JPH027870Y2 - - Google Patents
Info
- Publication number
- JPH027870Y2 JPH027870Y2 JP7957784U JP7957784U JPH027870Y2 JP H027870 Y2 JPH027870 Y2 JP H027870Y2 JP 7957784 U JP7957784 U JP 7957784U JP 7957784 U JP7957784 U JP 7957784U JP H027870 Y2 JPH027870 Y2 JP H027870Y2
- Authority
- JP
- Japan
- Prior art keywords
- target
- erosion
- area
- region
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003628 erosive effect Effects 0.000 claims description 26
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 3
- 239000013077 target material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005488 sandblasting Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7957784U JPS60193964U (ja) | 1984-05-31 | 1984-05-31 | マグネトロンスパツタ装置のタ−ゲツト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7957784U JPS60193964U (ja) | 1984-05-31 | 1984-05-31 | マグネトロンスパツタ装置のタ−ゲツト |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60193964U JPS60193964U (ja) | 1985-12-24 |
| JPH027870Y2 true JPH027870Y2 (en:Method) | 1990-02-26 |
Family
ID=30624624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7957784U Granted JPS60193964U (ja) | 1984-05-31 | 1984-05-31 | マグネトロンスパツタ装置のタ−ゲツト |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60193964U (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6716863B2 (ja) * | 2015-05-29 | 2020-07-01 | 住友金属鉱山株式会社 | スパッタリングターゲット及びこれを用いたスパッタリング成膜方法 |
-
1984
- 1984-05-31 JP JP7957784U patent/JPS60193964U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60193964U (ja) | 1985-12-24 |
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