜（６）、半導体膜（５）の
連続エッチングに引き続き、補助容量用の絶縁膜（４）
のエッチングを行うことができ、製造工程の簡略化が図
れる。In the present embodiment, the resist for etching the semiconductor film (5) and the resist for processing the film thickness of the insulating film (4) for the auxiliary capacitance are described as being different from each other. There is basically no problem. In this case, the resist for the semiconductor film (5) is used to continuously etch the impurity semiconductor film (6) for the ohmic contact and the semiconductor film (5), and then the insulating film (4) for the auxiliary capacitance.
Can be performed, and the manufacturing process can be simplified.
（ト） 発明の効果 本発明の液晶表示装置の製造方法によれば、同一の絶
縁膜をTFTにおけるゲート用および補助容量用のそれぞ
れに最適な膜厚として利用することが可能となる。(G) Effects of the Invention According to the method of manufacturing a liquid crystal display device of the present invention, it is possible to use the same insulating film as an optimal film thickness for each of a gate and an auxiliary capacitor in a TFT.
従って、ゲート用絶縁膜として用いる部分においては
ゲート金属膜とその上部のドレイン、ソース金属膜との
ショートが発生しないように充分な膜厚を確保できる上
に、補助容量用絶縁膜として用いる部分では高容量値
化、薄膜化が図れ、補助容量用電極と表示用透明電極と
の重なり面積を大きくとる必要がなくなる。このこと
は、ゲート金属膜を同時に補助容量用電極としてもちい
る素子構造のものに於ては、ゲート用金属膜によって遮
光される部分が少なくなり、画素の開口率が、向上する
などの効果が望める。Therefore, in the portion used as the gate insulating film, a sufficient film thickness can be ensured so as not to cause a short circuit between the gate metal film and the drain and source metal films thereon, and in the portion used as the auxiliary capacitor insulating film. A higher capacitance value and a thinner film can be achieved, and it is not necessary to increase the overlapping area between the auxiliary capacitance electrode and the display transparent electrode. This means that in the element structure using the gate metal film as an auxiliary capacitance electrode at the same time, the portion shielded by the gate metal film is reduced and the aperture ratio of the pixel is improved. I can expect.
第１図は本発明に係る液晶表示装置の平面図、第２図
（ａ）〜（ｇ）は本発明の液晶表示装置の製造方法を示
す工程断面図、第３図及び第４図はそれぞれ異なる従来
装置の断面図である。 （１）……絶縁基板、（２）……補助容量電極、（３）
……ゲート用金属膜、（４）……絶縁膜、（５）……非
結晶半導体、（６）……不純物をドープした半導体、
（７）……表示用電極、（８）……ドレイン，ソース用
金属膜、（９）……隣接ゲート金属膜、（10）……補助
容量用絶縁膜。FIG. 1 is a plan view of a liquid crystal display device according to the present invention, FIGS. 2 (a) to 2 (g) are process cross-sectional views showing a method of manufacturing the liquid crystal display device of the present invention, and FIGS. It is sectional drawing of a different conventional apparatus. (1) ... insulating substrate, (2) ... auxiliary capacitance electrode, (3)
... Gate metal film, (4) insulating film, (5) amorphous semiconductor, (6) semiconductor doped with impurities,
(7) ... display electrode, (8) ... drain and source metal film, (9) ... adjacent gate metal film, (10) ... auxiliary capacitance insulating film.
Claims (1)
縁膜、半導体膜、ドレイン並びにソース用金属膜からな
る薄膜トランジスタをマトリクス状に配置し、各トラン
ジスタに表示電極を結合すると共に、該表示電極に対し
補助容量用絶縁膜を介して補助容量電極を対向配置した
液晶表示装置の製造方法に於て、 前記ゲート用絶縁膜と前記補助容量用絶縁膜とを同一絶
縁膜で形成する工程を有し、後工程にて補助容量用絶縁
膜相当部の該絶縁膜を所定の膜厚にエッチングすること
を特徴とした液晶表示装置の製造方法。1. A thin film transistor comprising a gate metal film, a gate insulating film, a semiconductor film, a drain and a source metal film is arranged in a matrix on an insulating substrate, and a display electrode is coupled to each transistor. In a method for manufacturing a liquid crystal display device in which an auxiliary capacitance electrode is arranged to face an electrode via an auxiliary capacitance insulating film, a step of forming the gate insulating film and the auxiliary capacitance insulating film with the same insulating film is included. A method for manufacturing a liquid crystal display device, comprising: etching a portion of the insulating film corresponding to an insulating film for an auxiliary capacitor to a predetermined thickness in a subsequent step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23410688A JP2584290B2 (en) | 1988-09-19 | 1988-09-19 | Manufacturing method of liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23410688A JP2584290B2 (en) | 1988-09-19 | 1988-09-19 | Manufacturing method of liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0281029A JPH0281029A (en) | 1990-03-22 |
| JP2584290B2 true JP2584290B2 (en) | 1997-02-26 |
Family
ID=16965724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23410688A Expired - Fee Related JP2584290B2 (en) | 1988-09-19 | 1988-09-19 | Manufacturing method of liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584290B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008225514A (en) * | 2005-09-13 | 2008-09-25 | Epson Imaging Devices Corp | Liquid crystal display device and method for manufacturing same |
| US7525605B2 (en) | 2006-05-29 | 2009-04-28 | Epson Imaging Devices Corporation | Liquid crystal display device and manufacturing method thereof |
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| US7602452B2 (en) | 2005-09-13 | 2009-10-13 | Epson Imaging Devices Corp. | Liquid crystal display device and method for manufacturing the same |
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| JP2002122881A (en) * | 2000-10-13 | 2002-04-26 | Nec Corp | Liquid crystal display device and its manufacturing method |
| JP2007121793A (en) * | 2005-10-31 | 2007-05-17 | Epson Imaging Devices Corp | Liquid crystal display device and manufacturing method thereof |
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Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58106860A (en) * | 1981-12-18 | 1983-06-25 | Seiko Epson Corp | Matrix substrate for thin-film transistor |
| JP2506067B2 (en) * | 1983-09-06 | 1996-06-12 | 株式会社東芝 | Transmissive liquid crystal display device |
-
1988
- 1988-09-19 JP JP23410688A patent/JP2584290B2/en not_active Expired - Fee Related
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| JP2008225514A (en) * | 2005-09-13 | 2008-09-25 | Epson Imaging Devices Corp | Liquid crystal display device and method for manufacturing same |
| CN100485470C (en) * | 2005-09-13 | 2009-05-06 | 爱普生映像元器件有限公司 | Liquid crystal display device and method for manufacturing the same |
| US7602452B2 (en) | 2005-09-13 | 2009-10-13 | Epson Imaging Devices Corp. | Liquid crystal display device and method for manufacturing the same |
| US7619695B2 (en) | 2006-05-10 | 2009-11-17 | Epson Imaging Devices Corporation | Liquid crystal display and manufacturing method therefor |
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| US7525605B2 (en) | 2006-05-29 | 2009-04-28 | Epson Imaging Devices Corporation | Liquid crystal display device and manufacturing method thereof |
| US7573538B2 (en) | 2006-12-04 | 2009-08-11 | Epson Imaging Devices Corporation | Liquid crystal display device and method for manufacturing the same |
| JP2009157133A (en) * | 2007-12-27 | 2009-07-16 | Kyocera Corp | Substrate for display device, display device, and manufacturing method of substrate for display device |
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| JPH0281029A (en) | 1990-03-22 |
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